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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Adjacent Channel Power Rejection -57 dBc ACPR @1980kHz, POUT =Max POUT 10:1 6:1 Noise , specified) -55 10:1 6:1 dBc ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc ... | Original |
6 pages, |
RF3117 RF Micro Devices 900MHZ qualcomm cdma chipset diagram qualcomm RF3117 abstract |
| Abstract: -54.5 , 10:1 6:1 dBc ACPR @1980kHz, POUT =Max POUT 21 -35 -40 16 No damage. No ... | Original |
6 pages, |
RF3100-2 qualcomm RF device specification block diagram of qualcomm 900MHZ qualcomm chipsets CDMA2000/1X RF3100-2 abstract |
| Abstract: 1.8:1 Adjacent Channel Power Rejection -57 dBc ACPR@1980kHz, POUT =Max POUT 10:1 6:1 , =Max POUT -62 -55 10:1 6:1 dBc ACPR@1980kHz, POUT =Max POUT No damage. No oscillations. ... | Original |
6 pages, |
RF3117 hemt Ee CDMA2000/1X RF3117 abstract |
| Abstract: -44 dBc ACPR@885kHz -58 -56 dBc ACPR@1980kHz 2:1 Output VSWR 10:1 Noise , ACPR@1980kHz 2:1 No damage. 6:1 2 of 12 10:1 No oscillations. >-70dBc 7628 Thorndike Road , Input VSWR dBc ACPR @ 885kHz -56 dBc ACPR @ 1980kHz 2:1 Output VSWR 10:1 No , ) -52 Input VSWR dBc ACPR @ 885kHz -70 dBc ACPR @ 1980kHz 2:1 Output VSWR 10 ... | Original |
12 pages, |
RF2192PCBA-41X RF2192 IPC-SM-782 CDMA450 C140 C100 450MHz CDMA Handset Circuit Diagram RF21923V RF21923V abstract |
| Abstract: dBm -44 % dBc POUT =29dBm ACPR@885kHz -56 dBc ACPR@1980kHz 10:1 6:1 Noise , -46 mA dBc POUT =+16dBm (all currents included) ACPR@885kHz -58 dBc ACPR@1980kHz , -56 2:1 dBc ACPR @ 1980kHz 29 Input VSWR Output VSWR 10:1 6:1 No damage. No , dBc ACPR @ 1980kHz 16 Input VSWR Output VSWR 10:1 6:1 No damage. No oscillations. ... | Original |
10 pages, |
RF2192PCBA-41X RF2192 JCDMA IPC-SM-782 C140 C100 450MHz CDMA Handset Circuit Diagram CDMA2000 RF2192 abstract |
| Abstract: % dBc POUT =29dBm ACPR@885kHz -56 dBc ACPR@1980kHz 10:1 6:1 Noise Power -133 , dBc POUT =+16dBm (all currents included) ACPR@885kHz -58 dBc ACPR@1980kHz 10:1 6:1 , ACPR @ 1980kHz 29 Input VSWR Output VSWR 10:1 6:1 No damage. No oscillations. > -70dBc , 1980kHz 16 Input VSWR Output VSWR 10:1 6:1 No damage. No oscillations. > -70dBc DC ... | Original |
10 pages, |
IPC-SM-782 C140 C100 RF2192 CDMA2000 RF2192 abstract |
| Abstract: , *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band) - -55 -47 dBc - -66 -58 ... | Original |
1 pages, |
BA01207 BA01207 abstract |
| Abstract: ACPR@1980kHz. POUT =28dBm (IS-95 IS-95) -61 2:1 Input VSWR Output VSWR 10:1 6:1 Noise Power -136 , ACPR@885kHz. POUT =18dBm (IS-95 IS-95) -58 dBc ACPR@1980kHz. POUT =18dBm (IS-95 IS-95) 10:1 6:1 No damage. ... | Original |
6 pages, |
RO4003 RF6000-2 qualcomm chipsets 900MHZ CDMA2000/1X CDMA2000/1X abstract |
| Abstract: dBm -44 % dBc POUT =29dBm ACPR @885kHz -56 dBc ACPR @1980kHz 10:1 6:1 Noise , -46 mA dBc POUT =+16dBm (all currents included) ACPR @885kHz -58 dBc ACPR @1980kHz ... | Original |
8 pages, |
900MHZ RF2192 800MHz CDMA Handset Circuit Diagram CDMA2000 CDMA2000 abstract |
| Abstract: POUT =29dBm ACPR @885kHz -56 dBc ACPR @1980kHz 29 -58 2:1 Input VSWR Output VSWR , ) dBc ACPR @1980kHz 16 2:1 10:1 6:1 No damage. No oscillations. >-70dBc Rev A2 020222 ... | Original |
6 pages, |
900MHZ RF5107 RF5107 abstract |
| Abstract: Preliminary Product Description The XD010-12S-D4F XD010-12S-D4F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers for cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. Temperature Compensation 1 RF ... | Original |
5 pages, |
XD010-12S-D4F XD010-12S-D4F abstract |
| Abstract: IRL dB - -51 - ALT-1 at 2W CDMA (Single Carrier IS-95 IS-95, 9 Ch Fwd, Offset=1980KHz, ACPR ... | Original |
6 pages, |
XD010-12S-D4F Rogers 4350 datasheet kemet f 881 GSM repeater power amplifier module AN060 XD010-12S-D4FY XD010-12S-D4FY abstract |
| Abstract: , Offset=1980KHz, ACPR Integrated Bandwidth), 880MHz dB - -70 - rd 3 Order IMD at 12W PEP (Two ... | Original |
6 pages, |
XD010-12S-D4F Rogers 4350 datasheet GSM repeater circuit AN060 80021 200 watt schematics power amp XD010-12S-D4F abstract |
| Abstract: GaAs PA Module UN0231C UN0231C RF Power Amplifier Module Unit : mm 0.8 12 10 11 6 2 5 3 · High efficiency with super miniature, 0.08 cc package(7.5 Ã- 7.5 Ã- 1.7 mm) 4 s Absolute Maximum Ratings Ta=25°C 7 Ratings Unit Power supply voltage 1 *1 VDD1 6 V Power supply voltage 2 *1 VDD2 6 V Circuit current 1 IDD1 200 IDD2 800 mA Gate voltage VGG -4 V Max input power PIN 10 dBm 9 mA Circuit ... | Original |
1 pages, |
UN0231C UN0231C abstract |
| Abstract: SP1121NA SP1121NA Low Voltage CDMA/AMPS Power Amplifier (824-849 MHz) General Circuit Description T his Power Amplifier Module is a 3-volt Power Amplifier RFIC intended for use in CDMA cellular applications. The circuit is a two-stage class AB power amplifier with current mirror bias control circuitry for each of the two stages. It uses InGaP HBT technology. This module has a Normal/Low Power step select feature. The low power setting reduces the second stage quiescent current, allowing higher ef ... | Original |
9 pages, |
Samsung rf module RF Resistor 50 OHM MP SP1121NA SP1121NA abstract |