1N3600 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 40 of about 40 for 1N3600 |
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1N3600 |
APD Semiconductor, Inc. |
Planar Diodes |
66.16 Kb, 1 Pages. |
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1N3600 |
APD Semiconductor, Inc. |
Planar Diodes, DO-35 Case |
64.5 Kb, 1 Pages. |
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1N3600 |
BKC International |
Silicon Diodes |
57.93 Kb, 1 Pages. |
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1N3600 |
Central Semiconductor |
Silicon Switching Diode, DO-35 Case |
61.1 Kb, 1 Pages. |
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1N3600 |
Compensated Devices Incorporated |
SWITCHING DIODES |
31.35 Kb, 2 Pages. |
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1N3600 |
Crimson Semiconductor |
Silicon Diodes |
32.99 Kb, 1 Pages. |
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1N3600 |
Crimson Semiconductor |
SILICON DIODES |
33.49 Kb, 1 Pages. |
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1N3600 |
Fairchild Semiconductor |
High conductance ultra fast diode. Working inverse voltage 50 V. |
327.81 Kb, 10 Pages. |
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1N3600 |
General Diode |
Silicon Diode Selection Guide |
225.57 Kb, 5 Pages. |
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1N3600 |
General Electric |
Semiconductor Data Book 1971 |
274.87 Kb, 1 Pages. |
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1N3600 |
International Semiconductor, Inc. |
Rectifier Diode, Switching Diode, Single, 75V, SOD-27, 2-Pin |
123.75 Kb, 1 Pages. |
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1N3600 |
Microsemi Corporation |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; IFSM (A): 0.5; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.02; IR ( uA): 0.1; |
62.48 Kb, 1 Pages. |
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1N3600 |
Microsemi Corporation |
Computer Diode 200mA Low Power, Switching |
84.05 Kb, 2 Pages. |
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1N3600 |
Microsemi Corporation |
Computer Switching Diodes |
140.87 Kb, 3 Pages. |
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1N3600 |
Microsemi Corporation |
Signal or Computer Diode |
43.2 Kb, 2 Pages. |
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1N3600 |
N/A |
The Diode Data Book with Package Outlines 1993 |
94.22 Kb, 2 Pages. |
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1N3600 |
National Semiconductor |
Silicon Single Junction Diodes |
108.21 Kb, 1 Pages. |
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1N3600 |
National Semiconductor |
Diodes |
31.56 Kb, 1 Pages. |
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1N3600 |
National Semiconductor |
Diode Data |
135.88 Kb, 1 Pages. |
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1N3600 |
Raytheon Company |
Selection Guide 1977 |
34.41 Kb, 1 Pages. |
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1N3600 |
ROHM Electronics |
Fast Recovery Rectifier / Diode |
31.04 Kb, 1 Pages. |
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1N3600 |
Semitronics Corp. |
Silicon Diodes |
211.74 Kb, 4 Pages. |
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1N3600 |
Silec Semiconductors |
Shortform Data Book 1976 |
61.29 Kb, 1 Pages. |
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1N3600 |
Taitron Components |
Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin |
15.18 Kb, 1 Pages. |
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1N3600 |
Thomson-CSF |
Shortform Semiconductor Catalogue 1982 |
127.2 Kb, 1 Pages. |
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1N3600 |
Thomson-CSF |
Condensed Data Book 1977 |
42.74 Kb, 1 Pages. |
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1N3600 |
N/A |
Shortform Data and Cross References (Misc Datasheets) |
35.63 Kb, 1 Pages. |
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1N3600 |
N/A |
Shortform Electronic Component Datasheets |
70.7 Kb, 2 Pages. |
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1N3600 |
N/A |
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
87.33 Kb, 1 Pages. |
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1N3600 |
N/A |
Semiconductor Devices, Diode, and SCR Datasheet Catalog |
63.28 Kb, 1 Pages. |
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1N3600 |
