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1N5624-TAP Vishay Semiconductors DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode visit Digikey Buy
1N5624GP-E3/54 Vishay Semiconductors DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode visit Digikey Buy
1N5624GP-E3/73 Vishay Semiconductors DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode visit Digikey Buy
1N5624-TR Vishay Semiconductors Diode Switching 200V 3A 2-Pin SOD-64 T/R visit Digikey Buy

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1N5624 Datasheet

Part Manufacturer Description PDF Type
1N5624 Central Semiconductor GLASS PASSIVATED RECTIFIER Original
1N5624 EIC Semiconductor Glass Passivated Rectifier Diodes Original
1N5624 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original
1N5624 General Semiconductor DIODE STANDARD RECOVERY RECTIFIER 200V 3A 2DO-201AD Original
1N5624 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original
1N5624 Taitron Components Rectifier Diode, Single, 200V, Case Style, 2-Pin Original
1N5624 Vishay Telefunken Silicon Mesa Rectifiers Original
1N5624 Central Semiconductor Glass Passivated Rectifier 5.0 Amps, 200-800 Volts, GPR-3A Case Scan
1N5624 EDAL Industries Silicon Rectifier Scan
1N5624 General Electric Semiconductor Data Book 1971 Scan
1N5624 General Electric Semiconductor Data Handbook 1977 Scan
1N5624 General Instrument Short Form Data 1976 Scan
1N5624 Harris Semiconductor 3 Amp, 200V - 800V Diodes Scan
1N5624 N/A Basic Transistor and Cross Reference Specification Scan
1N5624 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N5624 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N5624 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N5624 N/A The Diode Data Book with Package Outlines 1993 Scan
1N5624 Powerex Lead Mounted Rectifier Scan
1N5624 Solid State 200 V, 3 A standard recovery rectifier Scan
Showing first 20 results.

1N5624

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: /1n5624.html 4/12/2010 American Microsemiconductor , AMS 1N5624 4.9875 R-200 PRV 3A FREE SHIPPING On Orders over 150 Page 1 of 1 Enter Your Part # , : 1N5624 1N5624 R-200 PRV 3A Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the , 3.99 Manufacturer Partnumber: List Price: Our Price: You Save: 1N5624 $ 4.99 Information Spec , Submit 1N5624 Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order American Microsemiconductor
Original

1N5625

Abstract: 1N5625 v 1N5624 1N5625 1N5626 1N5627 w w w. c e n t r a l s e m i . c o m SILICON GLASS PASSIVATED RECTIFIERS 5.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5624 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package, designed for general , MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 1N5624 1N5625 1N5626 1N5627 UNITS Peak Repetitive , VR=Rated VRRM IF=3.0A MAX 5.0 1.0 UNITS A V R1 (9-April 2013) 1N5624 1N5625 1N5626 1N5627
Central Semiconductor
Original
1N5625 v

1N5625

Abstract: 1n5627 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features · , ) TJ TSTG 150 - 65 to + 175 - 65 to + 200 1N5624 200 140 200 1N5625 400 280 400 3.0 125 100 1N5626 600 , -Jul-05 www.vishay.com 1 1N5624 thru 1N5627 Vishay Semiconductors Electrical Characteristics (TA = 25 °C unless , = 70 °C TA= 25 °C TA= 175 °C Symbols VF IR 300 CJ 40 1N5624 1N5625 1.0 0.95 5.0 200 1N5626 1N5627 Units , Symbols RJA, RJL 1N5624 1N5625 20 10 1N5626 1N5627 Units °C/W Ratings and Characteristics Curves (TA =
Vishay Semiconductors
Original
MIL-S-19500 MIL-STD-750

1N5625

Abstract: 1N5624 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features · , ) TJ TSTG 150 - 65 to + 175 - 65 to + 200 1N5624 200 140 200 1N5625 400 280 400 3.0 125 100 1N5626 600 , -Jul-05 www.vishay.com 1 1N5624 thru 1N5627 Vishay Semiconductors Electrical Characteristics (TA = 25 °C unless , = 70 °C TA= 25 °C TA= 175 °C Symbols VF IR 300 CJ 40 1N5624 1N5625 1.0 0.95 5.0 200 1N5626 1N5627 Units , Symbols RJA, RJL 1N5624 1N5625 20 10 1N5626 1N5627 Units °C/W Ratings and Characteristics Curves (TA =
Vishay Semiconductors
Original

1N5624

Abstract: diode 1n5624 HARRIS SENICON]) SECTOR böE D H 43GS271 D0503D5 123 HHAS m harris 1N5624, 1N5625 , Soldering: 350° C/1 Os/O.375 In. (9.5mm) Lead Length Description The 1N5624, 1N5625, 1N5626, and 1N5627 , Single Phase, 60Hz, Half-Wave Resistive or Inductive Loads (Note 1 ) 1N5624 1N5625 1N5626 1N5627 UNITS , SEtlICOND SECTOR bflE D â  M302271 GG5G3Db GbT Specifications 1N5624, 1N5625, 1N5626, 1N5627 I HAS , . 2. 100|iA for 1N5626 and 1N5627. 3. 200(iA for 1N5624 and 1N5625. Typical Performance Curves < z
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OCR Scan
diode 1n5624 DIODE 1N5625 V MIL-STD-19500 M3DEE71 G05G3Q7

