NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C * : On-chip zener diode (60±10V , , printer hammer drivers, relay drivers). Features • High DC current gain • Wide ASO • On-chip zener diode of 60 ± 10V between collector and base. • Uniformity in collector to base voltage. • Large , iRL 20 20V lOOfj -5V IÇ»2S0 1B1c"250 1B2"'a Unit(Resistance : Cl, Capacitance : F) 0 \I 1 ... | OCR Scan |
3 pages, |
2SC4671 1b2 zener 1B2 zener diode 2SC4671 abstract |
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| Abstract: Ordering number: EN 3036 i j SANYO No.3036 _2SC4491 2SC4491 NPN Epitaxial Planar Silicon Transistor L Load (Various Drivers) Switching Applications Applications . Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Features • Darlington connection. â- On-chip zener diode , Temperature Tstg * : On-chip zener diode (60 + 10V) ÃŒK50 *50 6 1.2 2.5 1 150 55 to +150 unit V V V A A W °c °c , Fall Time tf 0.4 ps Switching Time Test Circuit PW=50jjs dc £17» 1b2 ibi-lb2-2ma n ibî*rb INPUT tut ... | OCR Scan |
3 pages, |
2SC4491 1B2 zener diode 2SC4491 abstract |
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| Abstract: Conditions Min Typ Max Units m m Rth(j-c) Transistor 0.063 °C/W m s ta RthCj-c) Diode 0.30 °c/w , & m üt Rth(j-c) Zener Diode 1.25 °C/W m : m . t/t Rth(c-f) With Thermal Compound 0.0125 °C/W , of Zener Diode 1DI300MP-12O 1DI300MP-12O(300A) io M t (sec) Transient Thermal Resistance (Transistor) 0.5 , ) Transient Thermal Resistance (Zener Diode) B-344 B-344 ~.cr>D ? o/ili - ? Ì2' , \ \ 1 I \ \ -E 25 A t I 1B2 ... | OCR Scan |
5 pages, |
M117 1DI300MP-120 B-343 B344 25t125 TRANSISTOR BO 344 1DI300MP-120 abstract |
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| Abstract: ) f.O 2. 0 3.0 0. 1 10 US m Å' Vf [V] Forward Voltage of Zener Diode 1 3 5 10 30 50 100 -1B2 CA , Conditions Min Typ Max Units m fi ttc Rth(j-c) Transistor 0.09 °C/W m fi ta Rth(j-c) Diode 0.30 °C/W m fi fct Rth(j-c) Zener Diode 1.25 °C/W m fi Rth(c-f) With Thermal Compound 0.02 °C/W 1 , t [sec) ¡Amfmmvx Kmtt Transient Thermal Resistance (Zener Diode) i o I0J B-68 - >ÃŒ l. z , 10 1.0 2.0 S «y ? â- =1 Veco (V) g K. Forward Voltage of Free Wheeling Diode 160 0.5 m °-3 & ... | OCR Scan |
4 pages, |
T930 T810 T151 M114 diode zener 600v 1a 1B2 zener diode B68 zener diode DI300MP-050 DI300MP-050 abstract |
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| Abstract: Ordering number:EN 2298B 2298B No.2298 i _2 S C 5 7 8 5 NPN Epitaxial Planar Type Silicon Transistor Driver Applications Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers) Features . High DC current gain . Vide ASO . On-chip zener diode of 60±10V , Temperature Storage Temperature *: On-chip zener diode (60±10V) Electrical Characteristics at Ta=25°C cbo , IC*250 Ißl»"250 1B2"M Unit (resistance: n, capacitance: F ) IC - VCE 1.0 4J '-6 fl o fc. h u u ... | OCR Scan |
3 pages, |
2SC3785 2298B 2298B abstract |
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| Abstract: ) ZENER DIODE RESISTOR Figure 12 - Power Supply Over-Voltage Protection If a current-limiting resistor , connect a zener diode between VDD and VSS to prevent over-voltages across the device (Fig. 12b). A , handling capacity of the zener diode. There is one last potential hazard that can develop due to "live" , the B 1B2 product to approach unity, then the SCR will latch on. The effects of temperature must , Structures A-38 MSAN-107 MSAN-107 Application Note diode is fabricated in close proximity to an N-channel ... | Original |
14 pages, |
12v zener power supply POWER SUPPLY scr gate driver ic SCR gate Control IC scr power supplies SCR POWER SUPPLY scr 12a SCHEMATIC POWER SUPPLY WITH scr scr triggering TO 48 SCR FAST SWITCHING design of mosfet based power supply High power SCR MSAN-107 MSAN-107 abstract |
