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1N251 Datasheet

Part Manufacturer Description PDF Type
1N251 BKC International General Purpose Silicon Diodes, DO-35 Scan
1N251 General Diode Germanium Diodes, DO-7 Case Scan
1N251 General Electric Semiconductor Data Book 1971 Scan
1N251 Microsemi General Purpose Computer Diode Scan
1N251 Motorola Motorola Semiconductor Datasheet Library Scan
1N251 N/A GE Transistor Specifications Scan
1N251 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N251 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N251 N/A Shortform Electronic Component Datasheets Scan
1N251 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
1N251 N/A Silicon Diode Scan
1N251 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N251 ZaeriX Short Form Data Catalogue 1972-73 Scan
1N2510 Motorola Motorola Semiconductor Datasheet Library Scan
1N2510 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
1N2510 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1N2510 N/A Silicon Point Contact Mixer Diodes Scan
1N2510 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
1N2510M N/A Silicon Point Contact Mixer Diodes Scan
1N2510M N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

1N251

Catalog Datasheet MFG & Type PDF Document Tags

1N251

Abstract: mCROSEMI CORP/ ÙIATERTOUN COMPUTER DIODE General Purpose SDE D â  T347clii3 GGlSaMT bfc.T â UNIT 1N251 JAN 1N251 ABSOLUTE MAXIMUM RATINGS, AT 25°C Peak Reverse Voltage , Reverse Current Reverse Current @ 125°C Forward Voltage Reverse Recovery Time 1N251 20/iA @ Vr = 20V 0.1 , , Irec = 0.5mA JAN 1N251 100//A @ Vr = 30Vdc .1 /iA @ Vâ'ž = 10V 10/iA @ 10V T»= 100°C IV @ If = 10mA 30ris If =10mA, In =10mA Rl = 1000, C = 4pf MECHANICAL SPECIFICATIONS JAN 1N251 00-7 1N251 II Â
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OCR Scan
MIL-S-19500/188 10//A

1N251

Abstract: COMPUTER DIODE General Purpose A B SO LU T E M AXIMUM RATINGS, A T 25°C FEATU RES 1N251 JAN 1N251 Peak Reverse Voltage . .40V Reverse W orking Voltage .30V Average R ectified Current . Surge , O fi, C = 4pf 1N251 If < " JA N 1N251 100//A @ V B = 30Vdc If IV @ = 10m A
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OCR Scan

1n914 equivalent

Abstract: 1N3067 1N3603 1N 4148 JAN 1N 4148 J A N T X 1N659 1N814 1N251 JA N 1N251 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0
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OCR Scan
1N5318 1N3067 1N4950 1n914 equivalent 1N4009 equivalent 1N5319 1n903 1N4150 1N4305 1N4322 DO-35 DO-34 1N3064

FD6666

Abstract: FD6666 equivalent 1N3602 1N3603 1N4148 JAN 1N659 1N814 1N251 JAN 1N251 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0
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OCR Scan
JAN1N486B JAN1N969B JAN1N4307 FD6666 FD6666 equivalent JANTX2N918 JANTX2N2222A TRANSISTOR+TCD+100+LS JAN1N251 JAN1N457 JAN1N458 JAN1N459 JAN1N483B JAN-TX1N483B

mc 4011

Abstract: working of 4011 IC MIL SPECS 0000155 0002504 T | MIL-S-19500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE JAN-1N251 This amendment forms a part of Military Specification MIL-S-19500/188A, dated 9 October 1963, and is approved for use by all Departments , SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPE JAN-1N251 This specification has been approved by the , diameter shall be 0.130. Figure 1. Semiconductor device, diode, type JAN-1N251. 5
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OCR Scan
mc 4011 working of 4011 IC 220L3 mc 4016 B ic military part marking symbols jan ic 4016 JAN-1N251 0DD550S MIL-STD-750 MIL-S-19500

