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Part Manufacturer Description PDF & SAMPLES
QGPK116MB Switchcraft Conxall Audio/RCA Connector
KSZ8841-16MBL Microchip Technology Inc DATACOM, ETHERNET TRANSCEIVER, PBGA100
KSZ8841-16MBLI Microchip Technology Inc DATACOM, ETHERNET TRANSCEIVER, PBGA100
KSZ8842-16MBLI-TR Microchip Technology Inc DATACOM, LAN SWITCHING CIRCUIT
EL816(M)(B) Everlight Electronics Co Ltd 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, COMPACT, DIP-4
CY14B116M-BZ45XI Cypress Semiconductor Non-Volatile SRAM, 1MX16, 45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MO-216, FBGA-165

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16MB Datasheet

Part Manufacturer Description PDF Type
16MB05W International Rectifier 16A Rectifier Bridges Scan
16MB1 N/A Shortform Electronic Component Datasheets Scan
16MB100W International Rectifier V(rrm): 1000V, 16A rectifier bridge Scan
16MB10W International Rectifier 16A Rectifier Bridges Scan
16MB120W International Rectifier V(rrm): 1200V, 16A rectifier bridge Scan
16MB20W International Rectifier 16A Rectifier Bridges Scan
16MB40W International Rectifier 16A Rectifier Bridges Scan
16MB60W International Rectifier 16A Rectifier Bridges Scan
16MB80W International Rectifier 16A Rectifier Bridges Scan
16MBZ1000M10x16 Rubycon Miniature Aluminum Electrolytic Capacitor Original
16MBZ1000M8x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original
16MBZ1500M10x20 Rubycon Miniature Aluminum Electrolytic Capacitor Original
16MBZ1800M10x23 Rubycon Miniature Aluminum Electrolytic Capacitor Original
16MBZ470M8x11.5 Rubycon Miniature Aluminum Electrolytic Capacitor Original
16MBZ680M10x12.5 Rubycon Miniature Aluminum Electrolytic Capacitor Original
16MBZ680M8x16 Rubycon Miniature Aluminum Electrolytic Capacitor Original

16MB

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: need to be accounted for when migrating x16, burst multiplexed PSRAM-based designs from 16Mb to 64Mb , considerations · Hardware considerations Three PSRAM parts are discussed in this technical note: · 16Mb, x16 , multiplexed PSRAM devices: 16Mb, 32Mb, and 64Mb, each of which derives from a different CellularRAMTM , 1 Others 1 0 1 0 1 4 words 8 words 16 words 32 words Continuous Reserved 16Mb, 32Mb, 64Mb 16Mb, 32Mb, 64Mb 16Mb, 32Mb, 64Mb 64Mb only 16Mb, 32Mb, 64Mb ­ BCR[5:4] ­ Drive Micron Technology
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MT45W1MW16MBP23Z MT45W2MW16MBP24A MT45W4MW16MBP25Z PSRAM TN-45-06 31352/S
Abstract: : 82-2-760-7990 16Mb SGRAM based SODIMM ( backward compatibility with 8Mb SGRAM based SODIMM) Abstract A 16Mb SGRAM based 144pin SODIMM can keep the backward compatibility with 8Mb based. To do that, we need , explains how 16Mb SGRAM based SODIMM keeps the backward compatibility with 8Mb SGRAM based 144pin SODIMM. Pin Assignment of 100pin QFP and 144pin SODIMM Both 8Mb and 16Mb SGRAM use 100pin QFP package, but , a possibility of any kind of mixture with 8Mb and 16Mb SGRAM on a system and nobody knows which Samsung Electronics
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SGRAM Samsung 8MB SGRAM SAMSUNG Graphic Module samsung ap Samsung 16MB SGRAM so-dimm