Motorola |
Motorola Semiconductor Datasheet Library |
132.4 Kb, 1 Pages. |
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1N3600+JAN |
Defense Electronics Supply Center |
200mA Iout, 50V Vrrm Fast Recovery Rectifier |
307.44 Kb, 12 Pages. |
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1N3600JAN |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
40.4 Kb, 1 Pages. |
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1N3600+JANTX |
Defense Electronics Supply Center |
200mA Iout, 50V Vrrm Fast Recovery Rectifier |
307.44 Kb, 12 Pages. |
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1N3600JANTX |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
40.4 Kb, 1 Pages. |
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1N3600+JANTXV |
Defense Electronics Supply Center |
200mA Iout, 50V Vrrm Fast Recovery Rectifier |
307.44 Kb, 12 Pages. |
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1N3600JANTXV |
Fairchild Semiconductor |
Full Line Condensed Catalogue 1977 |
37.22 Kb, 1 Pages. |
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1N3600UR |
Compensated Devices Incorporated |
SWITCHING DIODE |
32.84 Kb, 2 Pages. |
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1N3600UR |
Microsemi Corporation |
DIODE SWITCHING 50V 0.3A 2 pin DO-213AA |
58.67 Kb, 1 Pages. |
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1N3600UR-1 |
Microsemi Corporation |
DIODE SWITCHING 50V 0.3A 2DO-1213AA |
58.67 Kb, 1 Pages. |
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| Fulltext Datasheet Results |
1 - 50 of about 70 for 1N3600 |
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First line: CPD41 High Current Chip Abstract: .. PRINCIPAL DEVICE TYPES 1N3600. 1N4150 1N4150 . CMPD4150 CMPD4150 . GROSS DIE PER 4 INCH WAFER 30,394. PROCESS CPD41 CPD41 .. Tags: CPD41 |
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First line: diode 29 CPD41 High Current Chip Abstract: .. PRINCIPAL DEVICE TYPES 1N3600 1N4150 1N4150 CMPD4150 CMPD4150 . Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 8.0 MILS. Anode Bonding Pad Area 6.5 x 6.5 MILS. Top Side Metalization Al - 30,000Å. Back Side .. Tags: diode 29 1N4150 DIE 1N4150 1N3600 CPD41 |
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First line: MIL-PRF-19500/231 1N3600 1N3600 AVAILABLE JAN, JANTX, JANTXV MIL-PRF-19500/231 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION Abstract: .. • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500 MIL-PRF-19500 /231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION. AC ELECTRICAL CHARACTERISTICS .. Tags: MIL-PRF-19500/231 1N3600 |
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First line: MIL-PRF-19500/231* in3600 1N4150-1 AVAILABLE JAN, JANTX, JANTXV MIL-PRF-19500/231 1N3600 AVAILABLE JAN, JANTX, JANTXV MIL-PRF-19500/231 SWITCHING DIODES HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 1N4150 1N4150-1 1N3600 Junction Temperature: -65°C +175°C Storage Tempe Abstract: .. 1N3600 75 50 0.1 100 2.5 4. 1N4150 1N4150 ,-1 75 50 0.1 100 2.5 4. 37. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE 978 620-2600 FAX 781 689-0803. WEBSITE: http://www.microsemi.com. 1N4150 1N4150 and 1N4150 1N4150 .. Tags: MIL-PRF-19500/231* JANTX 1N4150 IN4150* in3600 1N4150 JANTXV 1N4150 1N3600 1N4150-1 1N3600 |
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First line: 1N4150-1 AVAILABLE JAN, JANTX, JANTXV MIL-PRF-19500/231 1N3600 AVAILABLE JAN, JANTX, JANTXV MIL-PRF-19500/231 SWITCHING DIODES HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 1N4150 1N4150-1 1N3600 Junction Temperature: -65°C +175°C Storage Temperature: -65°C +175° Abstract: .. 1N3600 75 50 0.1 100 2.5 4. 1N4150 1N4150 ,-1 75 50 0.1 100 2.5 4. 22 COREY S T R E E T, MELROSE, MASSACHUSETTS 02176 PHONE 781 665-1071 FAX 781 665-7379. WEBSITE: http://www.cdi-diodes.com E-mail: mail .. Tags: JANTX 1N4150 IN4150* in3600 1N4150 JANTXV 1N4150 1N4150-1 1N3600 |
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First line: Central 1N3600 Semiconductor Corp. SILICON SWITCHING DIODE Adams Avenue, Hauppauge, 11788 Tel: (631) 435-1110 Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers World Class Discrete Semiconductors CENTRAL SEMICONDUCTOR 1N3600, 1N4150, silicon planar epitaxial diode characterized miniature size, ultr Abstract: .. Datasheet Central 1N3600 IN* 150 Semiconductor Corp. SILICON SWITCHING DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 †Fax: 631 435-1824 JEDEC DO-35 DO-35 CASE Manufacturers .. Tags: datasheet abstract.. |
