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1N483B Datasheet

Part Manufacturer Description PDF Type
1N483B Compensated Devices GENERAL PURPOSE SILICON DIODES Original
1N483B Fairchild Semiconductor DIODE STANDARD RECOVERY RECTIFIER 80V 0.2A 2DO-35 BULK Original
1N483B Microsemi High Conductance DO-35 Diodes Original
1N483B Microsemi Signal or Computer Diode Original
1N483B Taitron Components Rectifier Diode, Single, 150V, SOD-27|SOD-68, 2-Pin Original
1N483B Crimson Semiconductor SILICON DIODES Scan
1N483B Crimson Semiconductor Silicon Diodes, DO-7 or DO-35 Scan
1N483B Fairchild Semiconductor General purpose low leakage diode. Working inverse voltage 70V. Scan
1N483B Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
1N483B General Diode Silicon Diode Selection Guide Scan
1N483B General Semiconductor Low Power Miniature Glass Passivated Junction Rectifier Scan
1N483B Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan
1N483B Microsemi General Purpose Silicon Diodes Scan
1N483B Microsemi Data Book 1983 Scan
1N483B Motorola Motorola Semiconductor Datasheet Library Scan
1N483B N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N483B N/A Basic Transistor and Cross Reference Specification Scan
1N483B N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N483B N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N483B N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

1N483B

Catalog Datasheet MFG & Type PDF Document Tags

1N435B

Abstract: 1N4838 DIODE General Purpose Low Current JAN & JANTX 1N483B JAN &JANTX 1N435B FEATURES â , , industrial and commercial equipment. ABSOLUTE MAXIMUM RATINGS, AT 25°C 1N483B 1N485B Reverse Breakdown , . â'"65°C to +200°C MECHANICAL SPECIFICATIONS J & JTX 1N483B, 1N485B A INCHES MILLIMETERS A , /79 612 mmm UNITRODE JAN & JANTX 1N483B & 1N485B ELECTRICAL SPECIFICATIONS (at 25°C unless noted , , 8.5msec dc = 2% MAX. 1N483B 1N485B 25nA @ 70Vdc 25nA @ 180Vdc 100 juA(pk) @ 80V(pk) 100 /iA(pk) @ 200V(pk
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1N4838 180VDC JANTX 1N483B 1N4858 MIL-S-19500/118
Abstract: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25° unless otherwise noted C Parameter Value Unit VRRM Maximum Repetitive , nA µA 1N483B Rev. A 1 80 Units Breakdown Voltage ©2005 Fairchild Semiconductor Corporation IR = 100µA Min. VR V www.fairchildsemi.com 1N483B Small Signal Diode January , information only. Rev. I15 2 1N483B Rev. A www.fairchildsemi.com 1N483B Small Signal Diode Fairchild Semiconductor
Original
Abstract: qualification data Product 1N483B 1N483BTR back to top © 2007 Fairchild Semiconductor Products | Design , 1N483B Small Signal Diode January 2005 1N483B Small Signal Diode DO-35 Color Band , °C ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 1N483B Rev. A 1N483B , Needed Full Production Obsolete Not In Production Rev. I15 2 1N483B Rev. A , COMPANY INVESTORS | Sitema MY FA Home >> Find products >> 1N483B Related Links Request Fairchild Semiconductor
Original

1n485b

Abstract: DIODE General Purpose Low Current 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B FEATURES · · · · Metallurgical Bond Qualified to MIL-S-19500/118 Planar Passivated Chip DO-7 Package , 1N483B 80V 70V 1N485B 200V 180V Average Output Current @ TA = 25*C , 1N483B, 1N485B; JAN JANTX 1N483B & 1N485B ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Reverse , % MAX. Type 1N483B 1N485B 25nA @ 7QVdc 25nA @ 180Vdc 100 *iA(pk) @ 80V(pk) 100 ¿iA(pk) @
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N5194

Abstract: JAN1N486B . [51] 1.0 MIN. [25.41 .160 MAX. [4061 T .075 MAX. DIA. 1.90 FIGURE IB PACKAGE 00-35 7-7 1N483B- , 1N483B thru 1N486B and 1N5194 thru 1N5196 FEATURES â'¢ Voidless hermetically sealed glass package , 25°C 150°C 25°C 150°C JAN 1N483B 70 80 .2 .05 1.0V (pk) .025 5 2 8 JAN 1N485B 180 200 .2 .05 , SAME AS JAN 1N483B Ì SAME AS JAN 1N485B > EXCEPT SAME AS JAN 1N486B J PACKAGE D035 PACKAGE: D07 for JAN 1N483B, 485B, 486B. D035 for JAN 1N5194, JAN 1N5195, and JAN 1N5196. NOTE 1: l0 = 200mAdc, 10
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N5194 JAN1N486B N5195 D035 JAN1N485B 979-K220 MIL-S-19500/118C