1N5624

Abstract: 1N5625 1N5624 thru 1N5627 Glass Passivated Junction Rectifier ted* aten Features P Case Style G3 · · · · Cavity-free glass passivated junction High temperature metallurgically bonded , 1N5624 1N5625 1N5626 1N5627 UNITS VRRM 200 400 600 800 V VRMS 140 , rated DC blocking voltage 1N5624 TA=25°C TA=175°C Typical junction capacitance at 4.0V, 1MHz , 1N5627 1.0 0.95 V 5.0 300 200 40 UNITS µA pF 10/1/99 1N5624 thru 1N5627
General Semiconductor
Original

JANTX1N5627

Abstract: JANTX1N5624 =8.3msec (Max) 1/3/ 2/3/ Vdc V Adc Adc adc °C/Watt jusec 1N5624 200 200 3.5 2.5 125 18 5 1N5625 400 , (high altitude operation): 1N5624, 1N5625, 1N5626 = 8mm Hg (100,000 ft.) 1N5627 = 33mm Hg ( 70,000 ft , : J5 or JX5 /Illustration shows marking fori 624 624 |typical 1N5624 device. J 3.5.2 Polarity - The , Subgroup 2 5 3 Forward Voltage 4011 DC Current lF-3.5 Adc 1N5624 vF 0 6 1.0 , 4016 DC method 1N5624 VR=200Vdc IR -â'¢ 1.0 /XAdc 1N5625 VR=400Vdc IR - 1.0 ¿¿Adc
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OCR Scan
JAN1N5624 JAN1N5627 JANTX1N5624 JANTX1N5627 Functional details of ic 4066 Ta650 IN5624 MIL-S-19500/432 S-15500/432

diode 1n5624

Abstract: Submit ¡ ¡ 1N5624 Availability Buy 1N5624 at our online store ! 1N5624 Information Cate gory » Diodes Class » Silicon Rectifiers Type » General -Purpose 1N5624 Specifications Milita ry
American Microsemiconductor
Original
DO-41

diode 1n5624

Abstract: vishay 1N5625 1N5624 thru 1N5627 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G3 1.0 (25.4) MIN Rev. Voltage 200 to 800V Forward Current 3.0A ed* tFeatures aten P · · · · Cavity-free glass passivated junction High temperature , temperature unless otherwise specified. Symbol 1N5624 1N5625 1N5626 1N5627 Unit VRRM , Number 88523 11-Feb-02 www.vishay.com 1 1N5624 thru 1N5627 Vishay Semiconductors formerly
Vishay Semiconductors
Original
vishay 1N5625

diode 1n5624

Abstract: 1N5624 Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability Low reverse current , , Ta = 175 °C 1N5624 1N5625 1N5626 1N5627 UNIT VRRM VRMS VDC 200 140 200 , Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1N5624 ~ 1N5627 ) FIG.2 - MAXIMUM
EIC Semiconductor
Original
UL94V-O MIL-STD-202

DIODE 1N5625 V

Abstract: diode 1n5624 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · , Weight: approx. 858 mg Parts Table Part Type differentiation Package 1N5624 VR = 200 V , otherwise specified Parameter Part Symbol Value Unit 1N5624 VR = VRRM 200 V , range Document Number 86063 Rev. 1.4, 08-Jul-05 www.vishay.com 1 1N5624 to 1N5627 Vishay , , 08-Jul-05 1N5624 to 1N5627 Vishay Semiconductors 300 PR ­ Reverse Power Dissipation ( mW
Vishay Semiconductors
Original
Sinterglass 1N5625 Specifications 2002/95/EC 2002/96/EC

diode 1n5624

Abstract: 1n5624 VISHAY 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features , ) Parts Table Part 1N5624 1N5625 1N5626 1N5627 Type differentiation VR = 200 V @ IFAV = 3 A VR = 400 V @ , reverse voltage Test condition Sub type 1N5624 1N5625 1N5626 1N5627 Peak forward surge current Repetitive , -Oct-00 www.vishay.com 1 1N5624 to 1N5627 Vishay Semiconductors Parameter Pulse energy in avalanche mode, non , 1N5624 to 1N5627 Vishay Semiconductors I FAV ­ Average Forward Current ( A ) 3.0 2.5 2.0 1.5 1.0
Vishay Semiconductors
Original
1N5625 diode MILSTD-750 88/540/EEC 91/690/EEC D-74025
Abstract: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · , Parts Table Part 1N5624 1N5625 1N5626 1N5627 Type differentiation VR = 200 V; IFAV = 3 A VR = 400 V , peak reverse voltage Test condition see electrical characteristics Part 1N5624 1N5625 1N5626 1N5627 , Document Number 86063 Rev. 1.4, 08-Jul-05 www.vishay.com 1 1N5624 to 1N5627 Vishay Semiconductors , . Forward Voltage www.vishay.com 2 Document Number 86063 Rev. 1.4, 08-Jul-05 1N5624 to 1N5627 Vishay Semiconductors
Original