1N34A reverse recovery

Abstract: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S ) r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage (volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 â'C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge Ge Ge Si 75 40 40 80 30 1.0 1.0 1.0 1.0 1.0 5.0 5.0 3.0 4.0 5.0 30 60 10 50 .10 1N270 1N277 1N695A 1N772A 1N933 Ge Ge Ge Ge * Ge 100 125 25 80 100
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OCR Scan
1N34A reverse recovery 1N995 1N3287 1N3483 1N3604 1N3666 1N4242

MC 4066

Abstract: MIL-S-l9500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE. SILICON. SWITCHING TYPE JAN-1N251 This amendment forms a part of Military Specification MIL-S-19500/188A, dated 9 October 1963, and is approved for use by all Departments and Agencies of the Department of Defense. PAGE 1 1.2 Ratings, TQp and Tst , maximum: Delete "+100" and substitute "+175". PAGE 2 4.4.2: Delete in its entirety. PAbt t TABLE 11, group B inspection , subgroup 4: Delete Surge current
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OCR Scan
MC 4066 9500/188A

1N661

Abstract: DSAIH000251 0 K C IN T E R N A T IO N A L 30E D 1171163 0000302 1 " p 0 3 "O°j BKC 2000 Series P eak Inverse VoHage (PIV) * General Purpose Silicon Diodes in DO-35 Package Max Power Disslpation-(PQ) Forward Voltage Drop (VF) R everse Current O r) Max avg Rectified Current (l0 ) (l0 ) Reverse Recovery at Ip '^fne Crr) Type BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 1N661 Volts 20 25 60 40 30 70 50 100 120 60 120 240 mA
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OCR Scan
DSAIH000251 BKC300 BKC333 1N456 1N456A 1N457 1N457A

1N626

Abstract: BA170 B K C INTERNATIONAL 3QE , â'ž U711M D0B0302 t â â H BKC 2000 Series ♦ General Purpose Silicon Diodes in DO-35 Package â â â  Peak Maxavg Forward Reverse Invars« Rectified Max Power VoHage Reverse Recovery VoHage Current (l0) Dissipation (Pq) Drop at lp Current atVR Time (PIV) do)
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OCR Scan
1N458 hep silicon diode 1N459a 1N458A 1N459 1N459A 1N482B 1N3595

IN5551

Abstract: 1N4148 75v 150mA diode MICROSEMI CORP/ lilATERTOülN SDE T> PART NUMBER INDEX 13M7^b3 ÃDima 275 «UNIT7^/-*? PART NUMBER DESCRIPTION PART NUMBER DESCRIPTION 1N251, J 1N456 1N456A 1N457, J 1N457A 1N458, J 1N458A 1N459, J 1N459A IN 483 IN483A 1N483B, J, JTX 1N483C 1N485 1N485B, J, JTX 1N643, J 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 1N662, J 1N663, J 1N914, J, JTX 1N914-1, A, B 1N916, B IN3064J, JTX 1N3070, J, JTX 1N3595, J, JTX, JTXV 1N3600, J, JTX, JTXV 1N3611, J, JTX 1N3612
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OCR Scan
1N5118-1N5134 IN5550 IN5551 1N4148 75v 150mA diode zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode 1N3613 1N3614 1N4096-1N4098 1N4148-1J 1N4149 1N4150-1J

GEX66

Abstract: OA71 0.20 HD5000 10 12 S (Switching) 0.10 1N198 _ 80 30 G 0.15 HG5093 40 100 G/GB 0.10 1N251 _ 40 120 S
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OCR Scan
GEX66 AAZ12 AAZ15 CV2279 D223A GEX54 OA71 OA81 d223b OA73 GEX941 GEX951 HS1012 1N483 HSP1007

