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Abstract: Insulated-Gate Bipolar Transistors GSI510 GSI510,1GT5E10CS File Number 2326 Current Sensing IGTâ„¢ Transistors Insulated Gate Bipolar Transistors 10 A, 500 V rosioni = 0.27 fl Features: â-  Low Vceismi - 2.5 V typ. @10A u Ultra-fast turn-on - 100 ns typical m Polysilicon MOS gate - voltage controlled turn on/oft m High current handling -10 A @ 100° C case a Current sensing pilot TERMINAL DIAGRAM s ek 92GS-44006R1 92GS-44006R1 The GSI510 GSI510 and/or IGT5E10CS IGT5E10CS Series IGT" Transistor (Insulated Gate Bipolar Transistor) is a ... OCR Scan
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IGT5E10CS GSI510 Bipolar Transistors transistor C 639 W 1GT5E10CS 92GS-44006R1 GSI510 abstract
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