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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

1N5810 diode

Catalog Datasheet MFG & Type PDF Document Tags

1N5810 diode

Abstract: output current is 32mA. This assumes a 0.3V forward drop In the 1N5810 diode. When selecting a coil, care , external Schottky diode. The rectified and filtered 5V output Is connected back to the OUT pin to provide , circuit and is rectified by an internal diode and routed to pin 2, V+, where it is filtered by an external , external Schottky diode, D1, and filtered by an external capacitor, C2. This is the main +5V output (+3V on , . Selecting Low Power Switching Diodes The IC L644/645/646/647 use one external diode, and this diode must be
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1N5810 diode ICL7644/7645/7646/7647 ICL644 ICL645 ICL646 ICL647 ICL764X

1N5810 diode

Abstract: Case per diode 3. Pulse test: Pulse width £ 40ms www.fagorelectronica.com Document Name: 1n5810 , -204AL / DO-41 ø0.8±0.05 50 +0.2 58.5±0.5 www.fagorelectronica.com Document Name: 1n5810 ø2 , voltage (%) www.fagorelectronica.com Document Name: 1n5810 0.1 0.01 0.1 T, Pulse duration (sec , . www.fagorelectronica.com Document Name: 1n5810 Version: Oct-11 Page Number: 4/4 Fagor
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1N5817 1N5819 DO-204AL 2002/95/EC 2002/96/EC MIL-STD-750

1N5810 diode

Abstract: . Thermal Resistance from Junction to Case per diode 3. Pulse test: Pulse width £ 40ms www.fagorelectronica.com Document Name: 1n5810 Version: Feb-13 (1) Page Number: 1/4 1N5817 - 1N5819 1.0 Amp , Document Name: 1n5810 Version: Feb-13 (1) Page Number: 2/4 1N5817 - 1N5819 1.0 Amp. Schottky , Percent of rated peak reverse voltage (%) www.fagorelectronica.com Document Name: 1n5810 1.0 4 , . www.fagorelectronica.com Document Name: 1n5810 Version: Feb-13 (1) Page Number: 4/4 Fagor
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AEC-Q101 2011/65/EU J-STD-002 JESD22-B102 1N5818

1N5810 diode

Abstract: Case per diode 3. Pulse test: Pulse width £ 40ms www.fagorelectronica.com Document Name: 1n5810 , -204AL / DO-41 ø0.8±0.05 50 +0.2 58.5±0.5 www.fagorelectronica.com Document Name: 1n5810 ø2 , voltage (%) www.fagorelectronica.com Document Name: 1n5810 0.1 0.01 0.1 T, Pulse duration (sec , . www.fagorelectronica.com Document Name: 1n5810 Version: Oct-11 Page Number: 4/4 Fagor
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DIODE 1N5819 Dip

Abstract: n1n5819 % Duty Cycle 2. Thermal Resistance from Junction to Case per diode 3. Pulse test: Pulse width £ 40ms www.fagorelectronica.com Document Name: 1n5810 Version: Oct-11 Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky , www.fagorelectronica.com Document Name: 1n5810 ø2.6±0.1 Version: Oct-11 Page Number: 2/4 1N5817 - 1N5819 1.0 Amp , : 1n5810 0.1 0.01 0.1 T, Pulse duration (sec) 1 10 100 Version: Oct-11 Page Number: 3 , : 1n5810 Version: Oct-11 Page Number: 4/4 Fagor
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DIODE 1N5819 Dip n1n5819

1N5810 diode

Abstract: DIODE 1N5819 Dip diode 3. Pulse test: Pulse width £ 40ms www.fagorelectronica.com Document Name: 1n5810 Version , ) +0.2 50 58.5±0.5 www.fagorelectronica.com Document Name: 1n5810 Version: Oct-11 Page , ) www.fagorelectronica.com Document Name: 1n5810 100 125 150 175 200 100 80 60 40 20 10 0.1 0.4 , . www.fagorelectronica.com Document Name: 1n5810 Version: Oct-11 Page Number: 4/4 Fagor
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1N5815 Diode

