NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PPC PRODUCTS CORP bOE T> bûSbni QGGGTSB 2bl «PPC 1C5615 1C5615 1C5619 1C5619 1C5617 1C5621 1C5621 1 Amp Fast Recovery Rectifier Chip 1200-600 Volts T-OV05 T-OV05 CHIP TYPE: RH FEATURES • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50 , with Thermal Silicon Dioxide TYPE Vr BVr @ 50/¿a if(surge) 1C5615 1C5615 200V 220V 25A 1C5617 400V 440V 25A , 250ma 1C5615 1C5615, 1C5617 Trr - - 150 ns 1C5619 1C5619 250 1C5621 1C5621 300 4 PPC PRODUCTS CORPORATION I ... | OCR Scan |
1 pages, |
PPC PRODUCTS CORP 1C5621 1C5619 1C5617 1C5615 T-OV05 1C5615 abstract |
| Abstract: PRODUCTS CORP 1C5615 1C5615 1C5619 1C5619 1C5617 1C5621 1C5621 bOE t> m basbni oqoocì53 2bi «ppc 1 Amp Fast Recovery Rectifier Chip / 200-600 Volts ovos CHIP TYPE: RH FEATURES • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000 Ä , Thermal Silicon Dioxide TYPE Vr BVr @ 50/xa if(surge) 1C5615 1C5615 200V 220V 25A 1C5617 400V 440V 25A 1C5619 1C5619 , 250ma 1C5615 1C5615, 1C5617 Trr - - 150 ns 1C5619 1C5619 250 1C5621 1C5621 300 PPC PRODUCTS CORPORATION I 7516 ... | OCR Scan |
1 pages, |
1C5621 1C5619 1C5617 1C5615 1C5615 abstract |
| Abstract: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5617 CONFIGURATION:(100-500ns) METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE TJ -55 to +175 °C REVERSE RECOVERY TIME trr 150 nS MAX. FORWARD VOLTAGE DROP VF 1.600 @3.0 A V MECHANICAL DIMENSIONS: In Inches / mm *This drawing is for reference ... | Original |
2 pages, |
1C5617 1C5617 abstract |
| Abstract: 1C5617 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 928, REV. A FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) Condition @ 55°C Max. 400 1.0 Units V A TJ Tstg - 40 -55 to +175 -55 to +175 mil °C °C Symbol VF1 Condition @ 3.0A, Pulse, TJ = 25 °C Duty cycle 2%, pulse width 300us ... | Original |
2 pages, |
1C5617 1C5617 abstract |
| Abstract: c6090 1C5415 1C5415 1C5416 1C5416 1C5417 1C5417 1C5418 1C5418 1C5419 1C5419 1C5420 1C5420 1C5615 1C5615 1C5617 1C5619 1C5619 1C5621 1C5621 (1) Metal System A , 1C5617 Fast Recovery 1C4467 1C4467 Zener 1C4969 1C4969 Zener 1C5618 1C5618 General Purpose 1C4468 1C4468 ... | Original |
18 pages, |
1C6105A 1c5804 1C5711 1C4471 1c4148 1C6282A 1C6284 SD085UF300X40 SD215UF600X75 MURC120 TOP 242 PN 1C6642 1C4004 1C6157 murc260 datasheet abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |