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Part : V1B2ZYVB-XZLXX-1-XZR1 Supplier : Carling Technologies Manufacturer : Avnet Stock : - Best Price : $8.1195 Price Each : $14.4947
Part : 1621B2ZZGR Supplier : Texas Instruments Manufacturer : Rochester Electronics Stock : 9,000 Best Price : - Price Each : -
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1B2 zener diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A(Z) Rev 1 Features â'¢ Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. â'¢ Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. â'¢ Wide spectrum from 5.2V through 38V of zener , Series Type No. DO-35 Outline = C 3 = 1 17 1B.2 K 2 ody color is orange ' \ X B -
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diode HZ27L-3 hz11l HZ16L HZ15L HZ12L HZ18L HZ20L HZ22L
Abstract: On-chip zener diode of 60il0V between collector and base . Uniformity in collector to base breakdown , *: On-chip zener diode (60- 1OV) Electrical Characteristics at Ta=25°C Collector Cutoff Current *CB0 Emitter , Vbs » -5V Ic*250 Ißl*"250 1b2-M Unit (resistance: 0, capacitance: F ) hFE - IC Cob - VcB -
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2SC3785 2298B
Abstract: Units m fi ttc Rth(j-c) Transistor 0.09 °C/W m fi ta Rth(j-c) Diode 0.30 °C/W m fi fct Rth(j-c) Zener Diode 1.25 °C/W m fi Rth(c-f) With Thermal Compound 0.02 °C/W 1 DI3OOMP-O5O(300A , Wheeling Diode 160 0.5 m °-3 & a hih(j-c) 0. 1 (r/w) 0.05 MO 120 100 BO 60 40 20 0.03 10 m 1 s it 0.5 Riwj-c) o, 3 Ct/w) f.O 2. 0 3.0 0. 1 10 US m Å' Vf [V] Forward Voltage of Zener Diode , Thermal Resistance (Diode) 10' 10 m t [sec) ¡Amfmmvx Kmtt Transient Thermal Resistance (Zener Diode -
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B68 zener diode diode zener 600v 1a M114 T151 T810 T930 DI300MP-050 E82988
Abstract: RthCjâ'"c) Diode 0.30 °c/w , & m üt Rth(j-c) Zener Diode 1.25 °C/W m : m . t/t Rth(c-f) With , ] Forward Voltage of Zener Diode 1DI300MP-12O(300A) io M t (sec) Transient Thermal Resistance , ] t (msec) Transient Thermal Resistance (Zener Diode) B-344 ~.cr>D ? o/ili - ? Ì2' , \ \ 1 I \ \ -E 25 A t I 1B2 -
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1DI300MP-120 b342 transistor TRANSISTOR BO 344 25t125 B344 B341 B-343 VCBO-1200V
Abstract: '¢ On-chip zener diode of 60 ± 10V between collector and base. â'¢ Uniformity in collector to base voltage , zener diode (60±10V) Electrical Characteristics atTa = 25°C min typ max unit Collector Cutoff , j^fc UU-wâ'"I ir iRL 20 20V lOOfj -5V IÇ»2S0 1B1c"250 1B2"'a Unit(Resistance : Cl -
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2SC4671 1b2 zener
Abstract: Temperature Tstg * : On-chip zener diode (60 + 10V) ÌK50 *50 6 1.2 2.5 1 150 55 to +150 unit V V V A A W °c , drivers, printer hammer drivers, relay drivers). Features â'¢ Darlington connection. â  On-chip zener diode of 60± 10V between collector and base. â'¢ Uniformity in collector to base voltage. â'¢ High DC , ps Fall Time tf 0.4 ps Switching Time Test Circuit PW=50jjs dc £17» 1b2 ibiâ'"lb2-2ma n ibî*rb -
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2SC4491 RBE-00
Abstract: 2SD2127 SWITCHING APPLICATIONS. LAMP, SOLENOID DRIVE APPLICATIONS. . Low Collector Saturation Voltage = V CE(sat)=0-3V(Max.) (IC=1A) SILICON NPN EPITAXIAL TY P E INDUSTRIAL APPLICATIONS Unit in mm 10Í0.3 ¿3.2 ±0.2 2.7 ±0.2 . High DC Current Gain : hpj;" 500-1500 (Ic=0.5A) . Zener Diode Included Between Collector and Base. 075±0.15 2.54±0.25 2.54±0.25 MAXIMUM RATINGS (Ta , = " 1B2 " 10mA DUTY CYCLE £ 1% © - 1.6 - i ls Fall Time tf - 0.4 - -