79.59 Kb |
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First line: TND903 DIODE ARRAYS series consists diode arrays packaged 14-pin 16-pin dual in-line plastic packages easy automatic insertion better printed circuit board density. addition diode characteristics standard products shown here, arrays consisting diodes with 1N3070,1N3595, 1N3600, 1N4153, 1N4447 charac Abstract: .. here, arrays consisting of diodes with 1N3070 1N3070 ,1N3595 1N3595 , 1N3600, 1N4153 1N4153 , or 1N4447 1N4447 characteristics can be furnished on request. Other package configurations are available on special order. .. Tags: TND903 datasheet abstract.. |
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First line: M87PX500 DIODE 1N3605 2N2222 chip 1N4532 1N3605* SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS CHIP DRAWINGS Equivalent JEDEC Number Type Description Chip Dwg. Specification Sheet 1N914 Designed high-speed switching general purpos;e applications. 35.88 1N914A 1N914B M46P-X510 35.90 1N3064 M46P Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N3605* 1N4532 2N2222 chip DIODE 1N3605 M87PX500 datasheet abstract.. |
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First line: MIL-PRF-19500/231* Silicon Switching Diodes 1N4150, 1N4150-1 1N3600 Features Available JAN, JANTX, JANTXV MIL-PRF-19500/231 Metallurgically Bonded Hermetically Sealed Double Plug Construction Abstract: .. Silicon Switching Diodes 1N4150 1N4150 , 1N4150-1 1N4150-1 & 1N3600. Maximum Ratings. Operating & Storage Temperature: -65 C to +175 C. Operating Current: 300 mA @ TA = +25 C. Derating: 2.0 mA dc/ C Above TL = + 75 .. Tags: MIL-PRF-19500/231* 1N4150 1N4150-1 1N3600 |
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First line: 1N4147 1N918 1N918* National Semiconductor Diode Data Computer Diodes (Glass Package) Device Package Abstract: .. 5 30 Note 2 D4 1N3064 1N3064 DO-35 DO-35 75 100 50 0.575 0.650 0.710 1.0 0.250 1.0 2.0 10.0 Note 3 D4 1N3600 DO-35 DO-35 75 100 50 0.54 0.66 0.76 0.82 0.87 0.62 0.74 0.86 0.92 1.0 1.0 10.0 50.0 100.0 200.0 2.5 Note 4 D4 .. Tags: 1N918* 1N918 1N4147 datasheet abstract.. |
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First line: NATL SEMICONO DISCRETE Natinal Semicnductr t.SQH3Q 0D3faTia Abstract: .. Note 2 D4 1N3064 1N3064 DO-35 DO-35 75 100 50 0.575 0.650 0.710 1.0 0.250 1.0 2.0 10.0 Note 3 D4 1N3600 DO-35 DO-35 75 100 50 0.54 0.66 0.76 0.82 0.87 0.62 0.74 0.86 0.92 1.0 1.0 10.0 50.0 100.0 200.0 2.5 Note 4 D4 1N4009 1N4009 .. Tags: datasheet abstract.. |
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First line: Process Change Notice Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, chip form. Extent Change: overall reduction area. CPD41 chip process currently measures mils being replaced CPD93V chip process which measures 12.8 12.8 mils. Reason Change: accomm Abstract: .. CPD41-CMPD914-WN CPD41-CMPD914-WN CPD41-1N3600-WN CPD41-1N4148-CT CPD41-1N4148-CT CPD41-1N4150-CT CPD41-1N4150-CT CPD41-1N4150-WN CPD41-1N4150-WN . CMPD4150 CMPD4150 CMHD4150 CMHD4150 BAS56 BAS56 .. Tags: 1N4150 1n4148 die chip 1n4148 die 1N4148 chip CPD41 CPD93V |
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First line: CPD41 Abstract: .. PRINCIPAL DEVICE TYPES 1N3600 1N4150 1N4150 CMPD4150 CMPD4150 . Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 8.0 MILS. Anode Bonding Pad Area 6.5 x 6.5 MILS. Top Side Metalization Al - 30,000Å. Back Side .. Tags: 1N4150 CPD41 |
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First line: IN4150 1N4150 JANTXV JANTX 1N4150 in3600 COMPUTER DIODE 200mA Power, Switching IN3600; JAN, JANTX JANTXV 1N3600 1N4150; JAN, JANTX JANTXV 1N4150 JAN, JANTX JANTXV 1N4150-1 Metallurgical Bond Qualified MIL-S-19500/231 Planar Passivated Chip DO-7 DO-35 Package Abstract: .. COMPUTER DIODE 200mA 200mA Low Power, Switching IN3600 IN3600 ; JAN, JANTX & JANTXV 1N3600 1N4150 1N4150 ; JAN, JANTX & JANTXV 1N4150 1N4150 JAN, JANTX & JANTXV 1N4150-1 1N4150-1 FEATURES †Metallurgical Bond †Qualified to MIL .. Tags: in3600 JANTX 1N4150 1N4150 JANTXV IN4150 datasheet abstract.. |
