500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
1N3600 Microsemi Corporation Rectifier Diode, 1 Element, 0.2A, Silicon, DO-7, HERMETIC SEALED, GLASS PACKAGE-2 visit Digikey Buy
JAN1N3600 Microsemi Corporation Rectifier Diode, 1 Element, 0.2A, Silicon, DO-7, SIMILAR TO DO-7, 2 PIN visit Digikey Buy
M83-LML3M1N36-0000-000 Harwin Board Connector, 36 Contact(s), 3 Row(s), Male, Right Angle, 0.079 inch Pitch, Solder Terminal, M2x0.4, Black Insulator, ROHS COMPLIANT visit Digikey Buy
M83-LFC1F1N36-0000-000 Harwin Board Connector, 36 Contact(s), 3 Row(s), Female, 0.079 inch Pitch, Crimp Terminal, M2x0.4, Black Insulator, Plug visit Digikey Buy
M83-LFD1F1N36-0000-000 Harwin Board Connector, 36 Contact(s), 3 Row(s), Female, 0.079 inch Pitch, Crimp Terminal, M2x0.4, Black Insulator visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 1N3600 TR Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1265 Price Each : $0.1382
Part : JAN1N3600 Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $2.8916 Price Each : $3.1579
Part : JANTX1N3600 Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $4.5181 Price Each : $4.9342
Part : JANTXV1N3600 Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $6.9277 Price Each : $7.5658
Part : M83-LFC1F1N36-0000-000 Supplier : Harwin Manufacturer : Avnet Stock : - Best Price : €11.8593 Price Each : €14.8242
Part : M83-LML3M1N36-0000-000 Supplier : Harwin Manufacturer : Avnet Stock : - Best Price : €10.4752 Price Each : €13.0940
Part : 1N3600 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 402 Best Price : $1.00 Price Each : $1.46
Part : M83-LFC1F1N36-0000-000 Supplier : Harwin Manufacturer : Newark element14 Stock : - Best Price : $26.00 Price Each : $32.73
Part : M83-LML3M1N36-0000-000 Supplier : Harwin Manufacturer : Newark element14 Stock : - Best Price : $14.00 Price Each : $20.50
Part : JAN1N3600 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $3.32 Price Each : $3.51
Part : JANTX1N3600 Supplier : Microsemi Manufacturer : Future Electronics Stock : 3,816 Best Price : $4.10 Price Each : $4.34
Part : JANTX1N3600 Supplier : Microsemi Manufacturer : Bristol Electronics Stock : 6 Best Price : $6.5520 Price Each : $10.08
Part : 1N3600 Supplier : - Manufacturer : basicEparts Stock : 74 Best Price : - Price Each : -
Part : 1N3600JANTX Supplier : Microsemi Manufacturer : Chip1Stop Stock : 11,163 Best Price : $4.25 Price Each : $4.25
Part : JAN1N3600 Supplier : COBHAM Manufacturer : Chip1Stop Stock : 34 Best Price : $17.40 Price Each : $17.40
Part : JANTX1N3600 Supplier : Microsemi Manufacturer : New Advantage Stock : 3,052 Best Price : $4.56 Price Each : $4.83
Shipping cost not included. Currency conversions are estimated. 

1N3600 Datasheet

Part Manufacturer Description PDF Type
1N3600 Compensated Devices SWITCHING DIODES Original
1N3600 Microsemi Signal or Computer Diode; Package: DO-35; IO (A): 0.2; IFSM (A): 0.5; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.02; IR ( uA): 0.1; Original
1N3600 Microsemi Signal or Computer Diode Original
1N3600 Taitron Components Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin Original
1N3600 APD Semiconductor Planar Diodes, DO-35 Case Scan
1N3600 APD Semiconductor Planar Diodes Scan
1N3600 BKC International Silicon Diodes Scan
1N3600 Central Semiconductor Silicon Switching Diode, DO-35 Case Scan
1N3600 Crimson Semiconductor SILICON DIODES Scan
1N3600 Crimson Semiconductor Silicon Diodes Scan
1N3600 Fairchild Semiconductor High conductance ultra fast diode. Working inverse voltage 50 V. Scan
1N3600 General Diode Silicon Diode Selection Guide Scan
1N3600 General Electric Semiconductor Data Book 1971 Scan
1N3600 International Semiconductor Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin Scan
1N3600 Microsemi Computer Diode 200mA Low Power, Switching Scan
1N3600 Microsemi Computer Switching Diodes Scan
1N3600 Motorola Motorola Semiconductor Datasheet Library Scan
1N3600 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N3600 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N3600 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

