1N4454 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 50 of about 82 for 1N4454 |
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1N4454 |
APD Semiconductor, Inc. |
Planar Diodes |
66.16 Kb, 1 Pages. |
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1N4454 |
BKC International |
50 V, 500 mW ultra fast low capacitance diode |
37.81 Kb, 1 Pages. |
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1N4454 |
Capar Corp. |
High Speed Switching Diodes |
91.01 Kb, 1 Pages. |
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1N4454 |
Central Semiconductor |
N/A |
62.21 Kb, 1 Pages. |
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1N4454 |
Chenyi Electronics |
SMALL SIGNAL SWITCHING DIODE |
43.44 Kb, 1 Pages. |
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1N4454 |
Crimson Semiconductor |
SILICON DIODES |
33.49 Kb, 1 Pages. |
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1N4454 |
DC Components Co., Ltd. |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
177.84 Kb, 2 Pages. |
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1N4454 |
Diodes, Inc. |
High Voltage Rectifiers / Diodes |
46.6 Kb, 1 Pages. |
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1N4454 |
Diodes, Inc. |
HIGH VOLTAGE RECTIFIERS / SWITCHING DIODES |
45.59 Kb, 1 Pages. |
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1N4454 |
Diodes, Inc. |
Silicon Switching Diode |
47.59 Kb, 1 Pages. |
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1N4454 |
EIC Semiconductor, Inc. |
High Speed Switching Diodes |
29.2 Kb, 2 Pages. |
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1N4454 |
Fairchild Semiconductor |
High Conductance Ultra Fast Diode |
35.13 Kb, 2 Pages. |
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1N4454 |
Fairchild Semiconductor |
High Conductance Ultra Fast Diode |
18.91 Kb, 2 Pages. |
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1N4454 |
Fairchild Semiconductor |
Ultra fast low capacitance diode. Working inverse voltage 50 V. |
327.81 Kb, 10 Pages. |
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1N4454 |
Fairchild Semiconductor |
High Conductance Ultra Fast Diode |
73.08 Kb, 4 Pages. |
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1N4454 |
General Electric |
Semiconductor Data Handbook 1977 |
613.22 Kb, 5 Pages. |
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1N4454 |
General Electric |
Semiconductor Data Book 1971 |
753.17 Kb, 2 Pages. |
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1N4454 |
General Semiconductor, Inc. |
SMALL SIGNAL DIODE |
57.89 Kb, 2 Pages. |
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1N4454 |
GOOD-ARK Electronics |
SILICON EPITAXIAL PLANAR DIODES |
23.61 Kb, 1 Pages. |
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1N4454 |
International Semiconductor, Inc. |
Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin |
123.75 Kb, 1 Pages. |
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1N4454 |
Micro Commercial Components |
DIODE ULTRA FAST RECOVERY RECTIFIER 75V 0.15A 2DO-35 |
117.69 Kb, 3 Pages. |
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1N4454 |
Micro Commercial Components |
400mW 75 Volt Silicon Epitaxial Diode |
108.3 Kb, 3 Pages. |
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1N4454 |
Microsemi Corporation |
Signal or Computer Diode |
29.65 Kb, 2 Pages. |
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1N4454 |
Microsemi Corporation |
Computer Diode General Purpose Switching |
42.21 Kb, 1 Pages. |
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1N4454 |
Microsemi Corporation |
Silicon Switching Diode DO-35 Glass Package |
113.41 Kb, 2 Pages. |
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1N4454 |
N/A |
The Diode Data Book with Package Outlines 1993 |
92.71 Kb, 2 Pages. |
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1N4454 |
National Semiconductor |
Silicon Single Junction Diodes |
108.21 Kb, 1 Pages. |
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1N4454 |