Abstract: NOTE Address Matching in 8Mb/16Mb/32Mb SGRAM (for backward compatibility among SGRAMs) Abstract , among the various density of SGRAMs(8Mb/16Mb/32Mb) and to keep backward compatibility, because the name , foot print all, 8Mb, 16Mb and 32Mb SGRAM. All of SGRAMs use same package type, 100pin QFP(PQFP, TQFP , except adding one row address whenever the memory size is doubled. In 8Mb and 16Mb SGRAM case, the MSB , . The name of pin 51 is A8/AP on 8Mb SGRAM. If he replace the 8Mb with a 16Mb device, the same pin at Samsung Electronics
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transistor BA 13 BA 92 SAMSUNG A11/RSVD
Abstract: , LFBGA48 FLASH+SRAM, Multiple Memory Size 8Mb+1Mb 8Mb+2Mb 16Mb+1Mb 16Mb+2Mb Ref M36W108T , 0.18u 0.15u 0.13u Products 16Mb 64Mb 128Mb 256Mb 512K-1Gb Flash memory road map Design with ST , - 3V Supply, 3/1.8V Input/Output 16Mb M29W166T 16Mb (x16), 35ns, Page Mode, CFI, SRW, Dual Bank Dual Supply - 3V Supply, 3/1.8V Input/Output, 12V Program/Erase option 16Mb M28W016T 16Mb (x8), 100 - 150ns, Low Latency, CFI, Top Boot M28W016B 16Mb (x8), 100 - 150ns, Low Latency, CFI, Bottom Boot STMicroelectronics
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EEPROM 16MB house map M29W160T M29F800B AM29F100 M29W200 E-28027 S-16421 SL71Y SF-08150 FLSTD/1198 286-CJ103
Abstract: -701WT PDF: 09005aef81cb58ed/Source: 09005aef81c7a667 16mb_burst_cr1_0_p23z_1.fm - Rev. E 6/ 06 EN 1 , . . . . . . . .57 PDF: 09005aef81cb58ed/Source: 09005aef81c7a667 16mb_burst_cr1_0_p23zTOC.fm - , PDF: 09005aef81cb58ed/Source: 09005aef81c7a667 16mb_burst_cr1_0_p23zLOF.fm - Rev. E 6/ 06 EN 3 , /Source: 09005aef81c7a667 16mb_burst_cr1_0_p23zLOT.fm - Rev. E 6/ 06 EN 4 Micron Technology, Inc , : 09005aef81c7a667 16mb_burst_cr1_0_p23z_2.fm - Rev. E 6/ 06 EN 5 Micron Technology, Inc., reserves the right Micron Technology
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MT45W1MW16BDGB
Abstract: 16Mb: x16 SDRAM SYNCHRONOUS DRAM MT48LC1M16A1 S - 512K x 16 x 2 banks For the latest data , banks 2K or 4K 2K (A0-A10) 2 (BA) 256 (A0-A7) 16MB (X16) SDRAM PART NUMBER S PART NUMBER , 3* 5.5ns 5.5ns 6ns SETUP HOLD 2ns 2ns 2ns The 16Mb SDRAM is a high-speed CMOS , 16Mb: x16 SDRAM 16MSDRAMx16.p65 ­ Rev. 8/99 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©1999, Micron Technology, Inc. 16Mb: x16 SDRAM Micron Technology
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16Mb SDRAM MT48LC1M16A1S MT48LC1M16A1TG-7S PC100 1M16A1 16MSDRAM 50-PIN
Abstract: .3 V S O D IM M s CO CO 16MB 16MB 32MB 32MB 16MB 32MB 32MB lM x 64 2 M x 64 2 M x 64 4M X 64 , , 3 .3 V S O D IM M s 16MB 32MB 32MB 2M x 72 4M X 72 4M X 72 2M x 8 2M x 8 4M x 4 ECC ECC ECC , s 8MB 16MB 16MB 32MB 32MB 64MB 16MB 32MB 32MB 64MB 128MB 128MB 8MB 16MB 16MB 32MB 32MB 64MB 64MB , , BUFFERED, PARALLEL PRESENCE DETECT, 3 .3 V D IM M s 8MB 16MB 16MB 32MB 32MB 64MB 16MB 32MB 32MB 64MB 64MB 128MB 128MB 8MB 16MB 16MB 32MB 32MB 64MB 64MB 128MB 128MB IM x 64 2 M x 64 2M x64 4M X 64 4M X 64 8M X -
OCR Scan
sm5801 16mb simm module 64mb edo dram simm dram "32mb x 32" simm dram 72-pin simm 128mb SMRTD005 564013174NWUU SM564023174NWUU SM564028074NWUU SM564048074NWUU SM564044074NWUU