IN483

Abstract: IN485 1N483B 1N485B 1N486B · AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 · GENERAL PURPOSE SILICON DIODES · METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 , /120 s V (pk) V (pk) mA mA TA = 25°C A 1N483B 1N485B 1N486B 80 180 250 70 , °C V dc 1N483B 1N485B 1N486B 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 I R2 at V RM TA = 25°C I R3
Compensated Devices
Original
IN483B IN485B IN486B IN483 IN485

1N483B

Abstract: 1N485B , SILICON, TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N5195US,1N5196 , herein shall consist of this specification sheet and MIL-PRF-19500. Types 1N483B, 1N485B, 1N486B are , /W 80 70 200 50 2 -65 to +175 °C/W 250 250 Type (1) 1N483B 1N5194 , characteristics at TA = +25°C, unless otherwise indicated. VF1 Type 1N483B, 1N5194, 1N5194UR, 1N5194US , 1N483B 1N485B 1N486B (DO-7/35) BD BL LD LL Dimensions Inches Millimeters Min Max Min
DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/118J 1N5196UR 1N5196US DO-213AA

FD333

Abstract: JAN1N486B JAN 1N483A 1N483B 1N483B JAN 1N483B JAN TX 1N890 1N457 1N457 JAN 1N457A 1N482A 1N482B FJT1100
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FD333 1N486 1N486A 1N459 1N459A 1N485A FD300
Abstract: 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 70 to 225 Volts Current 200 Milliamperes - FEATURES High temperature metallurgically bonded con structed rectifiers 0.2 Ampere oper^ ation at Ta = 25*C with no thermal runaway Typical I r less than 0.1 n A , , resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS 1N483B 1N4S5B 1N496B UNITS , CHARACTERISTIC CURVES 1N483B THRU 1N486B FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE -
OCR Scan
MIL-S-19500 MIL-STD-202

sol 4011 be

Abstract: 1N483B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5195 , SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5195, 1N5196 JAN , ¡If lTop and TSTG I lV(pk) 1 1 V(pk) 1 1 mA dc 1 1 mA dc A(pk) 1 ImA dc I °c 1 1N483B, 1N5194 1 , VFI i }ZR1 at VRWM 1 IÌR2 ! Ta at VRWM j = 150°C 1 1 1N483B, 1N5194 V dc tnr 1 1 nA dc 1 25 1 1 1 I , with metric equivalents (mm) in parentheses (see note 1) Notes Minimum Maximum 1N483B A .230
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sol 4011 be 1N4866 MIL-S-19500/118D IN5194 MIL-STD-750 MIL-S-19500/

n5195

Abstract: JAN1N486B 1 - T ,076 MAX. DIA. 1.90 FIGURE IB PA C KAG E 7-7 1N483B- 1N486B. 1N5194 - 1N5196 , M ierosemi Corp. 1 The óiode experts SMISTA A N A CA F o r m o re in fo rm a tio n cali: , (714) 979-8220 71 1N483B thru 1N486B and 1N5194 thru 1N5196 FEATURES · · · · · V oidless h e , .) (NOTE 1} \f surge AM PS 150°C JUNCTION CAPACITANCE C &' OV vw TYPE iA 25°C PF JAN 1N483B , ) .025 5 (a > 2 .025 5 8 2 100mA .025 5 8 pulse SAME AS JAN 1N483B 1 SAME AS JAN 1N485B > EXCEPT: PACKAGE
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1N4868

Abstract: lt 8220 1N483B-1N486B 1N51I94-1N5196 FEATURES â'¢ Voidless hermetically sealed glass package. â , Information call: (714) 979-8220 51 1N483B- 1N486B, 1N5194 - 1N5196 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 , °C 150°C 25°C 150°C JAN 1N483B 70 80 2 .05 1.0V (pk) .025 5 2 8 JAN 1N485B 180 200 .2 .05 @ .025 5 2 8 JAN 1N486B 225 250 .2 .05 100mA Dulse .025 5 2 8 JAN 1N5194 SAME AS JAN 1N483B1 JAN , for JAN 1N483B, 485B, 486B. D035 for JAM 1N5194, JAN 1N5195, and JAN 1N5196. NOTE 1: l0 = 200m Adc
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1N4868 lt 8220
Abstract: October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N483B , specification sheet and MIL-PRF-19500. Types 1N483B, 1N485B, 1N486B are inactive for new design. See 6.4. 1 , mA 200 50 Type (1) 1N483B 1N5194 1N5194UR 1N5194US 1N485B 1N5195 1N5195UR 1N5195US , +25°C, unless otherwise indicated. VF1 Type 1N483B, 1N5194, 1N5194UR, 1N5194US 1N485B, 1N5195 , MIL-PRF-19500. 2 MIL-PRF-19500/118H 1N483B 1N485B 1N486B (DO-7/35) BD BL LD LL Microsemi
Original
MIL-PRF-19500/118G

