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Catalog Datasheet | MFG & Type | Document Tags |

Abstract: . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . , -72 Sorted Chips in Carriers Temperature Range -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC ... | Calogic Original |
3 pages, |
vcr7n VCR5P-5510 VCR5P VCR3P TEXT |

Abstract: device, like most power MOSFET devices today, is limited to 175oC. The maximum voltage allowable can , 0.4 175oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.2 0 0 25 50 75 100 , 0.30 0.20 175oC 0.10 2.0 1.5 1.0 0.5 0 -80 0 0 1 2 3 4 VGS , GATE TO , to the device in the current limiting mode without exceeding the maximum specified 175oC junction , assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2, the expression ... | Intersil Original |
9 pages, |
TB334 RLP03N06CLE RLD03N06CLESM9A RLD03N06CLESM RLD03N06CLE MOSFET 60V 210A 03N06C -222E TEXT |

Abstract: the limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The , , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 175oC OPERATION IN THIS , ) Typical Performance Curves 25oC 0.30 0.20 175oC 0.10 2.0 1.5 1.0 0.5 0 -80 0 , specified 175oC junction temperature. In practice this tells you how long you have to alleviate the , calculations. Making this assumption, limiting junction temperature to 175oC and using the TC calculated in ... | Fairchild Semiconductor Original |
10 pages, |
TB334 RLP03N06CLE RLD03N06CLESM9A RLD03N06CLESM RLD03N06CLE MOSFET 60V 210A 65E6 03N06C 03n06 TEXT |

Abstract: Internal Voltage Clamp G COLLECTOR (FLANGE) · ESD Gate Protection · TJ = 175oC · Ignition , +175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = , CONDITIONS IC = 10mA, VGE = 0V IC = 10mA VGE = 0V RGE = 1k TYP MAX UNITS TC = +175oC , +175oC 320 360 395 V TC = +25oC 335 365 395 V TC = -40oC , +175oC 330 360 390 V Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC = ... | Fairchild Semiconductor Original |
7 pages, |
IGBT DRIVER ignition coil automotive IC100 HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL 20N36GVL TEXT |

Abstract: to 175oC. The maximum voltage allowable can, therefore, be expressed as shown in Equation 1: JC , ) OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE 25oC DC 175oC OPERATION IN THIS AREA , , DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0.30 0.20 +175oC 0.10 0 0.0 5.0 PULSE TEST PULSE DURATION = , junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS , without exceeding the maximum specified 175oC junction temperature. In practice this tells you how long ... | Harris Semiconductor Original |
13 pages, |
transistor oc 76 03N06CLE 2.54mm Header 15mm 742E-12 AN7254 MOSFET 60V 210A RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE Transistor 0235 BF 0301E 03n06 S 170 MOSFET TRANSISTOR 03N06C TEXT |

Abstract: limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The maximum , TEMPERATURE ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 175oC , PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX 0.50 0.40 25oC 0.30 0.20 175oC 0.10 2.0 , mode without exceeding the maximum specified 175oC junction temperature. In practice this tells you , junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS ... | Fairchild Semiconductor Original |
10 pages, |
TB334 03N06C 742E-12 MOSFET 60V 210A RLD03N06CLE RLD03N06CLESM RLP03N06CLE 03n06 diode ESM 182 3N06C N06CL TEXT |

Abstract: between pulses. C. Try RFP45N06 RFP45N06 Assume TJ = 175oC. Check to be sure UIS stress is within RFP45N06 RFP45N06 , verify junction temperature is less than 175oC. Check to see if TJ 175oC. A. Try RFP3055 RFP3055 r DS(ON) = 2.1 × 0.028 (See Figure 7, RFP45N06 RFP45N06 datasheet.) Assume TJ = 175oC. r DS(ON) = 0.059 , is not suitable for this application!) B. Try RFP22N10 RFP22N10 Assume TJ = 175oC. Check to be sure UIS , if TJ 175oC. V DSS V CC K = -IT × RL r DS(ON) = 2.1 × 0.022 ... | Intersil Original |
8 pages, |
RFP70N06 AN9321 DIODE DATABOOK RFP22N10 RFP3055 RFP45N06 rfp50n06 substitute 1654.C RFD16N05 rfp50n06 TEXT |

Abstract: limited to 175oC. The maximum voltage allowable can, therefore be expressed as: o ( 175 C T , Limiting · ESD Protected, 2kV Minimum · Controlled Switching Limits EMI and RFI · 175oC Rated Junction , TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W HSTR = 0oC/W 20 1oC/W 15 2oC/W 10 5oC/W , WIDTH = 100ms TJ = 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 , Performance Curves 80 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W VDS, DRAIN TO SOURCE VOLTAGE (V ... | Intersil Original |
7 pages, |
TO-220AA TB334 RLP1N06CLE L1N06 l1n0 TA09880 l1n06cle L1N06CL TEXT |

Abstract: the limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The , , DRAIN CURRENT (A) OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE 25oC DC 175oC , 0.50 0.40 VDS , DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0.30 0.20 +175oC 0.10 0 0.0 5.0 , . Making this assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2 , to the device in the current limiting mode without exceeding the maximum specified 175oC junction ... | Harris Semiconductor Original |
9 pages, |
RLP03N06CLE RLD03N06CLESM RLD03N06CLE AN7254 03N06C TRANSISTOR S1A 64 TEXT |

Abstract: ) · ESD Gate Protection · TJ = 175oC · Ignition Energy Capable JEDEC TO-262AA Description , +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = , UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = , 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC = +25oC 20 32 - V ... | Harris Semiconductor Original |
5 pages, |
T0263AB T0262 T0-262AA HGT1S20N35G3VLS9A 104 50v HGTP20N35G3VL HGT1S20N35G3VLS HGT1S20N35G3VL TEXT |

Abstract: Minimum · Controlled Switching Limits EMI and RFI · 175oC Rated Junction Temperature · Logic Level Gate , VOLTAGE (V) 0 25 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 80 TJ = 175oC ILIM = , 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 TA, AMBIENT , RLP1N06CLE RLP1N06CLE Rev. B RLP1N06CLE RLP1N06CLE Typical Performance Curves 80 TJ = 175oC ILIM = 1.35A RJC = 4.17oC , 0 25 50 75 100 125 150 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W 60 40 DUTY ... | Fairchild Semiconductor Original |
8 pages, |
TO-220AA TB334 TA09880 RLP1N06CLE L1N06CLE L1N06CL TEXT |

Abstract: Limits EMI and RFI · 175oC Rated Junction Temperature · Logic Level Gate · Related Literature - TB334 TB334 , TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W HSTR = 0oC/W 20 1oC/W 15 2oC/W 10 5oC/W , WIDTH = 100ms TJ = 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 , LIMITING RLP1N06CLE RLP1N06CLE Rev. A RLP1N06CLE RLP1N06CLE Typical Performance Curves 80 TJ = 175oC ILIM = 1.35A , = 100ms 0 25 50 75 100 125 150 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W 60 ... | Fairchild Semiconductor Original |
8 pages, |
TB334 TA09880 RLP1N06CLE L1N06CLE diode 6cl L1N06CL TEXT |

Abstract: = 175oC · Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel , C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . , S TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = , . Voltage BVCE(CL) IC = 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC = ... | Fairchild Semiconductor Original |
8 pages, |
TA49076 T0263AB T0-262AA ignition WITH IGBTS HGT1S20N35G3VLS9A HGTP20N35G3VL HGT1S20N35G3VLS HGT1S20N35G3VL 20N35GVL TEXT |