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Part : 1MBI300NN-120 Supplier : Fuji Electric Manufacturer : Allied Electronics & Automation Stock : - Best Price : $135.57 Price Each : $154.34
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1MBI300N- Datasheet

Part Manufacturer Description PDF Type
1MBI300N-120 Fuji Electric IGBT MODULE(N series) Original
1MBI300N-120 Fuji Electric IGBT Module Original
1MBI300NA-120 Fuji Electric IGBT MODULE(N series) Original
1MBI300NA-120 Fuji Electric IGBT MODULE Original
1MBI300NM-120 Fuji Electric 1MBI300NM-120,1MBI300NP-120 Scan
1MBI300NN-120 Fuji Electric IGBT MODULE(N series) Original
1MBI300NP-120 Fuji Electric IGBT MODULE(N series) Original

1MBI300N-

Catalog Datasheet MFG & Type PDF Document Tags

1MBI300SA-120

Abstract: 1MBI400JN-120-01 0.069 M116 Discontinued Sub 1MBI300N- PDF 120 1MBI300JN120-01 1200 0 300 0 0 M122 Discontinued Sub 1MBI300N- PDF 120 1MBI300JN-140 1200 0 300 0 0 M122 , PDF 1MBI300N-120 1200 3.3 300 2100 0.06 M127 Active - UL Approved PDF 1MBI300NN120 1200 3.3 300 2100 0.06 M129 Active - UL Approved PDF IGBT MOSFET , Discontinued No Sub PDF Discontinued Sub 1MBI300N- PDF 120 Fuji Semiconductor Inc. Product Search
Fuji Electric
Original
1MBI200S-120 1MBI50L-060 1MBI300SA-120 1MBI400JN-120-01 1MBI400JN-120 1MBI300SA120 M237 1mbi400jn120 1MBI200F-120 1MBI200L-120 1MBI200N-120 1MBI200SA120 1MBI300F-060

6DI15S-050

Abstract: 1MB1400N-120 1MBI200L-120 1MBI200N-120 1MBI300F-060 1MBI300F-120 1MBI300L-060 1MBI300L-120 1MBI300N-120 1MBI300NN-120 1MBI300NP-120 1MBI400F-060 1MBI400L-060 1MBI400L-120 1MB1400N-120 1MBI400NN-120 1MBI400NP-120 1MBI600LN-060
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OCR Scan
6DI15S-050 6D130Z-120 2sk2850 ENC471 6DI15S050 2sk2761 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100
Abstract: 1MBI300N120 Transistors Independent IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)2.0k Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.16 I(CES) Min. (A) @V(CES) (V) (Test Condition) I(GES) Max. (A) @V(GES) (V) (Test Condition) V(CE)sat Max. (V)3.3 @I(C) (A) (Test Condition)300 @V(GE) (Test Condition)15 V(GE)th Max. (V) @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

mp2a5100

Abstract: ya868c12 1MBI300NP-120 1MBI300NN-120 1200V / 300A 1 in one-package Features · High speed switching · , Collector current : Ic [A] 600 1MBI300NP-120 / 1MBI300NN-120 IGBT Module Switching time vs. RG Vcc , Collector-Emitter voltage : VCE [V] 1200 Gate-Emitter voltage : VGE [V] 1MBI300NP-120 / 1MBI300NN-120 IGBT , which is defined mounting on the additional cooling fin with thermal compound 1MBI300NP-120 / 1MBI300NN-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C IGBT
Fuji Electric
Original
mp2a5100 ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 RH011 2007-10B120FIS
Abstract: â  22307^2 OOOB^E: bö? â  THIRD GENERATION IGBT (§ 1200 VOLT, N-SERIES SINGLE MODULES â'¢ 200 - 600 Amp Device Vge=15V Switching Time (Max.) Collector Pc VcE(sat) PeriGST Max. lc ton toff Volts 1MBI200N-120 1MBI300N-120 1MBI300NN-120 1M BI300NP-120 1MBI400N-120 1MBI400NN-120 1M BI400NP-120 1MBI600P-120 Amps Watts Volts Amps usee. usee. 1200 1200 1200 1200 1200 1200 1200 1200 200 300 300 300 400 400 400 600 1500 2100 Fuji Electric
Original

