NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: mil height · Composition : 16Mx18 * 2(4)pcs · Used component type & part number : K4R881869E-HCT9/HCM8/HCK8 K4R881869E-HCT9/HCM8/HCK8 · Feature :Double Sided Module & 1,230 mil height · Composition : 16Mx18 * 8pcs · Used ... | Original |
4 pages, |
MS18R1622 MS18R1622 abstract |
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| Abstract: SMI288AFSUD01 SMI288AFSUD01 September 14, 2001 288MByte RAMBUS® SO-RIMMTM - 16Mx18 based 160-pin SO-RIMM Features · · , LCOL0~LCOL4 LCTM/N LCFM/N LSCK LCMD SIN VREF U2 U3 . . . . . . . . . . . . . . .U8 16Mx18 Direct RDRAM 16Mx18 Direct RDRAM 16Mx18 Direct RDRAM 16Mx18 Direct RDRAM SIO0 SIO1 ... | Original |
15 pages, |
SMI288AFSUD01 SMI288AFSUD01 abstract |
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| Abstract: Infineon Technologies will manufacture RDRAM components in 4Mx18, 8Mx16, 8Mx18, 16Mx16 and 16Mx18 ... | Original |
4 pages, |
Rambus datasheet abstract |
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| Abstract: :Single Sided Module & 1,375 mil height · Composition : 16Mx18 * 2(4/8)pcs · Used component type & part , Composition : 16Mx18 *16pcs · Used component type & part number : K4R881869A-FCT9/FCN9/FCM8/FCK8 K4R881869A-FCT9/FCN9/FCM8/FCK8 · # of ... | Original |
4 pages, |
MR18R1622 MR18R1622 abstract |
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| Abstract: · Feature : Single Sided Module & 1,375 mil height · Composition : 16Mx18 *4(6/8)pcs · Used , Module & 1,375 mil height · Composition : 16Mx18 *12(16)pcs · Used component type & part number 1 ... | Original |
4 pages, |
MR18R1624 MR18R1624 abstract |
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| Abstract: Module & 1,375 mil height (CT9/CN9/CM9) · Composition : 16Mx18 * 2(4/8)pcs · Used component type & part , /CK8) Double Sided Module & 1,375 mil height (CT9/CN9/CM9) · Composition : 16Mx18 *16pcs · Used ... | Original |
4 pages, |
MR18R162GDF0-CT9 MR18R1622 MR18R1622 abstract |
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| Abstract: MN(P)18R1624 18R1624(8)EF0 RAMBUS MODULE SERIAL PRESENCE DETECT NexModTM Module SPD Specification based on 288Mb RDRAM(E-die, 32s banks) Version 1.0 May 2004 Change History Version 0.1 (Feb. 04)-preliminary First Copy Based on the SAMSUNG 288Mb D-die NexMod Module SPD Version 1.0 (May 04) Eliminate "Preliminary" -1- Version 1.0 May 2004 MN(P)18R1624 18R1624(8)EF0 RAMBUS MODULE SERIAL PRESENCE DETECT MN(P)18R1624 18R1624(8)EF0-CT9/CM8 · Composition : 16Mx18 * 4(8)pcs · Used component type & part number ... | Original |
4 pages, |
18R1624 18R1624 abstract |
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| Abstract: MR18R1624 MR18R1624(6/8)MN1-CK8/CK7/CG6 · Feature : Single Sided Module & 1,375 mil height · Composition : 16Mx18 *4 ... | Original |
4 pages, |
MR18R1624 MR18R1624 abstract |
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| Abstract: mil height · Composition : 16Mx18 *12(16)pcs · Used component type & part number 1 Normal Package ... | Original |
4 pages, |
MR18R162C MR18R162C abstract |
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| Abstract: 32Mx8 16Mx16 16Mx18 8Mx36 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16 TSOP2-66 TSOP2-66 TSOP2-66 TSOP2-66 BGA ... | Original |
8 pages, |
NAND FLASH BGA 1GB SD CARD th58nvg SD-M256 toshiba Nand flash bga toshiba mcp nand toshiba nand flash 16Mb tc58fvm7t5btg TSOP2-32 SD-M512 SAMSUNG MCp nand ddr thncf128mdgi THNCF1G02DGI datasheet abstract |
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| Abstract: RLDRAM® 2 Memory: Addressing Networking Memory Requirements ISSI's RLDRAM 2 Memory is a reduced-latency DRAM that offers fast random access (20ns tRC), making RLDRAM ideal for communication applications ranging from access nodes to core routers. table applications. Additionally, RLDRAM's large density provides the flexibility to accommodate ever expanding lookup tables. Long-term Product Support Product life-cycles of 10 years or greater are common for many applications targeted by RLDRAM. ... | Original |
1 pages, |
RLDRAM datasheet abstract |
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| Abstract: Preliminary GS4288C09/18/36L GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction · Pin- and function-compatible with Micron RLDRAM® II · 533 MHz DDR operation (1.067Gb/s/pin data rate) · 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) · 8M x 36, 16M x 18, and 32M x 9 organizations available · 8 internal banks for concurrent ... | Original |
61 pages, |
A221 A211 GS4288C09/18/36L GS4288C09/18/36L abstract |
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| Abstract: Preliminary GS4288S09/18L GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM (LLDRAM) II 533 MHz300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction · Pin- and function-compatible with Micron RLDRAM® II · 533 MHz DDR operation (1.067Gb/s/pin data rate) · 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock frequency) · 16M x 18 and 32M x 9 organizations available · 8 banks · Reduced cycle time (15 ns at 533 MHz) · A ... | Original |
63 pages, |
A221 A211 A202 GS4288S09/18L GS4288S09/18L abstract |
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| Abstract: Direct RambusTM RIMMTM Module 32 MBytes (16M x 16/18) based on 4Mx16/18 Overview Key Timing Parameters/Part Numbers The Direct RambusTM RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The following table lists the frequency and latency bins available from RIMM modules. An optio ... | Original |
10 pages, |
HYMR1816-845 HYMR1816-840 HYMR1816-653 HYMR1616-845 HYMR1616-840 HYMR1616-653 a36 5pin diode u2 a54 datasheet abstract |
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