Abstract: 16MB (x32, SR); 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U ­ 16MB MT4LSDT832UD ­ 32MB MT4LSDT1632UD ­ 64MB MT4LSDT3232UD ­ 128MB For the latest data , · 16MB (4 Meg x 32) , 32MB (8 Meg x 32), 64MB (16 Meg x 32), and 128MB (32 Meg x 32) · Utilizes , , 4, 8, or full page · Auto Precharge and Auto Refresh Modes 16MB, 32MB, and 64MB modules; 64ms, 4 , _4C4_8_16_32x32UDG.fm - Rev. A 12/04 EN 16MB 32MB 64MB 128MB 4K 4K 4K 8K 4 (BA0­BA1) 4 Micron Technology
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3CK10 MT48LC8M16A2P 100-P PC133- 32UDG
Abstract: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT® SRAM FEATURES · High , . Micron's 16Mb ZBT SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced , . Part Number Example: MT55L512Y32PT-7.5 16Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM MT55L1M18P , without notice. ©2000, Micron Technology, Inc. ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT , x36 versions. Micron's 16Mb ZBT SRAMs operate from a +3.3V or +2.5V VDD power supply, and all 3.3V VDD Micron Technology
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MT55L1MY18P MT55V1MV18P MT55L512Y32P MT55V512V32P MT55L512Y36P MT55V512V36P
Abstract: / Access Time IBM0116405PT1D-60 EDO DRAM 16Mb 4M x 4 IBM0116405PT1D-70 EDO DRAM 16Mb , x 4 70ns 33 75 3.3V NOW N/A 16Mb 16Mb 16Mb 16Mb 16Mb 16Mb 16Mb 4M x 4 , NOW NOW NOW NOW NOW NOW NOW N/A N/A N/A N/A N/A N/A N/A EDO DRAM 16Mb 2M x 8 , -60 IBM117805BT3D-70 IBM116165PT3D-60 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM 16Mb 16Mb 16Mb 16Mb 16Mb 2M x 8 2M x 8 2M x 8 2M x 8 1M x 16 60ns 70ns 60ns 70ns 60ns 40 33 40 33 40 -
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MB81141622 TC59R1809 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 GM72V1682 MB81141621 MB81G8322 MB81116421 16MEG MB81116422
Abstract: M IC n O IN J I " r f . .T MT8D88C132H/432H(S), MT16D88C232H/832H(S) 4MB. 8MB. 16MB. 32MB DRAM , PRELIMINARY MICRON 1 MT8D88C132H/432H(S), MT16D88C232H/832H(S) 4MB, 8MB, 16MB, 32MB DRAM , J MT8D88C132H/432H(S), MT16D88C232H/832H(S) 4MB, 8MB, 16MB, 32MB DRAM CARDS separate bytes, m , , 16MB - MT8D88C432H) RASO o > JJ o N O TE: 1. B1 through B4 = x8 memory blocks , lt^ S Q N I MT8D88C132H/432H(S), MT16D88C232H/832H(S) 4MB, 8MB, 16MB, 32MB DRAM CARDS -
OCR Scan
832HS MT8D88C432H-6
Abstract: 16Mb: x16 IT SDRAM SYNCHRONOUS DRAM MT48LC1M16A1 SIT - 512K x 16 x 2 banks INDUSTRIAL , mil) -6 -7 -8A · Refresh 2K or 4K with Self Refresh Mode at 64ms 16MB (X16) SDRAM PART , *Off-center parting line *CL = CAS (READ) latency 16Mb: x16 IT SDRAM 16MSDRAMx16IT.p65 ­ Rev. 5/99 1 , , Micron Technology, Inc. 16Mb: x16 IT SDRAM GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS , option. An AUTO PRECHARGE function may be enabled to provide a self-timed row 16Mb: x16 IT SDRAM Micron Technology
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Abstract: 16Mb: x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC100 functionality · Fully synchronous; all , Addressing Column Addressing · Refresh 2K or 4K with Self Refresh Mode at 64ms 16Mb (x16) SDRAM PART , 6ns SETUP 2ns 2ns 2ns HOLD 1ns 1ns 1ns GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS , programmed number of locations in a programmed *Off-center parting line *CL = CAS (READ) latency 16Mb , of Micron Technology, Inc. 16Mb: x16 SDRAM GENERAL DESCRIPTION (continued) sequence. Accesses Micron Technology
