1N5221B 1N5267B TZM5267 MMBZ5225 MMBZ5267 MMSZ5225 MMSZ5267 DO-35 1N5222B - Datasheet Archive

 

VISHAY Vishay Semiconductors Silicon Zener Diodes Features · Silicon Planar Power Zener Diodes. · Standard Zener

 

1N5221B 1N5221B to 1N5267B 1N5267B VISHAY Vishay Semiconductors Silicon Zener Diodes Features · Silicon Planar Power Zener Diodes. · Standard Zener voltage tolerance is ± 5 % with a "B" suffix. 2 % available upon request. · These diodes are also available in MiniMELF case with the type designationTZM5221 .TZM5267 TZM5267, SOT-23 case with the type designation MMBZ5225 MMBZ5225 .MMBZ5267 MMBZ5267 and SOD-123 case with the types designation MMSZ5225 MMSZ5225 . MMSZ5267 MMSZ5267 94 9367 Applications Voltage stabilization Mechanical Data Packaging codes/options: TAP / 10k per Ammopack (52 mm tape), 30k/box TR / 10k per 13 " reel , 30k/box Case: DO-35 DO-35 Glass Case Weight: approx. 130 mg Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit PV 500 mW IZ Power dissipation PV/VZ mA TL 75 °C Z-current Junction temperature Tj 200 °C Tstg - 65 to + 200 °C Test condition Symbol Value Unit l = 9.5 mm (3/8 "), TL=constant RthJA 300 K/W Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85588 Rev. 1.5, 02-Oct-03 Test condition IF = 200 mA Symbol VF Min Typ. Max Unit 1.1 V www.vishay.com 1 1N5221B 1N5221B to 1N5267B 1N5267B VISHAY Vishay Semiconductors Electrical Characteristics 1N5221B 1N5221B.1N5267B 1N5267B Partnumber Nominal Zener Test Current Voltage1) Maximum Dynamic Impedance1) @ IZT, VZ IZT ZZT @ IZT Maximum Dynamic Impedance Typical Temperature of Coeffizient ZZK @ IZK = 0.25 mA @ IZT Maximum Reverse Leakage Current IR VR V mA (%/K) µA V 1N5221B 1N5221B 2.4 20 30 1200 -0.085 100 1 1N5222B 1N5222B 2.5 20 30 1250 -0.085 100 1 1N5223B 1N5223B 2.7 20 30 1300 -0.080 75 1 1N5224B 1N5224B 2.8 20 30 1400 -0.080 75 1 1N5225B 1N5225B 3 20 29 1600 -0.075 50 1 1N5226B 1N5226B 3.3 20 28 1600 -0.070 25 1 1N5227B 1N5227B 3.6 20 24 1700 -0.065 15 1 1N5228B 1N5228B 3.9 20 23 1900 -0.060 10 1 1N5229B 1N5229B 4.3 20 22 2000 +0.055 5 1 1N5230B 1N5230B 4.7 20 19 1900 +0.030 5 2 1N5231B 1N5231B 5.1 20 17 1600 +0.030 5 2 1N5232B 1N5232B 5.6 20 11 1600 +0.038 5 3 1N5233B 1N5233B 6 20 7 1600 +0.038 5 3.5 1N5234B 1N5234B 6.2 20 7 1000 +0.045 5 4 1N5235B 1N5235B 6.8 20 5 750 +0.050 3 5 1N5236B 1N5236B 7.5 20 6 500 +0.058 3 6 1N5237B 1N5237B 8.2 20 8 500 +0.062 3 6.5 1N5238B 1N5238B 8.7 20 8 600 +0.065 3 6.5 1N5239B 1N5239B 9.1 20 10 600 +0.068 3 7 1N5240B 1N5240B 10 20 17 600 +0.075 3 8 1N5241B 1N5241B 11 20 22 600 +0.076 2 8.4 1N5242B 1N5242B 12 20 30 600 +0.077 1 9.1 1N5243B 1N5243B 13 9.5 13 600 +0.079 0.5 9.9 1N5244B 1N5244B 14 9 15 600 +0.082 0.1 10 1N5245B 1N5245B 15 8.5 16 600 +0.082 0.1 11 1N5246B 1N5246B 16 7.8 17 600 +0.083 0.1 12 1N5247B 1N5247B 17 7.4 19 600 +0.084 0.1 13 1N5248B 1N5248B 18 7 21 600 +0.085 0.1 14 1N5249B 1N5249B 19 6.6 23 600 +0.086 0.1 14 1N5250B 1N5250B 20 6.2 25 600 +0.086 0.1 15 1N5251B 1N5251B 22 5.6 29 600 +0.087 0.1 17 1N5252B 1N5252B 24 5.2 33 600 +0.088 0.1 18 1N5253B 1N5253B 25 5 35 600 +0.089 0.1 19 1N5254B 1N5254B 27 4.6 41 600 +0.090 0.1 21 1N5255B 1N5255B 28 4.5 44 600 +0.091 0.1 21 1N5256B 1N5256B 30 4.2 49 600 +0.091 0.1 23 1N5257B 1N5257B 33 3.8 58 700 +0.092 0.1 25 1N5258B 1N5258B 36 3.4 70 700 +0.093 0.1 27 1N5259B 1N5259B 39 3.2 80 800 +0.094 0.1 30 1N5260B 1N5260B 43 3 93 900 +0.095 0.1 33 1N5261B 1N5261B 47 2.7 105 