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16Mx18

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SMI288AFSUD01 September 14, 2001 288MByte RAMBUS® SO-RIMMTM - 16Mx18 based 160-pin SO-RIMM Features · · , LCOL0~LCOL4 LCTM/N LCFM/N LSCK LCMD SIN VREF U2 U3 . . . . . . . . . . . . . . .U8 16Mx18 Direct RDRAM 16Mx18 Direct RDRAM 16Mx18 Direct RDRAM 16Mx18 Direct RDRAM SIO0 SIO1 Smart Modular Technologies
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288MB
Abstract: Composition : 16Mx18 * 2(4)pcs · Used component type & part number : K4R881869D-HCT9/HCN9/HCM9/HCM8/HCK8 · # , · Composition : 16Mx18 * 8pcs · Used component type & part number : K4R881869D-HCT9/HCN9/HCM9/HCM8 Samsung Electronics
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MS18R1622 16K/32 MS18R1628DH0-CT9/CN9/CM9/CM8/CK8
Abstract: mil height · Composition : 16Mx18 * 2(4)pcs · Used component type & part number : K4R881869E-HCT9/HCM8/HCK8 · Feature :Double Sided Module & 1,230 mil height · Composition : 16Mx18 * 8pcs · Used -
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MS18R1628EH0-CT9/CM8/CK8
Abstract: Module & 1,375 mil height (CT9/CN9/CM9) · Composition : 16Mx18 * 2(4/8)pcs · Used component type & part , /CK8) Double Sided Module & 1,375 mil height (CT9/CN9/CM9) · Composition : 16Mx18 *16pcs · Used -
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MR18R162GDF0-CT9 MR18R1622 MR18R162GDF0-CT9/CN9/CM9/CM8/CK8 K4R881869D-FCT9/FCN9/FCM9/FCM8/FCK8
Abstract: . Infineon Technologies will manufacture RDRAM components in 4Mx18, 8Mx16, 8Mx18, 16Mx16 and 16Mx18 Infineon Technologies
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Rambus 100MH 133MH PC133 400MH 300MH 356MH
Abstract: · Feature : Single Sided Module & 1,375 mil height · Composition : 16Mx18 *4(6/8)pcs · Used , Module & 1,375 mil height · Composition : 16Mx18 *12(16)pcs · Used component type & part number 1 Samsung Electronics
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357mhz MR18R1624 MR18R162C K4R881869M-NCK8/NCK7/NCG6
Abstract: :Single Sided Module & 1,375 mil height · Composition : 16Mx18 * 2(4/8)pcs · Used component type & part , Composition : 16Mx18 *16pcs · Used component type & part number : K4R881869A-FCT9/FCN9/FCM8/FCK8 · # of -
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1066MH 800MH MR18R162GAF0-CT9/CN9/CM8/CK8
Abstract: 32Mx8 16Mx16 16Mx18 8Mx36 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16 TSOP2-66 TSOP2-66 BGA Toshiba
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TC58DVM72A1FTI0 tsop-56 samsung THNCF1G02DG tc58fvm5t2atg TSOP1-48 THNCF1G02DGI TC58DVM72A1FT00 TC58DVM82A1FT00 TC58DVM82A1FTI0 TC58DVM92A1FT00 TC58DVM92A1FTI0
Abstract: MN(P)18R1624(8)EF0 RAMBUS MODULE SERIAL PRESENCE DETECT NexModTM Module SPD Specification based on 288Mb RDRAM(E-die, 32s banks) Version 1.0 May 2004 Change History Version 0.1 (Feb. 04)-preliminary First Copy Based on the SAMSUNG 288Mb D-die NexMod Module SPD Version 1.0 (May 04) Eliminate "Preliminary" -1- Version 1.0 May 2004 MN(P)18R1624(8)EF0 RAMBUS MODULE SERIAL PRESENCE DETECT MN(P)18R1624(8)EF0-CT9/CM8 · Composition : 16Mx18 * 4(8)pcs · Used component type & part number Samsung Electronics
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K4R881869E-GCT9 K4R881869E K4R881869E-GCT9/GCM8
Abstract: MR18R1624(6/8)MN1-CK8/CK7/CG6 · Feature : Single Sided Module & 1,375 mil height · Composition : 16Mx18 *4 Samsung Electronics
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Abstract: mil height · Composition : 16Mx18 *12(16)pcs · Used component type & part number 1 Normal Package Samsung Electronics
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Abstract: Preliminary MS18R1622(4/8)EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMMTM based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V Overview Key Timing Parameters/Part Numbers The SO-RIMMTM module is a general purpose high-performance memory subsystem suitable for a broad range of applications including networking Samsung Electronics
