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Part : ERJ3RBD1800V Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 7,488 Best Price : £0.0104 Price Each : £0.0312
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Part : ERJ8ENF1800V Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 110,000 Best Price : £0.0070 Price Each : £0.0078
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Part : ERJP6WF1800V Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 5,800 Best Price : £0.0875 Price Each : £0.2840
Part : ERJPA3F1800V Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 2,462 Best Price : £0.0216 Price Each : £0.1220
Part : ERJU03F1800V Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 2,142 Best Price : £0.0173 Price Each : £0.0772
Part : ERJU06F1800V Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 3,454 Best Price : £0.0212 Price Each : £0.0954
Part : ERJ-3EKF1800V Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 39,600 Best Price : - Price Each : -
Part : ERJ-6ENF1800V Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 47,725 Best Price : - Price Each : -
Part : ERJ-8ENF1800V Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 29,900 Best Price : - Price Each : -
Part : ERJ-P06F1800V Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 9,420 Best Price : - Price Each : -
Part : 9050JCK2F1800V20 Supplier : Schneider Electric Manufacturer : Sager Stock : - Best Price : $104.59 Price Each : $115.81
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1800V

Catalog Datasheet MFG & Type PDF Document Tags

T1321N

Abstract: ) 1800V 0 1800V 1800V 2 102 1 10 2 4 6 102 2 4 6 103 2 4 6 , ITM [A] 4 2 6 4 2 VD VR(Spr) 1200V 0 1200V 1200V 1800V 0 1800V 1800V 103 6 4 103 } } VD VR(Spr) 1800V 0 1800V 1800V 6 700Hz 103 2 } 4 2 2 , VR(Spr) 1200V 0 1200V 1200V 1800V 0 1800V 1800V 103 6 4 } VD VR(Spr) 1800V 0 1800V 1800V 6 4 Ep=70Ws 50Ws 30Ws 2 20Ws 103 15Ws 6 10Ws 7Ws 4 2 2
Eupec
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T1321N
Abstract: Collector-Emitter Saturation Voltage VCC = 1800V, IC = 1500A, VGE = ±15V IC = 1500A, VGE = 15V, Tj = 25 , * Resistive Turn-on Delay Time td(on) VCC = 1800V, IC = 1500A, â'" 1.0 â'" μs , Turn-off Switching Energy Eon td(off) VCC = 1800V, IC = 1500A, â'" 2.7 â'" μs , Recovery Time trr â'" 0.55 â'" μs Reverse Recovery Current Irr VCC = 1800V , ) VCC = 1800V, IC = 1500A, â'" 1.0 â'" μs Load Turn-on Rise Time tr VGE Powerex
Original
CM1500HC-66R
Abstract: = 0V Cres - 1,4 - nF VGE = -15V . + 15V, VCE = 1800V VCE = 3300V, VGE = 0V, Tvj , / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 200 A, VCE = 1800V , °C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200 A, VCE = 1800V VGE = ±15V, RG = 7,5 , CGE = , ) turn off delay time (inductive load) IC = 200 A, VCE = 1800V VGE = ±15V, RG = 7,5 , CGE = 33nF, Tvj = , load) IC = 200 A, VCE = 1800V VGE = ±15V, RG = 7,5 , CGE = 33nF, Tvj = 25°C VGE = ±15V, RG = 7,5 , CGE Eupec
Original
Abstract: charge VGE = -15V . + 15V, V CE = 1800V QG - 15 - µC VCE = 3300V, V GE = 0V, Tvj = , . Last) turn on delay time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = , Last) rise time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, T vj , . Last) turn off delay time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = , Last) fall time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, T vj Eupec
Original

