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1N4448TAP Vishay Semiconductors 1N4448 Small Signal Fast Switching Diodes visit Digikey Buy
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1N4448 Atmel Corporation Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35 visit Digikey Buy
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Part : 1N4448 Supplier : Vishay Semiconductors Manufacturer : Allied Electronics & Automation Stock : 48,994 Best Price : $0.0150 Price Each : $0.0190
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1N4448 Datasheet

Part Manufacturer Description PDF Type
1N4448 Central Semiconductor Original
1N4448 Changzhou Galaxy Electrical Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 100V, DO-35, 2-Pin Original
1N4448 Chenyi Electronics SMALL SIGNAL SWITCHING DIODE Original
1N4448 Comchip Technology Fast switching diode. Original
1N4448 Daesan Electronics SMALL SIGNAL SWITCHING DIODES Original
1N4448 DC Components TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES Original
1N4448 Diodes DIODE SWITCHING DIODE 75V 0.15A 2DO-35 Original
1N4448 Diodes FAST SWITCHING DIODE Original
1N4448 Diodes Short Form Selection Guide Original
1N4448 Diotec Small Signal Si-Diodes Original
1N4448 EIC Semiconductor High Speed Switching Diodes Original
1N4448 Fairchild Semiconductor Small Signal Diode Original
1N4448 Fairchild Semiconductor High Conductance Fast Diode Original
1N4448 Fairchild Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SMALL SIG 100V 0.2A DO35 Original
1N4448 FCI Diode, 215mA, 100V, Epitaxial Planar Diode Original
1N4448 Formosa High-speed switching diode Original
1N4448 General Semiconductor Small Signal Diodes Original
1N4448 Good-Ark SILICON EPITAXIAL PLANAR DIODE Original
1N4448 Micro Commercial Components DIODE SWITCHING DIODE 100V 0.15A 2DO-35 Original
1N4448 Micro Commercial Components 500mW 100Volt Switching Diode Original
Showing first 20 results.

1N4448

Catalog Datasheet MFG & Type PDF Document Tags

1N4148

Abstract: DIODE 1N4148ph DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data , . DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. MARKING TYPE NUMBER 1N4148 1N4448 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 1N4148 1N4448 - DESCRIPTION The diodes are type branded. handbook, halfpage k 1N4148; 1N4448 a MAM246 Fig.1 Simplified outline (SOD27; DO-35) and
NXP Semiconductors
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1N4148PH DIODE 1N4148ph 4148ph 1n4148 mtbf 1n4448 diode DIODE 1N4148ph mtbf 4148PH P89LPC901 CCM420 TEA1610 SSL2102

1N4148PH

Abstract: DIODE 1N4148ph DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product specification Philips Semiconductors Product specification High-speed diodes 1N4148; 1N4448 , . · High-speed switching. DESCRIPTION MARKING The 1N4148 and 1N4448 are high-speed switching , -35) packages. TYPE NUMBER MARKING CODE 1N4148 1N4148PH or 4148PH 1N4448 1N4448 ORDERING , package; axial leaded; 2 leads SOD27 1N4448 2 Philips Semiconductors Product specification
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SC-40 SOD-27 SOD27 1n4448 switching diodes 1n4148

1N4548

Abstract: 1N4008 Fairchild Device 1N4447 1N4448 1N3070 1N3070 1N4448 1N4448 1N4448 1N4148 1N4148 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4148 1N4454 1N4454 1N4448 1N4148 1N4148 1N4148 1N4148 1N3070 1N3070 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148 1N5229B 1N4148 1N4448 1N4148 1N4938 1N4938 , 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 FDH444 1N4448 1N4454 1N3070 1N4448 1N4446 1N4448 1N4448 1N4448 FDH444 1N4148 1N4148 1N4148 1N3070 1N3070 1N4448 1N4148 1N4148
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1N1744A 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N523b 1N100 1N100A 1N101 1N102 1N103 1N104

1n4448 itt

Abstract: diode ITT specification ITT SE!1IC0NJ>/ INTERPIETA SOE D 1N4448 «4baa?ii oooaaai aoo â  isi Silicon Epitaxial ,   ISI 1N4448 Characteristics at Tj = 25 °C Symbol Min. Typ. Max Unit Forward Voltage at lF = 5 mA , SEIIICOND/ INTERISTA 50E C 1N4448 4bô5711 0002023 0Ã"3 ISI Forward characteristics mA 10: 1N4448 iF , tot mW 1000 900 800 700 600 500 400 300 200 100 0 1N4448 0 100 200 "C 'amb Dynamic forward resistance versus forward current fi io4 2 IO3 5 2 102 10 1N4448 Tj = 2S°C f =
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1n4448 itt diode ITT specification Color code diode DO-35 diode 1N4448 150D D1N4448 DO-34 100X-