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| Abstract: VCCAP C64 0.1uF D6 C69 0.1uF DIODE ZENER ROHM RSZ5234B RSZ5234B NOTE: VSSCP and VSSAP 50 mil , 0.1uF DIODE ZENER ROHM RSZ5234B RSZ5234B NOTE: VSSCP and VSSAP 50 mil traces connected to GND plane at , 2A5 2A6 2A7 2A8 1B1 1B2 1B3 1B4 1B5 1B6 1B7 1B8 2B1 2B2 2B3 2B4 2B5 2B6 2B7 2B8 , 1A4 1A5 1A6 1A7 1A8 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8 1B1 1B2 1B3 1B4 1B5 1B6 1B7 , TXDA TXDD CLKA FSCA TSCD# Rev 2.0: Added HDLC D. M5V + + Rev 2.0: Added R86 1B1 1B2 ... | Original |
11 pages, |
T7256A fsca Zener Diode 1b8 2B2 zener diode zener 2B1 zener 2B6 ba15 diode 186cc 1A7 Zener Zener Diode BA13 RJ45A sa4 Zener diode 1B6 zener diode SOT-23 la22 datasheet abstract |
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| Abstract: 864A-B Zener Diodes RD4.7JSRD39JS 7JSRD39JS 400 mW DHD RD4.7JSRD39JS400 7JSRD39JS400 mWDHD mm Double Heatsink Diode 0.4 , 0.5 0.1 30 36 5 VZ40 ms IZ ABAB1, 1B2, AB3ABAB1, AB2, AB3 D13937JJ5V0DS00 D13937JJ5V0DS00 3 ... | Original |
10 pages, |
RD39JS RD18JS RD15JS RD13JS RD12JS RD11JS RD10JS RD16JS datasheet abstract |
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| Abstract: Zener Diodes RD4.7JSRD39JS 7JSRD39JS 400 mW DHD RD4.7JSRD39JS400 7JSRD39JS400 mWDHD mm Double Heatsink Diode 0.4 10 4.7 V39 V 2.4 MAX. 25 MIN. 1/31/ mm 2.0 MAX. 25 MIN. RD4.7JSRD39JSABAB1AB3 7JSRD39JSABAB1AB3 DO-34JEDEC DO-34JEDEC TA = 25 P 400 mW Tj 175 Tstg -65175 IF 150 mA PRSM 2.4t = 10s W , 0.5 0.1 30 36 5 VZ40 ms IZ ABAB1, 1B2, AB3ABAB1, AB2, AB3 D13937JJ5V0DS00 D13937JJ5V0DS00 3 ... | Original |
8 pages, |
RD39JS RD18JS RD15JS RD13JS RD12JS RD11JS RD10JS RD16JS 7JSRD39JS 7JSRD39JS400 7JSRD39JS abstract |
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| Abstract: 0603 * 4 5% ZENER-BASE CR1 1 Motorola 1N4678 1N4678 DO35 DIODE ZENER 500 Milliwatts , 23 24 25 26 27 28 OE2 VCC 1A1 1B1 1A2 1B2 1A3 1B3 1A4 1A5 1A6 1A7 , 21 22 23 24 25 26 27 28 U9 C VREF OE1 OE2 VCC 1A1 1B1 1A2 1B2 1A3 , 21 22 23 24 25 26 27 28 VCC 1A1 1B1 1A2 1B2 1A3 1B3 FST16211 FST16211 11C2 , OE2 VCC 1A1 1B1 1A2 1B2 1A3 1B3 FST16211 FST16211 8 1A4 1A5 1A6 1A7 1A8 1A9 ... | Original |
19 pages, |
zener 6c3 1B5 zener diode RISCwatch zener 2B8 4c2 zener diode 2A3 zener diode 4b2 zener diode fet B20 p03 256-pin BGA drawing dh06 zener 2B1 5a2 zener diode zener DIODE 5c2 750CX 750CX 750CX abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| * * * *PZU5V1B2 * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 2uA @ VR = 1,5V *IZSM = 5,5A *VZ = 5,20V @ IZ = 5mA * * * * * * *Package: SOD323F * *Package Pin 1: cathode *Package Pin 2: anode * * * * *Simulator: SPICE2 * * *# .MODEL PZU5.1B2 D + IS = 7.526E-16 526E-16 526E-16 526E-16 + N = 0.992 + BV = 5.09 + IBV = 0.005 + RS = 0.2338 + CJO = 129.04E-12 04E-12 04E-12 04E-12 + VJ = .46589 + M = .2767 .ENDS * www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (PZU5_1B2.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *PZU9V1B2L * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 500nA @ VR = 6V *IZSM = 3,5A @ tp = 100ms *VZmax = 9,23V @ IZ = 5mA * * * * * * *Package: SOD882 * *Package Pin 1: cathode *Package Pin 2: anode * * * * *Simulator: SPICE2 * * *# .MODEL PZU9.1B2L D + IS = 7.526E-16 526E-16 526E-16 526E-16 + N = 0.992 + BV = 9.04 + IBV = 0.005 + RS = 0.2338 + CJO = 81.449E-12 449E-12 449E-12 449E-12 + VJ = .78547 + M www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (PZU9_1B2L.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *PZU5V1B2L * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 2uA @ VR = 1,5V *IZSM = 5,5A @ tp = 100ms *VZmax = 5,20V @ IZ = 5mA * * * * * * *Package: SOD882 * *Package Pin 1: cathode *Package Pin 2: anode * * * * *Simulator: SPICE2 * * *# .MODEL PZU5.1B2L D + IS = 7.526E-16 526E-16 526E-16 526E-16 + N = 0.992 + BV = 5.09 + IBV = 0.005 + RS = 0.2338 + CJO = 129.04E-12 04E-12 04E-12 04E-12 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (PZU5_1B2L.