National Semiconductor |
Computer Diodes |
33.47 Kb, 1 Pages. |
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1N4454 |
National Semiconductor |
Silicon Single Junction Diodes |
107.72 Kb, 1 Pages. |
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1N4454 |
National Semiconductor |
High Conductance Ultra Fast Diode |
38.03 Kb, 2 Pages. |
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1N4454 |
Rectron Semiconductor |
SIGNAL DIODE |
11.71 Kb, 1 Pages. |
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1N4454 |
RFE International, Inc. |
Power Rectifier-Bidge and High Voltage Zener |
259.19 Kb, 4 Pages. |
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1N4454 |
ROHM Electronics |
Switching Diodes |
157.4 Kb, 2 Pages. |
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1N4454 |
Semiconductors, Inc. |
Silicon Switching Diodes, DO-35 Package |
111.45 Kb, 1 Pages. |
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1N4454 |
Semitronics Corp. |
Silicon Diodes |
211.74 Kb, 4 Pages. |
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1N4454 |
Semtech |
SILICON EPITAXIAL PLANAR DIODE |
86.57 Kb, 1 Pages. |
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1N4454 |
SynSemi Semiconductor |
50 V, 500 mW ultra fast low capacitance diode |
138.39 Kb, 1 Pages. |
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1N4454 |
Taitron Components |
Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin |
15.18 Kb, 1 Pages. |
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1N4454 |
Texas Instruments |
Discrete Devices 1978 |
71.85 Kb, 1 Pages. |
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1N4454 |
Thomson-CSF |
Condensed Data Book 1977 |
38.11 Kb, 1 Pages. |
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1N4454 |
Thomson-CSF |
Shortform Semiconductor Catalogue 1982 |
162.98 Kb, 1 Pages. |
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1N4454 |
Vishay |
SILICON SWITCHING DIODE |
50.74 Kb, 1 Pages. |
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1N4454 |
N/A |
Shortform Data and Cross References (Misc Datasheets) |
35.18 Kb, 1 Pages. |
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1N4454 |
N/A |
Shortform Electronic Component Datasheets |
36.46 Kb, 1 Pages. |
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1N4454 |
N/A |
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
73.23 Kb, 1 Pages. |
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1N4454 |
N/A |
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
59.58 Kb, 1 Pages. |
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1N4454 |
Motorola |
Motorola Semiconductor Datasheet Library |
117.09 Kb, 1 Pages. |
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1N4454-1 |
BKC International |
Silicon Switching Diode |
64.76 Kb, 1 Pages. |
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1N4454-1 |
Microsemi Corporation |
Signal or Computer Diode |
29.65 Kb, 2 Pages. |
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1N4454-1 |
Microsemi Corporation |
Computer Diode General Purpose Switching |
42.21 Kb, 1 Pages. |
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Datasheets per page: 50 | 250 | 500 |
| Fulltext Datasheet Results |
1 - 50 of about 159 for 1N4454 |
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First line: 1N4148.1N4448 1n4148 die chip 1n4148 die 1N4148.1N4448* DIODE CHIP 1N4148 CPD63 High Speed Chip Abstract: .. PRINCIPAL DEVICE TYPES CMPD914 CMPD914 CMPD4448 CMPD4448 1N914 1N914 1N914B 1N914B 1N4148 1N4148 1N4448 1N4448 1N4154 1N4154 1N4454. Process EPITAXIAL PLANAR. Die Size 11 x 11 MILS. Die Thickness 11 MILS. Anode Bonding pad Area 3.3 x 3.3 MILS. Top Side .. Tags: DIODE CHIP 1N4148 diode 1N4148 datasheets diode 1n4148 CMPD914 1N914B 1N914 transistor data sheet free download 1n914 equivalent 1n4454 1n4448 die chip 1N4148.1N4448* 1N4148 diode data sheet 1n4148 die chip CPD63 |
