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1N276 Datasheet

Part Manufacturer Description PDF Type
1N276 Microsemi Gold Bonded Germanium Diode Original
1N276 American Microsemiconductor Germanium Rectifiers Scan
1N276 BKC International 60 V, 500 mA, gold bonded germanium diode Scan
1N276 Central Semiconductor Scan
1N276 Crimson Semiconductor GOLD BOND DO-7 Diode Scan
1N276 Crimson Semiconductor Gold Bonded Germanium Diodes, DO-7 Scan
1N276 Motorola Motorola Semiconductor Datasheet Library Scan
1N276 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N276 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N276 N/A Basic Transistor and Cross Reference Specification Scan
1N276 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N276 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N276 Semitronics Germanium Diodes Scan
1N276 Thomson-CSF Condensed Data Book 1977 Scan
1N276 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
1N2762 Motorola Motorola Semiconductor Datasheet Library Scan
1N2762 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N2762 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N2762 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N2763 Motorola Motorola Semiconductor Datasheet Library Scan
Showing first 20 results.

1N276

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1N276 w w w. c e n t r a l s e m i . c o m GERMANIUM SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N276 is a gold bonded germanium diode mounted in a hermetically sealed glass case, designed for switching applications. MARKING: FULL PART NUMBER DO-7 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM DC Forward Current IF 50 , ) 1N276 GERMANIUM SWITCHING DIODE DO-7 CASE - MECHANICAL OUTLINE SYMBOL A B (DIA) C D (DIA Central Semiconductor
Original
diode germanium 1n276
Abstract: ~ MI L-S-19500/1928 AMEN OMENT 1 14 November 1990 I The documentation and process I conversion measures necessar to I comply with this amendment s{1 all I be completed by 14 February 1991 I MILITARY SEMICONDUCTOR TYPE SPECIFICATION OEV ICE, OIOOE, GERMANIuM, SUIT CHING 1N276, JAN, JANTX, ANO JANTx V This amendment forms a part of MI L-S-19500/1928, dated 6 October 1989, and is approved for use by all Departments and Agencies of the Department of Oefense. PAGE TABLE 1 -
Original
Abstract: Germanium Diodes* DO-1 and DO-7 Cases DO-1 DO-7 TYPE WO, CASE vrrm io (mA) MAX 50 50 50 50 150 150 150 100 50 50 100 40 100 100 50 200 100 200 200 VF (Vi MAX 1.0 1.0 1.0 0.25 0.45 0.45 0.45 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ® »F trr (n*) MAX TECHNOLOGY 00 MAX 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 '1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO -
OCR Scan
1N93
Abstract: 1N276 DO-7 50 40 1.0 40 300 GOLD BONDED 1N277 DO-7 100 100 1.0 -
OCR Scan
Abstract: 1.0 200 100 50 - 1N276 100 1.0 40 100 50 300 1N277 125 1.0 100 250 50 - 1N278 60 1.0 20 125. @ Ta = -
OCR Scan
AA117 AA118 AA144 AAZ13 AAZ15 AA218 OA47 germanium diode aa118 1N695 AA121 AA130 AA143
Abstract: -50 V 1N118A 75 70 40 100 al-50V 1N126A 75- 30 5 850 at -50V 1N270 100 90 200 100 at-50V 1N276 100 -
OCR Scan
1N34GB 1N55A 1N96A 1N98A 1N949 diodo Zener 4.1v 1n118 1N99 1N98 1N117 1N118