Original
Abstract: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURSTTM SRAM , are fabricated using an advanced CMOS process. Micron's 16Mb SyncBurst SRAMs integrate a 1 Meg x 18 , package marking guide. Part Number Example: MT58L512Y36FT-10 16Mb: 1 Meg x 18, 512K x 32/36 , 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM FUNCTIONAL BLOCK DIAGRAM 1 MEG x 18 20 SA0 , descriptions and timing diagrams for detailed information. 16Mb: 1 Meg x 18, 512K x 32/36 Flow-Through Micron Technology
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MT58L1MY18F MT58V1MV18F MT58L512Y32F MT58V512V32F MT58L512Y36F MT58V512V36F
Abstract: 16Mb: x16 IT SDRAM MT48LC1M16A1 SIT - 512K x 16 x 2 banks INDUSTRIAL TEMPERATURE SYNCHRONOUS , SETUP HOLD 2ns 2ns 2ns The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory , 16Mb: x16 IT SDRAM 16MSDRAMx16IT.p65 ­ Rev. 5/99 2 (BA) 256 (A0-A7) GENERAL DESCRIPTION KEY TIMING PARAMETERS CLOCK 1 Meg x 16 512K x 16 x 2 banks 2K or 4K 2K (A0-A10) 16Mb (x16) SDRAM , , Inc. 16Mb: x16 IT SDRAM GENERAL DESCRIPTION (continued) sequence. Accesses begin with the Micron Technology
Original
Abstract: 16Mb: x16 SDRAM MT48LC1M16A1 S - 512K x 16 x 2 banks SYNCHRONOUS DRAM For the latest , ) ARCHITECTURE 1 Meg x 16 GENERAL DESCRIPTION SETUP 2ns 2ns 2ns The 16Mb SDRAM is a high-speed CMOS , parting line *CL = CAS (READ) latency 16Mb: x16 SDRAM 16MSDRAMx16.p65 ­ Rev. 8/99 1 Meg x 16 512K x 16 x 2 banks 2K or 4K 2K (A0-A10) 16Mb (x16) SDRAM PART NUMBER S · Part Number , Technology, Inc. Micron is a registered trademark of Micron Technology, Inc. 16Mb: x16 SDRAM GENERAL Micron Technology
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MT48LC1M16A1TG
Abstract: 16Mb Pseudo SRAM IS66WV1M16DBLL ISSI is now sampling a 16Mb Pseudo SRAM, the latest addition to our SRAM portfolio. 16Mb Pseudo SRAM provides a cost effective solution to a standard SRAM socket. The pinout of the 16Mb PSRAM is identical to the regular 16Mb LP SRAM, providing a drop in replacement , Standby Current (Typical)* Operating Current (-40 C to +85 C) o o Standard SRAM 16Mb (1Mx16) SRAM 25mA 30mA 48-ball BGA 55ns, 70ns 16Mb (1Mx16) DRAM 130mA 28mA 48-ball BGA 55ns, 70ns Packaging Speed Integrated Silicon Solution
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PSEUDO SRAM HIO15 SRAM I/O14 I/O15 I/O10 I/O11 I/O12 I/O13
Abstract: 16Mb Figure 1 ZBT SRAM PINOUT SYNCBURSTTM The SyncBurstTM family of devices currently consists of memory densities from 1Mb to 8Mb, with a memory upgrade path defined through 16Mb. The 1Mb and 2Mb devices are available in a TQFP package, and the 4Mb, 8Mb, and 16Mb devices are available in , currently available in a 100pin TQFP package. A density upgrade path has been defined from 2Mb to 16Mb , could use the 2Mb pinout as shown in Figure 1. The 4Mb, 8Mb and 16Mb ZBT SRAMs have identical pinouts Micron Technology
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MS026 MICRON 63 8887 BGA 48 "8 x 8" memory micron micron sram TN-05-26 MS026-BHA