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First line: CPD83V High Speed Chip Abstract: .. PRINCIPAL DEVICE TYPES CMPD914 CMPD914 CMPD4448 CMPD4448 1N914 1N914 1N914B 1N914B 1N4148 1N4148 1N4448 1N4448 1N4154 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD2838 CMPD7000 CMPD7000 . Process EPITAXIAL PLANAR. Die Size 11 x 11 MILS. Die Thickness 7.1 MILS. Anode Bonding .. Tags: diode 1N4148 datasheets diode 1n4148 CMPD914 cmpd7000 1N914 transistor data sheet free download 1N4454 1n4448 die chip 1N4154 1N4148.1N4448* 1n4148 die chip 1n4148 die CPD83V |
70.13 Kb |
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First line: 14454 14454 Abstract: .. 1N4454. Discrete POWER & Signal Technologies. DO-35 DO-35 . High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings* TA = 25 °C unless otherwise noted. *These ratings are limiting .. Tags: 650 DIODE 1N4454 1N4454 |
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First line: diode in3064 in4454* in4454 IN3064 COMPUTER JANTX1N3064 uwlv,ru viyjvk* 1n4454; jan, jantx jantxv 1n4454 General Purpose jan, jantx jantxv 1n4454-1 Switching 1n4532; jan, jantx jantxv 1n4532 ABSOLUTE MAXIMUM RATINGS, Reverse Breakdown Voltage .70V Peak Working Voltage.50V Average Output Current, 1N3 Abstract: .. COMPUTER D ODE JAN & JANTX1N3064 JANTX1N3064 uwlv,ru 1 trv viyjvk* 1n4454; jan, jantx & jantxv 1n4454 General Purpose jan, jantx & jantxv 1n4454-1 Switching 1n4532 1n4532 ; jan, jantx & jantxv 1n4532 1n4532 ABSOLUTE MAXIMUM .. Tags: IN3064 in4454 in4454* diode in3064 datasheet abstract.. |
60.38 Kb |
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First line: &'& Abstract: .. 1N4454. www.cnelectr .com. -. ! 2. 4" 4"versus. 56&0+’% 0+ 0+ ’ ’ 2 -. -. ’ -. 0+ #+ * ,45 versus. .+ °. -. ’ 5. - ’ 2 .. 1N4454. www.cnelectr.com .. Tags: datasheet abstract.. |
99.83 Kb |
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First line: &'& Abstract: .. 1N4454 M C C. www.mccsemi.com. Revision: 3 2002/12/31. -. ! 2. 4" 4"versus. 56&0+’% 0+ 0+ ’ ’ 2 -. -. ’ -. 0 .. 1N4454 M C C. www.mccsemi.com. Revision: 3 2002/12/31 .. Tags: datasheet abstract.. |
117.69 Kb |
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First line: &'& Abstract: .. 1N4454. www.mccsemi.com. M C C. -. ! 2. 4" 4"versus. 56&0+’% 0+ 0+ ’ ’ 2 -. -. ’ -. 0+ #+ * ,45 versus. .+ °. -. ’ 5. - .. 1N4454. www.mccsemi.com. M C C .. Tags: datasheet abstract.. |
108.3 Kb |
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First line: Semiconductor Corp. Adams Avenue Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 Abstract: .. Tel: 631 435-1110 †¢ Fax: 631 435-1824 www.centralsemi.com 1N4454. central semiconductor corp. cantral semiconductor Corp. T \< SILICON SWITCHING DIODE. JEDEC 00-35 CASE. 145 Adams Avenue .. Tags: datasheet abstract.. |
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First line: 1N4148.1N4448*Â 1N4148 chip CPD83V High Speed Chip Abstract: .. PRINCIPAL DEVICE TYPES CMPD914 CMPD914 CMPD4448 CMPD4448 1N914 1N914 1N914B 1N914B 1N4148 1N4148 1N4448 1N4448 1N4154 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD2838 CMPD7000 CMPD7000 . Geometry. PROCESS DETAILS. R3 5-September 2008 Process EPITAXIAL PLANAR. Die Size .. Tags: 1N4148.1N4448*Â DIODE 1N4148 1n4448 die chip 1n4154 1N4148.1N4448* 1n4148 die chip 1N4148 chip 1N4148 CPD83V |
258.31 Kb |
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First line: in4454 1N4454 IN4454-1 AVAILABLE JAN, JANTX, JANTXV MIL-PRF-19500/144 SWITCHING DIODE HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 1N4454 1N4454-1 Junction Temperature: -55°C +175°C Storage Temperature: -55°C +175°C Operating Current: +25°C Derating Factor: Abstract: .. • 1N4454 and IN4454-1 IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV. PER MIL-PRF-19500 MIL-PRF-19500 /144. • SWITCHING DIODE. • HERMETICALLY SEALED. • METALLURGICALLY BONDED. • DOUBLE PLUG CONSTRUCTION. IN4454 IN4454 and 1N4454 .. Tags: MIL-S-19500 JANTX 1N4454-1 in4454 1N4454 1N4454-1 |
29.65 Kb |