1N483B

Abstract: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive , nA µA 1N483B Rev. A 1 80 Units Breakdown Voltage ©2005 Fairchild Semiconductor Corporation IR = 100µA Min. VR V www.fairchildsemi.com 1N483B Small Signal Diode January , reference information only. Rev. I15 2 1N483B Rev. A www.fairchildsemi.com 1N483B Small Signal
Fairchild Semiconductor
Original
Abstract: â  UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General , en t. A B S O L U T E M A X IM U M RATINGS, A T 25°C 1N483B 80V 70V Reverse Breakdown V , . â'" 65°C to +200°C M E C H A N IC A L S P E C IF IC A T IO N S J & JTX 1N483B, 1N485B A B C D INCHES 0 85 - 125 230- 300 1 0 M IN .-1 5 MAX 0 18 - 022 DO-7 1N483BJ, JTX , A T IO N S (at 2 5 'C un less noted) i - 1N483B 1N485B Reverse Current @ 25*C -
OCR Scan
1N485BJ

IN485B

Abstract: IN486B 1N483B 1N485B 1N486B · AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 · GENERAL PURPOSE SILICON DIODES · METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 , /120 s V (pk) V (pk) mA mA TA = 25°C A 1N483B 1N485B 1N486B 80 180 250 70 , °C V dc 1N483B 1N485B 1N486B 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 I R2 at V RM TA = 25°C I R3
Microsemi
Original

1N4868

Abstract: 1N233 .4]-» .235 MAX. - [6.0] - 3SHZ] .110 MAX. DIA. [2.8] 49 1N483B-1N486B 1N51I94-1N5196 FEATURES â , - 0.75 IB PACKAGE[ For more Information call: (714) 979-8220 51 1N483B- 1N486B, 1N5194 - , (ifl 1N483B 1N485B 1N486B 80 200 250 .2 .2 .2 1.0 1.0 1.0 .025 .025 .025 D07 D07 DO 7 1N645-1 , AttPS VOLTS j.A AMPS PF 25°C 150°C 25°C 150°C JAN 1N483B 70 80 2 .05 1.0V (pk) .025 5 2 8 , SAME AS JAN 1N483B1 JAN 1N5195 JAN 1N5196 SAME AS JAN 1N485B }â'¢ EXCEPT: PACKAGE D035 SAME
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1N2250 1N227 1N2320 1N233 1N235 1N236 zener diode 1N429 1N239 1N471 IN4858 IN4868 diode 1N226I1 1N228C 1N229C 1N2301D

JAN1N486B

Abstract: JANTX 1N483B iNstim - POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE 70 to 225 Volts CURRENT 200 Milliamperes - 1.50 (38.1) 1 .0 0(25.4) T Î FEATURES Qualified to MIL-S-19500/118C High temperature metallurgical^ bonded 0.2 amperes operation at ^ TA = 25'Cwith no thermal runaway Hermetically sealed package Ideally suited , _ JAN AND JANTX 1N483B THRU 1N486B FIG. 2 - MAXIMUM NON-REPETITIVE PEAK Ow OC UJ D tr
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JAN-TX1N483B MI-STD-202

1N486B JANTX

Abstract: 1N483B GENL INSTR/ POWER 3ÃE D 30^0137 OOOMMÃS T «GIC T^f-t? 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 70 to 225 Volts Current - 200 Milliamperes FEATURES DQ-204MB .023(0.6) .018(0.5) 1.0125.4) hid. 3S> (7.6) ît5î 1 J) (25.4) mm. Dimension m inches and (millimeters) 'Brazed-lead assembly is covered by Patent No. 3.930,306 of 18?B ♦ High , ⡠«6IC RATING AND CHARACTERISTIC CURVES 1N483B THRU 1N486B FIG. 2 â'" MAXIMUM NON-REPETITIVE
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1N486B JANTX D0204MB D0-204MB T0137

1N483A Diode

Abstract: 1n483 diode FEATURES 1N483B · · · · · · 1N483B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N483 & 1N483A MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS: Total Power Dissipation, 25°C: Power Derating Factor, 25°C: Max. Operating Current, 25°C: Derating Factor: Max. Operating Current, 150°C: Derating Factor: D.C. Reverse Voltage
Microsemi
Original
1N483A Diode 1n483 diode MILPRF-19500/118

diode 483b

Abstract: 483B Microsemi Corp. $ The diode e>perts SANTA ANA, CA F o r m ore in fo rm a tio n call: j / SCOTTSDALE, AZ 1N483B thru 1N486B and 1N5194 thru 1N5196 (7I4) 979-8220 FEA TU R ES · · · · V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35). T r ip le la y e r p a ssiv a tio n . M e ta llu r g ic a lly b o n d e d . T X ty p e s a v a ila b le p e r M IL -S -1 9 5 0 0 / 1 , suige AMPS JUNCTION CAPACITANCE C ® OV .300 MAX. f7.S2| TYPE 'if VOLTS PF J A N 1N483B J
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diode 483b 483B BY100 marking E 1n diode JAN1N 1N5194-
Showing first 20 results.