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1N5819 Datasheet

Part Manufacturer Description PDF Type
1N5819 Bytesonic Electronics DIODE RECTIFIER BRIDGE SINGLE 40V 1A 2DO-41 Original
1N5819 Comchip Technology 1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Original
1N5819 Compensated Devices 1 AMP SCHOTTKY BARRIER RECTIFIERS Original
1N5819 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts Original
1N5819 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original
1N5819 Diodes 1.0A SCHOTTKY BARRIER RECTIFIER Original
1N5819 Diodes DIODE, 40V, 1A, 1N5819 Original
1N5819 Diodes Short Form Selection Guide Original
1N5819 Diotec Diode, 1A, 40V, Schottky Barrier Rectifier Original
1N5819 Diotec Si-Schottky-Rectifiers Original
1N5819 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original
1N5819 Fagor 40 V, 1A schottky barrier rectifier Original
1N5819 Fairchild Semiconductor Schottky Rectifiers Original
1N5819 Fairchild Semiconductor Schottky Barrier Rectifier Original
1N5819 Fairchild Semiconductor 1.0 Ampere Schottky Barrier Rectifiers Original
1N5819 FCI Diode, 1A, 40V, Schottky Barrier Diode Original
1N5819 Formosa 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original
1N5819 Fronter Electronics DIODE SCHOTTKY DIODE 40V 1A 2DO-41 Original
1N5819 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original
1N5819 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original
Showing first 20 results.

1N5819

Catalog Datasheet MFG & Type PDF Document Tags

1N5817

Abstract: 1N5819 the average forward current; a = 'firms/1 f(av)- mca056 Fig.6 1N5819. Maximum values steady state , N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 â  APX 1N5817/1N5818/1N5819 Schottky , PARAMETER TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrwm crest working reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V Vr continuous reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 24 V
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OCR Scan
1N5817/1N5818/1N5819 N5819 1n5819 philips 1.1N5819 N5818 PHILIPS 1N 100K/W

0-12v variable power supply

Abstract: LM358 pinout GND 1 C1 150µF 35V 5.0V/1A 68µH 4 D1 1N5819 3 C2 330µF 16V Fixed , 4 D1 1N5819 C1 150µF 35V UPL1V151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 , 4 D1 1N5819 C2 330µF 16V UPL1J151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 , Motorola 1N5819 L1 Coiltronics PL52A-10-500 DCR = 0.045 D1 1N5819 C2 680µF 16V -5V/0.2A , 1N5819 UPL1V151MPH, ESR = 0.12 UPL1C681MPH, ESR = 0.065 1N5819 PL52A-15-500, DCR = 0.054 Figure
Micrel Semiconductor
Original
MIC4575 LM2575 0-12v variable power supply LM358 pinout 1A current to 0-5v voltage converter using LM358 motorola 1N4148 1N5244 MIC4575WU M9999-062105

1n5819

Abstract: VS-1N5819TR 5000 5000 Tape and reel VS-1N5819-M3 1000 1000 Bulk VS-1N5819TR , VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS-1N5819. axial leaded Schottky rectifier has been optimized for very low forward voltage , VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VS-1N5819 VSS-1N5819 , www.vishay.com/doc?91000 VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors ELECTRICAL
Vishay Semiconductors
Original
VS-1N5819 VS-1N5819-M3 DO-204AL 2002/95/EC DO-41 VSS-1N5819-M3

1N5819

Abstract: 1N5817 1N5819. Maximum values steady state forward power dissipation as a function of the average forward , 0 10 20 30 V (V) 40 R 0 Fig.10 1N5819. Maximum permissible junction temperature as , Fig.11 1N5819. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES
Philips Semiconductors
Original
datasheets diode 1n5818 1N5817 Philips 1N817 MAM218 MBC051

datasheets diode 1n5818

Abstract: 1N5818 Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF(AV , reliability waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for , www.irf.com 1 1N5818, 1N5819 Bulletin PD-20590 rev. A 05/02 Voltage Ratings Part number VR 1N5818 1N5819 30 40 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V
International Rectifier
Original
1N581X

