Datasheet Search Results			1 - 8 of about 8 for 1N3836
	1N3836	American Power Devices	(1N3831 - 1N3845) Four Layer Diodes	226.26 Kb,  3 Pages.
	1N3836	APD Semiconductor, Inc.	DO7, DO-35 Four Layer Diodes	84.65 Kb,  2 Pages.
	1N3836	APD Semiconductor, Inc.	Four Layer Diodes / Rectifiers	119.39 Kb,  3 Pages.
	1N3836	Microwave Diode	(1N3831 - 1N3846) Silicon Planar Thyristor Diodes	228.05 Kb,  2 Pages.
	1N3836	Microwave Diode	Silicon Planar Thyristor Diodes	92.88 Kb,  2 Pages.
	1N3836	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	66.06 Kb,  1 Pages.
	1N3836	N/A	Semiconductor Devices, Diode, and SCR Datasheet Catalog	61.49 Kb,  1 Pages.
	1N3836	Motorola	Motorola Semiconductor Datasheet Library	108.01 Kb,  1 Pages.

Fulltext Datasheet Results		1 - 5 of about 5 for 1N3836
	First line: 4E20-28* 1N3836 shockley* ELECRONICS/APD 3541SL.3 FOUR-LAYER DIODES DO-7/DO-35 Case Switching Voltage Holding Current Range Range +12S'C 2suc Abstract: .. 0.5-15 40 Max 1N3834 1N3834 35+4 28-41 0.5-t5 40 Max 1N3835 1N3835 40Â ±4 32-46 0.5-15 40 Max 1N3836 45 Â ±4 37-51 0.5-15 40 Max 1N3837 1N3837 , 50Â ±4 41-57 0.5-15 40 Max 1N3839 1N3839 20+4 14-25 14.0-45 5 Min DO-7 Case DO-7 Case ..  Tags: shockley* 1N3836 4E20-28* 1N3839   datasheet abstract..	103.21 Kb	2 Pages	OCR Scan
	First line: shockley* ELECRONICS/APD 3541SL.3 FOUR-LAYER DIODES DO-7/DO-35 Case Switching Voltage Holding Current Range Range +12S'C 2suc Abstract: .. 0.5-15 40 Max 1N3834 1N3834 35+4 28-41 0.5-t5 40 Max 1N3835 1N3835 40Â ±4 32-46 0.5-15 40 Max 1N3836 45 Â ±4 37-51 0.5-15 40 Max 1N3837 1N3837 , 50Â ±4 41-57 0.5-15 40 Max 1N3839 1N3839 20+4 14-25 14.0-45 5 Min DO-7 Case DO-7 Case ..  Tags: shockley*   datasheet abstract..	103.2 Kb	2 Pages	OCR Scan
	First line: 4e20-3 1N3842 1N3836 fri07* FOUR LAYER DIODES Parameters 4-Layer Diodes Switching current 125|aA Holding voltage volts voltage <1,2V impedance ohms Forward leakage current Reverse leakage current Reverse breakdown voltage >0.60 Abstract: .. 1N3836 45 Â ± 4 37 - 51 0.5 15 40 max. 1N3837 1N3837 50 Â ± 4 41 - 57 0.5 15 40 max. 1N3839 1N3839 20 Â ± 4 14 - 25 14.0 45 5 min. 1N3840 1N3840 25 Â ± 4 19 - 30 14 45 1N3841 1N3841 30 Â ± 4 23 - 36 14 45 1N3842 1N3842 35 Â ± 4 28 - 41 14 45 5 min. 1N3843 1N3843 40 Â ± 4 32 - 46 ..  Tags: fri07* 1N3836 1N3842 4e20-3 4E20-8   datasheet abstract..	137.97 Kb	3 Pages	OCR Scan
	First line: 4e20-3 FOUR LAYER DIODES Parameters 4-Layer Diodes Switching current 125pA Holding voltage volts voltage <1,2V impedance ohms Forward leakage current Reverse leakage current Reverse breakdown voltage >0.60 Abstract: .. 1N3836 45 Â ± 4 37 - 51 0.5 15 40 max. 1N3837 1N3837 50 Â ± 4 41 - 57 0.5 15 40 max. 1N3839 1N3839 20 Â ± 4 14 - 25 14.0 45 5 min. 1N3840 1N3840 25 + 4 19 - 30 14 45 1N3841 1N3841 30 + 4 23 - 36 14 45 1N3842 1N3842 35 Â ± 4 28 - 41 14 45 5 min. 1N3843 1N3843 40 + 4 32 - 46 14 ..  Tags: 4e20-3 1N3839   datasheet abstract..	244.81 Kb	3 Pages	OCR Scan
	First line: SPECS 0000125 OOOBTOS MIL-S-19500/304B AMENDMENT August 1987 SUPERSEDING- AMENDMENT July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R JAN, JANTX, JANTXV, JANS This amen Abstract: .. 3 High temperature operation: Reverse current 1N3885 1N3885 , 1N3890 1N3890 , 1N3890R 1N3890R 1N3836, 1N3891 1N3891 , 1N3891R 1N3891R 1N3888 1N3888 , 1N3893 1N3893 , 1N3893R 1N3893R Reverse current average 1N3885 1N3885 , 1N3890 1N3890 , 1N3890R 1N3890R 1N3886 1N3886 , 1N3891 1N3891 , 1N3891R 1N3891R ..  Tags:   datasheet abstract..	745.66 Kb	21 Pages	OCR Scan

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Specsheet Results
	1N3836	N/A	Four-Layer (Shockley) Diode	Specification

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