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1N4607 Microsemi Corporation Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35 visit Digikey Buy

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Part : 1N4607 Supplier : American Power Devices Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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1N4607 Datasheet

Part Manufacturer Description PDF Type
1N4607 Microsemi Silicon Switching Diode Original
1N4607 APD Semiconductor Planar Diodes Scan
1N4607 APD Semiconductor Planar Diodes, DO-35 Case Scan
1N4607 BKC International Silicon Diodes Scan
1N4607 General Diode Silicon Switching Diode Scan
1N4607 General Electric Semiconductor Data Book 1971 Scan
1N4607 General Electric Semiconductor Data Handbook 1977 Scan
1N4607 Motorola Motorola Semiconductor Datasheet Library Scan
1N4607 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N4607 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N4607 N/A The Diode Data Book with Package Outlines 1993 Scan
1N4607 N/A Basic Transistor and Cross Reference Specification Scan
1N4607 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N4607 Panasonic Silicon epitaxial planar type diode. Scan
1N4607 Texas Instruments Discrete Devices 1978 Scan
1N4607 Unitrode International Semiconductor Data Book 1981 Scan

1N4607

Catalog Datasheet MFG & Type PDF Document Tags

1N4452

Abstract: 1N4608 . ELECTRICAL SPECIFICATIONS (at 25 °C unless noted) â  ^347^3 GGlHSbl 45à â UNIT 1N4452, 1N4607,1N4608 , conductance switching applications such as core memories. 1N4452 1N4607 1N4608 40V . 85V . , 1N4452 40V 0.42 0.54 0.51 0.62 0.60 0.71 0.71 0.83 1N4607 85V 0.39 0.50 0.50 0.60 0.61 0.72 0.74 , max min max Vr nA Vr UR Vr Hk OV trr 1N4452 _ 1.0 0.90 1.2 30 50 â'" â'" 30 50 _ 50nS 1N4607 â'" â
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OCR Scan
DO-35

1N4150

Abstract: 1N4450 Diodes @ISI 1N4451 1N4607.8 This family of General Electric Double Heatsink Diodes are high , ) 1N445I 40 50 30 1.00 300 6 10 D035 38 1N4607 85 100 50 1.00 400 4 10 D035 38 1N460B 85 100 50 , , epitaxial layer grown on a low resistivity silicon substrate. The 1N4451, 1N4607, and 1N4608 feature , Dissipation* Temperature Operating Storage 1N4451 1N4607 1N4608 30 70 70 . 200 â  600 â 250 4 â'¢ 500 , °C. electrical characteristics: (25°C) (unless otherwise specified) 1N4451 1N4607 1N4608 Forward Voltage
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OCR Scan
1N4150 1N4450 1N4606 DT230C DT230H JS-2-65-11 D035 DT230KI
Abstract: COMPUTER DIODE High Conductance FEATURES · · · · Metallurgical Bond Planar Passivated High Conductance DO-35 Package 1N4452, 1N4607, 1N4608 DESCRIPTION This series offers Metallurgical Bonding , . 500mAdc . 1N4607 Peak Reverse Voltage . Reverse Working Voltage. Average Rectified C , to+200°C. Type 1N4452 1N4607 1N4608 Forward Voltage @ 250mA min max , Reverse Recovery Time trr _ - 1.1 - _ 11 Type 1N4452 1N4607 1N4608 Forward Forward -
OCR Scan

1N4607

Abstract: 100-C COMPUTER DIODE High Conductance 1N4452, 1N4607 FEATURES â'¢ Metallurgical Bond â'¢ Planar , Range . 1N4452 1N4607 . 40V . 85V . . 30V . 50V . . 400mAdc. . 1A. - 65 °C to + 150 °C - 65 °C to + 200 °C MECHANICAL SPECIFICATIONS 1N4452, 1N4607 DO , 1N4452, 1N4607 ELECTRICAL SPECIFICATIONS (at 25"C unless notad) Forward Forward Forward Forward , 1N4452 40V 0.42 0.54 0.51 0.62 0.60 0.71 0.71 0.83 1.0 0.90 1.2 1N4607 85V 0.39 0.50 0.50 0.60
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OCR Scan
100-C