DIODE 1N4148ph

Abstract: DISCRETE SEMICONDUCTORS DAT M3D176 1N4148; 1N4448 High-speed diodes Product data sheet , diodes 1N4148; 1N4448 FEATURES â'¢ Hermetically sealed leaded glass SOD27 (DO-35) package â , 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in , or 4148PH 1N4448 1N4448 ORDERING INFORMATION TYPE NUMBER 1N4148 PACKAGE NAME â' DESCRIPTION hermetically sealed glass package; axial leaded; 2 leads 1N4448 2004 Aug 10 2 VERSION
NXP Semiconductors
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R76/05/

1n4448

Abstract: 1R SOD-123 1N4448, 1N4448W Silicon E pitaxial P la n a r Diode fast switching diode. Packages -D O -3 5 (1N4448) -S O D -1 23 (1N4448W) -Cathode Mark DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm , 1N4448, 1N4448W Characteristics at Tj = 25 °C Symbol Min. Typ. Max. Unit Forward Voltage at Ip = , 350n - K/W - - 1N4448, 1N4448W Forward characteristics Dynamic forward resistance , 1N4448, 1N4448W Leakage current versus Junction temperature nA 104 1N4448 10
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1R SOD-123
Abstract: 1N4448 Small Signal Diodes FEATURES DO-35 ♦ ♦ < max. 0.0 7 9 (2.0) < Silicon , including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the ^ type , r 1N4448 _ ELECTRICAL CHARACTERISTICS Ratings at 25 °C a m b ie n t , v G eneral S e m ic o n i RATINGS AND CHARACTERISTIC CURVES 1N4448 Forward characteristics mA Dynamic forward resistance versus forward current 1N4448 1N4448 2V 10'2 10'1 -
OCR Scan
LL4448 IMBD4448

philips 1n4148 diode

Abstract: diodes 1n4148 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product , High-speed diodes 1N4148; 1N4448 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD27 (DO-35) package The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar , High-speed diodes 1N4148; 1N4448 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified , - 1 V 1N4448 IF = 5 mA 0.62 0.72 V IF = 100 mA IR IF = 10 mA -
Philips Semiconductors
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philips 1n4148 diode 1n4148 philips philips 1n4148 1N4148 JAN 1n4148 any 1N4148.1N4448 SCA74

1N4148 package SO

Abstract: free 1N4148 100 mA = 1 V 1N4448-TAP or 1N4448-TR Absolute Maximum Ratings Tamb = 25 °C, unless otherwise , 10 mA, iR = 1 mA IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Part 1N4448-TR 1N4148-TR 1N4448-TR , 1N4148 / 1N4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features · Silicon Epitaxial Planar Diodes · Electrically equivalent diodes: 1N4148 e2 1N914 1N4448 - 1N914B · Lead (Pb)-free , Parts Table Part 1N4148 1N4448 Type differentiation Ordering code Remarks Ammopack / Tape and Reel
Vishay Semiconductors
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1N4148 package SO free 1N4148 1N4148.TR 2002/95/EC 2002/96/EC 1N4148-TAP D-74025

1N4148T

Abstract: 1N4148-A ) Ordering Information (Note 3) Part Number 1N4148-A 1N4148-T 1N4448-A 1N4448-T Notes: Case DO-35 DO , NOT RECOMMENDED FOR NEW DESIGN, USE 1N4148W / 1N4448W 1N4148 / 1N4448 FAST SWITCHING DIODE , 1N4148W / 1N4448W 1N4148 / 1N4448 IF, INSTANTANEOUS FORWARD CURRENT (mA) 1,000 10,000 100 , NOT RECOMMENDED FOR NEW DESIGN, USE 1N4148W / 1N4448W 1N4148 / 1N4448 IMPORTANT NOTICE DIODES , 1N4148 100 75 53 300 150 1.0 2.0 500 1N4448 Unit V V V mA mA A Thermal Characteristics Characteristic
Diodes
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1N4148T 1N4148W rev 1N4148 silicon diodes J-STD-020 MIL-STD-202 MIL-STD202 10K/A 10K/T 2011/65/EU