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First line: 1N4454 1N4454 DO-35 Abstract: .. 1N4454. DO-35 DO-35 . High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25 °C unless otherwise noted. *These ratings are .. Tags: mmbd1201 1N4454 |
18.91 Kb |
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First line: 1N4148.1N4448*Â DIODE CHIP 1N4148 CPD63 Abstract: .. PRINCIPAL DEVICE TYPES CMPD914 CMPD914 CMPD4448 CMPD4448 1N914 1N914 1N914B 1N914B 1N4148 1N4148 1N4448 1N4448 1N4154 1N4154 1N4454. Process EPITAXIAL PLANAR. Die Size 11 x 11 MILS. Die Thickness 11 MILS. Anode Bonding pad Area 3.3 x 3.3 MILS. Top Side .. Tags: DIODE CHIP 1N4148 1N4148.1N4448*Â DIODE 1N4148 CPD63 1n4448 die chip 1N4148.1N4448* 1n4148 die chip 1N4148 CPD63 |
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First line: CPD83V High Speed Chip Abstract: .. 1N4454. CMPD2836 CMPD2836 . CMPD2838 CMPD2838 . CMPD7000 CMPD7000 . GROSS DIE PER 5 INCH WAFER 137,880. PROCESS CPD83V CPD83V Switching .. Tags: CPD83V |
420.79 Kb |
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First line: 1N4454 SILICON SWITCHING DIODE Features High Reliability High Conductance General Purpose Switching pplications vailable Surface Mount Version (LL4454) Abstract: .. Characteristic Symbol 1N4454 Unit. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage. VRRM VRWM VR. 75 V. Forward Continuous Current Note 1 IFM 300 mA. Average Rectified .. Tags: 1N4454 |
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First line: COMPUTER DIODE General Purpose Switching JANTX 1N3064 JAN, JANTX JANTXV 1N4454 JAN, JANTX JANTXV 1N4454-1 Metallurgical Bond Qualified MIL-S-19500/144 Planar Passivated Chip DO-7 DO-35 Package Non-JAN Available Abstract: .. COMPUTER DIODE General Purpose Switching JAN & JANTX 1N3064 1N3064 JAN, JANTX & JANTXV 1N4454 JAN, JANTX & JANTXV 1N4454-1 FEATURES †¢ Metallurgical Bond †¢ Qualified to MIL-S-19500 MIL-S-19500 /144 †¢ Planar .. Tags: datasheet abstract.. |
77.27 Kb |
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First line: CPD83V Abstract: .. PRINCIPAL DEVICE TYPES CMPD914 CMPD914 CMPD4448 CMPD4448 1N914 1N914 1N914B 1N914B 1N4148 1N4148 1N4448 1N4448 1N4154 1N4154 1N4454 CMPD2836 CMPD2836 CMPD2838 CMPD2838 CMPD7000 CMPD7000 . PROCESS DETAILS. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax .. Tags: datasheets diode 1n4148 1n4448 die chip 1N4148.1N4448* datasheet abstract.. |
245.17 Kb |
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First line: 1N4454 1N4454 SIGNAL DIODE Abstract: .. 1N4454 SIGNAL DIODE. Absolute Maximum Ratings Ta=25 °C Items Symbol Ratings Unit. Reverse Voltage VR 75 V. Reverse Recovery Time trr 4 ns. Power Dissipation 3.33mW 33mW / °C 25 °C P 400 mW. Forward Current .. Tags: 1n4454 stud 1N4454 |
11.71 Kb |
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First line: 5YM5EMI SEMICONDUCTOR_ 1N4454 Axial eaded Pack 1N4454M Axial eaded Pack LL4454 LL-34 Surface Mount Package Device Electrical Characteristics unless otherwise noted. Symbol Parameter Test Condition Limits Unit Breakdown Voltage Ip=5.0|jA Volts Reverse Leakage Current Vr=50V Abstract: .. CSVJ^ÇMI^ 5YM5EMI SEMICONDUCTOR_ 1N4454 - DO -35 Axial -I eaded Pack age 1N4454M - DO -34 Axial -I eaded Pack age LL4454 LL4454 - LL-34 LL-34 Surface Mount Package Device Electrical Characteristics ta = 25 .. Tags: datasheet abstract.. |
156.88 Kb |
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First line: vUSS _1N4454 LITEMZI POWER SEMICONDUCTOR High Reliability High Conductance General Purpose Switching Applications Abstract: .. in mm Maximum Ratings @ ta = 25Â °C unless otherwise specified Characteristic Symbol 1N4454 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Vrrm Vrwm Vr .. Tags: datasheet abstract.. |
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First line: Silicon Switching Diode Series 1N4454 1N4454-1 Features Available JAN, JANTX, JANTXV MIL-PRF-19500/144 Metallurgically Bonded Hermetically Sealed Double Plug Construction Maximum Ratings 25°C Abstract: .. 1. Revision Date: 12/7/2009 New Product. Silicon Switching Diode Series 1N4454 and 1N4454-1. Maximum Ratings @ 25 °C. Operating & Storage Temperature: -55 °C to +175 °C. Operating Current: 200mA 200mA , TA .. Tags: 1N4454 1N4454-1 |
