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1N4454 Datasheet

Part Manufacturer Description PDF Type
1N4454 Chenyi Electronics SMALL SIGNAL SWITCHING DIODE Original
1N4454 DC Components TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES Original
1N4454 Diodes Silicon Switching Diode Original
1N4454 EIC Semiconductor High Speed Switching Diodes Original
1N4454 Fairchild Semiconductor High Conductance Ultra Fast Diode Original
1N4454 Fairchild Semiconductor High Conductance Ultra Fast Diode Original
1N4454 General Semiconductor SMALL SIGNAL DIODE Original
1N4454 Good-Ark SILICON EPITAXIAL PLANAR DIODES Original
1N4454 Micro Commercial Components DIODE ULTRA FAST RECOVERY RECTIFIER 75V 0.15A 2DO-35 Original
1N4454 Micro Commercial Components 400mW 75 Volt Silicon Epitaxial Diode Original
1N4454 Microsemi Silicon Switching Diode DO-35 Glass Package Original
1N4454 Microsemi Signal or Computer Diode Original
1N4454 Rectron Semiconductor SIGNAL DIODE Original
1N4454 Taitron Components Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin Original
1N4454 APD Semiconductor Planar Diodes Scan
1N4454 BKC International 50 V, 500 mW ultra fast low capacitance diode Scan
1N4454 Capar High Speed Switching Diodes Scan
1N4454 Central Semiconductor Scan
1N4454 Crimson Semiconductor SILICON DIODES Scan
1N4454 Diodes High Voltage Rectifiers / Diodes Scan
Showing first 20 results.

1N4454

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DO-35 1N4454 MECHANICAL SPECIFICATIONS J & JTX 1N3064 J. JTX & JTXV 1N4454 & 1N4454-1 J, JTX & , , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 U IK J U L . General Purpose , . 75mA 1N4532 , . 0.5A 1A , 1N4454-1 1N4532 Reverse Current @ is o ' c Reverse Current @ 25°C Reverse Breakdown -
OCR Scan
MIL-S-19500/144 DO-34 100//A 1N4S32

1N4454

Abstract: MMBD1201-1205 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted , , Junction to Ambient ©1997 Fairchild Semiconductor Corporation Max Units 1N4454 500 3.33 300 mW mW/°C °C/W 1N4454 Discrete POWER & Signal Technologies (continued) Electrical , pF 4.0 nS 1N4454 High Conductance Ultra Fast Diode Fairchild Semiconductor
Fairchild Semiconductor
Original
ULTRA FAST DIODE
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 1N4454 Availability Buy 1N4454 at our online store ! 1N4454 Information Cate gory » Diodes Class » High -Speed/Fast Recovery Diodes Type » General Purpose 1N4454 Specifications Milita ry/High-R e l : N I(O ) Max .(A) O utput C urre nt : 150m V(R R American Microsemiconductor
Original
Abstract: Discrete POWER & Signal Technologies t _8 i iHAfrltAif Ï ¡p^j. ;S £~!M i O D N P U C ' T O R 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M , e rw ise noted Characteristic Max Units 1N4454 Pd R e jA Total Device Dissipation , c to r C o r p o r a tio n 500 3.33 300 mW m W /°C °C/W 1N4454 iffy (continued , 4.0 4.0 nA uA mV mV mV V PF nS 1N4454 High Conductance Ultra Fast Diode -
OCR Scan
BD1201-1205

1N4454

Abstract: Ultra fast diode 1N4454 Discrete POWER & Signal Technologies N 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 50 V IO Average , °C Thermal Resistance, Junction to Ambient Max Units 1N4454 500 3.33 300 mW mW/°C °C/W , µA mV mV mV V pF 4.0 nS 1N4454 High Conductance Ultra Fast Diode National
National Semiconductor
Original
1N445

1N4548

Abstract: 1N4008 Fairchild Device 1N4447 1N4448 1N3070 1N3070 1N4448 1N4448 1N4448 1N4148 1N4148 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4148 1N4454 1N4454 1N4448 1N4148 1N4148 1N4148 1N4148 1N3070 1N3070 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148 1N5229B 1N4148 1N4448 1N4148 1N4938 1N4938 1N4454 1N4730A 1N4732A Industry Part Number Recommended Fairchild Device Industry Part , 1N4752A 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148
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Original
1N1744A 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N523b 1N100 1N100A 1N101 1N102 1N103 1N104

1N3064

Abstract: 1N4532 RATINGS, AT 25°C JA N N4454; JAN, JANTX && JANTXV 1N4454 jan, ja n tx & ja n tx v 1N4454-1 1N4532; JAN , o o n c < 3pF Forward Recovery Voltage Forward Recovery Time Type 1N3064 1N4454 1N4454-1 1N4532 , 1N3064 J, JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 J, JTX S. JTXV 1N4532 D INCHES A B C D .05 , .50V Average Output Current, 1 N 3 0 6 4 .75mA , . 0.5A 1A 1N4532
-
OCR Scan
JANTX 1N3064

