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175oC

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VCR3P

Abstract: VCR5P . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . , -72 Sorted Chips in Carriers Temperature Range -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC
Calogic
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03N06C

Abstract: RLD03N06CLE device, like most power MOSFET devices today, is limited to 175oC. The maximum voltage allowable can , 0.4 175oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.2 0 0 25 50 75 100 , 0.30 0.20 175oC 0.10 2.0 1.5 1.0 0.5 0 -80 0 0 1 2 3 4 VGS , GATE TO , to the device in the current limiting mode without exceeding the maximum specified 175oC junction , assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2, the expression
Intersil
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03n06

Abstract: MOSFET 60V 210A the limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The , , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 175oC OPERATION IN THIS , ) Typical Performance Curves 25oC 0.30 0.20 175oC 0.10 2.0 1.5 1.0 0.5 0 -80 0 , specified 175oC junction temperature. In practice this tells you how long you have to alleviate the , calculations. Making this assumption, limiting junction temperature to 175oC and using the TC calculated in
Fairchild Semiconductor
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IGBT DRIVER ignition coil automotive

Abstract: HGT1S20N36G3VL Internal Voltage Clamp G COLLECTOR (FLANGE) · ESD Gate Protection · TJ = 175oC · Ignition , +175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = , CONDITIONS IC = 10mA, VGE = 0V IC = 10mA VGE = 0V RGE = 1k TYP MAX UNITS TC = +175oC , +175oC 320 360 395 V TC = +25oC 335 365 395 V TC = -40oC , +175oC 330 360 390 V Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC =
Fairchild Semiconductor
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03N06C

Abstract: S 170 MOSFET TRANSISTOR to 175oC. The maximum voltage allowable can, therefore, be expressed as shown in Equation 1: JC , ) OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE 25oC DC 175oC OPERATION IN THIS AREA , , DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0.30 0.20 +175oC 0.10 0 0.0 5.0 PULSE TEST PULSE DURATION = , junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS , without exceeding the maximum specified 175oC junction temperature. In practice this tells you how long
Harris Semiconductor
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N06CL

Abstract: 3N06C limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The maximum , TEMPERATURE ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 175oC , PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.50 0.40 25oC 0.30 0.20 175oC 0.10 2.0 , mode without exceeding the maximum specified 175oC junction temperature. In practice this tells you , junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS
Fairchild Semiconductor
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rfp50n06

Abstract: DB223B between pulses. C. Try RFP45N06 Assume TJ = 175oC. Check to be sure UIS stress is within RFP45N06 , verify junction temperature is less than 175oC. Check to see if TJ 175oC. A. Try RFP3055 r DS(ON) = 2.1 × 0.028 (See Figure 7, RFP45N06 datasheet.) Assume TJ = 175oC. r DS(ON) = 0.059 , is not suitable for this application!) B. Try RFP22N10 Assume TJ = 175oC. Check to be sure UIS , if TJ 175oC. V DSS ­ V CC K = -IT × RL r DS(ON) = 2.1 × 0.022
Intersil
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rfp50n06 DB223B RFD16N05 rfp50n06 substitute 1654.C AN9321 ISO9000

L1N06CL

Abstract: l1n06cle limited to 175oC. The maximum voltage allowable can, therefore be expressed as: o ( 175 C ­ T , Limiting · ESD Protected, 2kV Minimum · Controlled Switching Limits EMI and RFI · 175oC Rated Junction , TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W HSTR = 0oC/W 20 1oC/W 15 2oC/W 10 5oC/W , WIDTH = 100ms TJ = 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 , Performance Curves 80 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W VDS, DRAIN TO SOURCE VOLTAGE (V
Intersil
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RLP1N06CLE TA09880 TB334 L1N06CL l1n06cle L1N06 l1n0 TO-220AA L1N06CLE

TRANSISTOR S1A 64

Abstract: 03N06C the limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The , , DRAIN CURRENT (A) OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE 25oC DC 175oC , 0.50 0.40 VDS , DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0.30 0.20 +175oC 0.10 0 0.0 5.0 , . Making this assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2 , to the device in the current limiting mode without exceeding the maximum specified 175oC junction
Harris Semiconductor
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RLD03N06CLE RLD03N06CLESM RLP03N06CLE TRANSISTOR S1A 64 03N06C AN7254

HGT1S20N35G3VL

Abstract: HGT1S20N35G3VLS ) · ESD Gate Protection · TJ = 175oC · Ignition Energy Capable JEDEC TO-262AA Description , +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = , UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = , 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC = +25oC 20 32 - V
Harris Semiconductor
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HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS T0-262AA HGT1S20N35G3VLS9A T0262 104 50v T0-220AB 20N35GVL

TC 9310 IC

Abstract: HGT1S20N35G3VL = 175oC · Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel , C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . , VGE = 0V RGE = 1k TYP MAX UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = , . Voltage BVCE(CL) IC = 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC =
Intersil
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TC 9310 IC COIL IGNITION T0263AB Intersil ignition IGBT T0-263AB TA49076

20n36

Abstract: Protection · TJ = 175oC · Ignition Energy Capable Packages JEDEC TO-220AB E C G COLLECTOR (FLANGE , . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS , SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau , Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current BVCE(CL) TC = +175oC TC = +25oC TC =
Fairchild Semiconductor
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20n36 HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL 20N36GVL TA49296