1000 +0.095 0.1 36 1N5262B 1N5262B 51 2.5 125 1100 +0.096 0.1 39 1N5263B 1N5263B 56 2.2 150 1300 +0.096 0.1 43 1N5264B 1N5264B 60 2.1 170 1400 +0.097 0.1 46 www.vishay.com 2 Document Number 85588 Rev. 1.5, 02-Oct-03 1N5221B 1N5221B to 1N5267B 1N5267B VISHAY Vishay Semiconductors Partnumber Nominal Zener Test Current Voltage1) Maximum Dynamic Impedance1) @ IZT, VZ IZT ZZT @ IZT Maximum Dynamic Impedance Typical Temperature of Coeffizient ZZK @ IZK = 0.25 mA Maximum Reverse Leakage Current @ IZT IR VR V (%/K) µA V 62 2 185 1400 +0.097 0.1 47 1N5266B 1N5266B 68 1.8 230 1600 +0.097 0.1 52 1N5267B 1N5267B 1) mA 1N5265B 1N5265B 75 1.7 270 1700 +0.098 0.1 56 Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W 1.3 500 VZtn ­ Relative VoltageChange RthJA ­Therm.Resist.Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 400 300 l l 200 100 1.2 TK VZ =10 x 10­4/K 1.1 8 x 10­4/K 6 x 10­4/K 4 x 10­4/K 2 x 10­4/K 0 1.0 ­2 x 10­4/K ­4 x 10­4/K 0.9 TL=constant 0.8 ­60 0 0 5 10 20 15 l ­ Lead Length ( mm ) 95 961 1 Tj =25°C 100 I Z=5mA 10 5 95 9598 10 15 20 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Document Number 85588 Rev. 1.5, 02-Oct-03 180 240 500 400 300 200 100 0 25 V Z ­ Z-Voltage ( V ) 120 600 1 0 60 Figure 3. Typical Change of Working Voltage vs. Junction Temperature P ­Total Power Dissipation ( mW) tot 1000 0 Tj ­ Junction Temperature (°C ) 95 9599 Figure 1. Thermal Resistance vs. Lead Length VZ ­VoltageChange mV ) ( V Ztn=V Zt/V Z(25°C) 95 9602 0 40 80 120 160 200 Tamb ­ Ambient T emperature(°C ) Figure 4. Total Power Dissipation vs. Ambient Temperature www.vishay.com 3 1N5221B 1N5221B to 1N5267B 1N5267B VISHAY TK VZ ­Temperature Coefficient of VZ ( 10­4 /K) Vishay Semiconductors 100 80 IZ ­ Z-Current ( mA) 15 10 5 I Z=5mA 0 Ptot=500mW Tamb=25°C 60 40 20 0 ­5 0 10 20 30 40 V Z ­ Z-Voltage ( V ) 95 9600 0 50 16 20 V Z ­ Z-Voltage ( V ) 50 150 V R=2V Tj =25°C 100 50 Ptot=500mW Tamb=25°C 40 IZ ­ Z-Current ( mA) CD ­ Diode Capacitance ( pF ) 12 Figure 8. Z-Current vs. Z-Voltage 200 30 20 10 0 0 0 5 10 15 20 15 25 V Z ­ Z-Voltage ( V ) 95 9601 20 10 Tj =25°C 1 0.1 0.01 1000 I Z=1mA 100 5mA 10 10mA Tj =25°C 1 0.001 0 0.2 0.4 0.6 0.8 Figure 7. Forward Current vs. Forward Voltage www.vishay.com 0 1.0 V F ­ Forward Voltage ( V ) 95 9605 35 30 Figure 9. Z-Current vs. Z-Voltage r Z ­ Differential Z-Resistance ( ) 100 25 V Z ­ Z-Voltage ( V ) 95 9607 Figure 6. Diode Capacitance vs. Z-Voltage I F ­ Forward Current ( mA) 8 95 9604 Figure 5. Temperature Coefficient of Vz vs. Z-Voltage 4 4 95 9606 5 10 15 20 25 V Z ­ Z-Voltage ( V ) Figure 10. Differential Z-Resistance vs. Z-Voltage Document Number 85588 Rev. 1.5, 02-Oct-03 1N5221B 1N5221B to 1N5267B 1N5267B VISHAY Zthp ­ThermalResistance PulseCond.(K/W) for Vishay Semiconductors 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 RthJA=300K/W 300K/W T=Tjmax­Tamb tp/T=0.01 tp/T=0.1 tp/T=0.02 tp/T=0.05 1 10­1 i ZM =(­VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 100 101 102 tp ­ Pulse Length ( ms ) 95 9603 Figure 11. Thermal Response Package Dimensions in mm Cathode Identification 0.55 max. technical drawings according to DIN specifications 94 9366 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3g Document Number 85588 Rev. 1.5, 02-Oct-03 26 min. 3.9 max. 26 min. www.vishay.com 5 1N5221B 1N5221B to 1N5267B 1N5267B VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85588 Rev. 1.5, 02-Oct-03