1N3600

Catalog Datasheet MFG & Type PDF Document Tags

1N3600

Abstract: you lost me CART | SHIPPING http://store.americanmicrosemiconductor.com/1n3600.html 4/12/2010 , 1N3600 High conductance ultra fast diode. Working inverse voltage 50 V. 2.76 Diodes H. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 1N3600 1N3600 High conductance ultra fast diode. Working , 2.76 Manufacturer Partnumber: List Price: Our Price: You Save: 1N3600 $ 3.45 Information Spec
American Microsemiconductor
Original
you lost me

in3600

Abstract: 1N4150 COMPUTER DIODE 200mA Low Power, Switching IN3600; JAN, JANTX & JANTXV 1N3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES â'¢ Metallurgical Bond â'¢ Qualified to , °C to | 200°C (1N3600). â'"65'C to +175°C , .018-,022 .46-56 D .018-022 46-56 DO-7 1N3600 DO-35 1N4150 5-9 Microjsemi Corp. Watertown The diode experts 1N3600, 1N4150; JAN, JANTX & JANTXV 1N3600, 1N4150, 1N4150-1 ELECTRICAL SPECIFICATIONS
-
OCR Scan
JTXV1N3600 1N4150 JANTXV JANTX 1N4150 IN4150 JANTX 1N4150-1 ADE 617 MIL-S-19500/231 150-C 926-0404-FAX

SS321 equivalent

Abstract: DIODE 1N9148 1N914A 1 1N914B M46P-X510 35.90 1N3064 M46P-X507 Very high speed 35.89 1N3600 M79P.X506 High , and low capacitance. fSBllIP: 35.91 1N4150 M79P-X506 Similar to 1N3600 (Chip) 2 35.97 1N4152 , 1N4533 M46P-X516 Similar to 1N3605 (Chip) 35.91 1N4606 M79P-X501 Similar to 1N3600 (Chip) except high
-
OCR Scan
MA1703 MA1704 SS321 SS322 SS324 SS325 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 1N3600 Availability Buy 1N3600 at our online store ! 1N3600 Information Cate gory » Diodes Class » High -Speed/Fast Recovery Diodes Type » General Purpose 1N3600 Specifications Milita ry/High-R e l : N I(O ) Max .(A) O utput C urre nt : 200m V(R R American Microsemiconductor
Original

beta transistor 2N2222

Abstract: 2N2924 equivalent Very high speed 35.89 1N3600 M79P.X506 High conductance and high-speed switching in logic, core , Similar to 1N3600 (Chip) 2 35.97 1N4152 M46P-X516 Similar to 1N3605 (Chip) 1 35.91 1N4551 M87PX500 High , M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent
-
OCR Scan
2N2714 2N3391 2N5232 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 2N2711 2N2712 2N2713 2N2923 2N2924

1n3600

Abstract: 1N4150 P O M P I JTFR DIODF W I T ,r u 200rnA Low Power, Switching 1 L/IV7t/U 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES , +200°C (1N3600). -65'C to +175"C MECHANICAL SPECIFICATIONS DO-7 1N3600 DO-35 1N4150 12/79 8-18 h U N IT R O D E 1N3600, 1N4150; JAN, JANTX & JANTXV 1N3600, 1N4150, 1N4150-1 ELECTRICAL SPECIFICATIONS (at 25'C unless noted) R e vo te Breakdown Voltage
-
OCR Scan
1n3600 chip

in3600

Abstract: IN4150 · 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 · 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 · SWITCHING DIODES · HERMETICALLY SEALED · METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 · DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C , 1N3600 1N4150,-1 TA = 25°C TA = 150°C ac signals = 50 mV (p-p) RL = 100 ohms V dc V
Microsemi
Original
D0-35 IN4150-1
Abstract: n O M P U T F P niOHF ; ; nm r u 1 Lâ'rv 200m A Low Power, Switching I N 3600; JAN, JAN TX & JANTXV 1N3600 1N4150; JAN, JAN TX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION â'¢ â'¢ â'¢ â'¢ T h is series of sw itching d iodes is useful in m any com puter sw , MicrojsemiCorp. 5-9 bllSñbS 0002002 3Ã"L Watertown The diode experts 1N3600, 1N4150; JAN, JANTX & JANTXV 1N3600, 1N4150, 1N4150-1 ELECTRICAL SPECIFICATIONS (at 25°C unless noted) CAaracteristics -
OCR Scan