aic2300

Abstract: kl2 diode VGE = -15V . + 15V, VCE = 1800V QG - 22 - µC Kollektor-Emitter Reststrom , . Last) turn on delay time (inductive load) typ. max. IC = 1200 A, VCC = 1800V VGE = ±15V, RG , load) 700 ns 700 ns - 450 ns - 450 ns IC = 1200 A, VCC = 1800V , = 125°C IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C tr VGE , µAs - 430 - mWs - 1150 - mWs IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2W
Eupec
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FZ1200R33KL2 aic2300 kl2 diode FZ 44 NS 330nF
Abstract: ,Tvj = 25°C,V CE = 25V, V GE = 0V Cres - 2,7 - nF VGE = -15V . + 15V, V CE = 1800V , 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = , ) turn off delay time (inductive load) IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = , load) IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C VGE = ±15V, RG = 3,6 , CGE Eupec
Original

hya 600

Abstract: FZ800R33KF2 -15V . + 15V, VCE = 1800V QG - 15 - µC VCE = 3300V, VGE = 0V, Tvj = 25°C ICES , (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C td,on VGE = , ) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C tr VGE = ±15V, RG = 1,8 , ) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C td,off VGE = ±15V, RG = , , VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C tf VGE = ±15V, RG = 1,8 , CGE =
Eupec
Original
FZ800R33KF2 hya 600 FZ 76 1500

FZ1200R33KF2

Abstract: IGBT FZ 1200 nF Gateladung gate charge VGE = -15V . + 15V, VCE = 1800V QG - 22 - µC , = 1200 A, VCC = 1800V VGE = ±15V, RG = 2,7 , CGE = 220nF, T vj = 25°C td,on Anstiegszeit , - 0,48 - µs IC = 1200 A, VCC = 1800V Abschaltverzögerungszeit (ind. Last) turn off , = 1800V VGE = ±15V, RG = 2,7 , CGE = 220nF, T vj = 25°C tr VGE = ±15V, RG = 2,7 , CGE = , - 1400 - mWs IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,5 , CGE = 220 nF, Tvj = 125
Eupec
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FZ1200R33KF2 IGBT FZ 1200

FZ800R33KF2

Abstract: (inductive load) typ. max. IC = 800 A, VCE = 1800V VGE = ±15V, RG = 3,9 , CGE = 150nF, T vj = 25 , µs - 0,45 - µs - 0,48 - µs IC = 800 A, VCE = 1800V , = 125°C IC = 800 A, VCE = 1800V VGE = ±15V, RG = 3,9 , CGE = 150nF, T vj = 25°C tr VGE = , V IC = 800 A, VCE = 1800V, VGE = ±15V RG = 2,2 , CGE = 150, nF, Tvj = 125°C, L = 40nH IC = 800 A, VCE = 1800V, VGE = ±15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse RG
Eupec
Original

120-nF

Abstract: 4012 =25°C gate leakage current vCE =0V, vGE=20V, tvj=25°C turn-on time (inductive load) iC=400A,vCE=1800V,vL , =400A,vCE=1800V,vL= ± 15V CGE=120nF, R G=10, tvj=25°C CGE=120nF, R G=10, tvj=125°C fall time (inductive load) iC=400A,vCE=1800V,vL= ± 15V CGE=120nF, R G=10, tvj=25°C CGE=120nF, R G=10, tvj=125°C VCE(D , temperature storage temperature iC=400A, vCE= 1800V, vL = ±15V CGE=120nF, R G=5,6, tvj=125°C iC=400A, vCE= 1800V, vL = ±15V CGE=120nF, R G=10, tvj=125°C Eon Eoff iF=400A, vGE=0 V, t vj = 25°C iF
Eupec
Original
120-nF 4012 D59581 FD400R1 FD400R6 FD400R2

