1N4531 1N4148 1N4150 1N4448 DO-34 DO-35 1/10IR - Datasheet Archive

 

Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 This product is available only outside of Japan. External dimensions

 

1N4531 1N4531 / 1N4148 1N4148 / 1N4150 1N4150 / 1N4448 1N4448 Diodes Switching diode 1N4531 1N4531 / 1N4148 1N4148 / 1N4150 1N4150 / 1N4448 1N4448 This product is available only outside of Japan. External dimensions (Units : mm) Application High-speed switching 1N4531 1N4531 CATHODE BAND (BLACK) Type No. Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. 0.5±0.1 C A 29±1 2.7±0.3 1.8±0.2 29±1 ROHM : MSD EIAJ : - JEDEC : DO-34 DO-34 Construction Silicon epitaxial planar 1N4148 1N4148 / 1N4150 1N4150 / 1N4448 1N4448 CATHODE BAND (BLACK) Type No. 0.5±0.1 C A 29±1 3.8±0.2 1.8±0.2 29±1 ROHM : GSD EIAJ : - JEDEC : DO-35 DO-35 Absolute maximum ratings (Ta = 25°C) Type VRM (V) VR (V) IFM (mA) IO (mA) IF (mA) IFSM 1µs (A) P (mW) Tj (°C) Topr (°C) Tstg (°C) 1N4531 1N4531 100 75 450 150 200 2 500 200 -65~+200 -65~+200 1N4148 1N4148 100 75 450 150 200 2 500 200 -65~+200 -65~+200 1N4150 1N4150 50 50 600 200 250 4 500 200 -65~+200 -65~+200 1N4448 1N4448 100 75 450 150 200 2 500 200 -65~+200 -65~+200 Electrical characteristics (Ta = 25°C) VF (V) Type @ @ 0.1mA 0.25mA BV (V) Min. @ @ @ @ @ @ @ 1mA 2mA 5mA 10mA 20mA 30mA 50mA @ @ @ 100mA 200mA 250mA 1N4531 1N4531 @ 5µA 75 @ 100µA 100 1.0 75 1.0 0.66 0.54 0.76 0.82 0.87 1N4150 1N4150 0.74 0.62 0.86 0.92 0.62 1N4448 1N4448 0.72 1.0 The upper figure is the minimum VF and the lower figure is the maximum VF value. 100 - 50 - 1N4148 1N4148 100 IR (µA) Max. @25°C VR (V) 0.025 20 5.0 75 0.025 20 5.0 75 0.1 50 0.025 20 5.0 75 trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100 Cr (pF) @150°C 50.0 20 4 4 50.0 20 4 4 100.0 50 2.5 4 50.0 20 4 4 1.0 1N4531 1N4531 / 1N4148 1N4148 / 1N4150 1N4150 / 1N4448 1N4448 Diodes Electrical characteristic curves (Ta = 25°C) REVERSE CURRENT : IR (nA) 20 10 5 2 0.2 0 25°C Ta=75°C Ta=25°C Ta=-25 °C 1 0.5 100°C 3000 Ta=1 FORWARD CURRENT : IF (mA) 50 1000 70°C 300 50°C 100 30 Ta=25°C 10 3 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 FORWARD VOLTAGE : VF (V) 40 60 80 100 120 Fig. 2 Reverse characteristics 3 100 SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 1/10IR 2 1 PULSE Single pulse 50 20 10 5 2 0 0 10 20 1 0.1 30 FORWARD CURRENT : IF (mA) 10 5 50 SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0.1IR 0 IR 1000 10000 Fig. 5 Surge current characteristics D.U.T. PULSE GENERATOR OUTPUT 50 100 PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics 0.01µF 1 Fig. 6 Reverse recovery time (trr) measurement circuit 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics REVERSE RECOVERY TIME : trr (ns) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 Fig. 3 Capacitance between terminals characteristics