Abstract: GOLD BOND TYPE PEAK REV ER SE VO LTAG E VO LTS AVERAGE FO RW ARD CURRENT mA 50 50 30 70 60 60 60 70 30 60 70 30 90 60 75 75 100 100 75 M I N IM U M FO RW ARD CURRENT A T 1 VO LT mA 5 4 20 40 20 40 10 40 10 20 40 5 200 40 100 100 2 00 10 at .39 V, 15 at ,5V M A X IM U M REV ER SE CURRENT A T 25°C 1N34G B 1N55A 1N96 1N96A 1N 9 8 1N98A 1N 9 9 1 N 1OOA 1N 117 1N118 1N118A 1N 126A 1N270 1N276 1N 277 I N 281 I N 2 83 1 N 9 49 1N 3 5 2 9 75 170 75 75 TOO 100 100 100 75 75 75 75100 -
OCR Scan
Abstract: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE VRRM (V) MAX io (mA) MAX 50 50 50 50 150 150 150 VF (V) MAX 1.0 1.0 1.0 0.25 0.45 0.45 0.45 @ if (m A) trr (ns) MAX TECHNOLOGY 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 75 100 90 23 100 200 300 5.0 5.0 5.0 1.0 150 150 150 - . . . . . . -
OCR Scan
CDSH270
Abstract: a Gold Bonded 1N276 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices Applications â'¢ AM/FM detectors â'¢ Ratio detectors â'¢ FM discriminators â'¢ TV audio detectors â'¢ RF input probes DO-7 Glass Package 0.018-0.022" 0.458-.558 mm â'¢ i., . L n it i i TV video detectors < Features (Min.) â'¢ 2.16-2.71 mm 5.85-7.62mm -
OCR Scan
Abstract: B K C INTERNATIONAL 30E D 1 1 7 ^ 0 3 D0Q0330 h O 3 .-O7 FEATURES · · · Solder plate DO-7 package Very low noise level Non-ESD sensitive (>15 KV) Gold Bonded Germanium Diode 1N276 o SPECIAL FEATURES · Thirty years of proven reliability « Ideally suited for schottky diode replacement; " · Low forward voltage drop - low power consumption % & RELIABILITY DATA · One million hours mean time between failures (MTBF) · Passes all mechanical and environmental requirements of MIL-S -
OCR Scan
Germanium Schottky diode DSAIH0002536 MIL-S-19500
Abstract: Gold Bonded 1N276 Germanium Diodes Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications AM/FM detectors DO-7 Glass Package Ratio detectors FM discriminators 0.018-0.022" TV audio detectors 0.458-.558 mm RF input probes TV video detectors Features 1.0" 25.4 mm (Min.) Length Dia 0.230-0.30" 5.85-7.62mm 0.085-.107 " 2.16-2.71 mm Lower leakage current Flat junction capacitance Microsemi
Original
germanium diodes 1n276 germanium diodes forward drop gold detectors fM detectors gold detectors circuit IR Detectors
Abstract: OA95 * OA99 * 45 1N34A 60 1N38A 100 1N60A 40 1N100A 80 1N270 100 100 1N276 1N277 125 20 1N695 25 -
OCR Scan
AA119 AA138 1N3592 AA119 leakage current OA91 OA91 DIODES OA90 AA113 AAZ17 AAZ18 1N695A
Abstract: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 VRRM (V) MAX 75 100 90 23 100 200 300 80 90 70 80 50 100 20 40 80 20 20 25 IO VF @ IF trr TECHNOLOGY (mA) (V) (mA) (ns) MAX MAX MAX 50 1.0 5.0 Central Semiconductor
Original
1N91 DATASHEET DO-7 Diode Equivalent 1N34A 1N92 1N91 1N91 diode
Abstract: I1IL SPECS IC |GDDG15S GDSVETb 1 | I INCH-pound~T MIL-S-19500/192B 6 October 1989 SUPERSEDING- MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail , , diode, type 1N276 (D0-7). 3 NIL SPECS IC|DDDQ125 OOETS^ 7 | MIL-S-19500/192B 4. QUALITY ASSURANCE -
OCR Scan
4026 IC CI 4016 ci 4081 ic 4081 in276 IR411
Abstract: M Part Number 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 thru 1N759A-1 1N914 1N962B-1 thru 1N973B-1 1N 974B & -1 thru 1N 992B & -1 1N3070/1 N3070-1 1N3287 1N3595/1 N3595-1 1N 3666 (1 & 2 ) 1N4099, C, D, & -1 thru 1N4121, C, D, & -1 1N4148-1 1N415 0 /1 N 4150-1 1 N4153/1N4153-1 ilitary Qual Level JAN, JAN TX, JAN TX V JAN, JAN TX, JAN TX V JAN, JAN TX, JAN TXV JAN, JAN TX, JAN TXV JAN, JAN TX, JAN TXV JAN, JAN TX, JAN TXV JAN, JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN, JAN TX, JAN TXV JAN, JAN -
OCR Scan
DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N270 JAN 1N5619 JAN 1N4454/1N4454-1 1N4496 1N4625 N4627 1N4938/1N4938-1 1N4957