CM1000E4C-66R

Abstract: = 100kHz Tj = 25°C VCC = 1800V, IC = 1000A, VGE = ±15V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25 , IC = 1000A VGE = 15V VCC = 1800V IC = 1000A VGE = ±15V RG(on) = 2.4 Ls = 150nH 5 6 td(off) tf Eoff(10%) VCC = 1800V IC = 1000A VGE = ±15V RG(off) = 8.4 Ls = 150nH , %) VCC = 1800V IC = 1000A VGE = ±15V 2 RG(on) = 2.4 Ls = 150nH 25 Erec 26 µs A , 1800V, IC = 1000A Tj = 25°C 15 2 (V) 3 Cies (nF) 102 7 5 3 2 101 7 5
Mitsubishi
Original
CM1000E4C-66R
Abstract: VGE = -15V . + 15V, V CE = 1800V QG - 8 - µC VCE = 3300V, V GE = 0V, Tvj = 25 , IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C tf - 200 - ns , , V CC = 1800V, V GE = 15V RG = 3,6 , CGE = 68 nF, Tvj = 125°C, LS = 60nH IC = 400 A, V CC = 1800V , Chip lead resistance, terminals - chip - IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE , (inductive load) - IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C VGE = ±15V Eupec
Original
Abstract: VGE = -15V . + 15V, VCE = 1800V QG - 15 - µC VCE = 3300V, VGE = 0V, Tvj = 25 , Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , (induktive Last) rise time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF , . Last) turn off delay time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = , ) fall time (inductive load) IC = 800 A, VCC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25 Eupec
Original
Abstract: -15V . + 15V, VCE = 1800V QG - 15 - µC VCE = 3300V, VGE = 0V, Tvj = 25°C ICES , (inductive load) IC = 800 A, VCE = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C td,on VGE = , ) IC = 800 A, VCE = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C tr VGE = ±15V, RG = 1,8 , ) IC = 800 A, VCE = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C td,off VGE = ±15V, RG = , , VCE = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, Tvj = 25°C tf VGE = ±15V, RG = 1,8 , CGE = Eupec
Original

eupec igbt 3300v

Abstract: eupec FZ 900 R 12 temperature storage temperature iC=1200A, vCE= 1800V, vL= ±15V CGE=220nF, R G=1,8, tvj=125°C LS = 70nH iC=1200A, vCE= 1800V, vL= ±15V CGE=220nF, R G=3,3, tvj=125°C LS = 70nH iF=1200A, vGE=0 V, t vj = 25°C iF=1200A, vGE=0 V, t vj = 125°C iF=1200A, -diF/dt = 4800 A/µs vRM=1800V,vEG=10V,tvj=25°C vRM=1800V,vEG=10V,tvj=125°C iF=1200A, -diF/dt = 4800 A/µs vRM=1800V,vEG=10V,tvj=25°C vRM=1800V,vEG=10V,tvj , =1200A,vCE=1800V,vL= ±15V CGE=220nF, R G=1,8, tvj=25°C CGE=220nF, R G=1,8, tvj=125°C Speicherzeit
Eupec
Original
eupec igbt 3300v eupec FZ 900 R 12 transistor 6.z
Abstract: charge VGE = -15V . + 15V, V CE = 1800V QG - 15 - µC VCE = 3300V, V GE = 0V, Tvj = , . Last) turn on delay time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = , Last) rise time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, T vj , . Last) turn off delay time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = , Last) fall time (inductive load) IC = 800 A, V CC = 1800V VGE = ±15V, RG = 1,8 , CGE = 150nF, T vj Eupec
Original

IF400

Abstract: VGE = -15V . + 15V, V CE = 1800V QG - 8 - µC VCE = 3300V, V GE = 0V, Tvj = 25 , IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C tf - 200 - ns , , V CC = 1800V, V GE = 15V RG = 3,6 , CGE = 68 nF, Tvj = 125°C, LS = 60nH IC = 400 A, V CC = 1800V , Chip lead resistance, terminals - chip - IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE , (inductive load) - IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C VGE = ±15V
Eupec
Original
IF400
Abstract: charge VGE = -15V . + 15V, VCE = 1800V QG - 22 - µC VCE = 3300V, VGE = 0V, Tvj = , Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1 , °C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 â , °C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1 , °C Fallzeit (induktive Last) fall time (inductive load) IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 1,2 â Eupec
Original