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First line: M87PX500 1N4532 1N3605* DIODE 1N4087 SILICON SIGNAL DIODES 00;/A 25"C Max. Max. (nsec) Package Type Package Outline Specification Sheet Part Number (ni) Vr(V) If(mA) 1N251 1.00 1N252 1.00 1N461 1.00 1N625 1000 1.E.0 1N62G 1000 1.50 1N814 l.C'O Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: DIODE 1N4087 1N3605* 1N4532 M87PX500 datasheet abstract.. |
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First line: 1N9148 1N4532 SILICON SIGNAL GENERAL PURPOSE AMPLIFIERS SWITCHES Type VcEO 10mA Min. VCE(iat) 10mA TYPICAL (mW) Typical CP*) Typical (MHz) Comments Package Outline Specification Sheet 2N2711 30-90 beta spread, general purpose amplifier, 40.60 2N2712 75-225 non-epitaxial 2N2713 30-90 General purpose Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 1N9148 datasheet abstract.. |
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First line: 1N4532 SILICON SIGNAL DIODES TYPES (Continued) 100^/A Mat. Max. <p<) (nsec) Package Type Package Outline Specification Sheet Part Number (nA) Vr(V) IF(ihA) MA1703 1.00 D034 75.22 MA1704 1.00 D034 75.22 SS321 .880 75.63 SS322 .880 75.63 SS324 75.63 SS325 75.63 Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 datasheet abstract.. |
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First line: 1N3605* Silicon Diodes DO-35 Case TYPE Vrrm (mA) (mA) (ns) (PF) 1N914 1N914B 1N3062 Abstract: .. 20 2.0 1.0 1N3063 1N3063 75 75 0.85 10 4.0 2.0 1N3064 1N3064 75 75 1.0 10 4.0 2.0 1N3065 1N3065 75 75 1.0 10 4.0 2.0 1N3600 50 200 1.0 200 10 2.5 1N3604 1N3604 40 150 1.0 50 2.0 2.0 1N3605 1N3605 75 150 0.88 20 2.0 2.0 1N4148 1N4148 100 150 1.0 10 4.0 4.0 .. Tags: 1N3605* datasheet abstract.. |
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First line: DIODE 1N4001 FAIRCHILD /RECTIFIERS DIODE DICE DESCENDING Basic Chip DEVICE Standard Size Basic Item Device Mils Application FDC3070 1N3070 15x15 High Voltage Switching FDC485B 1N485B 17.5x17.5 High Voltage Leakage FDC3600 1N3600 15x15 General Purpose Switching Abstract: .. 2 FDC485B FDC485B 1N485B 1N485B 200 25 175 1.0 100 500 10 5.0 17.5x17 5x17 .5 High Voltage Low Leakage 3 FDC3600 FDC3600 1N3600 75 100 50 1.0 100 4.0 10 2.5 15x15 15x15 General Purpose Switching 4 FDC4376 FDC4376 1N4376 1N4376 20 100 10 1.1 50 0.8 10 1 .. Tags: DIODE 1N4001 datasheet abstract.. |
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First line: 1N4153 silicon diodes 1N4863 1n914 equivalent 1N3605* 1N3065 Silicon Diodes DO-35 Case TYPE VRRM (mA) 0.85 0.88 0.88 0.88 (mA) (ns) (pF) 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 Abstract: .. 1N3600 50 200 1.0 200 10 2.5. 1N3604 1N3604 40 150 1.0 50 2.0 2.0. 1N3605 1N3605 75 150 0.88 20 2.0 2.0. 1N4148 1N4148 100 150 1.0 10 4.0 4.0. 1N4150 1N4150 50 200 1.0 200 4.0 2.5. 1N4151 1N4151 75 150 1.0 50 2.0 2.0. 1N4152 1N4152 40 150 0.88 20 2.0 2.0. 1N4153 1N4153 .. Tags: 1N3065 1N3605* 1n914 equivalent 1N4863 1N4153 silicon diodes 1N914B 1N4447 1N44* 1N3062 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 |
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First line: 1N3600 1N4148UR-1 1N4532 DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE 3990 COLUMBUS, 43218-3990 REPLY REFER DSCC-VQ (VQE-1 o-019452/Mr. Deslich/614-692-0593/bpd) Abstract: .. *1N4150-1 1N4150-1 *1 N4150UR-1 N4150UR-1 *1N3600. ESD Class 3A. Manufacturer Designation. CHRC. Test Report Reference 19500-2767-10. Prf. Spec /116. /144. /231. Manufacturer Name & Address. Same as above. * Includes .. Tags: 1N4532 1N4148UR-1 1N3600 VQE-1 |
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First line: 1N4532 SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2N Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 datasheet abstract.. |
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First line: 1N4532 SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2N Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 datasheet abstract.. |
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First line: 1N4532 SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 2NSOOO 2N6003 2N6Q02 2N Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 datasheet abstract.. |