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First line: Discrete POWER Signal National Technologies Seiconductor'" 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced Process Absolute Maxiu Ratings* unless otherwise noted Abstract: .. m 9 Discrete POWER & Signal National Technologies Semiconductor'" 1N4454 DO-35 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings* TA = 25Â °C unless otherwise .. Tags: datasheet abstract.. |
51.37 Kb |
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First line: 1N4454 O-35 25.40 4.00 Abstract: .. 1N4454 SILICON SWITCHING DIODE T D J_ c DO-35 DO-35 Dim Min Max A 25.40  B  4.00 C  0.60 D  2.00 All Dimensions in mm VISHAY /LITEMSI' f POWERSEMICONDUCTOR / Features High Reliability High Conductance .. Tags: datasheet abstract.. |
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First line: oijctor 1N4454 Do-35 High Conductance Ultra Fast Diode Sourced from Process MMBD1201-1205 characteristics. Absolute Maximum Ratings* unless otherwise noted Symbol Parameter Value Units Abstract: .. jfeÄ^ßS^ I HiO à ̄â€â€l I ^  ¡o GSM oijctor Discrete POWER & Signal Technologies 1N4454 Do-35 Do-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 MMBD1201-1205 for characteristics .. Tags: datasheet abstract.. |
53.67 Kb |
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First line: 1S1555*Â 1S1555 1S2471 1S2473 1S2473 equivalent BAV17-BAV21 BAW75-BAW76 2CK70-2CK79 2CK80-2CK85 1S1553-1S1555 1S2471-1S2473 10-280 10-300 130-110 25-250V 35-75V 20-60V 20-60V 70-35V 90-40V DO-35 DO-35 1N4148 1N4149-1N4154 1N4446-1N4454 1N914 100V 35-100V 40-100V 100V DO-35 DO-35 DO-35 DO-35 3-10 DO- Abstract: .. 3 1N4446-1N4454 150 40-100V 40-100V 1-4 DO-35 DO-35 4 1N914 1N914 75 100V 100V 4 DO-35 DO-35 5 BAV17-BAV21 BAV17-BAV21 250 25-250V 25-250V 50 DO-35 DO-35 6 BAW75-BAW76 BAW75-BAW76 300 35-75V 35-75V 4 DO-35 DO-35 7 2CK70-2CK79 2CK70-2CK79 10 .. Tags: 1S1555*Â BAW76 1S2473 equivalent 1S2473* 1S2471 equivalent 1S2471* 1S1555* 1S1553 1N4454* 1N4148 1N4149-1N4154 1N4446-1N4454 1N914 |
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First line: 1N4454 Used genera! purpose applications, where performance andswitching DO-35 Glass Package plating fbrproblernfree solderability U-34/35 MELFSMD available Full approval Mil-S-195007144 Available JANTXV-i levels level screening available Source Control Drawings Maximum Ratings Symbol Value Unit Pea Abstract: .. Silicon Switching Diode. 1N4454 Applications Used in genera! purpose applications, where performance andswitching Features DO-35 DO-35 Glass Package ; pKC'sSigfà a Bondâ„ ¢ plating . fbrproblernfree .. Tags: datasheet abstract.. |
83.26 Kb |
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First line: Diode 1N4008 1N4008 1N4008 diode 1N4548 BAX15 Diode Cross-Reference Guide Recommended Fairchild Device Abstract: .. 1N4447 1N4447 1N4448 1N4448 1N3070 1N3070 1N3070 1N3070 1N4448 1N4448 1N4448 1N4448 1N4448 1N4448 1N4148 1N4148 1N4148 1N4148 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4148 1N4148 1N4454 1N4454 1N4448 1N4448 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N3070 1N3070 1N3070 1N3070 1N4148 1N4148 1N4148 1N4148 .. Tags: BAX15 1N4548 1N4008 diode 1N4008 Diode 1N4008 you by my side U1899* u1898 cross U1898 U1897 tn6725 TN4037* TN3725 TMPTA06 TMPT5401 TMPT4403 datasheet abstract.. |
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First line: fh1100* FH1100 FAIRCHILD MILITARY QUALIFIED SMALL SIGNAL (NUMERIC LISTING) (Cont'd) GLASS PACKAGE DEVICE Package Item 1N3600JANTXV DO-7 1N4148JAN DO-35 1N4148JANTX DO-35 Abstract: .. 50 1.0 10 2.0 4.0 DO-35 DO-35 18 1N4454JANTXV 75 100 50 1.0 10 2.0 4.0 DO-35 DO-35 19 1N4454-1 JAN 75 100 50 1.0 10 2.0 4.0 DO-35 DO-35 20 1N4454-1 JANTX 75 100 50 1.0 10 2.0 4.0 DO-35 DO-35 21 1N4454-1 JANTXV 75 100 50 1.0 10 2.0 4 .. Tags: FH1100 fh1100* datasheet abstract.. |
55.71 Kb |
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First line: INTERNATIONAL ULTRA FAST CAPACITANCE DIODES 1171103 1N3064 1N4305 1N4454 (MIN) Abstract: .. FAST LOW CAPACITANCE DIODES â– ¡ BE D J 1171103 â– ¡Ã¢â€“ ¡Ã¢â€“ ¡QEÛD b T-Ãâ€3- av 1N3064 1N3064 1N4305 1N4305 1N4454 ABSOLUTE MAXIMUM RATINGS †¢ Tm 4.0 ns @ lF = 10 mA, lH = 10 mA, V„ = 1.0 V †¢ B„ 75 V MIN †¢C 2.0 pF .. Tags: datasheet abstract.. |
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First line: Discrete POWER Signal National Technologies Semiconductor" 1N4454 DO-35 High Conducnce Ultra Fast Diode Sourced from Process MMBD1201-1205 characteristics. Abstract: .. in TT ta Discrete POWER & Signal National Technologies Semiconductor" 1N4454 DO-35 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 MMBD1201-1205 for characteristics. Absolute .. Tags: datasheet abstract.. |
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First line: *102 diode 1N4454 Reverse Voltage 100V Forward Current 150mA DO-204AH (DO-35 Glass) Abstract: .. 1N4454. Small Signal Diode Reverse Voltage 100V 100V Forward Current 150mA 150mA . Features • Silicon Epitaxial Planar Diode • Fast switching diode. Mechanical Data Case: DO-35 DO-35 Glass Case Weight: approx. .. Tags: *102 diode 1N4454 |
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First line: 1N4454 High switching speed: max. General application Continuous reverse voltage:max. peak reverse voltage:max. RoHS Free Abstract: .. 1N4454 HIGH SPEED SWITCHING DIODE. FEATURES : • High switching speed: max. 4 ns. • General application • Continuous reverse voltage:max. 75 V • peak reverse voltage:max. 100 V • Pb / RoHS Free. MECHANICAL .. Tags: 1N4454 |
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First line: 4026 datasheet 1N4454, 1N4454-1 DO-35 Glass Package Abstract: .. Silicon Switching Diode DO-35 DO-35 Glass Package 1N4454, 1N4454-1. Features Six sigma quality Metallurgically bonded BKC's Sigma Bond TM plating for problem free solderability LL-34 LL-34 /35 MELF SMD .. Tags: 4026 datasheet 4026 1N4454 1N4454-1 |
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First line: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES general purpose switching types 1N4149, 1N4447 1N4449 also available glass case DO-34. Peak reverse voltage Abstract: .. 1N4454. SILICON EPITAXIAL PLANAR DIODES for general purpose and switching. The types 1N4149 1N4149 , 1N4447 1N4447 and 1N4449 1N4449 are. also available in glass case DO-34 DO-34 . Peak reverse voltage. Max. aver. rectified .. Tags: 1N4453 1N4447 1N914 1N4454 1N4149 1N4447 1N4449 |
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First line: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES general purpose switching types 1N4149, 1N4447 1N4449 also available glass case DO-34. Peak reverse voltage Abstract: .. 1N4454. SILICON EPITAXIAL PLANAR DIODES for general purpose and switching. The types 1N4149 1N4149 , 1N4447 1N4447 and 1N4449 1N4449 are. also available in glass case DO-34 DO-34 . Peak reverse voltage. Max. aver. rectified .. Tags: 1N4453 1N4447 1n4149 1N914 1N4454 1N4149 1N4447 1N4449 |
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First line: 1N4149.1N4454 General Purpose Switching Max. Abstract: .. 1N4454. SILICON EPITAXIAL PLANAR DIODES. for General Purpose and Switching. Absolute Maximum Ratings and Characteristics Ta = 25 OC unless otherwise specified. Peak Reverse Voltage. Max .. Tags: 1N4453 1N4152 1N4149 1N4454 |
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First line: 1N4149.1N4454 general purpose switching Max. Abstract: .. 1N4454. SILICON EPITAXIAL PLANAR DIODES. for general purpose and switching. Absolute Maximum Ratings and Characteristics Ta = 25 OC unless otherwise specified. Peak Reverse Voltage. Max .. Tags: J 1N4149 1N4453 1N4447 1N4149 1N4454 |
