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Part Manufacturer Description Datasheet BUY
TMS416100-80DZ Texas Instruments 16MX1 FAST PAGE DRAM, 80ns, PDSO24 visit Texas Instruments
TMS416100-70DZ Texas Instruments 16MX1 FAST PAGE DRAM, 70ns, PDSO24 visit Texas Instruments
TMS416100-10DZ Texas Instruments 16MX1 FAST PAGE DRAM, 100ns, PDSO24 visit Texas Instruments
TMS416100-70DGA Texas Instruments 16MX1 FAST PAGE DRAM, 70ns, PDSO24, PLASTIC, TSOP-26/24 visit Texas Instruments
TMS416100P-60DGA Texas Instruments 16MX1 FAST PAGE DRAM, 60ns, PDSO24, PLASTIC, TSOP-26/24 visit Texas Instruments
TMS416100P-70DGA Texas Instruments 16MX1 FAST PAGE DRAM, 70ns, PDSO24, PLASTIC, TSOP-26/24 visit Texas Instruments

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Part : E2EM-X16MX1 2M Supplier : OMRON Manufacturer : Avnet Stock : - Best Price : $109.29 Price Each : $135.19
Part : GT1-ID16MX-1 Supplier : OMRON Manufacturer : Avnet Stock : - Best Price : $539.0900 Price Each : $666.5900
Part : GT1-OD16MX-1 Supplier : OMRON Manufacturer : Avnet Stock : - Best Price : $551.8900 Price Each : $682.4900
Part : E2EM-X16MX1 2M Supplier : OMRON Manufacturer : Newark element14 Stock : 14 Best Price : $151.6800 Price Each : $180.12
Part : E2EMX16MX12M Supplier : OMRON Manufacturer : Allied Electronics & Automation Stock : - Best Price : $148.22 Price Each : $148.22
Part : NAS516MX1 Supplier : - Manufacturer : Bisco Industries Stock : 6 Best Price : - Price Each : -
Part : E2EM-X16MX1 2M Supplier : OMRON Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : GT1-ID16MX-1 Supplier : OMRON Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : GT1-OD16MX-1 Supplier : OMRON Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : E2EMX16MX12M Supplier : OMRON Manufacturer : Onlinecomponentscom Stock : - Best Price : $125.54 Price Each : $125.54
Part : GT1ID16MX1 Supplier : OMRON Manufacturer : Onlinecomponentscom Stock : - Best Price : $490.1400 Price Each : $490.1400
Part : GT1OD16MX1 Supplier : OMRON Manufacturer : Onlinecomponentscom Stock : - Best Price : $501.41 Price Each : $501.41
Part : E2EM-X16MX12M Supplier : OMRON Manufacturer : Sager Stock : - Best Price : $105.34 Price Each : $116.42
Part : GT1-ID16MX-1 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : $558.60 Price Each : $617.40
Part : GT1-OD16MX-1 Supplier : OMRON Manufacturer : Sager Stock : - Best Price : $571.90 Price Each : $632.10
Part : PT16MX16F Supplier : Switchcraft Manufacturer : Sager Stock : - Best Price : $342.09 Price Each : $375.35
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16MX1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PcRam Description TS16M3660G Dimensions The TS16M3660G is a 16M by 36-bit dynamic RAM module with 8 pcs of 16Mx4 and 4pcs of 16Mx1 Side Millimeters Inches DRAMs assembled on the printed circuit board. A 107.95 ± 0.200 4.250 ± 0.008 The TS16M3660G is optimized for , DQ0~DQ35 /RAS2 A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS3 A0~A11 D0 /RAS 16Mx1 DRAM /WE A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS /CAS A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS2 /CAS Transcend Information
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TS16M3660G--

FPM DRAM 30-pin SIMM

Abstract: 16MX1 SMART ® SM5091610U4PUUU Modular Technologies November 21, 1996 16MByte (16M x 9) DRAM Module - 16Mx1 based 30-pin SIMM Part Numbers Features · · · · · · · · · · Standard Configuration Access Time Operation Mode Operating Voltage Refresh Device Physicals Lead , Diagram RAS# CAS# WE# A0~A11 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM PCAS# DQ0 DQ1 DQ2 DQ3
Smart Modular Technologies
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FPM DRAM 30-pin SIMM 16MX1 30 pin simm 16MX1-DRAM 9715 SMART Modular Technologies SM509161004PUUU SM509161014PUUU