IN3600

Abstract: IN4150 · 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 · 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 · SWITCHING DIODES · HERMETICALLY SEALED · METALLURGICALLY BONDED 1N4150 and 1N4150-1 and 1N3600 · DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C , 100 mAdc TA = 150°C ac signals = 50 mV (p-p) RL = 100 ohms V dc 1N3600 1N4150,-1 V
Compensated Devices
Original
Abstract: DIGITRON SEMICONDUCTORS 1N3600, 1N4150 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Operating junction and storage temperature range -65° to 175°C Operating current 300mA @ TA = 25°C Derating current 2.0mA dc/°C above TL = 75°C @ L = 3/8â' Forward surge current 4A (tp = 1µs , dc µA dc pF ns 1N3600 75 50 0.1 100 2.5 4 1N4150 75 50 0.1 , SEMICONDUCTORS 1N3600, 1N4150 SWITCHING RECTIFIER TYPICAL FORWARD CURRENT VS. FORWARD VOLTAGE TYPICAL DIGITRON
Original
MIL-PRF-19500

1N408

Abstract: FD100 1N4376 JAN FD777 1N5282 1N5317 1N3606 1N4153 1N4534 1N3062 1N3066 1N3605 1N4152 1N4533 1N3600 1N914 @ , 1N3064 JAN 1N3064 JANTX 1N 3065 1N3600 JAN 1N3600 JANTX 1N4086 @ @ @ @ @ Preferred devices in bold
-
OCR Scan
N4376 FD600 1N916B FD100 1N408 1n4376 equivalent 1N4148 JANTX DO-7/DO-35 FD700 1N4244 DO-34 FDH600

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 speed 35.89 1N3600 M79P.X506 High conductance and high-speed switching in logic, core, hammer driver , , fast recovery time, low leakage and low capacitance. fSBllIP: 35.91 1N4150 M79P-X506 Similar to 1N3600 , ) 35.89 1N4532 1 1N4533 M46P-X516 Similar to 1N3605 (Chip) 35.91 1N4606 M79P-X501 Similar to 1N3600
-
OCR Scan
M26P-X505 2N3976 PNP Transistor 2N2222 equivalent 2N2907 equivalent equivalent transistor 2N2222 1N3605 equivalent 2n2222 npn transistor general purpose 1n3600 equivalent 1N4454 2N708 M82P-X500 2N918 M63P-X503 2N929

1N4150 metallurgically

Abstract: MIL-PRF-19500/231 Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features · Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 · Metallurgically Bonded · Hermetically Sealed · Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating , IF = IR = 10 to 100 mA dc RL = 100 V dc V (pk) A dc A dc pF ns 1N3600 75 , Revision Date: 12/7/2009 New Product 1 1N4150, 1N4150-1 & 1N3600 Graphs Aeroflex / Metelics
Aeroflex / Metelics
Original
1N4151 1N4150 metallurgically aeroflex JANTX 1N4150-1 888-641-SEMI
Abstract: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features â'¢ Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 â'¢ Metallurgically Bonded â'¢ Hermetically Sealed â'¢ Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C , 1N3600 75 50 0.1 100 2.5 4.0 1N4150, -1 75 50 0.1 100 2.5 4.0 , mm Revision Date: 2/5/2013 1 1N4150, 1N4150-1 & 1N3600 Graphs Aeroflex / Metelics, Inc Aeroflex / Metelics
Original

1N3600

Abstract: 1N4150 Datasheet Central 1N3600 IN*» 150 Semiconductor Corp. SILICON SWITCHING DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3600, 1N4150, silicon planar epitaxial diode is characterized by its miniature size, ultra fast switching speed, low capacitance, low leakage, and high conductance. Accordingly, it is ideally suited for applications such as
-
OCR Scan

in3600

Abstract: JANTX, AND JANTXV PER MIL-PRF-19500/231 · 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 ·SWITCHING DIODES · HERMETICALLY SEALED · METALLURGICALLY BONDED . DOUBLE PLUG CONSTRUCTION · 1N4150-1 AVAILABLE IN JAN, 1N4150 and 1N4150-1 and 1N3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ T ^ = +25°C Derating , Vdc 1N3600 1N4150.-1 75 75 FIGURE 1 FORWARD VOLTAGE LIMITS - ALL TYPES V F1 Lim its I p = 1 mA
-
OCR Scan
MIL-S-19S0Q/231