BI400N

Abstract: THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES â'¢ 200 - 600 Amp Device Type . V e to ': lc Pc Cont. P tr IG B T Volte Amps W atts 200 1200 1500 1200 300 2100 300 :2100y. 1200 1200 300 â'™ 2100 .[fita i-M 400 3100 w 1200 400 3100 400 3100 .,.:1200J:, 600 4100!; 1 1MBI200N-120 1MBI300N-120 1MBI300NN-120 1MBI300NP-120 1MBI400N-120 1MBI400NN-120 1MBI400NP-120 1MBI600P-120 VcE(sat) Max. Volts 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.2 Vge= 15V Switching Time (Max
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OCR Scan
BI400N 2MBI50N-120 2MBI75N-120 2MBI100N-120 2MB100NB-120 2MBI100NC-120 2MBI150N-120
Abstract: No. 25 ^ Il TM^II -t 1MBI300NP-120 SdlIGBT^V^â'""Nv'J-Tj 1MBI300NINI-120 - sax-f y ^ V 9WNv 'J - XJ 1200V/300A/1fflffl â WS : Features + High Speed Switching Voltage Drive Low Inductance , additional cooling fin with thermal compound. 1MBI300NP-120/1MBI300NN-120 â ^ItttiH : Characteristics I , ) Reverse biased.safe operating area 1MBI300NP-120/1MBI300NN-120 001 0.1 /\-;i/XiffiPw CS] Transient , = 25°C) Capacitance vs. Collector-Emitter voltage : Outline Drawings 1mbi300np-120 2-M4 1 -
OCR Scan
7MBI40N-120 7MBI50N-120 7MBR10NF120 7M6R15NF120 7MBR25NF120

M2530

Abstract: MBI300NN-120 1MBI300NN120 Transistors Independent IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)2.0k Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.16 I(CES) Min. (A) @V(CES) (V) (Test Condition) I(GES) Max. (A) @V(GES) (V) (Test Condition) V(CE)sat Max. (V)3.3 @I(C) (A) (Test Condition)300 @V(GE) (Test Condition)15 V(GE)th Max. (V) @I(C) (A) (Test Condition) @V(CE) (V
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OCR Scan
MBI300NN-120 M2530 P1201M P120 354 1mb1300 S125-C 1MBI300NP-120/1MBI300NN-120 J94/J94
Abstract: 1MBI300N-120 1200V / 300A 1 in one-package Features · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo , mounting on the additional cooling fin with thermal compound 1MBI300N-120 Characteristics , Collector current : Ic [A] 10 0 200 400 Collector current : Ic [A] 600 1MBI300N-120 IGBT Module , Collector-Emitter voltage : VCE [V] 1200 Gate-Emitter voltage : VGE [V] 1MBI300N-120 IGBT Module American Microsemiconductor
Original
Abstract: Discontinued IGBT Modules IGBT Modules, N series Discontinued Basic Type Number 1MBI150NH-060 1MBI150NK-060 1MBI200N-120 1MBI200NH-060 1MBI200NK-060 1MBI300N-120 1MBI300NN-120 1MBI300NP-120 1MBI400N-120 1MBI400NN-120 1MBI400NP-120 1MBI600NN-060 1MBI600NP-060 2MBI100N-060 2MBI100N-120 2MBI100NB-120 2MBI100NC-120 2MBI150N-060 2MBI150N-120 2MBI150NB-120 2MBI150NC-060 2MBI150NC-120 2MBI200N-060 2MBI200N-120 2MBI200NB-120 2MBI300N-060 2MBI300N-120 2MBI300NB-060 2MBI400N-060 2MBI50N-060 Fuji Electric
Original

2MBI75N-060

Abstract: 1MBI400N-120 1MBI300NP120 Transistors Independent IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)2.0k Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.16 I(CES) Min. (A) @V(CES) (V) (Test Condition) I(GES) Max. (A) @V(GES) (V) (Test Condition) V(CE)sat Max. (V)3.3 @I(C) (A) (Test Condition)300 @V(GE) (Test Condition)15 V(GE)th Max. (V) @I(C) (A) (Test Condition) @V(CE) (V
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Original
2MBI600NT-060 2MBI75N-060 7MBI75N-060 2mbi 7mbi40n 2MBI150NC120 7MBI100N-060
Abstract: 1MBI300N-120 1MBI300NP-120 1MBI300NN-120 1MBI400N-120 1MBI400NP-120 1MBI400NN-120 20 VCES VGES American Microsemiconductor
Original