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First line: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES general purpose switching types 1N4149, 1N4447 1N4449 also available glass case DO-34. Peak reverse voltage Abstract: .. 1N4454. SILICON EPITAXIAL PLANAR DIODES for general purpose and switching. The types 1N4149 1N4149 , 1N4447 1N4447 and 1N4449 1N4449 are. also available in glass case DO-34 DO-34 . Peak reverse voltage. Max. aver. rectified .. Tags: 1N4453 1N4451 1N914 1N4454 1N4149 1N4447 1N4449 |
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First line: Silicon epitaxial planar diode Fast swithching diodes 1N4149, 1N4447, 1N4449 also avaible glass case DO-34 1N914 THRU 1N4454 Abstract: .. CE 1N914 1N914 THRU 1N4454. CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE. FEATURES . Silicon epitaxial planar diode. . Fast swithching diodes. . 1N4149 1N4149 , 1N4447 1N4447 , 1N4449 1N4449 are also. avaible in glass case .. Tags: 1N4453 1N4149 1N4447 1N4449 1N914 1N4454 |
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First line: SPECS G000125 QD343E5 TlNCH POUND MIL-S-19500/144H November 1993 SUPERSEDING MIL-S-19500/144G April 1984 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3064, 1N4454, 1N4454-1, 1N4532, 1N4454UR-1 JAN, JANTX, JANTXV documentation process conversion measures necessary co Abstract: .. DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3064 1N3064 , 1N4454, 1N4454-1, 1N4532 1N4532 , AND 1N4454UR-1 JAN, JANTX, AND JANTXV The documentation and process conversion measures necessary to comply with .. Tags: datasheet abstract.. |
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First line: 1N3065 Silicon Diodes DO-35 Case TYPE Vrrm (mA) (mA) (ns) (PF) 1N914 1N914B 1N3062 Abstract: .. 1N4447 1N4447 100 150 1.0 20 4.0 2.0 1N4448 1N4448 100 150 1.0 100 4.0 4.0 1N4449 1N4449 100 150 1.0 30 4.0 2.0 1N4454 75 150 1.0 10 2.0 2.0 1N4863 1N4863 50 200 1.2 100 7.0 2.0 1N4864 1N4864 80 200 1.1 100 9.0 1.3 High Voltage Switching Diodes .. Tags: 1N3065 datasheet abstract.. |
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First line: 1N914 THRU 1N4454 Silicon Epitaxial Planar Diodes general purpose switching types 1N4149, 1N4447 1N4449 also available glass case DO-34. Abstract: .. 1N914 1N914 THRU 1N4454. SILICON EPITAXIAL PLANAR DIODES. Silicon Epitaxial Planar Diodes for general purpose and switching. The types 1N4149 1N4149 , 1N4447 1N4447 and 1N4449 1N4449 are also available in glass case DO-34 DO-34 .. Tags: 1N4453 1N914 1N4454 1N4149 1N4447 1N4449 |
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First line: datasheets diode 1n3064 1N3062 1N4151 equivalent Silicon Diodes DO-35 Case TYPE VRRM (mA) 0.85 0.88 0.88 0.88 (mA) (ns) (pF) 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 Abstract: .. 1N4454 75 150 1.0 10 2.0 2.0. 1N4863 1N4863 50 200 1.2 100 7.0 2.0. 1N4864 1N4864 80 200 1.1 100 9.0 1.3. TYPE NO. VRRM IO VF @ IF trr CT. V mA V mA ns pF MAX MAX MAX MAX. 1N3070 1N3070 200 200 1.0 100 50 5.0. CSSD2003 CSSD2003 250 250 .. Tags: 1N4151 equivalent datasheets diode 1n3064 1N914B 1N4447 1N44* 1N3062 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 |
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First line: at-614 DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE 3990 COLUMBUS, 43218-3990 REPLY REFER DSCC-VQ (VQE-1 o-019452/Mr. Deslich/614-692-0593/bpd) Abstract: .. *1N4454-1 *1 N4454U N4454U R-1 *1N3064 1N3064 *1N4532 1N4532 . *1N4150-1 1N4150-1 *1 N4150UR-1 N4150UR-1 *1N3600 1N3600 . ESD Class 3A. Manufacturer Designation. CHRC. Test Report Reference 19500-2767-10. Prf. Spec /116. /144. /231. Manufacturer .. Tags: at-614 VQE-1 |
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First line: 1N914/1N4148*Â 1N914 CJ 4148 1N914/1N4148* CJ 4148 CJ 4148 1N914 4148 4454 Abstract: .. SYMBOL 1N914 1N914 1N4148 1N4148 1N4150 1N4150 1N4151 1N4151 1N4154 1N4154 1N4448 1N4448 1N4454 UNITS. Maximum Recurrent Peak Reverse Voltage VRRM 100 100 50 75 35 100 75 V. Maximum Average Rectified Current Io 75 150 200 150 150 150 150 mA .. Tags: 1N914/1N4148*Â DO-35 silicon Rectifier diodes diode 4148 CJ 4148 1N914B 1N914/1N4148* 1N914 transistor data sheet free download 1N914 CJ 4148 1N914 |
