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175oC

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . , -72 Sorted Chips in Carriers Temperature Range -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC -55oC to +175oC ... Calogic
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3 pages,
35.94 Kb

vcr7n VCR5P-5510 VCR5P VCR3P TEXT
datasheet frame
Abstract: device, like most power MOSFET devices today, is limited to 175oC. The maximum voltage allowable can , 0.4 175oC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.2 0 0 25 50 75 100 , 0.30 0.20 175oC 0.10 2.0 1.5 1.0 0.5 0 -80 0 0 1 2 3 4 VGS , GATE TO , to the device in the current limiting mode without exceeding the maximum specified 175oC junction , assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2, the expression ... Intersil
Original
datasheet

9 pages,
93.34 Kb

TB334 RLP03N06CLE RLD03N06CLESM9A RLD03N06CLESM RLD03N06CLE MOSFET 60V 210A 03N06C -222E TEXT
datasheet frame
Abstract: the limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The , , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 175oC OPERATION IN THIS , ) Typical Performance Curves 25oC 0.30 0.20 175oC 0.10 2.0 1.5 1.0 0.5 0 -80 0 , specified 175oC junction temperature. In practice this tells you how long you have to alleviate the , calculations. Making this assumption, limiting junction temperature to 175oC and using the TC calculated in ... Fairchild Semiconductor
Original
datasheet

10 pages,
424.3 Kb

TB334 RLP03N06CLE RLD03N06CLESM9A RLD03N06CLESM RLD03N06CLE MOSFET 60V 210A 65E6 03N06C TEXT
datasheet frame
Abstract: Internal Voltage Clamp G COLLECTOR (FLANGE) · ESD Gate Protection · TJ = 175oC · Ignition , +175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = , CONDITIONS IC = 10mA, VGE = 0V IC = 10mA VGE = 0V RGE = 1k TYP MAX UNITS TC = +175oC , +175oC 320 360 395 V TC = +25oC 335 365 395 V TC = -40oC , +175oC 330 360 390 V Emitter-Collector Breakdown Voltage BVECS IC = 10mA TC = ... Fairchild Semiconductor
Original
datasheet

7 pages,
265.31 Kb

IGBT DRIVER ignition coil automotive IC100 HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL 20N36GVL TEXT
datasheet frame
Abstract: to 175oC. The maximum voltage allowable can, therefore, be expressed as shown in Equation 1: JC , ) OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE 25oC DC 175oC OPERATION IN THIS AREA , , DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0.30 0.20 +175oC 0.10 0 0.0 5.0 PULSE TEST PULSE DURATION = , junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS , without exceeding the maximum specified 175oC junction temperature. In practice this tells you how long ... Harris Semiconductor
Original
datasheet

13 pages,
188.45 Kb

transistor oc 76 03N06CLE 2.54mm Header 15mm 742E-12 AN7254 MOSFET 60V 210A RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE Transistor 0235 BF 0301E 03n06 S 170 MOSFET TRANSISTOR 03N06C TEXT
datasheet frame
Abstract: limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The maximum , TEMPERATURE ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 175oC , PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX 0.50 0.40 25oC 0.30 0.20 175oC 0.10 2.0 , mode without exceeding the maximum specified 175oC junction temperature. In practice this tells you , junction temperature to 175oC and using the TC calculated in Equation 2, the expression for maximum VDS ... Fairchild Semiconductor
Original
datasheet

10 pages,
192.88 Kb

TB334 742E-12 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE diode ESM 182 3N06C N06CL TEXT
datasheet frame
Abstract: between pulses. C. Try RFP45N06 RFP45N06 Assume TJ = 175oC. Check to be sure UIS stress is within RFP45N06 RFP45N06 , verify junction temperature is less than 175oC. Check to see if TJ 175oC. A. Try RFP3055 RFP3055 r DS(ON) = 2.1 × 0.028 (See Figure 7, RFP45N06 RFP45N06 datasheet.) Assume TJ = 175oC. r DS(ON) = 0.059 , is not suitable for this application!) B. Try RFP22N10 RFP22N10 Assume TJ = 175oC. Check to be sure UIS , if TJ 175oC. V DSS ­ V CC K = -IT × RL r DS(ON) = 2.1 × 0.022 ... Intersil
Original
datasheet