1MX16BIT

Abstract: 16MX1 0 A . 16Mx1-bit, 5V, FP, 4K H Y 5 1 V 1 6 1 , . 16Mx1-bit, 5V. FP. 4K H Y 5 1 V 1 6 1 0 0 B .16Mx1-bit. 5V, FP, 4K H Y5117400A / H Y 5 1 1 6 4 0 0 A . 4M x4-bit, 5V, FP, 2K
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OCR Scan
1MX16BIT Y512800 Y512264
Abstract: MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh The HYM 5361600A M-Series is a 16Mx36-bit Fast , A S Y N C D R A M M O D U LE D A TA B O O K 16MX36 bit FP DRAM MODULE based on 16Mx1 DRAM, with , 16MX36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, SV, 4K-Refresh ABSOLUTE MAXIMUM RATINGS , FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh AC CHARACTERISTICS (T a =0°C to , YM 5361600A M- Series 16Mx36 bit FP ORAM MODULE based on 16Mx1 ORAM, with Parity, 5V, 4K -
OCR Scan
HYM5361600A HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG HYM5361600AM HYM53616Q0AMG
Abstract: ( -H Y U N D A I ) HYM5321600A M-Series 16MX32 bit FP DRAM MODULE based on 16Mx1 DRAM, SV , based on 16Mx1 DRAM, 5V, 4K-Refresh PIN ASSIGNMENTS # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 , 16Mx1 DRAM, 5V, 4K-Refresh ABSOLUTE MAXIMUM RATINGS SYMBOL TA TSTG VIN, VOUT VCC IOS PD PARAMETER , A M M O D U LE DATA BO O K 16Mx32 bit FP ORAM MODULE based on 16Mx1 DRAM, SV, 4K-Refresh AC , MODULE DATA BOOK H Y M 5321600 A M -Series 16Mx32 bit FP DRAM MODULE based on 16Mx1 DRAM, 5V, 4K -
OCR Scan
HYM5321600AM/ATM HYM5321600AMG/ATMG HYM5321600AM HYM5321600AMG HYM5321600ATM HYM5321600ATMG
Abstract: 64MB 72 PIN FPM DRAM SIMM With 16Mx4+16Mx1 5VOLT TS16M3660N#1; #1; Dimensions Description#1; The TS16M3660N is a 16M by 36-bit dynamic RAM module with 8 pcs of 16Mx4 and 4pcs of 16Mx1 Side Millimeters DRAMs assembled on the printed circuit board. A 107.95 ± 0.400 The TS16M3660N is , A0~A11 D0 16Mx1 /RAS DRAM /WE /CAS3 A0~A11 D0 16Mx1 /RAS DRAM /WE A0~A11 D0 16Mx1 /RAS DRAM /WE /CAS /CAS A0~A11 D0 16Mx1 /RAS DRAM /WE /CAS2 /CAS /CAS1 Transcend Information
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Abstract: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1 bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 , 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : KMM53632000BK/BKG - KM44C16100BK KM41C16000CK -
OCR Scan
KMM53632000BK 53632000BKG

km416c254

Abstract: MEMORY ICs FUNCTION GUIDE D ensity' P o w er KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# 3.3V±0.3V KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# EDO 60/70/80 Fast Page EDO 50/60/70 Fast Page J:40 Pin SOJ T:40 Pin TSOP-ll(Forward) 4M B/W 256KX16 5V±10% 16M bit 16Mx1 5V±10% KM41C16000B# KM41C16000B#-L 50/60/70 Fast Page(4K) K:24 Pin SOJ (300mil) S:24 Pin TSOP-ll(Forward) 3.3V±0.3V KM41V16000B# KM 41V 16000B#-L 4Mx4 5V±10% KM44C4000B# KM44C4000B#-L KM44C4100B# KM44C4100B#-L
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OCR Scan
km416c254 KM44C4003B KM44C4103B KM44C4004B KM44C4104B KM44C4005B KM44C4105B

604f

Abstract: 5V72A3204 .2 0 7 4M x4 B 1 7 16Mx1 B a s e d .- 2 2 7 16Mx1 B a s e d
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OCR Scan
604f 5V72A3204 1604f 532224C 53241Q 532410C 32414B 4MX32 36410C

4103B

Abstract: k i a 431 a 515 100 4B , K M 41 6C 120 4B K M 416V 1004B , K M 4 1 6V 1 20 4B . .16Mx1 16Mx1 4M x4, 5V
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OCR Scan
4103B k i a 431 a 515 416C 1000D 128KX8 4000C 1000C 1005C 1004C
Abstract: utilizes seventy-two CMOS (TSOP package), 16Mx1 dynamic RAMs and four buffers on two epoxy laminate , devices. 2. WE# through buffer to all devices. 3. Each 16Mx9 Block comprises of nine 16Mx1 DRAMs. VCC Smart Modular Technologies
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SM53632100UP5UU 128MB SM536321002P5UU SM536321004P5UU 74ABT16244

