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1N5818 BKC International 30 V, 1 A schottky power rectifier diode
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50.51 Kb

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1N5818 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS
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150.44 Kb

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1N5818 Capar Corp. Schottky Barrier Rectifiers
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1 pages,
82.08 Kb

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1N5818 CEIEC Shenzhen Rectifier Diode, Schottky Diode, Single, 30V, DO-41, 2-Pin
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2 pages,
37.22 Kb

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1N5818 Codi Semiconductor, Inc. 1A Schottky Barrier Rectifier
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2 pages,
100.58 Kb

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1N5818 Comchip Technology Corp. 1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 30 V.
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2 pages,
28.18 Kb

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1N5818 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts
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2 pages,
288.85 Kb

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1N5818 DC Components Co., Ltd. TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER
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2 pages,
384.84 Kb

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1N5818 Diodes, Inc. Short Form Selection Guide
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129 pages,
3107.54 Kb

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1N5818 Diodes, Inc. 1.0A SCHOTTKY BARRIER RECTIFIER
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2 pages,
42.05 Kb

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Catalog Search Results

Catalog Datasheet Results Type PDF Document Tags
Abstract: B K C INTERNATIONAL 3DE D 1N5818,1N5819 1N5819, LL5818 LL5818, LL5819 LL5819 117=^03 GOODBtb S â-  BKC International , 1N5818 1N5B19 1N5B19 LL5818 LL5818 LL5S19 LL5S19 Vrwm Vrwu 30 40 V V Peak Repetitive Reverse Voltage1' 1N5818 : 1N5819 1N5819 LLSB18 LLSB18 , Non-Repetitive Peak Reverse Voltage" 1N5818 1N5B19 1N5B19 LL5B18 LL5B18 LLS819 LLS819 Vos« VflSM 36 48 V V RMS Reverse Voltage 1N5818 , VR = (dc),PF(AV)'0 1N5S18 1N5S18 1N5818 1N5819 1N5819 1N5B19 1N5B19 T«ri> Tamo 80 75 •c •c Non-Repetitive Peak Surge , 1N5818 LL581B LL581B Vf - - 0.875 V 1N5819 1N5819 LLS819 LLS819 Vf - - - 0.9 V Instantaneous Reverse Current21 at ... OCR Scan
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1 pages,
50.51 Kb

1N5818 1N5819 Diode 1n581 DIODE 1N5819 dc LL5818 LL5819 LL5B19 LLS819 1N5B18 1n5819 melf lN5819 1N5B19 1N5818 abstract
datasheet frame
Abstract: 1N5817/1N5818/1N5819 " N ANER PHILIPS/DISCRETE blE D uca054 Fig.5 1N5818. Maximum values steady state , N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 â-  APX 1N5817/1N5818/1N5819 Schottky barrier , TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 1N5817 20 V 1N5818 30 V 1N5819 1N5819 40 V vrwm crest working reverse voltage 1N5817 1N5817 20 V 1N5818 30 V 1N5819 1N5819 40 V Vr continuous reverse voltage 1N5817 1N5817 20 V 1N5818 30 V 1N5819 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 1N5817 24 V 1N5818 ... OCR Scan
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9 pages,
197.22 Kb

N5818 1N5817 1.1N5819 1N5819 1N5818 N5819 1N5817/1N5818/1N5819 1N5817/1N5818/1N5819 abstract
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Abstract: Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 M3D119 1N5817 1N5817; 1N5818; 1N5819 1N5819 Schottky , 1N5817 1N5817; 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 1N5817 to 1N5819 1N5819 types ... Original
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9 pages,
58.96 Kb

MBG432 1N5817 1N817 1N5819 1N5818 datasheets diode 1n5818 M3D119 M3D119 abstract
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Abstract: Fig.4 0.5 1.5 1 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation as a , DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 M3D119 1N5817 1N5817; 1N5818; 1N5819 1N5819 , diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 1N5817 to ... Original
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9 pages,
69.36 Kb

datasheets diode 1n5818 1N5818 1N5819* diode 1N5819 1n5819 data sheet 1N5817 1N5817 schottky diode symbol 1N5819 package datasheets diode 1n5819 diode 1N5819 1N817 M3D119 M3D119 abstract
datasheet frame
Abstract: Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power , 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 M3D119 1N5817 1N5817; 1N5818; 1N5819 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 FEATURES ... Original
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9 pages,
40.5 Kb