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *PZU5V1B2A * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 2uA @ VR = 1,5V *IZSM = 5,5A @ tp = 100ms *VZmax = 5,20V @ IZ = 5mA * * * * * * *Package: SOD323 * *Package Pin 1: cathode *Package Pin 2: anode * * * * *Simulator: SPICE2 * * *# .MODEL PZU5.1B2A D + IS = 7.526E-16 526E-16 526E-16 526E-16 + N = 0.992 + BV = 5.09 + IBV = 0.005 + RS = 0.2338 + CJO = 129.04E-12 04E-12 04E-12 04E-12 www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (PZU5_1B2A.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *PZU9V1B2 * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 500nA @ VR = 6V *IZSM = 3,5A @ tp = 100ms *VZmax = 9,23V @ IZ = 5mA * * * * * * *Package: SOD323F * *Package Pin 1: cathode *Package Pin 2: anode * * * * *Simulator: SPICE2 * * *# .MODEL PZU9.1B2 D + IS = 7.526E-16 526E-16 526E-16 526E-16 + N = 0.992 + BV = 9.04 + IBV = 0.005 + RS = 0.2338 + CJO = 81.449E-12 449E-12 449E-12 449E-12 + VJ = .78547 + M www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (PZU9_1B2.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| * * * *PZU9V1B2A * *NXP Semiconductors * *Single Zener diode * * * * * * *IR = 500nA @ VR = 6V *IZSM = 3,5A @ tp = 100ms *VZmax = 9,23V @ IZ = 5mA * * * * * * *Package: SOD323 * *Package Pin 1: cathode *Package Pin 2: anode * * * * *Simulator: SPICE2 * * *# .MODEL PZU9.1B2A D + IS = 7.526E-16 526E-16 526E-16 526E-16 + N = 0.992 + BV = 9.04 + IBV = 0.005 + RS = 0.2338 + CJO = 81.449E-12 449E-12 449E-12 449E-12 + VJ = .78547 + M www.datasheetarchive.com/download/44732869-596959ZC/30910.zip (PZU9_1B2A.prm) |
NXP | 23/10/2012 | 372.47 Kb | ZIP | 30910.zip |
| Unijunction P-Type" ; newattr "$commentge" = "Transistor Unijunction P-Typ" ; pin ( e,b1,b2 " = "Transistor Unijunction N-Type" ; newattr "$commentge" = "Transistor Unijunction N-Typ" ; pin ( e,b1,b2 "$commentge" = "Transistor Unijunction N-Typ" ; newattr "$type" = "2N2646 2N2646 2N2646 2N2646" ; pin ( e,b1,b2) ; xlat ( e,b1,b " ; pin ( e,b1,b2) ; xlat ( e,b1,b2) to ( 1, 3, 2) ; } /* Transistor Darlington PNP */ part trdp " ; newattr "$commentge" = "Doppel-Diode" ; pin ( a, k) ; } /* Zener Diodes / Zener-Diodes */ part dz www.datasheetarchive.com/download/48664731-299145ZC/bae65022linux.tgz |
Kaleidoscope | 22/08/2005 | 11421.08 Kb | TGZ | bae65022linux.tgz |
| .149 L2 1.27 1.4 0.050 0.055 L L1 B2 B D E A C2 C A1 L2 e P011P5/E P011P5/E P011P5/E P011P5/E TO-262 (I HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES n 100% AVALANCHE TESTED n VERY LOW GATE integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD -SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %. 2. Pulse width limited by -TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7394.htm |
STMicroelectronics | 30/11/2000 | 11.4 Kb | HTM | 7394.htm |
| .055 L L1 B2 B D E A C2 C A1 L2 e P011P5/E P011P5/E P011P5/E P011P5/E TO-262 (I 2 PAK) MECHANICAL DATA HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES n 100% AVALANCHE TESTED n VERY LOW GATE integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD -SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %. 2. Pulse width limited by -TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7400.htm |
STMicroelectronics | 19/01/2001 | 11.4 Kb | HTM | 7400.htm |
| .515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 L L1 B2 B D E A C2 C A1 L2 e P n EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES n 100% AVALANCHE TESTED n integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD ) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration ) BV GSO (255) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7246.htm |
STMicroelectronics | 20/10/2000 | 12.1 Kb | HTM | 7246.htm |