TOSHIBA 1N4607

Abstract: 18A1a TOSHIBA {DIS CR ET E/OPT O} b? DDOTETS Q , 9097250 TOSHIBA ( D I S C R E T E /OPTO) - "J 6 7C 09295 D ,r=- . o ' } - * ? 1N4607 TENTATIVE Silicon E pitaxial.-Planar Type Diode Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak). Forward Current Average Forward Current Surge Current (1 /is) Power Dissipation
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OCR Scan
TOSHIBA 1N4607 18A1a IP100A SC-40

1N4607

Abstract: TL50 Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features La dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8 , Amp mWatts o C µA nSecs Silicon Switching Diode 1N4607 LL4607 LL-35 Glass Package , 1N4607 LL4608 Silicon Switching Diode LL-35 Glass Package Applications Used in general purpose
Microsemi
Original
DO-213AA TL50 diode with PIV 200 LL-34/35

BKC diode do35

Abstract: Silicon Switching Diode 1N4607 1N4150 DO-35 Glass Package Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features Six sigma quality Metallurgically bonded BKC's Sigma BondTM plating for problem free solderability DO-35 Glass Package L e a dD i a. 0. 01 8 0. 02 2 " 0. 4 5 8 0. 5 5 8m m 1.0" 25.4 mm (Min.) Length 0.120-.200" 3.05-5.08- m Dia. 0.06-0.09" m 1 . 5 3 2 . 2 8m m Maximum Ratings Peak
Microsemi
Original
BKC diode do35

TOSHIBA 1N4607

Abstract: 1N4607 TOSHIBA {DISCRETE/OPTO! "t? TDTTBSD DDDTSTS ⡠9097250 TOSHIBA (PISCRETE/OPTO)_i"" ^ 67C 09295 - Silicon Epitaxial.-Planar Type 1N4607 Diode D Vr0}'*? TENTATIVE COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. Unit in nun MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 85 V Reverse Voltage VR 70 V Maximum (Peak). Forward Current IfM 600 mA Average Forward Current Io 200 mA Surge
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OCR Scan

1N408

Abstract: FD100 1N4448 1N4449 1N4531 1N4606 1N4607 1N4610 1N3604 1N4151 FD100 FD600 FDH600 FDN600 1N3063 1N3064 @ @ @
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OCR Scan
N4376 1N916B 1N5317 1N4086 1N408 1n4376 equivalent 1N4148 JANTX 1n916 equivalent DO-7/DO-35 FD700 1N4244 DO-34 1N4305
Abstract: Silicon Switching Diode 1N4607 Applications IDO-35 Glass Package 1 Used in general purpose applications,w here a controlled forward characteristic and fast switching speed are important. Features â'¢ â'¢ â'¢ Six sigm a quality M etallurgical^ bonded BKC's Sigm a Bondâ"¢ plating for problem free solderability Maximum Ratings Symbol Value Peak Inverse Voltage PIV 85 (Min). Volts Average Rectified Current lavg 200 mAmps Continuous Forward Current ^d -
OCR Scan

D035

Abstract: DT230A ) 1N445I 40 50 30 1.00 300 6 10 D035 38 1N4607 85 100 50 1.00 400 4 10 D035 38 1N460B 85 100 50
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OCR Scan
DT230A 1N4830 D0-35 D035 package DT230I9 DT230G 0T230F 1N4156 1N4157

1N4009

Abstract: BKC666 1N4454 75 100 500 1.0 10 100 50 4 1N4607 85 200 500 1.1 400 100 50 10 1N4608 85 200 500 0.96 350 100 50
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OCR Scan
BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N4009 1N41S4 1N463 1N625 1N914 00G0301
Abstract: SW ITCHING D IO D ES 5 00 m W Peak Voltage Pa rt# M inim um Forward Current IF(m *) @ »f W 75 100 50 85 85 85 30 40 70 150 10 10 10 250 400 500 10 100 100 100 @ @ @ @ @ @ @ @ @ @ 1 .1 .81 1.1 1.1 1.1 .85 1.2 1.1 1 60 50 50 40 25 100 200 20 0.1 30 @ @ @ @ @ 1 1 1 .55 1 V M zm 1N4149 1N4531 1N4534 1N4606 1N4607 1N4608 1N4727 1N4861 1N4862 APD3595 M axim um Reverse Current @ 15 0 â'˜ C @ 2 5 -
OCR Scan
1N3147 1N3600 1N3602 1W3605 ALL4152 ALL4153