1n4448 diode

Abstract: 1N4148 so ; 1N4448 DESCRIPTION The 1N4148,1N4446,1N4448 are high-speed switching diodes fabricated in planar , . 1N4148; 1N4446; 1N4448 SYMBOL VF 1N4148 1N4446 1N4448 PARAMETER forward voltage see Fig , = 5 mA = 100 mA 0.62 - Ir reverse current reverse current; 1N4448 diode capacitance reverse , High-speed diodes GRAPHICAL DATA 1N4148; 1N4446; 1N4448 711002b 0105483 120 Philips Semiconductors Product specification High-speed diodes 1N4148; 1N4446; 1N4448 MGD004 1.2 cd (PF
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1N4148 so
Abstract: Pack 1N4148-T DO-35 10K/Tape & Reel, 13-inch 1N4448-A Notes: DO-35 10K/Ammo Pack 1N4448-T DO-35 10K/Tape & Reel, 13-inch 3. For packaging details, visit our website at http , 1N4148 / 1N4448 FAST SWITCHING DIODE Features · · · · Fast Switching Speed General , TA = 25°C unless otherwise specified Characteristic Symbol 1N4148 1N4448 Unit VRM , 10mA to IR =1.0mA VR = 6.0V, RL = 100W Maximum Forward Voltage Notes: 1N4148 1N4448 1N4448 Diodes
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J-STD-020C DS12019

1N4148T

Abstract: 1N4148-A Ordering Information Part Number 1N4148-A 1N4148-T 1N4448-A 1N4448-T Notes: (Note 3) Case DO-35 DO , NOT RECOMMENDED FOR NEW DESIGN, USE 1N4148W / 1N4448W 1N4148 / 1N4448 FAST SWITCHING DIODE , 75 53 300 150 1.0 2.0 500 1N4448 Unit V V V mA mA A Characteristic Non-Repetitive Peak Reverse , 1N4448 1N4448 VFM Min 0.62 Max 1.0 0.72 1.0 5.0 50 30 25 4.0 4.0 Unit V A A A nA pF ns Test , solder exemptions applied where applicable, see EU Directive Annex Notes 5 and 7. 1N4148 / 1N4448
Diodes
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free of of 1n4148 75v 150 mA J-STD-020D

1n4148 spice model

Abstract: 1N4148 Leakage Current vs. Junction Temperature (Note 3) Part Number 1N4148-A 1N4148-T 1N4448-A 1N4448-T , 1N4148 / 1N4448 FAST SWITCHING DIODE Please click here to visit our online spice models database , 1N4148 100 1N4448 Unit V 75 V 53 300 500 150 1.0 2.0 IFSM V mA mA A , @TA = 25°C unless otherwise specified Symbol 1N4148 1N4448 1N4448 VFM Min 0.62 Max , applicable, see EU Directive Annex Notes 5 and 7. 1N4148 / 1N4448 Document number: DS12019 Rev. 7 - 2
Diodes
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1n4148 spice model 1N4148 spice 1N4148 marking

1N4148 diode SOD 80

Abstract: free 1N4148 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead , Information Package Part No. Packing DO-35 1N4148 A0 5K / Ammo DO-35 1N4448 A0 5K / Ammo DO-35 1N914B A0 5K / Ammo DO-35 1N4148 R0 10K / 14" Reel DO-35 1N4448 R0 , Average Forward Current Version : D10 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small , IR=100uA V(BR) IR=5uA Max Units 100 V 75 Forward Voltage 1N4448, 1N914B
Taiwan Semiconductor
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1N4148 diode SOD 80 1N4148 CJ 1N4148/1N4448/1N914B
Abstract: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead , Information Package Part No. Packing DO-35 1N4148 A0 5K / Ammo DO-35 1N4448 A0 5K / Ammo DO-35 1N914B A0 5K / Ammo DO-35 1N4148 R0 10K / 14" Reel DO-35 1N4448 R0 , °C Average Forward Current Version : D10 1N4148/1N4448/1N914B 500mW High Speed Switching , 1N4448, 1N914B IF=5.0mA 1N4148 IF=10.0mA 1N4448, 1N914B 0.62 0.72 IF Taiwan Semiconductor
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1N4448

