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1B2 zener diode

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Abstract: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A ADE-208-118A(Z) Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 5.2V through 38V of zener , Series Type No. DO-35 DO-35 Outline = C 3 = 1 17 1B.2 K 2 ody color is orange ' \ X B ... OCR Scan
datasheet

5 pages,
42.21 Kb

ADE-208-118A TEXT
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Abstract: On-chip zener diode of 60il0V between collector and base . Uniformity in collector to base breakdown , *: On-chip zener diode (60- 1OV) Electrical Characteristics at Ta=25°C Collector Cutoff Current *CB0 Emitter , Vbs » -5V Ic*250 Ißl*"250 1b2-M Unit (resistance: 0, capacitance: F ) hFE - IC Cob - VcB ... OCR Scan
datasheet

3 pages,
84.32 Kb

1B2 zener diode 2SC3785 2298B TEXT
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Abstract: Units m fi ttc Rth(j-c) Transistor 0.09 °C/W m fi ta Rth(j-c) Diode 0.30 °C/W m fi fct Rth(j-c) Zener Diode 1.25 °C/W m fi Rth(c-f) With Thermal Compound 0.02 °C/W 1 DI3OOMP-O5O(300A , Wheeling Diode 160 0.5 m °-3 & a hih(j-c) 0. 1 (r/w) 0.05 MO 120 100 BO 60 40 20 0.03 10 m 1 s it 0.5 Riwj-c) o, 3 Ct/w) f.O 2. 0 3.0 0. 1 10 US m Œ Vf [V] Forward Voltage of Zener Diode , Thermal Resistance (Diode) 10' 10 m t [sec) ¡Amfmmvx Kmtt Transient Thermal Resistance (Zener Diode ... OCR Scan
datasheet

4 pages,
200.98 Kb

T930 T810 T151 M114 diode zener 600v 1a 1B2 zener diode B68 zener diode DI300MP-050 TEXT
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Abstract: RthCj—c) Diode 0.30 °c/w , & m üt Rth(j-c) Zener Diode 1.25 °C/W m : m . t/t Rth(c-f) With , ] Forward Voltage of Zener Diode 1DI300MP-12O 1DI300MP-12O(300A) io M t (sec) Transient Thermal Resistance , ] t (msec) Transient Thermal Resistance (Zener Diode) B-344 B-344 ~.cr>D ? o/ili - ? Ì2' , \ \ 1 I \ \ -E 25 A t I 1B2 ... OCR Scan
datasheet

5 pages,
167.71 Kb

1b2 zener B342 1DI300MP-120 diode ft 344 M117 B343 B-343 1B2 zener diode B341 B344 25t125 TRANSISTOR BO 344 b342 transistor TEXT
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Abstract: €¢ On-chip zener diode of 60 ± 10V between collector and base. • Uniformity in collector to base voltage , zener diode (60±10V) Electrical Characteristics atTa = 25°C min typ max unit Collector Cutoff , j^fc UU-w—I ir iRL 20 20V lOOfj -5V IÇ»2S0 1B1c"250 1B2"'a Unit(Resistance : Cl ... OCR Scan
datasheet

3 pages,
80.87 Kb

2SC4671 1b2 zener 1B2 zener diode TEXT
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Abstract: Temperature Tstg * : On-chip zener diode (60 + 10V) ÌK50 *50 6 1.2 2.5 1 150 55 to +150 unit V V V A A W °c , drivers, printer hammer drivers, relay drivers). Features • Darlington connection. ■ On-chip zener diode of 60± 10V between collector and base. • Uniformity in collector to base voltage. • High DC , ps Fall Time tf 0.4 ps Switching Time Test Circuit PW=50jjs dc £17» 1b2 ibi—lb2-2ma n ibî*rb ... OCR Scan
datasheet

3 pages,
76.1 Kb

-250IB2 2SC4491 1B2 zener diode TEXT
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Abstract: 2SD2127 2SD2127 SWITCHING APPLICATIONS. LAMP, SOLENOID DRIVE APPLICATIONS. . Low Collector Saturation Voltage = V CE(sat)=0-3V(Max.) (IC=1A) SILICON NPN EPITAXIAL TY P E INDUSTRIAL APPLICATIONS Unit in mm 10Í0.3 ¿3.2 ±0.2 2.7 ±0.2 . High DC Current Gain : hpj;" 500-1500 (Ic=0.5A) . Zener Diode Included Between Collector and Base. 075±0.15 2.54±0.25 2.54±0.25 MAXIMUM RATINGS (Ta , = " 1B2 " 10mA DUTY CYCLE £ 1% © - 1.6 - i ls Fall Time tf - 0.4 - ... OCR Scan
datasheet

4 pages,
106.39 Kb

1b2 zener 2SD2127 TEXT
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Abstract: 2SD1976 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature · Built-in High voltage zener diode (300 V) · High Speed switching Outline T O -2 2 0 A B , voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power , saturation voltage Emitter to collector diode forward voltage Turn on time Storage time Fall time Symbol , = 40 mA lF = 6 A lc = 4 A, V cc = 20 V I B1 = 1B2 = 4 0 m A ^ B E (s a t) - - V ece ... OCR Scan
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5 pages,
99.96 Kb

2SD1976 TEXT
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Abstract: DC Current Gain : hpE=2000(Min.) @Vq ; =2V, Ic = 1A . Zener Diode Included Between Collector and , =0.5A VCB=10V, Ie = 0, f=lMHz input ibi mA V V V KHz pF 0 - 20/ j s 1B2\ Switching Time ... OCR Scan
datasheet

4 pages,
144.27 Kb

mp4002 MP4002 TEXT
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Abstract: DATA SHEET NEC _y r SILICON TRANSISTOR 2SD1702 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1702 2SD1702 is NPN silicon e pita xial darlin g to n tran sistor designed fo r pulse m o to r, p rin te r driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in m illim eters · · · High DC C u rrent gain. Zener Diode between C o lle ctor and Base fo r Absorbing , e * 2.0 V . ¡c = » 0.8 A IC - 0.5 A *B1 = ~'1B2 = ^-0 m A V CC = 40 V , r l * 80 12 l C - 0 .5 A ... OCR Scan
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3 pages,
99.95 Kb

TEXT
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Archived Files

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/download/44732869-596959ZC/30910.zip ()
NXP 23/10/2012 372.47 Kb ZIP 30910.zip
SHAFT LINES HAS DETERMINE IMPORTANT CUTTING UPON MOTORS DIODE INSUFFICIENT RUNS NUMBER DOES SCALED CONVERT SAMPLE TUBES HARMONICS ZENER APPLICATIONS TURNING ISSUE SIMPLE ESPECIALLY USE ACHIEVING TIME MOTOR DEMANDS HAS DETERMINE CUTTING RESISTIVE FEATURES COMMAND INTEGRATE SIDE SYSTEM DIODE ROUTING RUNS HIGHER ADDITIONAL BASE NUMBERS ALTHOUGH DUE EQUIVALENT JIM FREE EVIDENCE DISTRIBUTED ZENER TURNING FEW EXPRESSES GENERATING 2ND SYSTEM DIODE NUMBER SPURIOUS DOES SCALED ABNORMAL PHASE FREQUENCY CORRECT
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb
No abstract text available
/download/60837585-238067ZC/database.zip ()
Intel 17/06/1998 150.77 Kb ZIP database.zip
No abstract text available
/download/46754646-383008ZC/eb285.zip ()
Metcomp 12/09/1997 6878.78 Kb ZIP eb285.zip