8 pages,
299.77 Kb

RFP70N06 AN9321 DIODE DATABOOK RFP22N10 RFP3055 RFP45N06 rfp50n06 substitute 1654.C RFD16N05 rfp50n06 TEXT
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Abstract: limited to 175oC. The maximum voltage allowable can, therefore be expressed as: o ( 175 C ­ T , Limiting · ESD Protected, 2kV Minimum · Controlled Switching Limits EMI and RFI · 175oC Rated Junction , TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W HSTR = 0oC/W 20 1oC/W 15 2oC/W 10 5oC/W , WIDTH = 100ms TJ = 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 , Performance Curves 80 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W VDS, DRAIN TO SOURCE VOLTAGE (V ... Intersil
Original
datasheet

7 pages,
47.42 Kb

TO-220AA TB334 RLP1N06CLE L1N06 l1n0 TA09880 l1n06cle L1N06CL TEXT
datasheet frame
Abstract: the limiting current. This device, like most power MOSFET devices today, is limited to 175oC. The , , DRAIN CURRENT (A) OPERATION IN THIS AREA IS LIMITED BY JUNCTION TEMPERATURE 25oC DC 175oC , 0.50 0.40 VDS , DRAIN-TO-SOURCE VOLTAGE (V) +25oC 0.30 0.20 +175oC 0.10 0 0.0 5.0 , . Making this assumption, limiting junction temperature to 175oC and using the TC calculated in Equation 2 , to the device in the current limiting mode without exceeding the maximum specified 175oC junction ... Harris Semiconductor
Original
datasheet

9 pages,
116.15 Kb

RLP03N06CLE RLD03N06CLESM RLD03N06CLE AN7254 03N06C TRANSISTOR S1A 64 TEXT
datasheet frame
Abstract: ) · ESD Gate Protection · TJ = 175oC · Ignition Energy Capable JEDEC TO-262AA Description , +175oC . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L = , UNITS TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = , 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC = +25oC 20 32 - V ... Harris Semiconductor
Original
datasheet

5 pages,
121.13 Kb

T0263AB T0262 T0-262AA HGT1S20N35G3VLS9A 104 50v HGTP20N35G3VL HGT1S20N35G3VLS HGT1S20N35G3VL TEXT
datasheet frame
Abstract: Minimum · Controlled Switching Limits EMI and RFI · 175oC Rated Junction Temperature · Logic Level Gate , VOLTAGE (V) 0 25 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 80 TJ = 175oC ILIM = , 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 TA, AMBIENT , RLP1N06CLE RLP1N06CLE Rev. B RLP1N06CLE RLP1N06CLE Typical Performance Curves 80 TJ = 175oC ILIM = 1.35A RJC = 4.17oC , 0 25 50 75 100 125 150 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W 60 40 DUTY ... Fairchild Semiconductor
Original
datasheet

8 pages,
354.54 Kb

TO-220AA TB334 TA09880 RLP1N06CLE L1N06CLE L1N06CL TEXT
datasheet frame
Abstract: Limits EMI and RFI · 175oC Rated Junction Temperature · Logic Level Gate · Related Literature - TB334 TB334 , TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W HSTR = 0oC/W 20 1oC/W 15 2oC/W 10 5oC/W , WIDTH = 100ms TJ = 175oC, ILIM = 1.35A, RJC = 4.17oC/W 0 25 50 75 100 125 150 175 , LIMITING RLP1N06CLE RLP1N06CLE Rev. A RLP1N06CLE RLP1N06CLE Typical Performance Curves 80 TJ = 175oC ILIM = 1.35A , = 100ms 0 25 50 75 100 125 150 TJ = 175oC ILIM = 1.35A RJC = 4.17oC/W 60 ... Fairchild Semiconductor
Original
datasheet

8 pages,
424.71 Kb

TB334 TA09880 RLP1N06CLE L1N06CLE diode 6cl L1N06CL TEXT
datasheet frame
Abstract: = 175oC · Ignition Energy Capable JEDEC TO-262AA Description EMITTER This N-Channel , C . . . . . . . . . . . . . . . . . . . . . ISCIS At L = 2.3mH, TC = +175oC . . . . . . . . . . . . , S TC = +175oC 310 345 380 V TC = +25oC 320 350 380 V 320 355 390 V TC = +175oC 300 340 375 V TC = +25oC 315 345 375 V TC = , . Voltage BVCE(CL) IC = 10A RG = 0 TC = +175oC 325 360 395 V IC = 10mA TC = ... Fairchild Semiconductor
Original
datasheet

8 pages,
129.71 Kb

TA49076 T0263AB T0-262AA ignition WITH IGBTS HGT1S20N35G3VLS9A HGTP20N35G3VL HGT1S20N35G3VLS HGT1S20N35G3VL 20N35GVL TEXT
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