Abstract: diode 1N4448 Ordering code Remarks 1N4448-TAP or 1N4448-TR 1N4448 Type Marking V4448 Ammopack/tape and , 1N4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features · Silicon , Tstg - 65 to + 150 °C 1 1N4448 Vishay Semiconductors Electrical Characteristics Tamb = , ) 1N4448 100 Scattering Limit 10 1 Tj = 25 °C 0.1 0.4 0.8 1.2 1.6 2.0 V F - Forward , VR- Reverse Voltage (V) Figure 3. Reverse Current vs. Reverse Voltage 1N4448 Vishay
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COLOR BAND MARKING CODES DO35 TR/10 TAP/10

diodes 1n4148

Abstract: 1N4148 Switching Dioses 1N4148 1N4448 Switching Diodes Features · · · · Fast Switching Speed , Description 1N4148 1N4448 Unit Reverse Voltage 75 V Peak Reverse Voltage 100 , (661)-257-6060 (661)-257-6415 Rev. C/AH 2007-09-20 Page 1 of 4 Switching Diodes 1N4148 1N4448 , (°C) Instantaneous Forward Voltage (V) 1N4448 Instantaneous Forward Voltage (V) Fig , 2007-09-20 www.taitroncomponents.com Page 2 of 4 Switching Diodes 1N4148 1N4448 Junction
Taitron Components
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JEDEC 1N4148 1N4148 derating
Abstract: 1N4148/1N4448 FORMOSA MS High-speed switching diode Features 1. High reliability 2. High , /1N4448 FORMOSA MS Electrical Characteristics Tj=25â"ƒ Parameter Symbol Min IF=5mA 1N4448 VF 0.62 1N4148 VF IF=100mA Reverse current Type IF=10mA Forward voltage Test Conditions 1N4448 VF Typ Max Unit 0.72 V 0.86 1 V 0.93 1 V , otherwise specified) 1N4148 1N4448 100 V 4 45 pF % FORMOSA MS Dimensions in mm Formosa MS
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1N4148/1N4448 100MH
Abstract: Product specification Philips Semiconductors High-speed diodes 1N4148; 1N4446; 1N4448 , 4446,1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in , Semiconductors Product specification High-speed diodes 1N4148; 1N4446; 1N4448 ELECTRICAL , - 1.0 V 1N4448 If = 5 mA 0.62 0.72 V - 1.0 V lF = 100 mA reverse , - 3 pA Ir reverse current; 1N4448 VB = 20 V; Tj = 100 °C; see Fig.5 Cd diode -
OCR Scan
1N414 G70-4

1n4148

Abstract: 1n916 1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 Diode, switching, leaded These diodes , color and marking Part no. 1N4148 1N4150 1N4153 1N4448 1N4606 1N914 1N916 Color Black Black Black Black Black Black Black Marking 1N4148 R 1N4150 R 1N4153 R 1N4448 R 1N4606 R 1N 914R 1N916 R Absolute , noN in Diodes Switching diodes 1N4148,1N914,1N916,1N4150,1N4153,1N4448,1N4606 Electrical , characteristic curves 1N4148,1N4446,1N4448, 1N914 Figure 1 Figure 2 Diodes MHm 59 1N4148
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1n4148 general diode diode 1N916 914-R

1N4448

Abstract: LL4448 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand This diode is also available in MiniMELF case with the type designation LL4448. XXX Max. 3.9 ST Min. 27.5 Glass Case DO , 1N4448 Dynamic forward resistance versus forward current Forward characteristics mA 10 1N , Stock Exchange, Stock Code: 724) Dated : 20/06/2007 1N4448 Leakage current versus junction
Semtech Electronics
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Abstract: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings (Ta = 25oC) Symbol Value , temperature. mW C C 1N4448 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit , Circuit 1N4448 Dynamic forward resistance versus forward current Forward characteristics mA 10 , 0.8 200 0.7 100 0 0 200 oC 100 Tamb 0 0 2 4 8 6 VR 10 V 1N4448 Bytes
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1N4448

Abstract: MARK 1N forward current Q 1N4448 7" = 25° C ! =1kHz \ \ S| V , of 8 mm from case are kept at ambient temperature mW 1N4448 Relative capacitance versus reverse voltage 1,1 c , 1N4448 Ì / J , « 3 ¡FRM 2 10 s 4 ] 0,1 1N4448 I I I I I I v-tp/T T- 1/fp
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MARK 1N jy 1n4448 p5001
Showing first 20 results.