1N5817 1N5819 - Datasheet Archive

 

SOT-23-3L Plastic-Encapsulate Transistors 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE 1. ANODE FEATURES 3.CATHODE 2. 80¡

 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Transistors 1N5817 1N5817, 1N5819 1N5819 SOT-23-3L SCHOTTKY DIODE 1. ANODE FEATURES 3.CATHODE 2. 80¡ À 05 0. 0. 35 1. 9 Collector current A IF : 1 Collector-base voltage V VR : 1N5817 1N5817: 20 1N5819 1N5819: 40 V Operating and storage junction temperature range 1. 60¡ À0. 05 2. 92¡ À0. 05 mW(Tamb=25) 0. 0. 95¡ À 025 PD : 300 1. 02 Power dissipation TJ,Tstg: -55 to +150 - 1N5817 1N5817 1N5819 1N5819 Marking:SJ Marking:SL + ELECTRICAL CHARACTERISTICS(Tamb=25 Parameter Reverse breakdown voltage Reverse voltage Forward Diode Symbol capacitance Test V(BR) 1N5817 1N5817 VR=20V IR VF VR=40V IF=1A* IF=1A* IF=3A* IF=3A* 1N5817 1N5817 1N5819 1N5819 1N5817 1N5817 1N5819 1N5819 CD conditions IR= 1mA 1N5819 1N5819 leakage current voltage unless otherwise specified) VR=0V f=1MHz MIN MAX 20 UNIT V 40 1 mA 0.45 0.6 0.75 0.9 V 120 pF