64 mega bit ram simm

Abstract: DRAM MODULE KMM5816000AK Fast Page Mode 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KM M 5816000AK is a 16M bit x 8 D ynam ic RAM high density m em ory module. The Sam sung KM M 5816000AK consists of eight CMOS 16Mx1 bit DRAMs in 24-pin SOJ packages mounted on a 3 0 -pin g la s s -e p o x y su b s tra te . A 0.2 2uF decoupling capacitor is , device is 16Mx1 DRAM , SOJ DRAM Part No. KM41C16000AK (300 mil) Revision History RevO.O : 22 Dec 93
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OCR Scan
64 mega bit ram simm KMM5016OOOAK KMM5016QOOAK
Abstract: DRAM MODULE M53613201CE0/CJ0-C 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , M53613201CE0/CJ0-C Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53613201CE0/CJ0-C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ , NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : M53613201CE0/CJ0 - K4F640411C Samsung Electronics
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M53613201CE0-C M53613201CJ0-C K4F170111C
Abstract: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM , M53631601CE0/CJ0-C EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53631601CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ , ) Tolerances :±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ Samsung Electronics
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M53631601CE0-C M53631601CJ0-C M53631601CE0/CJ0 K4E640411C K4E170111C

dram zip 256kx16

Abstract: DRAM 64kx16 Changed Point in '96 DRAM Databook (Compared with '95 databook) Changed Point in '96 DRAM databook - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB Mode product - Remove 512Kx9 and 256Kx18 product Remarks Device - 128Kx8, 64Kx16 - 4M x1, 1 Mx4 - 512Kx8. 256Kx16 Generation Change - 16Mx1, 4Mx4, 2Mx8 - 1Mx16 - 16Mx4, 8Mx8 - 4Mx16 1M in '95 - None - C-version - B-version - A-version - A-version -1st gen. - None in '96 - 1st gen. -
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OCR Scan
dram zip 256kx16 DRAM 64kx16

KMM53616000CK

Abstract: KMM53616000CKG DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM , KMM53616000CK/CKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION , KMM53616000C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a , device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : KMM53616000CK/CKG - KM44C16100CK KM41C16000CK
Samsung Electronics
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KMM53616000CK KMM53616000CKG

KMM53632004CK

Abstract: KMM53632004CKG DRAM MODULE KMM53632004CK/CKG 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , KMM53632004CK/CKG EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION , KMM53632004C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72 , ) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ
Samsung Electronics
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KMM53632004CK KMM53632004CKG KM44C16104CK KM41C16004CK
Abstract: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) · Removed two , SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53613201BE0 , of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72 , NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : M53613201BE0/BJ0 - K4F640411B Samsung Electronics
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M53613201BE0-C M53613201BJ0-C

KMM53632000CK

Abstract: KMM53632000CKG DRAM MODULE KMM53632000CK/CKG 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , KMM53632000CK/CKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION , KMM53632000C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72 , : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : KMM53632000CK/CKG - KM44C16100CK
Samsung Electronics
Original
KMM53632000CK KMM53632000CKG
Abstract: DRAM MODULE M53633201CE0/CJ0-C 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , M53633201CE0/CJ0-C EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53633201CE0/CJ0-C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ , ) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ Samsung Electronics
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M53633201CE0-C M53633201CJ0-C M53633201CE0/CJ0

41C16000

Abstract: 24-PIN SMART ® SM5091610U4PUUU Modular Technologies November 21, 1996 16MByte (16M x 9) DRAM Module - 16Mx1 based 30-pin SIMM Part Numbers Features · · · · · · · · · · Standard Configuration Access Time Operation Mode Operating Voltage Refresh Device Physicals Lead , Diagram RAS# CAS# WE# A0~A11 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM PCAS# DQ0 DQ1 DQ2 DQ3
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OCR Scan
41C16000 24-PIN 41C16100 KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR

PE 8001A

Abstract: KM41C256P PcRam Description TS16M3660G Dimensions The TS16M3660G is a 16M by 36-bit dynamic RAM module with 8 pcs of 16Mx4 and 4pcs of 16Mx1 Side Millimeters Inches DRAMs assembled on the printed circuit board. A 107.95 ± 0.200 4.250 ± 0.008 The TS16M3660G is optimized for , DQ0~DQ35 /RAS2 A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS3 A0~A11 D0 /RAS 16Mx1 DRAM /WE A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS /CAS A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS2 /CAS
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OCR Scan
KM41C256P KM41C464P PE 8001A 23C1001 23C1010 TFK 001 KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z

KM424C256Z

Abstract: KM41C464 0 A . 16Mx1-bit, 5V, FP, 4K H Y 5 1 V 1 6 1 , . 16Mx1-bit, 5V. FP. 4K H Y 5 1 V 1 6 1 0 0 B .16Mx1-bit. 5V, FP, 4K H Y5117400A / H Y 5 1 1 6 4 0 0 A . 4M x4-bit, 5V, FP, 2K
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OCR Scan
KM424C256Z KM41C464 PB20 KM64258 64k 30-pin SIMM KM23C2 KM41C255J KM41C258Z KM41C25BP KM41C258J KM41C464J KM41C464Z

KMM584000B

Abstract: KM41C464 UG216E3261GJG(T) 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin printed circuit board. · Single +5 volt power supply · Hyper- page Mode (EDO) capability · Low power dissipation · RAS only refresh cycles · CAS before RAS refresh cycles · Hidden refresh cycles · 4096 refresh cycles every 64 ms ·
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OCR Scan
KMM584000B 4Mx1 nibble KMM591000B KMM591000AN KM41C258P KM41C466P KM41C466J KM41C466Z KM41C1000CP KM41C1000CJ
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