Abstract: VIS Description VG3616801DT VG3616161DT 16Mb CMOS Synchronous Dynamic RAM The VG3616801DT , DQ0 VG3616801DT VG3616161DT 16Mb CMOS Synchronous Dynamic RAM 44-Pin Plastic TSOP(II)(400 mil , VG3616161DT 16Mb CMOS Synchronous Dynamic RAM 50-Pin Plastic TSOP(II)(400 mil) VDD DQ0 DQ1 1 2 3 4 5 6 , DQ Document:1G5-0148 Rev.1 Page 3 VIS VG3616801DT VG3616161DT 16Mb CMOS Synchronous , .1 Page 4 VIS Absolute Maximum Ratings VG3616801DT VG3616161DT 16Mb CMOS Synchronous Dynamic RAM Vanguard International Semiconductor
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143MH 125MH
Abstract: . PDF: 09005aef81cb58ed/Source: 09005aef81c7a667 16mb_burst_cr1_0_p23z_1.fm - Rev. B 12/ 05 EN , : 09005aef81cb58ed/Source: 09005aef81c7a667 16mb_burst_cr1_0_p23zTOC.fm - Rev. B 12/ 05 EN 2 Micron Technology , PDF: 09005aef81cb58ed/Source: 09005aef81c7a667 16mb_burst_cr1_0_p23zLOF.fm - Rev. B 12/ 05 EN 3 , : 09005aef81c7a667 16mb_burst_cr1_0_p23zLOT.fm - Rev. B 12/ 05 EN 4 Micron Technology, Inc., reserves the right , : 09005aef81c7a667 16mb_burst_cr1_0_p23z_2.fm - Rev. C 12/ 05 EN 5 Micron Technology, Inc., reserves the right Micron Technology
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Abstract: 16Mb: 1 Meg x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAMTM 1.0 Memory , : 09005aef81cadc83/Source:09005aef81c6edb4 16mb_asyncpage_cr1_0_p23z_1.fm - Rev. E 2/08 EN 1 Micron Technology , Micron without notice. 16Mb: 1 Meg x 16 Async/Page CellularRAM 1.0 Memory Table of Contents Table of , . . . . . . . . . . . .29 PDF: 09005aef81cadc83/Source:09005aef81c6edb4 16mb , specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. 16Mb: 1 Meg x 16 Async/Page Micron Technology
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MT45W1MW16PDGA MT45W1MW16PD MT45W1MW16PDGA-70WT
Abstract: 16Mb: x16 IT SDRAM Q X /M f^ L I IQ O T IM O rH lV ^ IM v ^ U O MT48LC1M16A1 S I T - 5 1 2 K , -40°C to +85°C 512Kx16x2banks 2K or 4K 2K (A3-A10) 2 (BA) 256 (A0-A7) 16Mb (x16) SDRAM PART , SETUP The 16Mb SDRAM is a high-speed CM O S, dynamic random -access m em ory containing 16,777,216 , icron T ech no log y, Inc. 16Mb: x16 IT SDRAM GENERAL DESCRIPTION (continued) sequence. A , du cts o r s pe cificatio ns w ith o u t notice. © 1 9 9 9 , M icro n T ech no log y, Inc. 16Mb -
OCR Scan
Abstract: VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801CT is CMOS , 16Mb CMOS Synchronous Dynamic RAM Pin Configuration 44-Pin Plastic TSOP(II)(400 mil) 1 44 , :1G5-0133 CS Rev.1 Chip select Page 2 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM , Amplifier Page 3 DQ VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Absolute Maximum , 4 VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM DC Characteristics(Recommended Vanguard International Semiconductor
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dba1 VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L 100MH
Abstract: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURSTTM SRAM , process. Micron's 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with , global write (GW#). MT58L1MY18PT-6 16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, SCD SyncBurst SRAM , specifications without notice. ©2000, Micron Technology, Inc. ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 , detailed information. 16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, SCD SyncBurst SRAM MT58L1MY18P_2.p65 ­ Rev Micron Technology
