1N5550 1N5552 MIL-STD-750 1N5551 88/540/EEC 91/690/EEC D-74025

VISHAY Vishay Semiconductors Standard Sinterglass Diode Features · Cavity-free glass passivated junction · High

1N5550 1N5550 to 1N5552 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features · Cavity-free glass passivated junction · High temperature metallurgically bonded construction · Hermetically sealed package · Medium switching for improved efficiency Mechanical Data Case: Sintered glass case, G4 Terminals: Solder plated axial leads, solderable per MIL-STD-750 MIL-STD-750, Method 2026 17133 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 1040 mg Parts Table Part Type differentiation Package 1N5550 1N5550 VRRM = 200 V G-4 1N5551 1N5551 VRRM = 400 V G-4 1N5552 1N5552 VRRM = 600 V G-4 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Value Unit VR = VRRM 200 V VR = VRRM 400 V 1N5552 1N5552 see electrical characteristics 1N5550 1N5550 1N5551 1N5551 Reverse voltage = Repetitive peak reverse voltage VR = VRRM 600 V Maximum average forward rectified current 0.375 " (9.5 mm) lead length at Tamb = 55 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A TJ, TSTG - 55 to + 175 °C Operating and storage temperature range Document Number 86080 Rev. 1.3, 11-Aug-04 www.vishay.com 1 1N5550 1N5550 to 1N5552 1N5552 VISHAY Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Value Unit RJA 22 K/W RJL Typical thermal resistance Symbol 12 K/W 1) 1) Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between heat sinks. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Min 1N5550 1N5550 V(BR) 240 V 1N5551 1N5551 V(BR) 460 V 1N5552 1N5552 IR = 50 µA Minimum reverse breakdown voltage Typ. Max Unit V(BR) 660 V Maximum instantaneous forward voltage IF = 9.0 A VF 1.2 V Maximum reverse current VR = VRRM, Tamb = 25 °C IR 1.0 µA IR 25 µA 1N5550 1N5550 Cj 150 pF 1N5551 1N5551 Cj 120 pF 1N5552 1N5552 Cj 100 pF trr 2.0 µs VR = VRRM, Tamb = 100 °C VR = 12 V, f = 1 MHz Maximum junction capacitance Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical Characteristics (Tamb = 25 °C unless otherwise specified) Average Forward Current (A) TL , Lead Temperature L = 0.375" (9.5mm) 4.0 TJ = TJmax 8.3ms Single Half Sine-Wave (JEDEC Method) 100 0.8 x 0.8 x .040" (20 x 20 x 1mm) Copper Heatsinks 3.0 2.0 TA, Ambient Temperature 0.375" (9.5mm) Lead Length P.C.B. Mounting 1.0 Resistive or Inductive Load 0 0 25 50 75 100 125 150 175 Temperature (°C) g1n5550_01 Figure 1. Forward Current Derating Curve www.vishay.com 2 Instantaneous Forward Surge Current (A) 200 5.0 200 10 1 g1n5550_02 10 100 Number of Cycles at 60 HZ Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 86080 Rev. 1.3, 11-Aug-04 1N5550 1N5550 to 1N5552 1N5552 VISHAY Vishay Semiconductors Instantaneous Forward Current (A) 50 10 TJ = 150°C Pulse Width = 300s 1% Duty Cycle 1 TJ = 25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) g1n5550_03 Figure 3. Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (µA) 20 10 TJ = 125°C 1 TJ = 75°C 0.1 TJ = 25°C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) g1n5550_04 Figure 4. Typical Reverse Characteristics 100 Junction Capacitance (pF) TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 10 1 1 0 100 Reverse Voltage (V) g1n5550_05 Figure 5. Typical Junction Capacitance Document Number 86080 Rev. 1.3, 11-Aug-04 www.vishay.com 3 1N5550 1N5550 to 1N5552 1N5552 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 4.6 (0.180) 25.4 (1.0) MIN. 2.9 (0.115) DIA. 7.6 (0.300) MAX. 1.07 (0.042) 0.962 (0.038) DIA. 25.4 (1.0) MIN. 17032 www.vishay.com 4 Document Number 86080 Rev. 1.3, 11-Aug-04 1N5550 1N5550 to 1N5552 1N5552 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86080 Rev. 1.3, 11-Aug-04 www.vishay.com 5