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MS18R1622EH0-CT9 MS18R1622EH0-CM8 MS18R1622EH0-CK8 MS18R1624EH0-CT9 a80 marking code a64 marking code MS18R1624EH0-CM8
Abstract: Preliminary MR18R162WEG0 Change History Version 0.1 (January 2004) * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V Overview Key Timing Parameters/Part Numbers The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications computer memory, personal computers Samsung Electronics
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A76 MARKING CODE a77 package marking MARKING CODE B82 marking code B38 MARKING B17 marking a86
Abstract: MS18R1622(4/8)AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMMTM Module Datasheet. - Add 1066MHz-35 binning Page 0 Rev. 1.1 July 2002 MS18R1622(4/8)AH0 (16Mx18)*2(4/8)pcs SO-RIMMTM based on 288Mb A-die, 32s banks,16K/32ms Refresh, 2.5V Overview The SO-RIMMTM module is a general purpose high-performance memory Samsung Electronics
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256/288M
Abstract: MR18R162WDG0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications computer memory, personal computers, workstations, and other applications where high bandwidth Samsung Electronics
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MR18R162WDG0-CM8 B83 004 marking A70 marking code b84 MR18R162WDG0-CK8
Abstract: MR18R162WDG0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V Overview The RIMM TM module is a general purpose high- performance memory module suitable for use in a broad range of applications computer memory, personal computers, workstations, and other applications where high bandwidth and Samsung Electronics
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a74 marking code MARKING B82 B11 marking code MARKING B83 Device marking code B12 B13 B14 B15 B16 marking A45
Abstract: MS18R1622(4/8)DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMMâ"¢ Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMMâ"¢ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V Overview Key Timing Parameters/Part Numbers The SO-RIMMâ"¢ module is a general purpose high-performance memory subsystem suitable for a broad range of applications including networking systemsnetworking systems, digital con Samsung Electronics
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MS18R1622DH0-CN9 MS18R1622DH0-CM9 MS18R1622DH0-CM8 MS18R1622DH0-CK8 MS18R1624DH0-CT9 MS18R1624DH0-CN9
Abstract: MR18R162WEG0 Change History Version 0.1 (January 2004) * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications computer memory, personal computers Samsung Electronics
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b41 Marking MR18R162WEG0-CM8
Abstract: " Page 0 Rev.1.1a Nov. 2001 MS18R1624(8)MN0-CK8 Preliminary (16Mx18)*4(8)pcs Rambus RIMM based Samsung Electronics
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Abstract: MS18R1622(4/8)DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V Overview The SO-RIMM TM module is a general purpose high-performance memory subsystem suitable for a broad range of applications including networking systemsnetworking systems, digital con sumer systems, mobile "Thin and light" PCs, and Samsung Electronics
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DH0 165 marking B44
Abstract: (leadfree) Configuration: 32Mx9 16Mx18 8Mx36 Clock Cycle Timing: Speed Grade tRC tCK 18 15 , ,IS49NLC18160,IS49NLC36800 1.2 288Mb (16Mx18) Common I/O BGA Ballout (Top View) A B C D E F G H J K L M N P R GSI Technology
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GS82582DT19/37E-450/400/375/333 165-B GS82582DT19/37E GS82582DT E-300T GS82582DT37GE-450I
Abstract: 32Mx9 - 16Mx18 - 8Mx36 Clock Cycle Timing: Speed Grade tRC tCK -18 15 1.875 -25E 15 2.5 -25 20 2.5 -33 , 288Mb (16Mx18) Common I/O BGA Ball-out (Top View) A B C D E F G H J K L M N P R T U V 1 VREF VDD VTT GSI Technology
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GS82582D20/38E-550/500/450/400 GS82582D20/38E GS82582D38E-400T GS82582D38GE-400I 82582D
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