1N817 1N5819 1N5818 1N5817 datasheets diode 1n5818 M3D119 M3D119 abstract
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Abstract: Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 MB£641 Fig.4 1N5818. Maximum , VR VRV , VR(V) 30 Fig.9 1N5818. Reverse power dissipation as a function of reverse voltage (max. values , Philips Semiconductors Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 , Semiconductors Product specification Schottky barrier diodes 1N5817 1N5817; 1N5818; 1N5819 1N5819 LIMITING VALUES In ... OCR Scan
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8 pages,
207.26 Kb

DIODE 1N5819 dc data sheet for 1N5817 1N5819 package 1N5818 1N5819 1N5817 1n5819 data sheet 1N817 1N5817 abstract
datasheet frame
Abstract: SIYU R 1N5817/1N5818/1N5819 PLASTIC SCHOTTKY BARRIER RECTIFIER Features DO-41 DO-41 ·High Current Capability ·Low Forward Voltage Drop 1.0(25.4) MIN · High temperature soldering , Unitinchmm TA = 25 Maximum Ratings & Electrical Characteristics 1N5818 1N5819 1N5819 VRRM 20 , Cj 110 pF Tj, TSTG - 55 - +150 DACHANG ELECTRONICS SIYU R 1N5817/1N5818 , Forward Current (A) IF(A) 10 1N5819 1N5819 1N5817 1N5817 1N5818 1 0.2 Tj = 25 °C 0.1 0.01 ... Original
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2 pages,
0 Kb

1N5817/1N5818/1N5819 1N5817/1N5818/1N5819 abstract
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Abstract: varies with load current as shown. D1 D2 D3 FERRITE 1N5818 1N5818 1N5818 BEAD K f W f K Figure I. The ... OCR Scan
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1 pages,
46.67 Kb

VOLTAGE TRIPLER mosfetdriver 1N5818 datasheet abstract
datasheet frame
Abstract: CS51411 CS51411 D2 C4 1N5818 10uF Gnd www.onsemi.com 3 Q4 2003 C2 0.1uF C3 33uF R1 , Shdnb Sync 5 D4 D5 1N4001 1N4001 2 CS51411 CS51411 C2 470uF 100nF D6 C4 1N5818 Q4 , 470uF 100nF D7 1.0kOhm_5% C4 33uF 1N5818 D6 C5 1uF www.onsemi.com 5 ... Original
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5 pages,
73.57 Kb

1n4001 datasheet 1N4148 1N4148 U3 1N5817 1N5818 1SMB5917BT3 4 FB 6 OUT CS51411 CS51414 MMSD914T1 equivalent for 1N4001 diode MBR120ESFT1 NCS2001 diode 1N4001 datasheet abstract
datasheet frame
Abstract: 1 Amp Schottky Rectifier 1N5817 1N5817,1N5818,1N5819 1N5819 £ Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A .081 .107 2.057 2.718 Dia. B 1.10 - 27.94 - C .160 .205 4.064 5.207 D , Catalog Number Voltage Voltage 1N5817 1N5817 20V 20V 1N5818 30V 30V 1N5819 1N5819 40V 40V • Schottky Barrier , junction capacitance 1N5817 1N5817 1N5818 1N5819 1N5819 I F(AV) 1A 1A 1A 135°C 130°C 130°C I FSM 50A 50A 50A vfm , 5-23-00 Rev. 3 1N5818 & 1N5819 1N5819 Figure 1 Typical Forward Characteristics 100r 80 : .1 .3 .5 .7 .9 1.1 ... OCR Scan
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3 pages,
116.28 Kb

D041 1N5819 1N5818 1N5817 MICROSEMI 1n5819 1N5817 abstract
datasheet frame
Abstract: PROCESS CPD76V CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Ã... Back Side Metalization Au - 12,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 10,915 PRINCIPAL DEVICE TYPES CMLSH1-40 CMLSH1-40 1N5817 1N5817 1N5818 1N5819 1N5819 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 ... Original
datasheet