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First line: 7320=}^ Sfai ROHVn 1N4150/1N3600 ABSOLUTE MAXIMUM RATINGS: (Ta=25'C) Peak Reverse Voltage Reverse Voltage Peak Forward Current Forward Current Peak Forward Surge Current Total Dissipation Junction Temperature Storage Temperature 'fsm Abstract: .. ■7320=}^ OOOÖ^bD Sfai  RHII ROHVn DIODE 1N4150 1N4150 /1N3600 ABSOLUTE MAXIMUM RATINGS: Ta=25'C Peak Reverse Voltage Reverse Voltage DC Peak Forward Current Forward Current DC Peak Forward .. Tags: datasheet abstract.. |
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First line: d07-15* in3070* SSmOTb 0DDD353 2514096 CRIMSON SEMICONDUCTOR 00353 T'<>3'0J SILICON DIODES Clsa P.I.V. Volts Min. Forward Currint Reversa Current Ra-varsa Voltaga Maximum Ravers* Currant Tamp, Cap. Ra-cov. Tims Powar Dissipation fiA. 1N916 D035 .025 1N916A 0035 .025 1N916B 0035 .025 Abstract: .. 1 50 100 150 2.5 250 1N3600 0035 50 10 .1 50 100 150 1 2 250 IN3604 IN3604 D035 D035 50 .05 50 50 150 2 2 250 1N3605 1N3605 D035 D035 .1 @ ,65V .05 30 50 150 2 2 250 IN3606 IN3606 0035 .1 @ .55V .05 50 50 150 2 2 250 1N4009 1N4009 D07 30 .1 25 100 150 4 2 250 .. Tags: in3070* d07-15* datasheet abstract.. |
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First line: n4148* DIODE LN4148 Diode N4148 SMD diode C5C n4148 Switching Diodes TYPE CASE DESCRIPTION VRRM (VOLTS) <mA) (VOLTS) (mA) (n.) MARKING CODE SIMILAR LEADED DEVICE BAS28 SOT-143 DUAL SWITCHING DIODE, ISOLATED 914/1N4148 SOT-143 DUAL HIGH CURRENT DIODE, ISOLATED SOD-80 LEADLESS SWITCHING DIODE BLACK Abstract: .. CLL4150 CLL4150 soD-eo LEADLESS SWITCHING DIODE 50 250 1.0 200 4.0 BLACK BAND 1N3600/1N4150 1N4150 CLL4448 CLL4448 SOD-SO LEADLESS SWITCHING DIODE 100 200 1.0 100 4.0 BLACK BAND 1N 914B 914B /1N4448 1N4448 CLL5001 CLL5001 SOD-SO INDUCTIVE .. Tags: n4148 SMD diode C5C Diode N4148 DIODE LN4148 n4148* datasheet abstract.. |
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First line: FD700 FAIRCHILD COMPUTER ASCENDING trr) GLASS PACKAGE DEVICE Package Item FD700 0.70 do-7 1N4376 0.75 do-7 Abstract: .. -35 23 1N4449 1N4449 4.0 100 25 20 1.0 30 2.0 do-35 do-35 24 1N3604 1N3604 4.0 75 50 50 1.0 50 2.0 do-35 do-35 25 1N3600 4.0 75 100 50 1.0 200 2.5 do-35 do-35 26 FDH600 FDH600 4.0 75 100 50 1.0 200 2.5 do-35 do-35 27 1N3064 1N3064 4.0 75 100 50 1.0 10 2.0 do-35 do-35 28 .. Tags: FD700 datasheet abstract.. |
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First line: ln4001 BD457 BD458 Discrete Devices Beam Lead Chips (Cont.) Zener Chips 100% Probed Parameters Nominal Ir@VR Zz@lz Mech. Similar Zener Volts Volts Ohms Outline Ident. Type Type Voltage Min. Max. Max. Max. Dwg. Code1 BZ752 1N752 5.04 6.16 BZ752A 1N752A 5.35 5.85 Abstract: .. 1N4148 1N4148 1.0 10 100 100 25 20 7 1 1 DY DY High current and speed BD3600 BD3600 B2D3600 B2D3600 1N3600 1.0 100 60 5 100 50 4 1 1 DA DA BD457 BD457 1N457 1N457 1.2 200 70 100 25 60 — 1 DX High conductance, low leakage BD458 BD458 1N458 1N458 1.2 200 150 .. Tags: BD458 BD457 ln4001 datasheet abstract.. |
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First line: INTERNATIONAL 1171103 00G0301 T^-O0! Silicon Switching Diodes Computer Applications DO-35 Package Peak avg. Power Forward Reverse Rectified Dissipation Voltage Reverse Recoveiy Voltage Current (Po) Drop atlp Current atVR Time (PIV) (VF) Type Volts ffiA Volts Volts BAW75 BAW76 Abstract: .. .0 20 25 20 2 1N916B 1N916B 100 200 500 1.0 30 25 20 2 1N3064 1N3064 75 100 500 1.0 10 100 50 4 1N3600 75 200 500 1.0 200 100 50 4 1N4009 1N4009 35 100 500 1.0 30 100 25 4 1N4148 1N4148 100 200 500 1.0 10 25 20 4 1N4149 1N4149 100 200 500 1.0 10 25 20 4 1N4150 1N4150 .. Tags: datasheet abstract.. |
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First line: THD4004 Diode Array 1N4448 1N914/1N4148* ALLEGRO MICROSYSTEMS 0S0H33fl ELECTRICAL CHARACTERISTICS (BR) c0<" Device Allegro Max. Min. Max. Max. Max. Max. Type Type Description (mA) (mA) ("A) (ns) (PF) Geometry 1N3600 THD3600 General Purpose 0.62 1.0(2> 1N4001 THD4001 Rectifier 1000 10 Abstract: .. Type Type Description mA V V mA "A ns PF Geometry 1N3600 THD3600 THD3600 General Purpose 600 75 0.62 1.0 2> 100 4.0 2.5 TSS 1N4001 1N4001 THD4001 THD4001 Rectifier 1000 50 1.1 1000 10k — — TRJ 1N4002 1N4002 .. Tags: 1N914/1N4148* Diode Array 1N4448 THD4004 datasheet abstract.. |
