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1N3600 Datasheet, Circuit, PDF, & Application Note Results
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| Datasheet Search Results |
1 - 30 of about 30 for 1N3600 |
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1N3600 |
APD Semiconductor, Inc. |
Planar Diodes, DO-35 Case |
64.5 Kb, 1 Pages. |
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1N3600 |
BKC International |
Silicon Diodes |
57.93 Kb, 1 Pages. |
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1N3600 |
Central Semiconductor |
Silicon Switching Diode, DO-35 Case |
61.1 Kb, 1 Pages. |
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1N3600 |
Compensated Devices Incorporated |
SWITCHING DIODES |
31.35 Kb, 2 Pages. |
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1N3600 |
Crimson Semiconductor |
Silicon Diodes |
32.99 Kb, 1 Pages. |
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1N3600 |
Fairchild Semiconductor |
High conductance ultra fast diode. Working inverse voltage 50 V. |
327.81 Kb, 10 Pages. |
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1N3600 |
General Diode |
Silicon Diode Selection Guide |
225.57 Kb, 5 Pages. |
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1N3600 |
General Electric |
Semiconductor Data Book 1971 |
274.87 Kb, 1 Pages. |
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1N3600 |
International Semiconductor, Inc. |
Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin |
123.75 Kb, 1 Pages. |
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1N3600 |
Microsemi Corporation |
Signal or Computer Diode |
43.2 Kb, 2 Pages. |
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1N3600 |
Microsemi Corporation |
Computer Switching Diodes |
140.87 Kb, 3 Pages. |
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1N3600 |
Microsemi Corporation |
Computer Diode 200mA Low Power, Switching |
84.05 Kb, 2 Pages. |
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1N3600 |
N/A |
The Diode Data Book with Package Outlines 1993 |
94.22 Kb, 2 Pages. |
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1N3600 |
National Semiconductor |
Diode Data |
135.88 Kb, 1 Pages. |
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1N3600 |
Raytheon Company |
Selection Guide 1977 |
34.41 Kb, 1 Pages. |
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1N3600 |
ROHM Electronics |
Fast Recovery Rectifier / Diode |
31.04 Kb, 1 Pages. |
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1N3600 |
Semitronics Corp. |
Silicon Diodes |
211.74 Kb, 4 Pages. |
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1N3600 |
Silec Semiconductors |
Shortform Data Book 1976 |
61.29 Kb, 1 Pages. |
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1N3600 |
Taitron Components |
Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin |
15.18 Kb, 1 Pages. |
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1N3600 |
Thomson-CSF |
Shortform Semiconductor Catalogue 1982 |
127.2 Kb, 1 Pages. |
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1N3600 |
Thomson-CSF |
Condensed Data Book 1977 |
42.74 Kb, 1 Pages. |
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1N3600+JAN |
Defense Electronics Supply Center |
200mA Iout, 50V Vrrm Fast Recovery Rectifier |
307.44 Kb, 12 Pages. |
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1N3600JAN |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
40.4 Kb, 1 Pages. |
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1N3600+JANTX |
Defense Electronics Supply Center |
200mA Iout, 50V Vrrm Fast Recovery Rectifier |
307.44 Kb, 12 Pages. |
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1N3600JANTX |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
40.4 Kb, 1 Pages. |
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1N3600+JANTXV |
Defense Electronics Supply Center |
200mA Iout, 50V Vrrm Fast Recovery Rectifier |
307.44 Kb, 12 Pages. |
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1N3600JANTXV |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
37.22 Kb, 1 Pages. |
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1N3600UR |
Compensated Devices Incorporated |
SWITCHING DIODE |
32.84 Kb, 2 Pages. |
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1N3600UR |
Microsemi Corporation |
DIODE SWITCHING 50V 0.3A 2 pin DO-213AA |
58.67 Kb, 1 Pages. |
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1N3600UR-1 |
Microsemi Corporation |
DIODE SWITCHING 50V 0.3A 2DO-1213AA |
58.67 Kb, 1 Pages. |
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| Contextual Datasheet Results |
1 - 13 of about 13 for 1N3600 |
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First line: PROCESS Switching Diode CPD41 High Current Switching Diode Chip PROCESS DETAILS Process Abstract: .. PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 8.0 MILS. Anode Bonding Pad Area 6.5 x 6.5 MILS. Top Side Metalization Al - 30,000Å. Back Side .. datasheet abstract.. |
271.06 Kb |
2 Pages |