1 pages,
32.96 Kb

Schottky diode wafer 1N5817 1N5818 1N5819 1n5819 equivalent CMLSH1-40 CPD76V data sheet for 1N5817 schottky diode diode equivalent 1n5819 data sheet 1N5817 diode datasheets diode 1n5818 datasheets diode 1n5819 CPD76V abstract
datasheet frame
Abstract: QUICK GUIDE (Schottky Rectifier) SCHOTTKY RECTIFIERS (AXIAL DEVICES) IF IFSM 20V 30V 40V SB0 0.6A 20A SB020 SB020 SB030 SB030 SB040 SB040 SB1 1A 40A SB120 SB120 SB130 SB130 SB140 SB140 1N5810 1N5810 1A 25A 1N5817 1N5817 1N5818* 1N5819 1N5819* SB3 3A 80A SB320 SB320 SB330 SB330 SB340 SB340 1N5820 1N5820 3A 80A 1N5820 1N5820 1N5821 1N5821* 1N5822 1N5822* SB5 5A 150A SB520 SB520 SB530 SB530 SB540 SB540 SERIES SB150 SB150* VF @ IF 60V SB160 SB160* SB360 SB360* SB560 SB560* 0.70V* 0.55V 0.500V* DO41 0.60V ... Original
datasheet

1 pages,
74.63 Kb

1N5820 SB030 SB130 SB320 SB330 SB360 diode SB520 1N5818 1N5817 SB560 20A Rectifier 1N5822 datasheets diode 1n5818 SB020 SB550 transistor datasheet abstract
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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
* ; 30.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5818 D ( IS=263u RS=73.1m BV=30.0 IBV=1.00m + CJO=203p M=0.333 N=1.90 TT=4.32u )
www.datasheetarchive.com/files/diodes-inc/spice-model/4228.mod
Diodes, Inc. 04/09/2012 0.19 Kb MOD 4228.mod
element component template d1n5818 p n #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * #* # Model generated on Aug 21, 00 # MODEL FORMAT: Saber electrical p,n { # BODY_BEGIN spd.model ddd1n5818=( is=4.4214e-05,rs=0.0531374,n=1.37435,eg=0.6, xti=0.5,bv=30,ibv=0.001,cjo=1.98376e-10, vj=1.5,m=0.54046,fc=0.5,tt=2.6273e-08, kf=0,af=1) spd.d p n =model=ddd1n5818 }
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On Semiconductor 20/06/2002 0.74 Kb SIN 1n5818.sin
1N5817 1N5817 1N5817 1N5817_1 Product information page 1N5817 1N5817 1N5817 1N5817; 1N5818; 1N5819 1N5819 1N5819 1N5819 25 SOD81 450@IF=1A 20 20 1N5818 50@VR=4V typ Medium power Schottky diodes 1 Publication releasedate Datsheet status Page count File size 1N5817 1N5817 1N5817 1N5817; 1N5818; 1N 9340 011 90133 Standard Marking * Ammopack, Axial, 52mm SOD81 RFS 1N5818 1N5818 T/R 9340 012 00113 Standard Marking * Reel Pack, Axial, Standard SOD81
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Philips 23/04/2003 5.05 Kb HTML 1n5817_1.html
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * * * Model generated on Aug 21, 00 * MODEL FORMAT: PSpice .MODEL D1n5818 d +IS=4.4214e-05 RS=0.0531374 N=1
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On Semiconductor 20/06/2002 0.64 Kb LIB 1n5818.lib
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * * * Model generated on Aug 21, 00 * MODEL FORMAT: SPICE3 .MODEL 1n5818 d +IS=4.4214e-05 RS=0.0531374 N=1
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On Semiconductor 20/06/2002 0.64 Kb SP3 1n5818.sp3
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * * * Model generated on Aug 21, 00 * MODEL FORMAT: SPICE2 .MODEL D1n5818 d +IS=4.4214e-05 RS=0.0531374 N=1
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On Semiconductor 20/06/2002 0.64 Kb SP2 1n5818.sp2
_1 1N5817 1N5817 1N5817 1N5817; 1N5818; 1N5819 1N5819 1N5819 1N5819 Schottky barrier diodes . 450 4 450 80.0@typ. 25 25 80.0@typ. 1N5818 50.0@typ. 1000 90133 Standard Marking * Ammopack, Axial, 52mm SOD81 RFS 1N5818 1N5818 9340 012 00133 Standard Marking * Ammopack, Axial, 52mm SOD81 RFS 1N5818 1N5818 T/R 9340 012 00113 Standard Marking * Reel Pack, Axial, Standard SOD81
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Philips 14/02/2002 17.58 Kb HTML 1n5817_1-v1.html
LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 Document Format LOW FORWARD VOLTAGE DROP FEATURES AND BENEFITS Symbol Parameter Value Unit 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 a diode on its own heatsink 1/5 Symbol Parameter Tests Conditions 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 Unit I R equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 1N5817 1N5817 1N5817 / 1N5818 P = 0.3 x I F(AV) + 0 .05 d = 0.1 Fig. 1: Average forward power dissipation versus average forward current (1N5817/1N5818
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STMicroelectronics 20/10/2000 9.1 Kb HTM 6262.htm
ST | LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 LOW DROP POWER SCHOTTKY SWITCHING LOW FORWARD VOLTAGE DROP FEATURES AND BENEFITS Symbol Parameter Value Unit 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 V Tests Conditions 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 Unit I R * Reverse leakage current Tj = 25 5 C V R = V RRM 1 1 1 m 5817 / 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS ) for 1N5819 1N5819 1N5819 1N5819 STATIC ELECTRICAL CHARACTERISTICS current versus ambient temperature ( d =0.5) (1N5817/1N5818). 1E-3 1E-2 1E-1 1E+0 0 1 2 3 4 5 6 7 8 9 10
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6262-v1.htm
STMicroelectronics 02/04/1999 6.89 Kb HTM 6262-v1.htm
ST | LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 LOW DROP POWER SCHOTTKY SWITCHING LOW FORWARD VOLTAGE DROP FEATURES AND BENEFITS Symbol Parameter Value Unit 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 V Tests Conditions 1N5817 1N5817 1N5817 1N5817 1N5818 1N5819 1N5819 1N5819 1N5819 Unit I R * Reverse leakage current Tj = 25 5 C V R = V RRM 1 1 1 m 5817 / 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS ) for 1N5819 1N5819 1N5819 1N5819 STATIC ELECTRICAL CHARACTERISTICS current versus ambient temperature ( d =0.5) (1N5817/1N5818). 1E-3 1E-2 1E-1 1E+0 0 1 2 3 4 5 6 7 8 9 10
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STMicroelectronics 14/06/1999 6.85 Kb HTM 6262-v2.htm