IGBT FF 450

Abstract: FF 100 R 12 kf2 igbt - nF Gateladung gate charge VGE = -15V . + 15V, V CE = 1800V QG - 4 - µC , delay time (inductive load) IC = 200 A, V CC = 1800V VGE = ±15V, RG = 7,5 , CGE = 33nF, Tvj = 25 , (inductive load) IC = 200 A, V CC = 1800V VGE = ±15V, RG = 7,5 , CGE = 33nF, Tvj = 25°C tr VGE = , (inductive load) IC = 200 A, V CC = 1800V VGE = ±15V, RG = 7,5 , CGE = 33nF, Tvj = 25°C td,off VGE , ) IC = 200 A, V CC = 1800V VGE = ±15V, RG = 7,5 , CGE = 33nF, Tvj = 25°C tf VGE = ±15V, RG = 7,5
Eupec
Original
IGBT FF 450 FF 100 R 12 kf2 igbt

fd transistor

Abstract: VGE = -15V . + 15V, V CE = 1800V QG - 8 - µC VCE = 3300V, V GE = 0V, Tvj = 25 , - ns 270 - ns IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C tr IC = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C td,off - 1550 , °C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) max. IC = 400 A, V CC = 1800V VGE = ±15V , = 400 A, V CC = 1800V VGE = ±15V, RG = 3,6 , CGE = 68nF, Tvj = 25°C tf - 200 - ns
Eupec
Original
fd transistor

IRF 930

Abstract: , VCE = 1800V Tvj = 25°C f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V f = 1 MHz, Tvj = 25°C, VCE = 25 V , ) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.4,RGoff=1.8,VCE=1800V,CGE=150 nF 6000 , =800A,VCE=1800V,CGE=150nF 8000 7000 6000 Eon, Tvj = 125°C Eoff, Tvj = 125°C ZthJC : IGBT 10 5000 4000 , PreliminaryData Diode(Typical) switchinglossesDiode,Brake-Chopper(typical) Erec=f(RG) IF=800A,VCE=1800V 1600 Diode(Typical) switchinglossesDiode,Brake-Chopper(typical) Erec=f(IF) RGon=1.4,VCE=1800V 1600 Erec, Tvj
Infineon Technologies
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IRF 930 FD800R33KF2C
Abstract: ‡ Gate#2;charge VGE = -15 V . +15 V, VCE = 1800V QG #2; 28,0 #2; µC åè"µã'²ãƒ¼ãƒæµæ Infineon Technologies
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FD1000R33HE3-K
Abstract: · Gate#2;charge VGE = -15 V . +15 V, VCE = 1800V å部æ æžç"µé˜» Internal#2;gate#2;resistor Tvj = 25 Infineon Technologies
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FD400R33KF2C-K
Abstract: 40,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25°C f = 1 MHz, Tvj = 25 , ,Brake-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.7,RGoff=3.6,VCE=1800V,CGE=68nF 3000 Eon, Tvj = 125 , (typisch) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=400A,VCE=1800V,CGE , ,Brems-Chopper(typisch) switchinglossesDiode,Brake-Chopper(typical) Erec=f(RG) IF=400A,VCE=1800V 800 SchaltverlusteDiode,Brems-Chopper(typisch) switchinglossesDiode,Brake-Chopper(typical) Erec=f(IF) RGon=2.7,VCE=1800V Infineon Technologies
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Abstract: V . +15 V, VCE = 1800V QG #2; 28,0 #2; µC Interner#2;Gatewiderstand Infineon Technologies
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FD1000R33HL3-K
Abstract: 40,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25°C f = 1 MHz, Tvj = 25 , ,Brake-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.7,RGoff=3.6,VCE=1800V,CGE=68nF 3000 Eon, Tvj = 125 , (typisch) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=400A,VCE=1800V,CGE , ,Brems-Chopper(typisch) switchinglossesDiode,Brake-Chopper(typical) Erec=f(RG) IF=400A,VCE=1800V 800 SchaltverlusteDiode,Brems-Chopper(typisch) switchinglossesDiode,Brake-Chopper(typical) Erec=f(IF) RGon=2.7,VCE=1800V Infineon Technologies
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FD400R33KF2C