1N4448-A

Abstract: 1N4532 200 4 1. 1 250 0. 1 50 2. 5 4 24C 1N4607 JB2 85 70 600 200 4 0. 95 250 0. 1 50 4 10 P
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OCR Scan
1N4446 1N4447 1N4532 1N4533 1N4448-A 1N4536 P-500 1S548

SS321 equivalent

Abstract: DIODE 1N9148 10 D035 38 75.36 1N4607 85 100 50 1.00 400 4 10 D035 38 75.44 1N4608 85 100 50 .SB 4C0 4 10
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OCR Scan
MA1703 MA1704 SS321 SS322 SS324 SS325 SS321 equivalent DIODE 1N9148 1N4307 DIODE 1N3605 SE708 2N2222 chip

SS321

Abstract: SE708 10 D035 38 75.36 1N4607 85 100 50 1.00 400 4 10 D035 38 75.44 1N4608 85 100 50 .SB 4C0 4 10
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OCR Scan
SS334 SS337 DZ800 STB568 1N4306 D07 15 HPIXP2350ADT DZ805 DZ806 10CI0

DO-35 PACKAGE

Abstract: DSAIH000251 B K C INTERNATIONAL Diodes for Computer Applications in DO-35 Package I 3 Silicon Switching ! Peak Inverse Voltage (PIV) Max avg. Rectified Current (l0) Max Power Dissipation at254 C ( P J Forward Voltage Drop (VF) Reverse Reeoveiy Time at Ip Reverse Current Or ) a tV p
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OCR Scan
DO-35 PACKAGE DSAIH000251 1N914A 1N914B 1N916 1N916A 1N4148 1N4152

1N4454A

Abstract: IS954 200 4 1. 1 250 0. 1 50 2. 5 4 24C 1N4607 JB2 85 70 600 200 4 0. 95 250 0. 1 50 4 10 P
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OCR Scan
1S954 1S955 1N4454A IS954 IS953 In4536 1S773 1S773A 1S774 1S774A 1S775 1S776

IN5551

Abstract: 1N4148 75v 150mA diode 1N4531, J, JTX, JTXV 1N4532, J, JTX, JTXV 1N4534, J, JTX, JTXV 1N4607 1N4608 1N4727 1N4883-1N4884
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OCR Scan
1N5118-1N5134 IN5550 IN5551 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 1N251 1N456 1N456A 1N457 1N457A 1N458

1N4447-A

Abstract: 1N4448-A 200 4 1. 1 250 0. 1 50 2. 5 4 24C 1N4607 JB2 85 70 600 200 4 0. 95 250 0. 1 50 4 10 P
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OCR Scan
1S953 1N4447-A is805 S45TI 1S776A 1S801 1S802 1S803 1S804 1S805

in4606

Abstract: IN4150 ) 1N445I 40 50 30 1.00 300 6 10 D035 38 1N4607 85 100 50 1.00 400 4 10 D035 38 1N460B 85 100 50
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OCR Scan
in4606 IN4150 1N4I48 1N4453 1N4826 1N4829 1N5179 1IM4450 IN4606

diode A14A

Abstract: A14A ) 1N445I 40 50 30 1.00 300 6 10 D035 38 1N4607 85 100 50 1.00 400 4 10 D035 38 1N460B 85 100 50
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OCR Scan
diode A14A A14A A14P Rectifier A15A diode A115m diode a15a DT230

Germanium diode

Abstract: 5 amp diode rectifiers 1N4496 1N4607 thru 1N4608 1N4624 thru 1N4627 1N4661 thru 1N4662 1N4729A thru 1N4764A 1N4829 1N4830 1N4933
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OCR Scan
Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 1N34A 1N38A 1N60A 1N100A 1N270 1N276
Showing first 20 results.