Abstract: diode 1N5815 kHz with very low diode losses. The high forward surge capability makes these devices useful in , 1N5812 75V 1N5803 1N5808 1N5813 100V IN5804 1N5809 IN 5814 125V 1N5805 1N5810 1N5815 150V 1N5806 , IN SURFACE MOUNT PACKAGE. SEE SECTION 10 2-26 M¡erosemi Corp. Watertown 1 he diode experts , 1N5809 100V .875 @ 4A 5/iA 150fiA 30ns, 1.0-1.0-0.1A 15ns 1.5V 45pf 1N5810 125V 1N5811 150V
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1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 1N5815 Diode diode 1N5815 diode IN5804 diode 1N5813 DIODE 6 AMP 150V 1N5802 1N5807 1N5816

DIODE Schottky 1n5819 PACKAGE

Abstract: Cycle 2. Thermal Resistance from Junction to Case per diode 3. Pulse test: Pulse width £ 40ms www.fagorelectronica.com Document Name: 1n5810 Version: Feb-13 (1) Page Number: 1/4 1N5817 - 1N5819 1.0 Amp , www.fagorelectronica.com Document Name: 1n5810 ø2.7±0.2 Version: Feb-13 (1) Page Number: 2/4 1N5817 - 1N5819 1.0 , : 1n5810 0.1 0.01 0.1 T, Pulse duration (sec) 1 10 100 Version: Feb-13 (1) Page Number , . www.fagorelectronica.com Document Name: 1n5810 Version: Feb-13 (1) Page Number: 4/4 Fagor
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DIODE Schottky 1n5819 PACKAGE

in5806

Abstract: 1N5815 Diode frequency sup plies to 500 kHz with very low diode losses. The high forward surge capability makes these , 1N5804 1N5805 1N5806 2.5 AMP 1N5807 1N5808 1N5809 1N5810 1N5811 (.0 AMP 1N5812 1N5813 1N5814 , 1N5808 IN 5809 1N5810 1N5811 1N5812 1N5813 1N5814 1N5815 1N5816 50V 75V 100V 125V 150V 50V 75V 100V
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IN5802 in5806 IN5809 1N5812 diode 1N5B15 1N581E 1NS807-1NS811

IN5809

Abstract: 1N5815 Diode very low diode losses. Exceptional Efficiency Low Forward Voltage Extremely Fast Reverse Recovery , 1N5813 1N5814 1N5803 1N5804 1N5809 1N5810 1N5805 1N5806 1N5811 1N5815 1N5816 2 , . Watertown 2-26 b l l S ñb S ÃÃDEbSfi 2T5 The diode experts 1N5802-1N5806 1N5807-1N5811 , 5808 IN 5809 1N5810 1N58U 50V 75V 100V 125V 150V 50V 75V 100V 125V 150V 1N5812 IN
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1N58II

tr j 5804

Abstract: j 5804 design high current, high frequency sup plies to 500 kHz with very low diode losses. The high forward , IN 5806 2.5 A M P IN 5807 IN 5808 IN 5809 1N5810 1N5811 6.0 A M P 1N5812 1N5813 1N5814 IN , IN 5803 IN 5804 IN 5805 IN 5806 1N5807 IN 5808 IN 5809 1N5810 1N5811 1N5812 1N5813 1N5814 1N5815
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tr j 5804 j 5804 IN 5808 1N5816 diode IN5815 IN5803

1N5606

Abstract: 1N5815 Diode kHz with very low diode losses. The high forward surge capability makes these devices useful in , 1N5812 75V IN 5803 1N5808 1N5813 100V 1N5804 1N5809 IN 5814 125V 1N5805 1N5810 1N5815 150V 1N5806 , 1N5809 100V .875 @ 4A 5/uA 150/iA 30ns, 1.0-1.0-0.1A 15ns 1.5V 45pf 1N5810 125V 1N5811 150V
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1N5606 1N5802-1N5606 6A, 100v fast recovery diode 1N5807-1N5811 a body

IN5808

Abstract: IN5811 IN5809 100 TL = 75°C 4Adc 5.0 30 E 1N5810 125 (L = %") 250 msec 5.0 30 E 1N5811 150 pulse width 5.0 , he Autumn [â'¢472 Semieoruluetor Diode & SCR D.A.T.A. hook. CASE CONFIGURATION! CHART All , 1N5808 75 80 @ @ @ 5 150 125 30 1N5809 100 110 Tl = 4Adc 6Adc) 5 @ Single 50 30 1N5810 125 135 75Â
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1N5663A 1N5664 1N5664A 1N5665A IN5666 1N5667 IN5808 IN5811 diodo zener 5,6 v Zener Diode LF marking 1N5663 DO-13 IN5665