irf 930

Abstract: 80,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25°C f = 1 MHz, Tvj = 25 , ,Brake-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.4,RGoff=1.8,VCE=1800V,CGE=150 nF 6000 Eon, Tvj = 125 , (typisch) switchinglossesIGBT,Brake-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=800A,VCE=1800V,CGE , ,Brems-Chopper(typisch) switchinglossesDiode,Brake-Chopper(typical) Erec=f(RG) IF=800A,VCE=1800V 1600 SchaltverlusteDiode,Brems-Chopper(typisch) switchinglossesDiode,Brake-Chopper(typical) Erec=f(IF) RGon=1.4,VCE=1800V
Infineon Technologies
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Abstract: . +15 V, VCE = 1800V QG #2; 28,0 #2; µC å部æ æžç"µé˜» Internal#2;gate#2;resistor Infineon Technologies
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INVERTER 50 kW

Abstract: ff200r33kf2c 20,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25°C f = 1 MHz, Tvj = 25 , (typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=5.6,RGoff=7.5,VCE=1800V,CGE=33nF 1200 Eon, Tvj = 125°C Eoff , ,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=200A,VCE=1800V,CGE=33nF 1800 1600 1400 1200 1000 800 600 , ,Inverter(typical) Erec=f(RG) IF=200A,VCE=1800V 400 SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=5.6,VCE=1800V 400 Erec, Tvj = 125°C 350 300 250 E [mJ] 200 150
Infineon Technologies
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INVERTER 50 kW ff200r33kf2c FF200R33KF2C

FF400R33KF2C

Abstract: 400 A, VGE = 15 V IC = 40,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25°C f , ) switchinglossesIGBT-inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=2.7,RGoff=3.6,VCE=1800V, CGE=68nF 3000 Eon, Tvj = 125 , ) VGE=±15V,IC=400A,VCE=1800V,CGE=68nF 4000 3500 3000 10 2500 2000 1500 1000 500 0 0,1 0,001 i: 1 2 3 4 , ) Erec=f(IF) RGon=2.7,VCE=1800V 800 Erec, Tvj = 125°C 700 600 500 700 600 500 SchaltverlusteDiode-Wechselr.(typisch) switchinglossesdiode-inverter(typical) Erec=f(RG) IF=400A,VCE=1800V 800 Erec, Tvj = 125
Infineon Technologies
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FF400R33KF2C

IRF 870

Abstract: = 800 A, VGE = 15 V IC = 80,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25 , =1.4,RGoff=1.8,VCE=1800V,CGE=150 nF 6000 Eon, Tvj = 125°C Eoff, Tvj = 125°C 5000 4000 1000 800 600 2000 , (RG) VGE=±15V,IC=800A,VCE=1800V,CGE=150nF 8000 7000 6000 Eon, Tvj = 125°C Eoff, Tvj = 125°C ZthJC , PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=800A,VCE=1800V 1600 Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.4,VCE=1800V 1600 Erec, Tvj = 125°C 1400
Infineon Technologies
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IRF 870 FZ800R33KF2C
Abstract: 80,0 mA, VCE = VGE, Tvj = 25°C VGE = -15 V . +15 V, VCE = 1800V Tvj = 25°C f = 1 MHz, Tvj = 25 , ),Eoff=f(IC) VGE=±15V,RGon=1.4,RGoff=1.8,VCE=1800V,CGE=150 nF 6000 Eon, Tvj = 125°C Eoff, Tvj = 125°C 5000 , (typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=800A,VCE=1800V,CGE=150nF 8000 7000 6000 Eon, Tvj = 125°C Eoff , ,Inverter(typical) Erec=f(RG) IF=800A,VCE=1800V 1600 SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1.4,VCE=1800V 1600 Erec, Tvj = 125°C 1400 1200 1000 E [mJ] 800 Infineon Technologies
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