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First line: FEATURES 1N3600 1N3600 AVAILABLE JANTX JANTXV MIL-PRF-19500 / 231 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY Abstract: .. • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION. AC ELECTRICAL CHARACTERISTICS .. datasheet abstract.. |
62.5 Kb |
1 Pages |
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First line: 1N4150-1 AVAILABLE JANTX JANTXV MIL-PRF-19500 / 231 1N3600 AVAILABLE JANTX JANTXV MIL-PRF-19500 / 231 SWITCHING DIODES Abstract: .. 1N3600 75 50 0.1 100 2.5 4. 1N4150,-1 75 50 0.1 100 2.5 4. 37. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE 978 620-2600 FAX 781 689-0803. WEBSITE: http://www.microsemi.com. 1N4150 and 1N4150 .. datasheet abstract.. |
43.2 Kb |
2 Pages |
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First line: 1N4150-1 AVAILABLE JANTX JANTXV MIL-PRF-19500 / 231 1N3600 AVAILABLE JANTX JANTXV MIL-PRF-19500 / 231 SWITCHING DIODES Abstract: .. 1N3600 75 50 0.1 100 2.5 4. 1N4150,-1 75 50 0.1 100 2.5 4. 22 COREY S T R E E T, MELROSE, MASSACHUSETTS 02176 PHONE 781 665-1071 FAX 781 665-7379. WEBSITE: http://www.cdi-diodes.com E-mail: mail .. datasheet abstract.. |
31.35 Kb |
2 Pages |
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First line: Notification Date April Process Change Notice Parts Affected Chip process CPD41 Abstract: .. CPD41-CMPD914-WN CPD41-1N3600-WN CPD41-1N4148-CT CPD41-1N4150-CT CPD41-1N4150-WN. CMPD4150 CMHD4150 BAS56 .. datasheet abstract.. |
101.38 Kb |
2 Pages |
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First line: PROCESS Switching Diode CPD41 Central High Current Switching Diode Chip Semiconductor Corp. Abstract: .. PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 8.0 MILS. Anode Bonding Pad Area 6.5 x 6.5 MILS. Top Side Metalization Al - 30,000Å. Back Side .. datasheet abstract.. |
128.03 Kb |
2 Pages |
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First line: Silicon Diodes DO-35 Case Switching Diodes TYPE VRRM mA mA ns pF Abstract: .. 1N3600 50 200 1.0 200 10 2.5. 1N3604 40 150 1.0 50 2.0 2.0. 1N3605 75 150 0.88 20 2.0 2.0. 1N4148 100 150 1.0 10 4.0 4.0. 1N4150 50 200 1.0 200 4.0 2.5. 1N4151 75 150 1.0 50 2.0 2.0. 1N4152 40 150 0.88 20 2.0 2.0. 1N4153 .. datasheet abstract.. |
27.04 Kb |
1 Pages |
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First line: Switching Diodes Part CrossReference Power Dissipation d mW 1N3600 1N3064 1N4009 1N4146 1N914 Abstract: .. 1N3600 - 200 200 75 100 @ 50 1.0 @ 200 4.00. 1000/10000. 1N3064 - 250 100 75 100 @ 50 1.0 @ 10 4.00. 1N4009 - 250 100 35 100 @ 25 1.0 @ 30 4.00. 1N4146 1N914A 250 200 100 25 @ 20 1.0 @ 20 4.00. 1N914 -. 500. 200 100 25 @ 20 1 .. datasheet abstract.. |
15.18 Kb |
1 Pages |
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First line: QML-9500-19 TABLE CONTENTS PART NUMBER 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 Abstract: .. 1N3600 231 X X X X. 1N3611 - 1N3614 228 X X. 1N3644 - 1N3647 279 X X X. 1N3649 - 1N3650 & R 260 X X X X. 1N3671A, 1N3673A & AR 260 X X X X. 1N3766, 1N3768 & R 297 X X X X. MANUFACTURING LOCATION RELIABILITY LEVEL. PART NUMBER .. datasheet abstract.. |
255.27 Kb |
1 Pages |
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First line: Index Industry Part Number Central Process Page Industry Part Number Central Process Abstract: .. 1N3600 ..CPD93V ..246 1N3604 ..CPD93V ..246 1N3605 ..CPD93V .. datasheet abstract.. |
49.99 Kb |
18 Pages |
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First line: Discrete POWER Signal Technologies Diode Cross-Reference Guide Industry Part Number Recommended Fairchild Abstract: .. 1N3600 1N3601 1N3602 1N3603 1N3604 1N3605 1N3606 1N3607 1N3608 1N3609 1N3625 1N3638B 1N3653 1N3654 1N3666 1N3668 1N3675B 1N3676B 1N3677B 1N3678B 1N3679B 1N3680B 1N3681B 1N3682B 1N3683B .. datasheet abstract.. |
77.65 Kb |
23 Pages 
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First line: Application Note MSAN-141 Implementation Details MT8930B / 31BS / T Interface ISSUE November Contents MT8930B / 31B S / T-Interface Abstract: .. diodes are the 1N916, 1N4149, 1N4448, 1N4449, 1N4150, 1N4450, 1N4148, 1N3600 : SNIC. LTx. VBias. LRx. VDD. VDD. 10μF. 40Ω. VDD. VDD. 2 : 1. 2 : 1. Note: The two diodes at the VBias input pin are not needed to meet .. datasheet abstract.. |
244.02 Kb |
29 Pages 
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First line: Prices Guaranteed Until July Catalog Search Products Suppliers Products Only Products Order Abstract: .. -1N3209 584-1N3210 584-1N3212 584-1N3212R 584-1N3213 584-1N3214 610-1N3600 592-1N3604 584-1N3671A 584-1N3673A 584-1N3673RA 584-1N3766 592-RLR4003 592-RLR4004 333-1N4148 583-BAS16 .. datasheet abstract.. |
19028.62 Kb |
423 Pages
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| APD Semiconductor | | BKC International | | Central Semiconductor | | Compensated Devicesorporated | | Crimson Semiconductor | | Defense Electronics Supply Center | | Fairchild Semiconductor | | General Diode | | General Electric | | International Semiconductor | | Microsemi | | National Semiconductor | | ROHM Electronics | | Raytheon Company | | Semitronics | | Silec Semiconductors | | Taitron Components | | Thomson-CSF |
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