1N5819

Abstract: 1N5817-1N5819 1N5818 DO-41 1000 Units/Box 1N5819-T3 DO-41 5000/Tape & Reel 1N5819-TB DO-41 5000 , 1N5817 ­ 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! , Storage Temperature Range 1N5819 VR(RMS) RMS Reverse Voltage 1N5818 VRRM VRWM VR Peak , . 1N5817 ­ 1N5819 1 of 4 © 2006 Won-Top Electronics 1.0 IF, NSTANTANEOUS FORWARD CURRENT (A , 1N5819 1.0 Tj = 25ºC Pulse Width = 300 µs 2% Duty Cycle 0.1 0 TL, LEAD TEMPERATURE (ºC
Won-Top Electronics
Original
1N5818-T3 1N5818-TB 1N5817-1N5819 Diode case DO41 DIODE 1n5819 1N5817-T3 1N5817-TB MIL-STD-202 5000/T 1N5817-TB-LF

1N5819

Abstract: datasheets diode 1n5818 1N5817-HE thru 1N5819-HE Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current , 1N5817-HE thru 1N5819-HE 2. Characteristic Curves ( TA = 25°C unless otherwise noted ) Fig. 2 ­ Maximum , t,Pulse duration,sec 100 0.1 1 10 Reverse Voltage (V) 100 1N5817-HE thru 1N5819-HE 3. dimension: 1N5817-HE thru 1N5819-HE 4.Taping Specification 42/tape W 42 -1.0 , 1N5819-HE 4. Update Record 1 2010.09.23 Leshan Radio Company
Leshan Radio Company
Original
15KV IEC61000-4-2 MIL-STD-750

diagram Converter 24v to 12v

Abstract: voltage to current converter using LM358 -5.0BT FB VIN GND 1 C1 150µF 35V 5.0V/1A 68µH 4 D1 1N5819 3 C2 330µF 16V , Application Note 14. L1 3.3V/1A 2 5 68µH 8V to 24V C2 330µF 16V 4 D1 1N5819 C1 150µF 35V UPL1V151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 RCH106-680K, DCR = 0.22 HM77 , Nichicon Nichicon Motorola Sumida Bi 2 5.0V/1A 68µH 4 D1 1N5819 C2 330µF 16V UPL1J151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 RCH106-680K, DCR = 0.22 HM77-11003, DCR = 0.233
Micrel Semiconductor
Original
diagram Converter 24v to 12v voltage to current converter using LM358 charger on LM358 charge battery lm339 lm358 frequency duty cycle battery charger on LM358 MIC4575BT LM358 LM3420 LM339 SP-1/2-A1-0R100J VN2222LL
Abstract: )* If (av) (a) Fig.6 1N5819. Maximum values steady state forward power dissipation as a function of , 1N5818 1N5819 1N5817 1N5818 1N5819 n o n - r e p e titiv e p e a k re v e rs e v o lta g e 20 30 40 1N5817 1N5818 1N5819 c o n tin u o u s r e v e rs e v o lta g e MAX. 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 c r e s t w o r k in g re v e rs e v o lta g e Vr TYPE 1N5817 1N5818 1N5819 r e p e titiv e p e a k re v e rs e v o lta g e 25 -
OCR Scan
81N5817
Abstract: 1N5818 DO-41 1000 Units/Box 1N5819-T3 DO-41 5000/Tape & Reel 1N5819-TB DO-41 5000 , 1N5817 â'" 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features #21; , Thermal Resistance Junction to Lead (Note 1) Operating and Storage Temperature Range 1N5819 VR(RMS , . 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1N5817 â'" 1N5819 1 of 4 Â , 0 10 40 60 80 100 120 140150 1N5817 10 1N5818 1N5819 1.0 Tj = Won-Top Electronics
Original

1N817

Abstract: 1N5817 power dissipation as a function of the average forward current; a = If(rms/If(av). MBE643 Fig.5 1N5819. , .10 1N5819. Maximum permissible junction temperature as a function of reverse voltage; R,hj-a = 100 K/W , 30 Vr (v) 40 Fig.11 1N5819. Reverse power dissipation as a function of reverse voltage (max. values , Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 , â'¢ Polarity protection. DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes
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OCR Scan
1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc

