1DI300A-120 E82988 - Datasheet Archive

 

FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline Drawings [mm] Features High Voltagee Including Free Wheeling

 

1DI300A-120 1DI300A-120 (300A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline Drawings [mm] Features High Voltagee Including Free Wheeling Diode Excellent Safe Operating Area ASO Insulated Type Applications High Power Switching AC AC Motor Controls DC DC Motor Controls DC Uninterruptible Power Supply CASE UL : Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item DC 1ms DC DC 1ms one Transistor two Transistor AC.1min Di : Equivalent Circuit Schematic d e nu i t con s Unit V V V V A A A A A W W °C °C g V Nm Nm Nm ct. u rod p Note: *1:Recommendable Value; 2.5to3.0Nm[25to30kgfcm](M5) *2:Recommendable Value; 3.5to4.0Nm[35to40kgfcm](M6) 1.3to1.6Nm[13to16kgfcm](M4) Electrical characteristics (Tc =25°C unless otherwise specified) Item Symbol Rating VCBO 1200 VCEO 1200 VCEO(SUS) VEBO 10 IC 300 ICP 600 -I C 300 IB 16 IBP 32 PC 2000 PC Tj +150 Tstg -40 to +125 m 560 Viso 2500 Mounting *1 3.5 Terminal *2 4.5 Terminal *2 1.7 M105 E82988 E82988(M) Symbol VCBO VCEO VCEO(SUS) VCEX(SUS) VEBO ICBO IEBO -V CE hFE VCE(Sat) VBE(Sat) ton tstg tf t rr Test Conditions ICBO = 2mA ICEO = 2mA IC=300A, -IB=24A IEB = 400mA VCB = 1200V VEB = 10V -Ic=300A IC = 300A, VCE = 5V IC = 300A, IB = 8.0A Min. Typ. Max. Units 2.0 400 2.0 V V V V V mA mA V 2.5 3.5 3.0 15.0 3.0 0.6 V V µs µs µs µs Max. Units 1200 1200 1200 10 70 IC = 300A, Pw=500µs IB1 = +8.0A IB2 = -24.0A -IC=300A, VBE=-6V, -di/dt=300A/µs : Thermal characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Transistor Diode With Thermal Compound Min. Typ. 0.062 0.16 0.03 °C/W °C/W °C/W 1 1DI300A-120 1DI300A-120 (300A) FUJI POWER TRANSISTOR MODULE : Characteristics Di d e nu i t con s ct. u rod p 2 1DI300A-120 1DI300A-120 (300A) FUJI POWER TRANSISTOR MODULE Di d e nu i t con s ct. u rod p 3