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 Silicon Diodes 1N4154 SEE PAGE 205 r-â'"I 1N4151,2,3 1N4454 1N4532,3,4 This family of , (DHD) 1N4151-1N4153 1N4454 0 022 0 018 M 0.155 " 140 0 180 MAX -1.250 â'" -1 1 1 t 0 075 0060 1 , air Derate: 2.85mW/°C for temp, above 25°C amb. based on max. T, = 200°C FEATURES 1N4151 1N4454 , Forward Surge (1 /¿sec. pulse) Power Dissipation Temperature Operating Storage 1N4454 1N4532 50 , ., source impedance = 10 ohms. 263 I 1N4151, 2, 3 1N4454 1N4532, 3, 4 6,000 [-4,000 1- 1,000 -800
-
OCR Scan
MHD618 1N4152 1N4153 1N4151 equivalent Diode Equivalent 1n4151 Scans-00103068 in4454 1N4532-1N4534 IN4533 IN4534

IN3064

Abstract: in4454 , JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 j, jtx s. jtxv 1n4532 I -Câ'"| inches , General Purpose jan, jantx & jantxv 1n4454-1 Switching 1n4532; jan, jantx & jantxv 1n4532 ABSOLUTE , , 1N3064.75mA 1N4532 .125mA , 1N4532 . 0.5A Operating Temperature Range , 4.96-7.62 C 1.0 MIN - 1.5 MAX. 24.0 MIN.-38.1 MAX, D .018.022 .46-.56 j, jtx t jtxv 1n4454.-1 inches
-
OCR Scan
JANTX1N3064 IN3064 diode in3064 diode 1n4454
Abstract: 1N4454 CT j ES. tI S ^ U9 S I I I 1""4 S ' S S M ÎC O N D Ü O T O H Discrete POW ER & Signal Technologies 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Màximum RâtinÇjS Symbol W IV lo T A = 2 5°C unless o th e rw , above 25°C Thermal Resistance, Junction to Ambient Max 1N4454 500 3.33 300 Units mW m W /°C °C/W -
OCR Scan

1N3064

Abstract: 1N4454 B K C INTERNATIONAL ULTRA FAST LOW CAPACITANCE DIODES â¡ BE D J 1171103 â¡â¡â¡QEÛD b T-Ã"3- av 1N3064 1N4305 1N4454 ABSOLUTE MAXIMUM RATINGS â'¢ Tm 4.0 ns @ lF = 10 mA, lH = 10 mA, Vâ'ž = 1.0 V â'¢ Bâ'ž 75 V (MIN) â'¢C 2.0 pF @ VR = 0, f = 1.0 MHz Temperatures Storage Temperature Range , nA 1N3064, 1N4454 1.0 V lf = 10 mA 1N4305 0.70 0.85 V lf = 10 mA lr Reverse Current 0.1 ha VR , 1N3064, 1N4305, 1N4454 4.0 ns Vâ'ž = 1.0V C Capacitance 2.0 pf Vâ'ž = 0, f = 1.0 MHz RE Rectification
-
OCR Scan

1N4454

Abstract: /1n4454.html 4/12/2010 American Microsemiconductor , 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 1N4454 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum , Manufacturer Partnumber: List Price: Our Price: You Save: 1N4454 $ 0.47 Information Spec Sheets Tutorials
American Microsemiconductor
Original
Abstract: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward , C - 2.0 RE 45 Forward voltage VF 1N3064 1N4454 1N4305 Reverse current Breakdown voltage Reverse recovery time 1N4305 1N3064 1N4305 1N4454 V IF = 2.0mA IF = 1.0mA IF , SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MECHANICAL CHARACTERISTICS Case DO DIGITRON
Original
MIL-PRF-19500

1N4454

Abstract: 1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) T D DO-35 Dim A B C D Min 25.40 - - - Mechanical Data_ Case: D O -35, Plastic Leads: Solderable per M , (Note 1) Operating and Storage Temperature Range @ t < 1.0s @ t = 1 .O^s 1N4454 75 300 150 1.0 2.0 , provided that leads are kept at ambient temperature. DS12016 Rev. E 1 of 1 1N4454
-
OCR Scan
IL-STD-202

1N4454

Abstract: LL4454 1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD , Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol 1N4454 Unit , are kept at ambient temperature. DS12016 Rev. F-2 1 of 1 1N4454 Diodes
Diodes
Original
MIL-STD-202
Abstract: 1N4454 Discrete POWER & Signal Technologies N at ion al Semiconductor 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings* ta=25° ulesohrwentd c n s t e is oe P aram eter S ym bol V alu e Units W iv Working Inverse Voltage 50 V lo Average Rectified Current 200 mA If DC Forward Current 400 mA , nS 1N4454 High Conductance Ultra Fast Diode -
OCR Scan