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First line: 69105 APAR COMPONENTS CORP Jiaa^lOS APAR 00300 CORP. High Speed Switching Diodes Series 1N4148-1N4154 Fsatures Abstract: .. 1N4148 1N4148 1N914 1N914 100 75 450 150 200 2 500 1N4154 1N4154 35 25 450 150 200 2 500 1N4454 1N3064 1N3064 75 50 450 150 200 2 500 NOTES: Tj: 200Â °C Topr: -65~200Â °C Tstg: -65~200Â °C Electrical Characteristics Ta = 25Â °C .. Tags: lN4148* N4148 1N4148-1N4154 datasheet abstract.. |
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First line: FAIRCHILD SEMICONDUCTOR DE^m^t^M FAIRCHILD Schlumberger Company 3469674 FAIRCHILD SEMICONDUCTOR 27484 1N3064/4305/4454 LL3064/4305/4454 Ultra Fast Capacitance Diodes .2.0 trr. .4.0 Abstract: .. Current Pulse Width = 1.0 s 1.0 A Pulse Width = 1,0 ms 4.0 A PACKAGES 1N3064 1N3064 1N4305 1N4305 1N4454 FDLL3064 FDLL3064 FDLL4305 FDLL4305 FDLL4454 FDLL4454 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 If you need this device in the SOT package, an .. Tags: datasheet abstract.. |
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First line: MELF DIODE multiple color bands documentation process conversion measures necessary comply with this revision shall completed January 2011. INCH-POUND MIL-PRF-19500/144N w/AMENDMENT October 2010 SUPERSEDING MIL-PRF-19500/144N w/AMENDMENT January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEV Abstract: .. SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4454-1, 1N4454UR-1, 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD, 1N3064 1N3064 , 1N4532 1N4532 , JAN, JANTX, AND JANTXV. This specification is .. Tags: MELF DIODE multiple color bands 1N4454-1 1N4454UR-1 1N4454UB 1N4454UBCA 1N4454UBCC 1N4454UBD 1N3064 1N4532 |
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First line: CP191V-2N2222A-WN Notification Date: December 2010 Product Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent Change: Wafer diameter been changed from Reason Change: Process transfer from wafer foundry wafer foundry. Effect Change: This change does affect physic Abstract: .. -WN CPD83V-1N4148-WN CPD83V-1N4148-WN CP310-MJE3439-WN CP310-MJE3439-WN CPD83V-1N4448-WN CPD83V-1N4448-WN CP310-2N3440-WN CP310-2N3440-WN CPD83V-1N4454-WN CP310-CMPTA44-WS CP310-CMPTA44-WS . CPD83V-1N914-WN CPD83V-1N914-WN CP314V-MPS651-WR CP314V-MPS651-WR CPD83V-1N914A-WN CPD83V-1N914A-WN CP316V-2N5551-WN CP316V-2N5551-WN .. Tags: CP191V-2N2222A-WN datasheet abstract.. |
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First line: D035 1n4148 D035 IN3070* LN4148 diode SSmOTb 0DDD353 2514096 CRIMSON SEMICONDUCTOR 00353 T'<>3'0J SILICON DIODES Clsa P.I.V. Volts Min. Forward Currint Reversa Current Ra-varsa Voltaga Maximum Ravers* Currant Tamp, Cap. Ra-cov. Tims Powar Dissipation fiA. 1N916 D035 .025 1N916A 0035 .025 1N916 Abstract: .. 025 20 50 150 2 4 500 1N4450 1N4450 DO 35 40 200 †¢OSO 30 50 150 4 4 500 1N4454 0035 75 10 1 50 100 150 2 4 500 62 This Material Copyrighted By Its Respective Manufacturer 99. DE 12514096 0000353 2. T ~=~ __ _ _ _ _ __ .. Tags: LN4148 diode IN3070* 1n4148 D035 D035 datasheet abstract.. |
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First line: Computer Diodes (Glass Package) (continued) Device Package ^RRM (nA) <pF) (ns) Test Cond. Process 1N4244 DO-7 0.75 (Note 1N4305 DO-35 0.505 0.575 0.25 0.55 0.65 0.61 0,71 0.85 (Note (Note 1N4446 DO-35 (Note 1N4447 DO-35 (Note 1N4448 DO-35 (Note 1N4454 DO-35 (Note 1N5282 DO-35 0.45 0.49 0.55 0.67 Abstract: .. DO-35 DO-35 100 25 20 1 20 4 4 Note 2 D3 1N4448 1N4448 DO-35 DO-35 100 25 20 1 100 2 4 Note 2 D3 1N4454 DO-35 DO-35 75 100 50 1 10 2 4 Note 1 D3 1N5282 1N5282 DO-35 DO-35 80 100 55 0.45 0.49 0.1 0.55 0.6 1 0.67 0.725 10 0.8 0.9 100 0.92 1.1 300 1.05 .. Tags: datasheet abstract.. |
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