Shortform Datasheet Search Results

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1N5818T/R Philips Semiconductors / NXP Semiconductors General Purpose Schottky Rectifier

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Central Cross Reference Results

Central Part Industry Part Type Description
1N5818 Buy SB130 Buy Exact mechanical, slight electrical difference. Leaded Rectifier Schottky
1N5818 Buy SR103 Buy Exact mechanical, slight electrical difference. Leaded Rectifier Schottky

Diodes, Inc. Cross Reference Results

Diodes, Inc. Part Type Industry Part
1N5818 Buy Diodes, Inc. Closest 1N18 Buy
1N5818 Buy Diodes, Inc. Equivalent 1N5818G Buy
B130 Buy Diodes, Inc. Closest 1N5818M Buy
DFLS130 Buy Diodes, Inc. Closest 1N5818M Buy

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
1N5817 1N5817 Buy 1N5818 Buy Allied Electronic & Semiconductor Tech. Close Schottky (Diodes and Rectifiers) Schottky Barrier Rectifier

Infineon (Siemens) Cross Reference Results

Infineon (Siemens) Part Status Industry Part Manufacturer Description
BAS3010B-03W Buy 1N5818 Buy Diodes Inc. Medium Power IF max 500mA
BAT54 Buy 1N5818 Buy Fairchild Semiconductor High Speed Switching, Clipping and Clamping

LRC Cross Reference Results

Leshan Radio Company Part Industry Part
1N5818 Buy 1N581 Buy

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NTE Electronics Part Industry Part
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NXP Semiconductor / Philips Part Industry Part Manufacturer Type Comments
1N5817 Buy 1N5818 Buy Replacement For Discontinued NXP Product
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On Semiconductor Cross Reference Results

On Semiconductor Part Industry Part Manufacturer Type
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Pan Jit Cross Reference Results

Pan Jit Part Industry Part
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Rectron Cross Reference Results

Rectron Part Industry Part Manufacturer
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Solid State Devices Part Industry Part
SPD0901 Buy 1N5818 Buy
SPD0901SMS Buy 1N5818US Buy
SPD0902 Buy 1N5818 Buy
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STMicroelectronics Cross Reference Results

STMicroelectronics Part Industry Part Manufacturer Type Description
BYV10-40 Buy 1N5818 Buy - Nearest Preferred SIGNAL SCHOTTKY DIODES

Misc. Cross Reference Results

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