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First line: INCH-POUND MIL-PRF-19500/231M w/AMENDMENT July 2010 SUPERSEDING MIL-PRF-19500/231M w/AMENDMENT January 2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, 1N3600, JAN, JANTX, JANTXV JANS1N4150-1 superseded MIL-PRF-19500/609 J Abstract: .. , TYPES 1N4150-1 1N4150-1 , 1N4150UR-1 1N4150UR-1 , 1N4150UB 1N4150UB , 1N4150UBCA 1N4150UBCA , 1N4150UBCC 1N4150UBCC , 1N4150UBD 1N4150UBD , AND 1N3600, JAN, JANTX, AND JANTXV. This specification is approved for use by all Departments and Agencies of the .. Tags: 1N4150-1 1N4150UR-1 1N4150UB 1N4150UBCA 1N4150UBCC 1N4150UBD 1N3600 |
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First line: GaAs tunnel diode Germanium diode data sheet 1N914 diode data sheet free download GaAs tunnel diode 1n4148 zener diode IMMEDIATE RELEASE: January 2010 CONTACT: Aeroflex Microelectronic Solutions Teresa Farris MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com Aeroflex Metelics Pete Ciccarelli P Abstract: .. -PRF-19500 -PRF-19500 /116 1N4454-1 1N4454-1 , 1N3064 1N3064 MIL-PRF-19500 MIL-PRF-19500 /144 1N4150-1 1N4150-1 , 1N3600 MIL-PRF-19500 MIL-PRF-19500 /231. Qualification levels for all parts include JAN, JANTX and JANTXV. The company’s manufacturer designation .. Tags: 1n4148 zener diode GaAs tunnel diode 1N914 diode data sheet free download Germanium diode data sheet GaAs tunnel diode 1N4148-1 1N914 1N4531 1N4454-1 1N3064 1N4150-1 1N3600 |
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First line: ACTIVE COMPONENTS HYBRID CIRCUITS COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES CB-115 CB-145 (TM-3) Planar silicon diodes Diodes planar silicium Type Marking Marquage conf. Brochage (mA) (mA) (fA) Equivalent Equivalence CB-145(f) 0,025 CB-145(f) 0,025 A1N914 CB-145(f) 0,025 Abstract: .. mA v / max mA nA / max v Equivalence DE 3600 D I1IV21 I1IV21 CB-115 CB-115 50 500 1 200 100 50 1N3600 DE 914 D 1 VIO CB-115 CB-115 75 500 1__10 25 20 A1N914 A1N914 DE 4148 D 21V11 21V11 CB"k145 k145 150 500 2 10 25 20 A1N4148 A1N4148 1 2 Independent .. Tags: datasheet abstract.. |
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First line: COMPUTER DIODE 200mA Power, Switching JAN, JANTX JANTXV 1N3600 JAN, JANTX JANTXV 1N4150 JAN, JANTX JANTXV 1N4150-1 Metallurgical Bond Qualified MIL-S-19500/231 Planar Passivated Chip DO-7 DO-35 Package Abstract: .. COMPUTER DIODE 200mA 200mA Low Power, Switching JAN, JANTX & JANTXV 1N3600 JAN, JANTX & JANTXV 1N4150 1N4150 JAN, JANTX & JANTXV 1N4150-1 1N4150-1 FEATURES †Metallurgical Bond †Qualified to MIL-S-19500 MIL-S-19500 /231 .. Tags: datasheet abstract.. |
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First line: 1s920 bfiL Silicon Single Junction Diodes (continued) bsoiiao Vrrm Irrm (Volts) Device (nA) (Volts) (mA) (ns) Package* 1N916 DO-35 1N916B DO-35 1S921 DO-35 FDLL4148 LL-34* Abstract: .. 25 1.0 100 DO-35 DO-35 1N5282 1N5282 100 1.3 500 2.0 DO-35 DO-35 75 1N3064 1N3064 100 1.0 10 4.0 D0-35 D0-35 1N3600 100 1.0 200 4.0 DO-35 DO-35 1N4150 1N4150 100 1.0 200 4.0 DO-35 DO-35 1N4151 1N4151 50 1.0 50 2.0 DO-35 DO-35 1N4153 1N4153 50 0.88 20 2.0 DO-35 DO-35 1N4305 1N4305 100 0.85 .. Tags: 1s920 datasheet abstract.. |
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First line: beta transistor 2N2222 1N4532 SELECTOR GUIDE SILICON SIGNAL TRANSISTORS Current Vceo^^ 50/iA 25mA 25mA Voltage 75mA 75mA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 GET914 GET3013 GET3*46 2N6000 2N6002 GET3014 GET3638 GET3638A 2N6001 2N6000 216003 2N6002 GET3014 GET3638 GET3638A 2N6001 Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 beta transistor 2N2222 datasheet abstract.. |
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First line: 1N9148 1N4532 SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Type VCEO (mW) 500mA Min. 10V, 1MHz Max. Typical Package Specification (mA) Min. Max. (Pf) Outline Sheet 2N5810 2N5811 40.88 2N5812 2N5813 40.88 2N5814 2M5815 40.89 2N5816 2M5817 40.89 2N5818 21-15819 40.89 Abstract: .. 35.88 1N914A 1N914A 1 1N914B 1N914B M46P-X510 M46P-X510 35.90 1N3064 1N3064 M46P-X507 M46P-X507 Very high speed 35.89 1N3600 M79P M79P .X506 X506 High conductance and high-speed switching in logic, core, hammer driver circuits and general .. Tags: 1N4532 1N9148 datasheet abstract.. |