A1W TRANSISTOR

Abstract: N4001 diode 2848352 DIODE TRANSISTOR CO INC RECTIFIERS 2TC 00098 D 7^0/- O/ ETMT| 5Ã403SE ODDODTfl b DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N1183 D05 1N1615 D04 1N3743 D09 1N4006 D041 1N5002 M176 A 1N1185 D05 1N1616 D04 1N3744 D09 1N4007 D041 1N5331 D04 1N1185A D05 1N1617 A52 1N3880 D04 , 1N3900 D05 1N5807 A146t 1N3902 D05 1N5808 A146t 1N3901 D05 1N5809 A146t 1N3903 D05 1N5810 A146t , 1N5815 D04 1N5418 A248 1N5816 D04 1N5623 A109C DIODE TRANSISTOR CO,INC. SSSiSÃ"ÃS& SCHOTTKY
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1N5823 1N3981 1N4822 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 diode 1N5825 1N4044 1N5332 1N1186 1N1618 1N3882 1N5400

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 , J, JTX, JTXV I N 5808 I N 5809 1N5809, J, JTX, JTXV 1N5810 1N5811 1N5811, J, JTX, JTXV 1N5812 , ; 600V l.OA; 800V l.OA; 1000V PIN DIODE General Purpose, PIN RECTIFIER 2.5A; 50V 2.5A; 50V 2.5A , -4 PIN DIODE Low Distortion, AGC Diode ZENER 5.0W; 5 % 5.0W; 5 % SCHOTTKY RECTIFIER 50A; 30V; DO
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TRANSISTOR J 5804 NPN TRANSISTOR J 5804 j 5804 transistor TRANSISTOR J 5803 1N5615 1N5616 1N5617 1N5618 1N5619 1N5620

IN5809

Abstract: IN5808 IN5809 100 TL = 75°C 4Adc 5.0 30 E 1N5810 125 (L = %") 250 msec 5.0 30 E 1N5811 150 pulse width 5.0 , he Autumn [â'¢472 Semieoruluetor Diode & SCR D.A.T.A. hook. CASE CONFIGURATION! CHART All
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IN5670 IN5673 1N5674 1N5675 IN5676 IN5807 diode in5808 diodo zener T5 DIODO IN5812 IN5668 IN5669 IN5671 IN5672

SD5171

Abstract: IN6095 0.875 5.0 15.0 30 45 b 1n5809 100 4.0 0.875 5.0 15.0 30 45 b 1n5810 125 4.0 0.875 5.0 15.0 30 45 b , = 25°C 13) Non repetitive 8 35 msec half sine wave 14) Dual unit Specifications for each diode 151
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IN6095 IN6097 SD5171 DSR5101 diode 151 1N5809 equivalent 1N5415-1N5420 1N5615-1N5623 1N5802-1N5811 SD24116 SD51I6I

SD5171

Abstract: IN5807 0.875 5.0 15.0 30 45 B 1N5809 100 4.0 0.875 5.0 15.0 30 45 B 1N5810 125 4.0 0.875 5.0 15.0 30 45 B , Voltage pulse width, 400 «sec, duty cycle 1% TcaSB = 25°C 14) Dual unit Specifications for each diode
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T03-15 1N5415 1N5416 1N5417 1N5419 1N6811 1N580a DO-203AB Package D0G1427

diodo zener 5,6 v

Abstract: in5806 IN5809 100 TL = 75°C 4Adc 5.0 30 E 1N5810 125 (L = %") 250 msec 5.0 30 E 1N5811 150 pulse width 5.0 , he Autumn [â'¢472 Semieoruluetor Diode & SCR D.A.T.A. hook. CASE CONFIGURATION! CHART All
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Diodo zener W 1N5806 microsemi 1N5677 1N5678 1N57281191 DO-35 1N572919I 1N5730U9

diodo zener 5v

Abstract: IN5808 IN5809 100 TL = 75°C 4Adc 5.0 30 E 1N5810 125 (L = %") 250 msec 5.0 30 E 1N5811 150 pulse width 5.0 , he Autumn [â'¢472 Semieoruluetor Diode & SCR D.A.T.A. hook. CASE CONFIGURATION CHART All
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diodo zener 5v diodo m1 63 diodo 558 1N5811 power rating diodo 72 diodo Lz 66 1N5731H9 1N5732 1N5733 1N5734 1N5735 1N5736
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