1N3064

Abstract: in4454 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV , . 75mA 200mA , . 0.5A 1A 1N4532 , = lOmAdc R l= 1000 c< 3 p F Forward Recovery Voltage Forward Recovery Time Type 1N3064 1N4454 1N4454-1 1N4532 Capacitance 2pF ® Vn = OVdc f = 1MHz Vdg * 50mV (pktopk) Forward Voltage l.OVdc ® If
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OCR Scan
JTX1N3064 IN4454-1
Abstract: www.cnelectr.com 1N4454 0+ #+ ' ' , ) / / www.cnelectr .com 1N4454 - 0+ ) #+ 4 " ' ' - - Shanghai Lunsure Electronic
Original
Abstract: SENSITRON SEMICONDUCTOR Data Sheet 4231, Rev. 1N4454-G FAST SWITCHING DIODE Green Products Features ! ! ! ! Fast Switching Speed Glass Package Version for High Reliability A High Conductance , Directive B A D 1N4454-G Mechanical Data ! ! ! ! ! Case: DO-35, MiniMELF Terminals: Plated Leads , Symbol VFM IRM Cj trr Min - - - Max 1.0 100 100 2.0 Unit V nA µA pF ns 1N4454-G FAST SWITCHING , SEMICONDUCTOR Data Sheet 4231, Rev. ­ 1N4454-G FAST SWITCHING DIODE Green Products DISCLAIMER: 1 Sensitron Semiconductor
Original

1N3064

Abstract: 1N4454 - aq 1N3064 1N4305 1N4454 3L .0 0 2 * MRH DIR Temperatures DO-35 PACKAGE Power Dissipation , , 1N4454 1N4305 lR Bv Reverse Current Breakdown Voltage Reverse Recovery Time 1N4305 75 2.0 0.70 0.710 , , 1N4454 C RE AVF/ °c Capacitance Rectification Efficiency Forward Voltage Temperature Coefficient 45
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OCR Scan
DSAIH0002547

1n914 equivalent

Abstract: 1N4009 equivalent Silicon Diodes 1N4154 SEE PAGE 205 r-â'"I 1N4151,2,3 1N4454 1N4532,3,4 This family of , (DHD) 1N4151-1N4153 1N4454 0 022 0 018 M 0.155 " 140 0 180 MAX -1.250 â'" -1 1 1 t 0 075 0060 1 , air Derate: 2.85mW/°C for temp, above 25°C amb. based on max. T, = 200°C FEATURES 1N4151 1N4454 , Forward Surge (1 /¿sec. pulse) Power Dissipation Temperature Operating Storage 1N4454 1N4532 50 , ., source impedance = 10 ohms. 263 I 1N4151, 2, 3 1N4454 1N4532, 3, 4 6,000 [-4,000 1- 1,000 -800
-
OCR Scan
1N5318 1N3067 1N4950 1N814 1n914 equivalent 1N4009 equivalent 1N5319 1N4150 1N4322 FDH600 1N903 1N908

1N4444

Abstract: , SILICON, SWITCHING TYPES 1N3064, 1N4454, 1N4454-1, 1N4532, AND 1N4454UR-1 JAN, JANTX, AND JANTXV The , ) mA mA A IÇ °C/W °C/W 1N3064 75 50 75 1/ 500 2.0 -55 to +175 50 250 1N4454 75 50 200 2/ 1 ,000 , .140 .180 3.56 4.57 1N4454 00 .056 .075 1.42 1.91 3.4 1N4454-1 L 1.000 1.500 25.40 38.10 08 .018 , , 1N4454, and 1N4454-1 and .010 (.25 mm) for 1N4532 from the diode body to the end of the lead. Outside , 1N3064 1N4532 1N4454 and 1N4454-1 I0 = 75 mA dc I0 = 125 mA dc I0 = 200 mA dc IF = 75 mA dc IF = 125 mA
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OCR Scan
1N4444 1N430S 1N3063 150-C

1N4454UR-1

Abstract: 1N3064 COMPUTER D ODE JAN & JANTX1N3064 uwlv,ru 1 trv viyjvk* 1n4454; jan, jantx & jantxv 1n4454 General Purpose jan, jantx & jantxv 1n4454-1 Switching 1n4532; jan, jantx & jantxv 1n4532 ABSOLUTE , 1N3064 1N4454 1N4454 1 1N4532 O.ljjAdc Vr = 50V 100/jAdc @ Vn = 50V 75Vdc @ In = 5/uAde 4ns @ Ir - In , , JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 j, jtx s. jtxv 1n4532 I -Câ'"| inches , .46-,56 DO-34 1N4532 DO-35 1N4454 I- inches millimeters A .078-.107 1.98-2.72 B 195-,300
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OCR Scan
G000125 QD343E5 MIL-S-19500/144H MIL-S-19500/144G MIL-S-19500 D0-213AA

in4151

Abstract: 1N4532 - aq 1N3064 1N4305 1N4454 3L .0 0 2 * MRH DIR Temperatures DO-35 PACKAGE Power Dissipation , , 1N4454 1N4305 lR Bv Reverse Current Breakdown Voltage Reverse Recovery Time 1N4305 75 2.0 0.70 0.710 , , 1N4454 C RE AVF/ °c Capacitance Rectification Efficiency Forward Voltage Temperature Coefficient 45
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OCR Scan
1N914 1N914A 1N914B 1N916 1N916A 1N916B in4151 1N4149 100/1A
Showing first 20 results.