1N23HM Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 4 of about 4 for 1N23HM |
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1N23HM |
Advanced Semiconductor, Inc. |
Silicon Point Contact Mixer Diodes |
346.22 Kb, 8 Pages. |
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1N23HM |
MicroMetrics, Inc. |
RF Mixer Diode, PN Mixer, UHF|SHF, Case Style |
149.54 Kb, 2 Pages. |
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1N23HMR |
Advanced Semiconductor, Inc. |
Silicon Point Contact Mixer Diodes |
346.22 Kb, 8 Pages. |
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1N23HMR |
MicroMetrics, Inc. |
RF Mixer Diode, PN Mixer, UHF|SHF, Case Style |
149.54 Kb, 2 Pages. |
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| Fulltext Datasheet Results |
1 - 3 of about 3 for 1N23HM |
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First line: 1N23FR* 1N23WGMR 1N21WE 1n21gr 1N26 ALPHA SEMICONDUCTOR 4flE DGGllb3 Silicon Point Contact Mixer Diodes High Burnout Resistance Noise Figure, even Starved L.O. Mode Hermetically Sealed Alpha's point contact mixer diodes designed applications through Ka-band GHz). These diodes employ epitaxial silico Abstract: .. 1N23H 1N23H 1N23HR 1N23HR 1N23HM 1N123HMR 1N123HMR 6.0 005-802 — 2.0 335 465 1.3 1N415H 1N415H 1N415HM 1N415HM 1N415HMR 1N415HMR 6.0 005-801 .. 2.0 335 465 1.3 1N23G 1N23G 1N23GR 1N23GR 1N23GM 1N23GM 1N23GMR 1N23GMR 6.5 005-802 .. 2.0 335 465 1.3 1N23WG 1N23WG 1N23WGM 1N23WGM 1N23WGMR 1N23WGMR .. Tags: 1N26 1n21gr 1N21WE 1N23WGMR 1N23FR* datasheet abstract.. |
706.05 Kb |
7 Pages |
OCR Scan |
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First line: 0258354 ADVANCED SEMICONDUCTOR 00063 ADVANCED SEMICONDUCTOR Slum diodes Point Contact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable Coaxial, Abstract: .. .5 X 1N45ID 1N45ID IN415DM IN415DM 1N4I5GMR — 6.5 X 1N832C 1N832C 1N832CM 1N832CM — 6.5 X 1N23H 1N23H IN23HR IN23HR 1N23HM IN23HMR IN23HMR — 6.0 X 1N415H 1N415H 1N45IHM 1N45IHM 1N415HMR 1N415HMR — 6.0 Vt 0258354 ADVANCED SEMICONDUCTOR " 7 82D 00068 ' D ^07-Ö "7 ADVANCED SEMICONDUCTOR .. Tags: in26 in23we IN21D datasheet abstract.. |
351.29 Kb |
8 Pages |
OCR Scan |
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First line: IN230 IN26* 1N21C* IN23C 1N23F IION POINT ONTAT MIXER OlOOE Point ontact Mixer Diodes designed applications from through GHz. They feature high burnout resistance, noise figure hermetically sealed. They available DO-7, DO-22, DO-23 DO-37 package styles which make them suitable oaxial, Waveguide trip Abstract: .. 1N23WDMR 1N23WDMR 1N415GMR 1N415GMR — 6.5 6.5 6.5 £5 X X 1N23H 1N23H ÃŒN23HR N23HR 1N4I5H 1N23HM IN45IHM IN45IHM ÃŒN23HMR N23HMR 1N415HMR 1N415HMR — 6.0 6.0. Bl ELECTRICAL CHARACTERISTICS TEST CONDITIONS BURNOUT ERGS Z,f2 OHMS VSWR MAX CONVERSION LOSS .. Tags: 1N23F IN23C 1N21C* IN26* IN230 datasheet abstract.. |
364.72 Kb |
8 Pages |
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