VS-1N5819TR-M3

Abstract: 1n5819 vishay make INFORMATION (Example) PREFERRED P/N VS-1N5819 VS-1N5819TR VS-1N5819-M3 VS-1N5819TR-M3 QUANTITY PER T/R 1000 , VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5819. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5819 40 VSS-1N5819-M3 40 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5819, VS-1N5819
Vishay Semiconductors
Original
VS-1N5819TR-M3 1n5819 vishay make 2011/65/EU

lm358 frequency duty cycle

Abstract: SS26 R4 5.0V/1A 68µH 4 8V to 24V C1 150µF 35V 1 MIC4575-5.0BT FB VIN GND 3 D1 1N5819 C2 , -3.3BT FB VIN GND 3 D1 1N5819 C2 330µF 16V 1 MIC4575-5.0BT FB VIN GND 3 D1 1N5819 C2 , UPL1C331MPH, ESR = 0.12 1N5819 RCH106-680K, DCR = 0.22 HM77-11003, DCR = 0.233, Note 2 C1 C2 D1 L1 L2 Nichicon Nichicon Motorola Sumida Bi UPL1J151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 RCH106 , 0.065 D1 Motorola 1N5819 L1 Coiltronics PL52A-10-500 DCR = 0.045 D1 1N5819 C2 680µF 16V -5V/0.2A
Micrel Semiconductor
Original
SS26 R4 lm358 24v

1N5810 diode

Abstract: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Voltage 20 V to 40 V Current 1.0 A DO , 1.0 A 30 A 55 pF -65 to +125 °C -65 to +150 °C 1N5819 40 28 40 VRRM VRMS VDC IF(AV) IFSM Cj Tj Tstg , Version: Oct-11 Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ordering information PREFERRED P/N 1N5819 AMP 1N5819 TR 1N5819 HF AMP 1N5819 HF TR PACKAGE CODE AMP TR AMP TR DELIVERY , .6±0.1 Version: Oct-11 Page Number: 2/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ratings and
Fagor
Original
1N5810 diode 2002/96/EC J-STD-002 JESD22-B102

1N5810 diode

Abstract: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO , applications. Maximum Ratings and Electrical Characteristics at 25 ºC 1N5817 1N5818 1N5819 VRRM , www.fagorelectronica.com Document Name: 1n5810 Version: Feb-13 (1) Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ordering information PREFERRED P/N PACKAGE CODE 1N5819 TR TR 1N5819 HF AMP AMP 1N5819 HF TR TR UNIT WEIGHT (g) AMMO BOX 3,000 0.325 5,000
Fagor
Original
AEC-Q101
Abstract: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List , THRU 1N5819 1.0A Leaded Type Schottky Barrier Rectifiers - 20V-40V Package outline Features , 1N5819 40 28 40 Operating temperature T J, ( OC) 0.45 1N5818 0.5 10 CJ 0.60 , and characteristic curves (1N5817 THRU 1N5819) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 1N5817 3.0 1N5818 1N5819 1.0 Formosa MS
Original
DS-222644 MIL-STD-750D METHOD-2036 METHOD-1026 METHOD-1027 METHOD-1036

VS-1N5819TR-M3

Abstract: VS-1N5819-M3 INFORMATION (Example) PREFERRED P/N VS-1N5819 VS-1N5819TR VS-1N5819-M3 VS-1N5819TR-M3 QUANTITY PER T/R 1000 , VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5819. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5819 40 VSS-1N5819-M3 40 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5819, VS-1N5819
Vishay Semiconductors
Original
Abstract: VS-1N5819TR 5000 5000 Tape and reel VS-1N5819-M3 1000 1000 Bulk VS-1N5819TR , VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS-1N5819. axial leaded Schottky rectifier has been optimized for very low forward voltage , VS-1N5819 VSS-1N5819-M3 UNITS 40 40 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER , www.vishay.com/doc?91000 VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors ELECTRICAL Vishay Semiconductors
Original
Abstract: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features I Very small conduction , 5 1/7 www.st.com 7 Characteristics 1 1N5817, 1N5818, 1N5819 Characteristics , (RMS) 1N5819 20 Repetitive peak reverse voltage 1N5818 30 40 Forward rms current , Tests conditions Tj = 25 °C Tj = 100 °C VR = VRRM 1N5817 1N5818 1N5819 Unit 0.5 , / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 2/7 Doc ID 6262 Rev 5 1N5817, 1N5818 STMicroelectronics
Original

1n5819 equivalent

Abstract: 1n5819 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead , because of its lower forward voltage, and higher for the 1N5819. Figure 2. Maximum Reference , 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817, 1N5818, 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse
ON Semiconductor
Original
1n5819 equivalent 1N581 1N5817RL