diode 1n5624

Abstract: 1N5624 Certificate TH97/10561QM 1N5624 - 1N5627 Certificate TW00/17276EM GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes DO - 201AD FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability Low reverse current , Forward Voltage at I F = 3.0 A , Ta = 175 °C 1N5624 1N5625 1N5626 1N5627 UNIT VRRM , CURVES ( 1N5624 ~ 1N5627 ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 3.0 60
EIC Semiconductor
Original
DO-201AD

diode 1n5624

Abstract: 1N5624 with forward current 5 amp 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA , otherwise specified. SYMBOLS 1N5624 1N5625 1N5626 1N5627 UNITS VRRM 200 400 , RATINGS AND CHARACTERISTIC CURVES 1N5624 THRU 1N5627 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC
General Semiconductor
Original
1N5624 with forward current 5 amp

1N5625

Abstract: 1N5625 diode 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode , Rectification diode, general purpose PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 TYPE DIFFERENTIATION VR = , = 175 °C I(BR)R = 1 A, Tj = 175 °C TEST CONDITION PART 1N5624 See electrical characteristics 1N5625 , , DiodesAsia@vishay.com, DiodesEurope@vishay.com 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard , Document Number: 86063 Rev. 1.5, 21-Sep-10 1N5624, 1N5625, 1N5626, 1N5627 Standard Avalanche
Vishay Semiconductors
Original

1N5624

Abstract: 1N5625 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA , otherwise specified. SYMBOLS *Maximum repetitive peak reverse voltage 1N5624 1N5625 1N5626 , CURVES 1N5624 THRU 1N5627 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 100 10 1
General Semiconductor
Original

JANTX1N5624

Abstract: 1N5B26 POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N5624 THRU 1N5627 PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 3.5 Amperes_ FEATURES High temperature metallurgically bonded Hermetically sealed package Glass passivated cavityfree junction 3.5 ampere operation at T , ,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS 1N5624 1N5625 1N5B26 , CHARACTERISTIC CURVES JAN AND JANTX 1N5624 THRU 1N5627 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE
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OCR Scan

1N5625 PIV

Abstract: 1N5060 G4A G4B G4D G4G G4J G4K G4M 1N5624 1N5625 1N5626 1N5627 G3A G3B G3D G3G G3J G3K G3M 1N5624 1N5625 1N5626 1N5627 40 CrossReference 1N5059 1N5060 1N5061 1N5062 1N4245 1N4246 , G3G G3J G3K 1N5624 1N5625 1N5626 1N5627 - Max. Average Rectified Current Peak Inverse
Taitron Components
Original
1N4247 1N4248 1N4249 1N5614 1N5616 BYW55 1N5625 PIV byw55 byw56 byt51a BYW52 200 1N5618
Abstract: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High , , Ta = 25 °C Maximum Forward Voltage at I F = 3.0 A , Ta = 175 °C 1N5624 1N5625 1N5626 , 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1N5624 ~ 1N5627 ) FIG.2 - MAXIMUM EIC Semiconductor
Original

DIODE 1N5625 V

Abstract: vishay 1N5625 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode , Rectification diode, general purpose PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 TYPE DIFFERENTIATION VR = , = 175 °C I(BR)R = 1 A, Tj = 175 °C TEST CONDITION PART 1N5624 See electrical characteristics 1N5625 , , DiodesAsia@vishay.com, DiodesEurope@vishay.com 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard , Document Number: 86063 Rev. 1.5, 21-Sep-10 1N5624, 1N5625, 1N5626, 1N5627 Standard Avalanche
Vishay Semiconductors
Original
DIODE 1N5625 2011/65/EU
Abstract: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche , -64 1N5627 1N5627 PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 ABSOLUTE MAXIMUM RATINGS (Tamb = , electrical characteristics 1N5624 1N5625 1N5626 1N5627 VR = VRRM VR = VRRM VR = VRRM VR = VRRM , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors
Original
1N5627-TR 1N5627-TAP JS709A
Abstract: 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche , SOD-64 SOD-64 SOD-64 SOD-64 1N5627 1N5627 PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 , SYMBOL VALUE UNIT See electrical characteristics 1N5624 1N5625 1N5626 1N5627 VR = VRRM , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624, 1N5625 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624, 1N5625 Vishay Semiconductors
Original

1N5628

Abstract: 670-SSDI PRELIMINARY 1N5624 thru SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) · Fax: (714) 522-7424 1N5628 Designer's Data Sheet FEATURES: Fast Recovery: 5 |isec maximum PIV to 1000 Volts Low Reverse Leakage Current Hermetically Sealed Single Chip Construction High Surge Rating Low Thermal Resistance Available in surface mount versions TX, TXV , prior to release. DATA SHEET#: R00019 A RMD 1N5624 thru PRELIMINARY 1N5628 ELECTRICAL
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OCR Scan
Showing first 20 results.