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First line: 1N457 equivalent 1n457a equivalent 1N456A* 1N459 equivalent NATL SEMICOND DISCRETE "D113D 0037113 Abstract: .. 1N458 1N458 1N485B 1N485B 1N916B 1N916B 1N4446 1N4446 1N658 1N658 1N458A 1N458A 1N3595 1N3595 1N3064 1N3064 1N4448 1N4448 1N660 1N660 1N459 1N459 1N6099 1N6099 1N3600 1N4449 1N4449 †1N3070 1N3070 1N459A 1N459A FDH300 FDH300 1N4009 1N4009 1N4450 1N4450 1S920 1S920 1N461A 1N461A FDH333 FDH333 < 1N4148 1N4148 1N4455 1N4455 1S921 1S921 1N462A 1N462A 1 Configuration .. Tags: 1N459 equivalent 1N456A* 1n457a equivalent 1N457 equivalent datasheet abstract.. |
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First line: fdh900 FAIRCHILD COMPUTER ASCENDING trr) GLASS PACKAGE DEVICE Package Item FD700 0.70 do-7 1N4376 0.75 do-7 Abstract: .. -35 23 1N4449 1N4449 4.0 100 25 20 1.0 30 2.0 do-35 do-35 24 1N3604 1N3604 4.0 75 50 50 1.0 50 2.0 do-35 do-35 25 1N3600 4.0 75 100 50 1.0 200 2.5 do-35 do-35 26 FDH600 FDH600 4.0 75 100 50 1.0 200 2.5 do-35 do-35 27 1N3064 1N3064 4.0 75 100 50 1.0 10 2.0 do-35 do-35 28 .. Tags: fdh900 datasheet abstract.. |
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First line: AMERICAN POWER DEVICES 0737135 00000H3 /-QArO? PLANAR DIODES DO-35 Case Type Peak Inverse Voltage Minimum Forward Current Maximum Reverse Current Maximum Capacitance Maximum Reverse Recovery Time Dissipation 1N456 1N456A 1N457 1N457A 1N458 .025 .025 .025 .025 .025 1N458A 1N458B 1N619 1N890 1N914 .02 Abstract: .. 5 5 16 @ 100Â C 50 125 60 10 20 10 Typ 4 Typ 4 250 250 250 1N3062 1N3062 1N3064 1N3064 1N3147 1N3147 1N3600 1N3602 1N3602 75 75 60 50 50 20 @ 1 10 @ 1 100 @ 1 200 @ 1 20 @ 1 .100 .100 .100 .100 100 100 20 @ 100Â C 100 100 50 50 30 50 50 1 2 2.5 3 2 4 4 @ 2mA .. Tags: datasheet abstract.. |
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First line: 1n270 DIODES 2040713 QQOQETfl _JULTTON RECTIFIERS OPERATING STORAGE TEMPERATURE type Maximum Peak Reverse Voltage Maximum Average Rectified Current Resistive Load 60Hz Maximum Forward Peak Surge Current 8.3ms Superimposed Maximum Reverse Current Maximum Forward Voltage Cathode Band Color (sur9e) AMP Abstract: .. 1N3064 1N3064 , 1N3600, 1 N4009 N4009 , 1N4150 1N4150 , 1N4152 1N4152 , 1N4153 1N4153 Also Available for Special Order 2. Trr Test Condition: If = 10mA 10mA , Vr = 6V, R|_ = 100ft 100ft Recovery to 1.0 mA. 51 DIODES INCORPORATED 94 D I 2848793 .. Tags: 1n270 datasheet abstract.. |
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First line: LN4149 SEMICONDUCTORS 013bbSD 00DDSS7 Silicon Switching Diodes DO-35 Package ABSOLUTE MAXIMUM RATINGS @250C Storage Operating Power Dissipation.500 CHARACTERISTICS UNLESS OTHERWISE NOTED TYPE EQUIVALENT ""A> 1.0V MAXIMUM REVERSE CURRENT MAX. CAP. (pf) (nsec) AVE. RECTIFIED FORWARD CURRE Abstract: .. 10 .025 lmA j5 20 4 4 1 75 1N4149 1N4149 1N916 1N916 75 X 5 10 .025 .05 20 2 4 1 75 1N4150 1N4150 1N3600 50 100 200 1 0.1 0.1 50 2.5 10 2 150 1N4151 1N4151 1N3604 1N3604 75 5 50 .05 .05 50 2 2 1 150 1N4152 1N4152 1N3605 1N3605 40 5 50 .05 .05 30 2 2 1 150 .. Tags: LN4149 datasheet abstract.. |
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First line: in3070* 1N3606 SILICON DIODES Case P.I.V. Min. Forward Currant Reversa Current Reverse Volt-age Maximum Reverse Current Temp, Cap. Re-cov. Time Power Dissipation 1N916 D035 .025 1N916A 0035 .025 1N916B 0035 .025 1N930 Abstract: .. 1 50 100 150 2.5 250 1N3600 0035 50 10 .1 50 100 150 1 2 "250 1N3604 1N3604 0035 50 .05 50 50 ISO 2 2 250 1N3605 1N3605 0035 ,1 @ ,55V .05 30 50 150 2 2 250 1N3606 1N3606 0035 .1 @ .55V .05 50 50 150 2 2 250 1N4009 1N4009 007 30 .1 25 100 150 4 2 250 .. Tags: 1N3606 in3070* datasheet abstract.. |
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First line: datasheets diode 1n4009 Part CrossReference Power Dissipation d(mW) 1N3600 1N3064 1N4009 1N4146 1N914 1N4152 1N4153 1N4154 1N4454 1N916B 1N4148 1N4151 1N4448 BAW75 BAW76 1N4149 1N4150 1N4305 1N4446 1N4447 1N4449 1N4450 1N5282 1N914A 1N914B 1N916 1N916A 1N6099 1N914A 1N3064 1N914 1N3604 1N914B Max. A Abstract: .. 1N3600 - 200 200 75 100 @ 50 1.0 @ 200 4.00. 1000/10000. 1N3064 1N3064 - 250 100 75 100 @ 50 1.0 @ 10 4.00. 1N4009 1N4009 - 250 100 35 100 @ 25 1.0 @ 30 4.00. 1N4146 1N4146 1N914A 1N914A 250 200 100 25 @ 20 1.0 @ 20 4.00. 1N914 1N914 -. 500. 200 100 25 @ 20 1 .. Tags: datasheets diode 1n4009 fdh333 FD777 FD700 1N914B 1N461A* 1N4009 1N3600 1N3064 1N4009 1N4146 1N914 1N4152 1N4153 1N4154 1N4454 1N916B 1N4148 1N4151 1N4448 1N4149 1N4150 1N4305 1N4446 1N4447 1N4449 1N4450 1N5282 1N914A 1N914B 1N916A 1N6099 1N3604 |