24v 12v 20A regulator

Abstract: 24v 12v 10A regulator Nichicon Nichicon Motorola Sumida 7 3.3V/0.5A 3 100µH D1 1N5819 4 16V to 24V C2 220µF 16V 1 5 C1 33µF 63V UPL1V470MEH, ESR = 0.34 UPL1C221MPH, ESR = 0.16 1N5819 , L1 5 100µH 1 D1 1N5819 C2 220µF 16V 6V to 24V 1 C1 150µF 35V UPL1J470MEH, ESR = 0.34 UPL1C221MPH, ESR = 0.16 1N5819 RCH875-101K, DCR = 0.28 SHDN SW MIC4575 , Bi 2 3.3V/1A 68µH 4 D1 1N5819 C2 330µF 16V UPL1V151MPH, ESR = 0.12 UPL1C331MPH
Micrel Semiconductor
Original
24v 12v 20A regulator 24v 12v 10A regulator ME 9435 24v to 5V 3A converter 1N5822 SS34 lm358 sum

charger on LM358

Abstract: MIC4575-3 -5.0BT FB VIN GND 1 C1 150µF 35V 5.0V/1A 68µH 4 D1 1N5819 3 C2 330µF 16V , 8V to 24V C2 330µF 16V 4 D1 1N5819 C1 150µF 35V UPL1V151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 RCH106-680K, DCR = 0.22 HM77-11003, DCR = 0.233, Note 2 5 1 C1 , Bi 2 5.0V/1A 68µH 4 D1 1N5819 C2 330µF 16V UPL1J151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 RCH106-680K, DCR = 0.22 HM77-11003, DCR = 0.233, Note 2 Figure 2. 8V­24V to 5V
Micrel Semiconductor
Original
MIC4575-3 330uF 16V uux1h470mt1gs MBRS130LT3 COMPARATOR LM358 SANYO 1000uF 16V CA

1N5817

Abstract: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This , Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse , ) 85 1N5817 20 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 80 25 (for one cycle) -65 to +125 150 , 0.875 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 Unit V Maximum Instantaneous Reverse Current @ Rated dc , 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial
ON Semiconductor
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ME 9435

Abstract: lm358 sum Nichicon Nichicon Motorola Sumida 7 3.3V/0.5A 3 100µH D1 1N5819 4 16V to 24V C2 220µF 16V 1 5 C1 33µF 63V UPL1V470MEH, ESR = 0.34 UPL1C221MPH, ESR = 0.16 1N5819 , L1 5 100µH 1 D1 1N5819 C2 220µF 16V 6V to 24V 1 C1 150µF 35V UPL1J470MEH, ESR = 0.34 UPL1C221MPH, ESR = 0.16 1N5819 RCH875-101K, DCR = 0.28 SHDN SW MIC4575 , Bi 2 3.3V/1A 68µH 4 D1 1N5819 C2 330µF 16V UPL1V151MPH, ESR = 0.12 UPL1C331MPH
Micrel Semiconductor
Original
apple schematic LM358 definition PL52C-33-1000 68500 330uf nichicon capacitor 680uF 35V capacitor

1N5810 diode

Abstract: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Voltage 20 V to 40 V Current 1.0 A DO , 1.0 A 30 A 55 pF -65 to +125 °C -65 to +150 °C 1N5819 40 28 40 VRRM VRMS VDC IF(AV) IFSM Cj Tj Tstg , Version: Oct-11 Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ordering information PREFERRED P/N 1N5819 AMP 1N5819 TR 1N5819 HF AMP 1N5819 HF TR PACKAGE CODE AMP TR AMP TR DELIVERY , .6±0.1 Version: Oct-11 Page Number: 2/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ratings and
Fagor
Original

1N5819a

Abstract: 1N5819 1N5817 and 1N5819are Motorola Preferred Devices Case: Epoxy, Molded Weight: 0.4 gram , to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 , 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 48 28 V V A ta 85 80 25 (for one , 1N5817 0.32 0.45 0.75 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 °c/w Unit V ELECTRICAL CHARACTERISTICS (TL , ) Motorola, Inc. 1996 1N5817 1N5818 1N5819 NOTE 1 - DETERMINING MAXIMUM RATINGS Reverse power
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OCR Scan
1N5819a
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