SMD diode C5C

Abstract: smd diode A82 BAND BAND BAND 1N 914/1N4148 CSSD2003 1N3600/1N4150 1N914B/1N4448 1N914/1N4148 CSSD2003 1N914/1N4148 1N914/1N4148 1N3600/1N4150 1N 914B/1N4448 soft SOT-143 SOD-80 SOT-23 TYPE NO. CBAS17 V {VO J
-
OCR Scan
SMD diode C5C smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD 1n4148 smd diode BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448
Abstract: Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features â'¢ Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 â'¢ Metallurgically Bonded â'¢ Hermetically Sealed â'¢ Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C , 1N3600 75 50 0.1 100 2.5 4.0 1N4151, -1 75 50 0.1 100 2.5 4.0 , dimensions in INCH mm Revision Date: 12/7/2009 New Product 1 1N4150, 1N4150-1 & 1N3600 Graphs Aeroflex / Metelics
Original

diode D07-15

Abstract: diode d07 Very high speed 35.89 1N3600 M79P.X506 High conductance and high-speed switching in logic, core , Similar to 1N3600 (Chip) 2 35.97 1N4152 M46P-X516 Similar to 1N3605 (Chip) 1 35.91 1N4551 M87PX500 High , M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent
-
OCR Scan
1N814 1N3067 1N3068 1N3069 diode D07-15 diode d07 DIODE 1N4087 2N2222 chip D07 15 1N251 1N252 1N461 1N625 1N62G

914B

Abstract: 1N3600 DO-35 75 100 50 0.575 0.650 0.710 1.0 0.250 1.0 2.0 10.0 (Note 3) D4 1N3600 DO-35 75 100 , -35 See Data for 1N3600 1N4151 DO-35 75 50 50 1.0 50 (Note 2) D4 1N4152 DO-35 40 50 30 0.49
-
OCR Scan
1N916 1N916A 1N4009 914B 1n4147 diode 1n4009 1N4146 1N914A/914B 1N4147

2N3638 equivalent

Abstract: 2N2219 transistor substitute 1N914A 1 1N914B M46P-X510 35.90 1N3064 M46P-X507 Very high speed 35.89 1N3600 M79P.X506 High , and low capacitance. fSBllIP: 35.91 1N4150 M79P-X506 Similar to 1N3600 (Chip) 2 35.97 1N4152 , 1N4533 M46P-X516 Similar to 1N3605 (Chip) 35.91 1N4606 M79P-X501 Similar to 1N3600 (Chip) except high
-
OCR Scan
2N5813 2N5816 2N5818 M26P-X5S8 2N5815 2N3638 equivalent 2N2219 transistor substitute 2N3638 transistor of 2n2905 2N5810 2N5811 2N5812 2N5814 2M5815

JANS1N4150-1

Abstract: JX4150 , 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, AND 1N3600, JAN, JANTX, AND JANTXV JANS1N4150-1 is superseded by MIL-PRF-19500/609 JANS1N6640 (see 6.4). The DO-7 version of the 1N3600 is inactive for new , 1N4150UBD 1N3600 (1) (2) (3) (4) 325 120 -55 to 250 325 +175 For temperature-current , -19500/231M w/AMENDMENT 2 Types 1N4150-1, 1N3600 (DO-35) 1N3600 (DO-7) Symbol BD BL LD LL , .5M, diameters are equivalent to x symbology. TYPES 1N4150-1, 1N3600 FIGURE 1. Physical dimensions. 3
DEPARTMENT OF DEFENSE
Original
1N4150UR-1 JANS1N4150UR-1 JANS1N6640US JX4150 JV4150 diode MARKING CODE jx J4150 JX-41 MIL-PRF-19500/231M DO-213AA

JAN 1N4150-1

Abstract: JANS1N4150-1 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3600, 1N4150-1, AND , Millimeters Notes | I I I i Min | Max Min Max I I A | .140 | .300 3.56 7.62 | 1N3600 I & i .056 | .107 , 1N3600 and 1N4150-1 for dimension A. 6. The specified lead diameter applies in the zone between .050 , zone the lead diameter shall not exceed diameter B. FIGURE 2. Physical dimensions (types 1N3600 and
-
OCR Scan
JAN 1N4150-1 Q033b avf5 Scans-0016000 JANTX, JX, JAN 3.3 diode D0213 D0DD125 MIL-S-19500/231F JANSIN4150-1 MIL-S-19500/609 MIL-S-19500 11N3600

2N2219 transistor substitute

Abstract: 2N3416 equivalent Very high speed 35.89 1N3600 M79P.X506 High conductance and high-speed switching in logic, core , Similar to 1N3600 (Chip) 2 35.97 1N4152 M46P-X516 Similar to 1N3605 (Chip) 1 35.91 1N4551 M87PX500 High , M79P-X501 Similar to 1N3600 (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent
-
OCR Scan
2NS007 2N6016 2N3856 2N3856A 2N3416 equivalent D33025 2n8004 diode 2N2222 npn small signal current gain 2N2926 equivalent GET706 GET708 GET914 GET3013 GET3646 GE1705
Showing first 20 results.