Abstract: 100 1.0 200 . GOLD BONDED 1N276 DO-7 50 40 1.0 40 300 GOLD BONDED 1N277 DO-7 100 100 1.0 100 . -
OCR Scan
diodes 1N34A DO 1 diode 1n60 DO-1 1N60 1n34a diode
Abstract: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 (HlA) MAX 50 50 50 50 150 150 150 100 50 50 100 40 100 100 50 200 100 200 200 VF (V) MAX 1.0 1.0 1.0 0.25 0.45 0.45 0.45 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ® IF (mA) trr (ns) MAX TECHNOLOGY (V) MAX 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO -
OCR Scan
Abstract: B I C C INTERNATIONAL 30E D H7nfl3 00003Q0 6 'T-01-0"7 Q erm anium d i o d e s B B B 3 Gold Bonded Germanium Diodes in DO-7 Package Forward Voltage Drop (Vp) Reverse Current (I r ) Reverse Recovery Time (t,) Peak Inverso Vottao« (PIV) at Ip a tV R Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276 1N277 1N278 1N527 1N695 1N695A 1N949 1N995 1N996 1N3466 -
OCR Scan
1N3467 1N3469 1N34A do-35 OA47 1N34A reverse recovery AA143 oa90 1N60 LL 34 1N3773 DO-34 DO-35 DO-41
Abstract: Index Part Number 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 thru 1N459 1N456A thru 1N459A 1N461A thru 1N463A 1N482B thru 1N486B 1N486 1N645 1N647 1N649 1N658thru 1N661 1N695 1N695A 1N746A thru 1N759A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N933 1N949 1N957B thru 1N992B 1N3064 1N3070 1N3287 1N3592 1N3595 1N3600 1N3611 thru 1N3614 1N3666 1N3773 1N4001 thru 1N4004 1N4009 1N4099 thru 1N4135 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4156 1N4157 1N4245 thru 1N4249 1N4446 thru 1N4450 1N4454 1N4463 thru -
OCR Scan
Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 1N658 1N4607 1N4608 1N4624 1N4627 1N4661
Abstract: 1.0 4 500 75 1N273 35 1.0 100 20 20 1N502 115 0.8 100 20 100 1N58A 125 1.0 5 600 100 1N276 75 1.0 40 -
OCR Scan
1N450 1N451 IN452 1N126 1N305 1N306 1N48 zener 1N770 1N418 1N104 IN108 1N453
Abstract: q l_l r NCH-POUNO MIL-S-19500/192B 6 October 1989 141L-S-19500/192A 19 Aprfl 1968 MILITARY I SPECIFICATION SEMICONOUCTOR DEVICE, OIOOE, GERMANIUM, WITCHING TYPE 1N276, JAN, JANTX, AND JANTXV I This specification Agencies of the 1. is approved Department of for use Defense. by all Oepartmnt$ and SCOPE I This levels j;~~~l~~ 1.2 , , type 1N276 (00.7). len9th. to MI L-s- 4. QUALITY 4.1 and as ASSUNANCE -
OCR Scan
germanium transistors NPN 2N404 2N1303 1N64 1N128 2N388 0UTS10E
Abstract: I1IL SPECS IC |GDDG15S GDSVETb 1 | I INCH-pound~T MIL-S-19500/192B 6 October 1989 SUPERSEDING- MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail , , diode, type 1N276 (D0-7). 3 NIL SPECS IC|DDDQ125 OOETS^ 7 | MIL-S-19500/192B 4. QUALITY ASSURANCE -
Original
JVR 431 0.7 A145C t41l thermal 141L VR-10V NECESS41
Abstract: Diodes Operating Temperature: -55oC to 70 oC 1N100A 1N270 1N276 1N277 1N278 1N3466 1N3467 -
OCR Scan
1N348
Abstract: Index Part Number 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 thru 1N459 1N456A thru 1N459A 1N461A thru 1N463A 1N482B thru 1N486B 1N486 1N645 1N647 1N649 1N658thru 1N661 1N695 1N695A 1N746A thru 1N759A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N933 1N949 1N957B thru 1N992B 1N3064 1N3070 1N3287 1N3592 1N3595 1N3600 1N3611 thru 1N3614 1N3666 1N3773 1N4001 thru 1N4004 1N4009 1N4099 thru 1N4135 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4156 1N4157 1N4245 thru 1N4249 1N4446 thru 1N4450 1N4454 1N4463 thru -
OCR Scan
1N222
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