D07 15

Abstract: 1N814 SILICON SIGNAL DIODES BV (S> 1 00;/A Ir
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OCR Scan
1N252 1N461 1N625 1N903A 1N904 1N3068 D07 15 1N3069 1N4532 1N62G
Abstract: I I ' m ech an ical d a ta TYPE 1N251 SILICON SWITCHING DIODE M EDIUM-SPEED SWITCHING DIODE · Rugged Double-Plug Construction [_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ BU LLETIN NO. DL-S 739094, S EP TEM BE R 1 9 6 6 - RE V ISED M A R C H 1973 Double-plug construction affords integral positive contact by means of a thermal compression bond. Moisture-free stability is ensured through -
OCR Scan
256-JAN

1N813

Abstract: ) @25°C @125°C 1N251 (617) 872-7520 F orw ard P eak C o n tin u o u s A v erag e F o rw a rd
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OCR Scan
1N813 10-1O 1N811

diode D07-15

Abstract: diode d07 SILICON SIGNAL DIODES BV (S> 1 00;/A Ir
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OCR Scan
1N3605 diode D07-15 diode d07 DIODE 1N4087 1N9148 2N2222 chip 1N914A 1N914B 1N91G 1N916A 1N916B 1N3062

1n45b

Abstract: 1N48 diode â'"DO-7 TYPE 1N251* 1N252. IN 432' 1N434 1N458 1N456A 1N457* IN457A 1N45B* 1N458A 1N459* 1N459Ã
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OCR Scan
1N38B 1N48 diode T11G T26G IN283 T13G DIODE 1N418 L1750 1N52A 1N54A 1N63A 1N66A

IN3599

Abstract: 1N9168 1H221 390 4.0 2.0 5 100(2) 390 2.6* _ 150 C-l 1N222 470 4.0 1.5 5 100 (2) 470 2.4* 150 C-l 1N251 30
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OCR Scan
1N203 1N20S 1N207 1N209 IN3599 1N9168 IN485 IN625 1N4389 1N194A 1N195 1K200 1N201 JN202

2N2222A mps

Abstract: 2N512AB .A.B 1N251.A 1N252.A 1N253/ 1N256 1N265/ 1N268 1N270 1N273 1N276 1N277.M 1N278 1N279 1N281 1N282 1N283 1N287 , / 1N2490 1N2491/ 1N2494 1N2495 1N2496 1N2497 1N2498 1N2499 1N2500 1N2501/ 1N2508 1N3512/ 1N2517 1N2524
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OCR Scan
1N120 1N445 1N589 1N2637 2N2222A mps 2N512AB 2n2222 mps 1N1096 2N698 SCR 1n4007 - 2n4001 1N44/ 1N55AB 1N100 1N102 1N103 1N104

1N4548

Abstract: 1N4008 1N198B 1N198M 1N251 1N251A 1N252 1N252A 1N265 1N266 1N267 1N268 1N270 1N273 1N276 1N277
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Original
1N1744A 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N523b 1N100A 1N101 1N108 1N111 1N112 1N113

BA100 diode

Abstract: BA102 -127-147/50-167-170-187, BAW75, BAX 13, BAY 18-60-61-86, 1N251-914-4446/7/8/9, 1S180. BAY89, BYX10, 1N4005. BAY90, BYX10 , -117-127-147-170-180, BAX13, BAY61, FDH999, 1N914-4446/7/8/9, 1S184. BA143-152-177-182. BA 100-127-147-170, 1N251-914, 1S180, BAY61. BA100-127-147-170, 1N251-914, 1S180, BAY61. 1N4148, BA127, BAY61. BA100-1 27-147-181, BAX16, BAY , , BB103, 1M5472. BA102-111-119-124-216, TN5475. BA100-117-12'7-147-17CM80-181-216, FDH099, 1N251, 1S184. I , , BAY61. BA209, BAX13, 1N914, BAY61. BA100-181A. FDH999, SAY32, 1N251, BAW75, 'â  BAY61. ' BAX89A BA209
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OCR Scan
BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 A4/10 A5/62 A5/105 A1000 AA100 AA110

407B

Abstract: DG406B SILICON SIGNAL DIODES BV (S> 1 00;/A Ir
Vishay Siliconix
Original
DG406B DG407B 407B DG406B/407B S-32513--R
Showing first 20 results.