P607

Abstract: 1MBI150NK-060 2MBI200PB-140 2MBI200NB-120 2MBI200NB-120-01 2MBI300S-120 2MBI300N-120 300 1MBI300N-120 300 1MBI300NP-120 1MBI300NN-120 2MBI300P-140 2MBI300N-120-01 1MBI300S-120 1MBI400N-120 400 1MBI400NP-120 1MBI400NN-120
Fuji Electric
Original
2MBI50P-140 2MBI75P-140 2MBI100PC-140 2MBI150PC-140 1MBI600PX-120 1MBI600PX-140 P607 6MBI20GS-060 m235 m236 1mbi200 6MBI10GS-060

7MBR30SA060-50

Abstract: 1200V 1MBI300NP-120 1MBI300NN-120 IGBT Module 1200V / 300A 1 in one-package Features · High , : Ic [A] 600 1MBI300NP-120 / 1MBI300NN-120 IGBT Module Dynamic input characteristics , ] Switching time : ton, tr, toff, tf [n sec.] 1000 IGBT Module 1MBI300NP-120 / 1MBI300NN-120 , defined mounting on the additional cooling fin with thermal compound IGBT Module 1MBI300NP-120 / 1MBI300NN-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj
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Original
6MBI15GS-060 7MBR30SA060 6MBI50S-060 2MBI200TA-060 2MBI300TA-060 2MBI300N-060-04 7MBR30SA060-50 1200V 7mbr35sa 2mbi200n 7MBR20SC060 7MBR30SC060 7MBR50SC060

1MBI300NN-120

Abstract: 1MBI300NP-120 600V max 200A max 1MBI300N-120 1200V/300A 1 in one-package 4 1200V max 300A max M127 1MBI300NN-120 1200V/300A 1 in one-package 4 1200V max 300A max M129 1MBI300NP-120 1200V/300A 1 in , 1MBI300NP-120 1MBI300NN-120 IGBT Module 1200V / 300A 1 in one-package Features · High speed switching , compound IGBT Module 1MBI300NP-120 / 1MBI300NN-120 Capacitance vs. Collector-Emitter voltage Tj
Fuji Electric
Original
IGBT DRIVE 600V 300A

igbt 1200v 600a

Abstract: IGBT DRIVE 600V 300A 1MBI300N-120 IGBT Module 1200V / 300A 1 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC , compound IGBT Module 1MBI300N-120 Characteristics (Representative) Collector current vs , Module 1MBI300N-120 Dynamic input characteristics Switching time vs. RG Vcc=600V, Ic=300A, VGE , , tr, toff, tf [n sec.] 1000 IGBT Module 1MBI300N-120 Capacitance vs. Collector-Emitter
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Original
igbt 1200v 600a 600V150A M127 600V 200A TR

IGBT DRIVE 600V 300A

Abstract: 1MBI300NP-120 1MBI300NN-120 IGBT Module 1200V / 300A 1 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for , with thermal compound IGBT Module 1MBI300NP-120 / 1MBI300NN-120 Characteristics (Representative , 1MBI300NP-120 / 1MBI300NN-120 IGBT Module Dynamic input characteristics Switching time vs. RG Vcc , ] Switching time : ton, tr, toff, tf [n sec.] 1000 IGBT Module 1MBI300NP-120 / 1MBI300NN-120
Fuji Electric
Original

IGBT DRIVE 600V 300A

Abstract: â  1.5 0 50 400 0.08 0.22 3.0 0.35 NI127 1MBI300N-120 1200 300 2100 3.3 300 1.2 1.5 0 50 600 0.06 0.16 30 0.35 M127 1MBI300NN-120 1200 300 2100 3.3 300 1.2 1.5 050 600 0.06 0.16 3.0 0.35 M129 1MBI300NP-120 1200 300 2100 3.3 300 1.2 1.5 0.50 600 0.06 0.16 30 0.35 M128 1MBI400N-120 1200 400 3100 3.3 400
Fuji Electric
Original

7MB150N-120

Abstract: 7MB140N-120 0.35 0.35 0.35 0.35 1200 VOLT, N SERIES SINGLE MODULES Device type V olts 1MBI200N-120 1MBI300N-120 1MBI300NP-120 1MBI300NN-120 1MBI400N-120 1MBI400NP-120 1MBI400NN-120 1200 1200 1200 1200 1200 1200 1200 V ces lc
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OCR Scan
7MBR15NF120 7MB150N-120 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt 150 VOLT 12 AMP diode
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