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A1066
Abstract: 2SD1976 Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Feature · Built-in High voltage zener diode (300 V) · High Speed switching Outline T O -2 2 0 A B , voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power , saturation voltage Emitter to collector diode forward voltage Turn on time Storage time Fall time Symbol , = 40 mA lF = 6 A lc = 4 A, V cc = 20 V I B1 = 1B2 = 4 0 m A ^ B E (s a t) - - V ece -
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D-85622
Abstract: DC Current Gain : hpE=2000(Min.) @Vq ; =2V, Ic = 1A . Zener Diode Included Between Collector and , =0.5A VCB=10V, Ie = 0, f=lMHz input ibi mA V V V KHz pF 0 - 20/ j s 1B2\ Switching Time -
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mp4002 MP4002 MP40Q2
Abstract: DATA SHEET NEC _y r SILICON TRANSISTOR 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1702 is NPN silicon e pita xial darlin g to n tran sistor designed fo r pulse m o to r, p rin te r driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in m illim eters · · · High DC C u rrent gain. Zener Diode between C o lle ctor and Base fo r Absorbing , e * 2.0 V . ¡c = » 0.8 A IC - 0.5 A *B1 = ~'1B2 = ^-0 m A V CC = 40 V , r l * 80 12 l C - 0 .5 A -
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Abstract: . Zener Diode between Collector and Base fo r Absorbing Surge Voltage is built-in. 1.5 + 0.1 · Reverse Diode between Collector and Em itter is built-in. ABSOLUTE MAXIMUM RATINGS Maxim um Voltages , I q = 0.5 A IB 1 = ~ 1B2 = 1 0 mA V c c = 40 V , R L - 80 Î Î lc = 0.5 A, I b = 1-0 mA lc = 0.5 A, l -
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PT 6062A EL1202 1702 NPN transistor IEI-1213 MEI-1202 MF-1134
Abstract: Amplifiers Digital Nulling Technique The digital nulling technique involves the zener diode nulling network of Figure 1. The zener diodes have relatively high breakdown voltages and never operate in the zener mode. The pur pose of the zeners is to short out resistors Rl, 2R1, 4R1, or 8R1 by forcing a high reverse cur rent through the diode to metalize the junction. The input offset voltage can be adjusted by , state of zener diodes Z1, Z2 and Z3 as per Figure 1 . for ARq/R c ^ 1-0 ln(1+ARc/Rc) ~ -ARc/Rci thus -
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0P07D 0po7c chip 07ad OP07DN raytheon OP07 OP-07 AD510 6S02657A
Abstract: Zener Diodes RD4.7JSRD39JS 400 mW DHD RD4.7JSRD39JS400 mWDHD mm Double Heatsink Diode 0.4 10 4.7 V39 V 2.4 MAX. 25 MIN. 1/31/ mm 2.0 MAX. 25 MIN. RD4.7JSRD39JSABAB1AB3 DO-34JEDEC TA = 25 P 400 mW Tj 175 Tstg -65175 IF 150 mA PRSM 2.4t = 10s W , 0.5 0.1 30 36 5 VZ40 ms IZ ABAB1, 1B2, AB3ABAB1, AB2, AB3 D13937JJ5V0DS00 3 -
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RD16JS RD5.1J RD39JS RD18JS RD15JS RD13JS SC-5023C
Abstract: Zener Diodes RD4.7JSRD39JS 400 mW DHD RD4.7JSRD39JS400 mWDHD mm Double Heatsink Diode 0.4 , 0.5 0.1 30 36 5 VZ40 ms IZ ABAB1, 1B2, AB3ABAB1, AB2, AB3 D13937JJ5V0DS00 3 NEC
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864A-B RD10JS RD11JS RD12JS