L1N06CL

Abstract: L1N06CLE RLP1N06CLE device, like most Power MOSFET devices today, is limited to 175oC. The maximum voltage allowable , Minimum · Controlled Switching Limits EMI and RFI · 175oC Rated Junction Temperature · Logic Level Gate , VOLTAGE (V) 0 25 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 80 TJ = 175oC ILIM = , 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 TA, AMBIENT , RLP1N06CLE Rev. B RLP1N06CLE Typical Performance Curves 80 TJ = 175oC ILIM = 1.35A RJC = 4.17oC
Fairchild Semiconductor
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L1N06CL

Abstract: L1N06CLE RLP1N06CLE device, like most Power MOSFET devices today, is limited to 175oC. The maximum voltage allowable , Limits EMI and RFI · 175oC Rated Junction Temperature · Logic Level Gate · Related Literature - TB334 , TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W HSTR = 0oC/W 20 1oC/W 15 2oC/W 10 5oC/W , WIDTH = 100ms TJ = 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 , LIMITING RLP1N06CLE Rev. A RLP1N06CLE Typical Performance Curves 80 TJ = 175oC ILIM = 1.35A
Fairchild Semiconductor
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diode 6cl

20N35GVL

Abstract: HGT1S20N35G3VL = 175oC · Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel , VGE = 0V RGE = 1k TYP MAX UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = , . Voltage BVCE(CL) IC = 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC = , +175oC - - 250 µA IC = 10A VGE = 4.5V TC = +25oC - 1.3 1.6 V TC =
Fairchild Semiconductor
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20N35 IGBT DRIVER ignition coil automotive

14N36GVL

Abstract: TA49021 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS Collector to Emitter Avalanche Energy at L = , PARAMETERS Gate-Emitter Plateau Voltage Gate Charge BVCER UNITS TC = +175oC 320 355 , TC = +175oC 350 380 410 V IC = 10mA TC = +25oC 24 28 - V VCE = 250V RGE = 1k TC = +25oC - - 25 µA TC = +175oC - - 250 µA TC = +25oC - 1.25 1.45 V TC = +175oC - 1.15 1.6 V TC = +25oC - 1.6 2.2 V TC =
Intersil
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HGTP14N36G3VL HGT1S14N36G3VL HGT1S14N36G3VLS 14N36GVL HGT1S14N36G3VLS9A TA49021 intersil ignition 14N36

20N35GVL

Abstract: HGT1S20N35G3VL = 175oC · Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel , C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . , S TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = , . Voltage BVCE(CL) IC = 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC =
Fairchild Semiconductor
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ignition WITH IGBTS

14N36GVL

Abstract: 14n36 , TC = + 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS Collector to Emitter Avalanche Energy , TC = +175oC 320 355 400 V TC = +25oC 330 360 390 V 320 350 385 , nC IC = 7A RG = 1000 TC = +175oC 350 380 410 V IC = 10mA TC = +25oC 24 28 - V VCE = 250V RGE = 1k TC = +25oC - - 25 µA TC = +175oC - - 250 µA TC = +25oC - 1.25 1.45 V TC = +175oC - 1.15 1.6 V TC =
Harris Semiconductor
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IC100 LD26 14N36G

Intersil ignition IGBT

Abstract: 14n36 Logic Level Gate Drive · Internal Voltage Clamp · ESD Gate Protection · TJ = 175oC · Ignition Energy , 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS Collector to Emitter Avalanche Energy at L = , = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 7A, VCE = 12V IC = 7A, VCE = 12V IC = 7A RG = 1000 IC = 10mA VCE = 250V RGE = 1k TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC
Fairchild Semiconductor
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TO-263AB

Abstract: igbt ignition Internal Voltage Clamp G COLLECTOR (FLANGE) · ESD Gate Protection · TJ = 175oC · Ignition , VGE = 0V RGE = 1k TYP MAX UNITS TC = +175oC 345 380 415 V TC = +25oC 355 385 415 V 355 390 425 V TC = +175oC 320 360 395 V TC = , Breakdown Voltage BVCE(CL) IC = 10A RG = 1K TC = +175oC 330 360 415 V , +25oC - - 5 µA VCE = 250V TC = +175oC - - 250 µA IECS VEC = 24V
Fairchild Semiconductor
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TO-263AB igbt ignition ignition IGBTS

AN9321

Abstract: ierc heatsink - + 1 1.3 × 100 ­ 16 4 t AV = 1.64ms Capability at 4.0A, 175oC is 0.9ms. (From Figure 2 , between pulses. C. Try RFP45N06 Assume TJ = 175oC. Check to be sure UIS stress is within RFP45N06 , intermediate calculation values were truncated to aid readability. Capability at 4.0A, 175oC is 3.2ms. (From , verify junction temperature is less than 175oC. Check to see if TJ 175oC. A. Try RFP3055 r DS(ON) = 2.1 × 0.028 (See Figure 7, RFP45N06 datasheet.) Assume TJ = 175oC. r DS(ON) = 0.059
Fairchild Semiconductor
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ierc heatsink AN-7517 RFP70N06

20N36GVL

Abstract: 20n36 Protection · TJ = 175oC · Ignition Energy Capable Packages JEDEC TO-220AB E C G COLLECTOR (FLANGE , SYMBOL BVCES TEST CONDITIONS IC = 10mA, VGE = 0V TC = +175oC TC = +25oC TC = -40oC Collector-Emitter Breakdown Voltage BVCER IC = 10mA VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau , BVCE(CL) TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC 330 360 415 V BVECS ICES 28 1.1 36
Fairchild Semiconductor
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