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First line: JANS1N6640 SPECS D0DD125 0033bfi? MILS r--1 [The documentation process conversion |INCH-POUND| necessary comply with this 1--1 |revision shaLl completed MIL-S-19500/231F i--1 September 1993 SUPERSEDING MIL-S-19500/231 March 1992 Abstract: .. SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N3600, 1N4150-1 1N4150-1 , AND 1N4150UR-1 1N4150UR-1 JAN, JANTX, AND JANTXV I I | JANSIN4150-1 JANSIN4150-1 is superseded by MIL-S-19500 MIL-S-19500 /609 | I JANS1N6640 JANS1N6640 see 6.3 and .. Tags: JANS1N6640 datasheet abstract.. |
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First line: FDS04148 National General Purpose Specialty Diodes PLASTIC PACKAGE Surface Mount Diodes Device Description Pkg. (nA) tons Test Cond. Proc. Family FDS01000 FAMILY BASI Single TO-236 1000 0.715 0.855 10.0 (Note BAV70 Common Cathode TO-236 5000 50.0 100.0 (Note Abstract: .. 1N458 1N458 1N485B 1N485B 1N916B 1N916B 1N4446 1N4446 1N658 1N658 1N458A 1N458A 1N3595 1N3595 1N3064 1N3064 1N4448 1N4448 1N660 1N660 1N459 1N459 1N6099 1N6099 1N3600 1N4449 1N4449 †1N3070 1N3070 1N459A 1N459A FDH300 FDH300 1N4009 1N4009 1N4450 1N4450 1S920 1S920 1N461A 1N461A FDH333 FDH333 < 1N4148 1N4148 1N4455 1N4455 1S921 1S921 1N462A 1N462A 1 Configuration .. Tags: FDS04148 datasheet abstract.. |
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First line: Silicon Single Junction Diodes (continued) bS0113G MNSC5 Vrrm Irrm (Volts) Device (nA) (Volts) <mA) (US) Package* 1N916 D0-35 1N916B DO-35 1S921 DO-35 FDLL4148 LL-34* Abstract: .. 25 1.0 100 DO-35 DO-35 1N5282 1N5282 100 1.3 500 2.0 DO-35 DO-35 75 1N3064 1N3064 100 1.0 10 4.0 D0-35 D0-35 1N3600 100 1.0 200 4.0 DO-35 DO-35 1N4150 1N4150 100 1.0 200 4.0 DO-35 DO-35 1N4151 1N4151 50 1.0 50 2.0 DO-35 DO-35 1N4153 1N4153 50 0.88 20 2.0 DO-35 DO-35 1N4305 1N4305 100 0.85 .. Tags: datasheet abstract.. |
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First line: SWITCHING DIODES, GLASS PACKAGE liiSil! Number Power Dissipation lisisgfii Continuous Forward Voltage Drop Capacitance Maximum Reverse Recovery Time Package Quantities Outline (mW) <"A) (Volts) (Volt (mAI (pF) iiiiii Hi/Reel Inches/rtiitllmotefs 1N914 1N914A 1N914B 1N916 1N916A 1N916B 5000 1 Abstract: .. .0 4.0 1000/ 10,000 0 068/0 073 Dn 250 100 5000 75 1.0 1.0 1.0 10 20 100 - 2.0 1N3064 1N3064 1N3600 250 250 75 75 100 100 50 50 1.0 1.0 10 100 2.0 2.5 4.0 4.0 1N4009 1N4009 1N4148 1N4148 1N4149 1N4149 1N4150 1N4150 1N4151 1N4151 1N4152 1N4152 1N4153 1N4153 1N41S4 1N41S4 .. Tags: datasheet abstract.. |
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First line: 1989963 CENTRAL SEMICONDUCTOR W&WZsS** 00432 ITfl^bH 0000435 7-23-0 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80 BRIDGE RECTIFIER: SOT-143 SCHOTTKY RECTIFIER: SOT-89 CENTRAL SEMICONDUCTOR'S surface mounted devices assembled highly automated, quality producti Abstract: .. 0 200 4.0 GREEN BAND 1N3600/4150 CLL4448 CLL4448 SWITCHING DIODE 100 200 1.0 100 4.0 BLUE BAND 1N914B 1N914B /4448 SILICON BRIDGE RECTIFIER, SOT- -143 CASE: VRRM io vF If trr V mA V mA ns TYPE NO. DESCRIPTION .. Tags: Zener Diode 4148 zener T 4148 T 4148 zener 1N914 SOT-23 1N914/4148 datasheet abstract.. |
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Datasheets per page: 50 | 250 | 500 |
| Central Part | Industry Part | Type | Description | | BAS56 Buy | 1N3600 Buy | | SMD Switching Diode Dual | | | CLL4150 Buy | 1N3600 Buy | | SMD Switching Diode Single: High Current | | | CMPD4150 Buy | 1N3600 Buy | | SMD Switching Diode Single: High Current | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description | | 1N4148 | 1N4148 Buy | 1N3600 Buy | Advanced Semiconductor Inc | Close | Small Signal Diode | High Conductance Fast Diode | | | 1N4148 | 1N4148 Buy | 1N3600+JAN Buy | Defense Supply Center Columbus | Close | Small Signal Diode | High Conductance Fast Diode | | | 1N4148 | 1N4148TR Buy | 1N3600+JANTX Buy | Defense Supply Center Columbus | Close | Small Signal Diode | High Conductance Fast Diode | | | 1N4148 | 1N4148TR Buy | 1N3600+JANTXV Buy | Defense Supply Center Columbus | Close | Small Signal Diode | High Conductance Fast Diode | | | 1N4149 | 1N4149 Buy | 1N3600 Buy | Advanced Semiconductor Inc | Close | Small Signal Diode | High Conductance Fast Diode | |
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