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MT58V1MV18P MT58L512Y32P MT58V512V32P MT58L512Y36P MT58V512V36P 165-P
Abstract: VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Description The , Rev.1 Page 1 VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Pin , Page 2 VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Block Diagram , Page 3 DQ VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Absolute , V Document:1G5-0160 Rev.1 Page 4 Note VIS Preliminary VG3617161DT 16Mb CMOS Vanguard International Semiconductor
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180MH 166MH
Abstract: VIS Description VG3617801AT VG3617161AT 16Mb CMOS Synchronous Dynamic RAM The VG3617801AT , VG3617801AT VG3617161AT 16Mb CMOS Synchronous Dynamic RAM 44-Pin Plastic TSOP(II)(400 mil) 1 2 3 4 5 6 7 8 , Document:1G5-0096 Rev.2 Page 2 VIS Pin Configuration(x16) VG3617801AT VG3617161AT 16Mb CMOS , Rev.2 Page 3 VIS VG3617801AT VG3617161AT 16Mb CMOS Synchronous Dynamic RAM Block Diagram , Maximum Ratings VG3617801AT VG3617161AT 16Mb CMOS Synchronous Dynamic RAM Parameter Voltage on any Vanguard International Semiconductor
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VG361761 VG3617801AT-10 VG361761AT
Abstract: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT® SRAM FEATURES · · · , . Micron's 16Mb ZBT SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced , . Part Number Example: MT55L512Y32FT-11 16Mb: 1 Meg x 18, 512K x 32/36 Flow-Through ZBT SRAM , specifications without notice. ©2000, Micron Technology, Inc. ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 , , pin descriptions, and timing diagrams for detailed information. 16Mb: 1 Meg x 18, 512K x 32/36 Micron Technology
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for 3g 4e MT55L1MY18F MT55V1MV18F MT55L512Y32F MT55V512V32F MT55V512Y36F MT55V512V36F
Abstract: 168-pin Enhanced SDRAM DIMM 8MB, 16MB, 32MB DIMM Preliminary Data Sheet Pin Assignments , compatible with JEDEC standard 168-pin SDRAM DIMMs. The 8MB and 16MB DIMMs employ a single physical bank of , change without notice. Page 1 of 13 168-pin Enhanced SDRAM DIMM 8MB, 16MB, 32MB DIMM , DIMM 8MB, 16MB, 32MB DIMM Preliminary Data Sheet 1Mx64 (8MB) DIMM Functional Block Diagram ­ , of 13 168-pin Enhanced SDRAM DIMM 8MB, 16MB, 32MB DIMM Preliminary Data Sheet 2Mx64 (16MB Enhanced Memory Systems
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PC-100 PC133-222-45120 8MB SDRAM 168-pin sdram dimm x64 DIMM-PC 133MH 545-DRAM SM1M64DT-7 SM1M64DT-10 SM2M64DT-7
Abstract: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURSTTM SRAM , using an advanced CMOS process. Micron's 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K , enables (BWx#) and global write (GW#). MT58L1MY18PT-6 16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, SCD , products or specifications without notice. ©2000, Micron Technology, Inc. ADVANCE 16Mb: 1 MEG x 18 , diagrams for detailed information. 16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, SCD SyncBurst SRAM Micron Technology
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