First line: 0258354 ADVANCED SEMICONDUCTOR 00063 ADVANCED SEMICONDUCTOR Slum diodes Point Contact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable Coaxial, Abstract: .. 11.3 K 1N26B 1N26B 1N26BR 1N26BR 1N26BM 1N26BM IN2BBMR 1.5 11.0 K 1N26C 1N26C 1N26CR 1N26CR 1N26CM 1N26CM 1N26CMR 1.5 9.5 D07 i l /— I 15.84/ .300 M r .085 .105 Í—I 12.16/ GM55 GM55 ffil -1.0 MIN—ft ic T .019 .021 TWO PLACES 0.533 j 10.483/ 1. Outside .. Tags: 1N26B1N26diode 1N78A30601N3745datasheet abstract..
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First line: 1N26 D037 in2510 1N3745 in23c IION POINT ONTAT MIXER OlOOE Point ontact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable oaxial, Waveguide triplAbstract: .. 11.3 K 1N26B 1N26B 1N26BR 1N26BR 1N26BM 1N26BM 1N26BMR 1N26BMR 1.5 11.0 K 1N26C 1N26C 1N26CR 1N26CR 1N26CM 1N26CM 1N26CMR 1.5 9.5 D07. 1 1—1 15.841 .230 .300 M T m .105 Í—I 2.16/ H GLASS 125} -1.0 MIN.—f TWO PLACES T c T .019 .021 TWO PLACES /0.533 J .. Tags: in23c1N3745in2510D0371N26datasheet abstract..