Abstract: 0.1uF VCCAP C64 0.1uF D6 C69 0.1uF DIODE ZENER ROHM RSZ5234B NOTE: VSSCP and VSSAP , 22 C51 0.1uF D3 C60 0.1uF DIODE ZENER ROHM RSZ5234B NOTE: VSSCP and VSSAP 50 mil , 2A5 2A6 2A7 2A8 1B1 1B2 1B3 1B4 1B5 1B6 1B7 1B8 2B1 2B2 2B3 2B4 2B5 2B6 2B7 2B8 , 1A4 1A5 1A6 1A7 1A8 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8 1B1 1B2 1B3 1B4 1B5 1B6 1B7 , TXDA TXDD CLKA FSCA TSCD# Rev 2.0: Added HDLC D. M5V + + Rev 2.0: Added R86 1B1 1B2 Advanced Micro Devices
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1B5 zener diode 2b8 zener diode Zener Diode BA11 Zener Diode BA13 2A3 zener diode 1B6 zener diode 186CC/CH/CU SPARE14 PIO18 PIO39 PIO32 PIO17
Abstract: A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , through the SCR will increase. If the current increases sufficiently to cause the B 1B2 product to , Structures A-38 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel Mitel Semiconductor
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digital triggering scr zener diode A36 TO 48 SCR FAST SWITCHING power supply 12v, 7v, 5v power supply 12v datasheet mosfet power supply
Abstract: 0603 * 4 5% ZENER-BASE CR1 1 MOTOROLA 1N4678 DO35 DIODE ZENER 500 Milliwatts , 2 OF 1 CPU CARD 11 1 U8 VREF OE1 OE2 VCC 1A1 1B1 1A2 1B2 , 1B1 1A2 1B2 1A3 1B3 FST16211 C 1A4 1A5 1A6 1A7 1A8 1A9 1B4 1B5 1B6 1B7 , VREF OE1 OE2 VCC 1A1 1B1 1A2 1B2 1A3 1B3 FST16211 56 55 1A4 1A5 , 41 40 D 3 2 1 U2 VREF OE1 OE2 VCC 1A1 1B1 1A2 1B2 1A3 1B3 IBM
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5a2 zener diode ZENER 1B9 zener DIODE 5c2 zener 5c2 4c2 zener diode Zener Diode 1B9 750CX 750CX/CX 750L- PPC750
Abstract: DO35 DIODE ZENER 500 Milliwatts Total 22 Application Note PowerPC Embedded Processors , 1B2 1A3 1B3 1A4 1A5 1A6 1A7 1A8 1A9 1B4 1B5 1B6 1B7 1B8 1B9 1A10 1B10 , VCC 1A1 1B1 1A2 1B2 1A3 1B3 FST16211 56 55 1A4 1A5 1A6 1A7 1A8 1A9 , 12 13 14 15 16 18 20 21 22 23 24 25 26 27 28 VCC 1A1 1B1 1A2 1B2 1A3 , 41 40 D 3 2 1 U2 VREF OE1 OE2 VCC 1A1 1B1 1A2 1B2 1A3 1B3 IBM
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5c2 zener diode zener 11B2 6c3 zener diode zener 2B6 ZENER A24 zener 2B1 300MH 550MH
Abstract: Si2400URT-EVB has an onboard diode bridge, filter capacitor, and voltage regulator. Power can be supplied from , includes a diode bridge (D1­D4) to guard against a polarity reversal of the dc voltage or to rectify an , , ±10% 33 pF, 16 V, NPO, ±5% 47 pF, 16 V, X7R, ±10% Dual Diode, 225 mA, 300 V BAV99, 300 mA, 100 V , , 20 pF load, 150 ESR, 50 ppm Zener, 43 V, 300 mW Zener, 5.6 V, 500 mW Supplier* Novacap Venkel , 1B2 2B2 3B2 4B2 OE S 15 1 TP15 "CTS_T" TP14 "RXD_T" TXD_M RXD_M RTS_M CTS_M Silicon Laboratories
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PC MOTHERBOARD CIRCUIT diagram free 2 pin 2.5 3.5 ptt motorola jack diagram pc motherboard reset circuit 4b2 zener diode dtru 1800 Schematic Diagram Audio DB9 To 8 RCA 2400URT-EVB RS-232 2400URTEVB RJ-11
Abstract: A) SERIES PROTECTION RESISTOR B) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage , immunity, then the alternative is to connect a zener diode between VDD and VSS to prevent over-voltages , very small, limited only by the power handling capacity of the zener diode. There is one last , -38 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel transistor (Fig. 7) or when the VSS referenced diode is located close to a P-channel device. (Fig. 8). VDD Mitel Semiconductor
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A43 ZENER DIODE MD74SC540AC
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