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B65819N250A48 TDK Epcos FERRITE CORE visit Digikey Buy
IXLF19N250A IXYS Corporation Insulated Gate Bipolar Transistor, 19A I(C), 2500V V(BR)CES, N-Channel, ISOPLUS I4-PAC-3 visit Digikey Buy

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19N250A

Catalog Datasheet MFG & Type PDF Document Tags

IXLF19N250A

Abstract: IXLF 19N220A IXLF 19N250A High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IC25 = 32 A , TC = 25°C Conditions TVJ = 25°C to 150°C IXLF 19N220A IXLF 19N250A Maximum Ratings 2200 2500 ± 20 32 , IXLF 19N250A Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL 1 mA; 50/60 Hz , IXLF 19N220A IXLF 19N250A 80 A IC TJ = 25°C VGE = 17 V 50 15 V A IC 40 30 TJ = 125 , °C VCEK < VCES 15 VGE 60 10 40 IXLF 19N250A IXLF 19N220A 5 20 0 0 50 100 QG 0
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E153432

19n250

Abstract: IXLF19N250 IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Symbol Conditions VCES , standard outline - UL registered E72873 1-4 IXLF 19N250A Component Symbol Dimensions in mm , 2-4 © 2004 IXYS All rights reserved IXLF 19N250A 80 A IC 50 VGE = 17 V TJ = 25 , 19N250A 50 60 200 VCE = 1500 V VGE = ±15 V mJ 40 ns RG = 47 TJ = 125°C Eon
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19n250 IXLF19N250 19N25 ixlf 19n250a IXLF19N 19N2

IXLF19N250A

Abstract: 19n250 IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Symbol Conditions VCES , standard outline - UL registered E72873 1-4 IXLF 19N250A Component Conditions Maximum , 0.0394") 2-4 IXLF 19N250A 100 A IC 50 VGE = 17 V TJ = 25°C 80 13 V VGE = 17 , Fig. 6 Reverse Biased Safe Operating Area RBSOA 0527 IC 7 VCE 3-4 IXLF 19N250A 50
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IXLF19N250A

Abstract: IXLT 19N250A High Voltage IGBT IXLT 19N250A VCES = 2500 V IC25 = 32 A VCE(sat) = 3.9 V , rights reserved IXLT 19N250A Component Symbol TVJ Tstg VISOL IISOL 1 mA; 50/60 Hz Maximum tab , ~ o C g TO-268 Outline © 2004 IXYS All rights reserved IXLT 19N250A 80 A IC TJ = 25 , 15 VGE 60 10 40 IXLF 19N250A IXLF 19N220A 5 20 0 0 50 100 QG 150 , Fig. 6 Reverse Biased Safe Operating Area RBSOA © 2004 IXYS All rights reserved IXLT 19N250A 50
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19n250a

Abstract: 19N220A Advanced Technical Information IXLF 19N220A IC25 = 32 A IXLF 19N250A VCES = 2200/2500 V High Voltage IGBT in High Voltage ISOPLUS i4-PACTM VCE(sat)= 3.2 V tf = 50 ns 1 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings IXLF 19N220A IXLF 19N250A 2200 2500 70 1200 Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 19 A , 19N220A IXLF 19N250A Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum
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isoplus high voltage igbt

19N220A

Abstract: 19n250a IXLF 19N220A IXLF 19N250A B6 - 2 New product © 2000 IXYS All rights reserved B6 - 1 Advanced Technical Information IXLF 19N220A IC25 = 32 A IXLF 19N250A VCES = 2200/2500 V High Voltage , Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings IXLF 19N220A IXLF 19N250A , 19N220A IXLF 19N250A Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum
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igbt clip

19N220A

Abstract: IXLF 19N220A IXLF 19N250A High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IC25 = 32 A , TC = 25°C Conditions TVJ = 25°C to 150°C IXLF 19N220A IXLF 19N250A Maximum Ratings 2200 2500 ± 20 32 , conditions and dimensions. © 2003 IXYS All rights reserved 1-4 342 IXLF 19N220A IXLF 19N250A , 19N220A IXLF 19N250A 80 A IC TJ = 25°C VGE = 17 V 50 15 V A IC 40 30 TJ = 125°C VGE = 17 V , 15 VGE 60 10 40 IXLF 19N250A IXLF 19N220A 5 20 0 0 50 100 QG 0 150 nC 0
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IXLF19N250

Abstract: 19N250 IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Symbol Conditions VCES , and dimensions. © 2005 IXYS All rights reserved 0.5 K/W 0527 RthJC 1-4 IXLF 19N250A , Symbol Dimensions in mm (1 mm = 0.0394") 2-4 IXLF 19N250A 100 A IC 50 VGE = 17 V , Biased Safe Operating Area RBSOA 0527 IC 7 VCE 3-4 IXLF 19N250A 50 60 200 VCE
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high voltage igbt

Abstract: Advanced Technical Information High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IXLF 19N220A IC25 = 32 A IXLF 19N250A VCES = 2200/2500 V VCE(sat)= 3.2 V tf = 50 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXLF 19N220A IXLF 19N250A Maximum , conditions and dimensions. © 2000 IXYS All rights reserved 1-2 022 IXLF 19N220A IXLF 19N250A
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mj350

Abstract: TF010 High Voltage IGBT IXLV 19N250AS IC25 = 32 A VCES = 2500 V VCE(sat) = 3.9 V PLUS220SMD , rights reserved 1-4 IXLV 19N250AS PLUS220SMD(HV) Outline Component Symbol TVJ Tstg VISOL FC , IXLV 19N250AS 80 A IC TJ = 25°C VGE = 17 V 50 15 V A IC 40 30 TJ = 125°C VGE = 17 V 15 , ICM RG = 47 TJ = 125°C VCEK < VCES 15 VGE 60 10 40 IXLF 19N250A IXLF 19N220A 5 20 , Operating Area RBSOA 3-4 IXLV 19N250AS 50 mJ 200 VCE = 1500 V VGE = ±15 V RG = 47 TJ = 125°C 60
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mj350 TF010

12N60c equivalent

Abstract: 13N50 equivalent 40N160 IXLF 19N220A IXLF 19N250A phaseleg phaseleg boost single single single single single single NPT
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OCR Scan
12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 004II 24N60CD1 ISOPLUS220TM US247TM 247TM 10-06SC 16-06SC 22-06N1

7N60B equivalent

Abstract: 18N50 equivalent 40N60C Ø IXKR 47N60C5 Ø IXKT 70N60C5 Ø IXKU 5-505 IXLF 19N250A Ø IXRA 15N120 Ø IXRB 5-506 IXRH
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7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor MO-153 MS-013 MS-012 5M-1994 MO-229