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ATXMEGA16E5-AUR Atmel Corporation RISC Microcontroller, 16-Bit, FLASH, AVR RISC CPU, 32MHz, CMOS, PQFP32, 7 X 7 MM, 1 MM HEIGHT, 0.80 MM PITCH, GREEN, PLASTIC, MS-026ABA, TQFP-32 visit Digikey Buy
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ATXMEGA16E5-AN Atmel Corporation RISC Microcontroller, 16-Bit, FLASH, 32MHz, CMOS, PQFP32, 7 X 7 MM, 1 MM HEIGHT, 0.80 MM PITCH, GREEN, PLASTIC, MS-026ABA, TQFP-32 visit Digikey Buy

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16E-5

Catalog Datasheet MFG & Type PDF Document Tags

4LCIM16E5-50

Abstract: 4LCIM16E5 AS4C1M 16E5-50JC AS4LC1M16ES ordering information Package \ RAS access time TSO PII, 4 0 0 m il, 4 4 /5 0 - p i n 3V 50 ns 6 0 ns AS+LC1M 16E5-50TC AS4LC1M 16E5 -60TC A S4C 1M 16E 5 part , A S4C 1M 16E5 A S4L C 1M 16E S Preliminary information Functional description The AS4CIM16E5 , Afflane« Setrocoodactor. All ngiKs reserved. Preliminary information A S4C 1M 16E5 A S4LC 1M 16E5 , ©1998 Alliance Semiconductor All rights reserved. A S4C 1M 16E5 A S 4 L C 1M 16E 5 A -50 -60 M
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OCR Scan
4LC1M16E5 4C1M16E5-60 4LCIM16E5-50 4LCIM16E5 j130007a j13000 4C1M16E5 4LC1M16E5-60 AS4C1M16E5 AS4LC1M16E5

4lc1m16e5-6

Abstract: tim e â'¢ L o w p o w e r c o n s u m p tio n - Active: 880 m W m ax (4C1M 16E5-60) -A ctiv e , ) â'¢ 5V p o w e r su p p ly (A S4C 1M 16E 5) â  3V p o w e r su p p ly (A S4LC1M 16E5) Pin , . Preliminary information A S4C 1M 16E5 A S 4L C 1M 16E 5 A R ecom m ended operating conditio n s , rights reserved. A S4C 1M 16E5 A S4L C 1M 16E5 Preliminary information II Hyper page mode , Semiconductor. All rights reserved. Preliminary information A S4C 1M 16E5 A S 4L C 1M 16E 5 A Notes
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OCR Scan
4lc1m16e5-6 TD0344T D0015 H-30007-A AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC

varistor 270k

Abstract: ap 474 w hi Termination 250 8E4 8E4 8E4 8E4 8E4 10E4 10E4 12E5 12E5 16E5 16E5 16E7 · Standard , Metal barrier BE4 BE4 8E4 10E4 10E4 10E4 12E5 12E5 16E5 16E7 16E7 8E4 8E4 10E4 10E4 10E4 12E5 12E5 16E5 16E5 16E7 T Case code 8E4 10E4 12E5 16ES 16E7 Size (mm) L 8.0 10.0 12.5 16.0 16.0 W 6.3 8.0
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OCR Scan
varistor 270k ap 474 270S700
Abstract: Min 4 T00344S D OD Gb ' i S b7S 1 Notes A S4C 1M 16E5 Preliminary information , ? 445 Notes 8 8 8,10 A S4C 1M 16E5 Preliminary information Notes * ^CCl * I , Lower I/O ^â¡â¡344=1 D O O D L E 516 Preliminary information A S4C 1M 16E5 A. Lower , ôb T A S4C 1M 16E5 Preliminary information A Upper byte early write waveform KA5 , 10 T O O B M M T D D D G 7 à 1 7Tb A S4C 1M 16E5 Preliminary information W rite waveform -
OCR Scan
16E0-60 1M16E0

C5190

Abstract: 16E5DJ-6 KEY TIMING P A R A M E T E R S SPEED -5 -6 -7 'RC 90ns 105ns 125ns 'RAC 50 ns 60 ns 70ns 'PC , : GENERAL DESCRIPTION The M T4C1M 16E5(S) is a random ly accessed solid-state m emory containing 16,777,216 bits organized in a x l6 con figuration. TheM T4C lM 16E5(S) has both BYTE WRITE and W ORD W RITE , # of other DRAM s in that either C A SL# or C A SH # will generate an internal CAS#. The M T4C1M 16E5(S , . M T4C 1M 16E5(S) D 4 6 p m 5 - R e v 10/96 -I I CA SL# transitioning LOW selects an access cycle
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OCR Scan
C5190 44/50-P 44/50-PIN
Abstract: snap -lo ck pin PCB m o u n tin g d im e nsion s (C onnector m ount side) PCB thickness: 1.6"E5 -
OCR Scan
UL94V-0 500MQ DHB-PA50-R131N10
Abstract: Advance information â â  AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1 DRAM (EDO) '' Features â'¢ Organization: 1,048,576 words x 16 bits â'¢ High speed â'¢ 1 0 2 4 refresh , ? Copyright © 1998 A llia n ce Semiconductor. A ll rights reserved. AS4SC1M 16E5 Advance information , : AS4SC1M 16E5 Advance information I Write cycle -100 Symbol Parameter Min Mas twcs , / 9 9 ALLIANCE SEMICONDUCTOR 325 Advance information AS4SC1M 16E5 1 Hidden refresh -
OCR Scan
AS4SC1M16E5-100JC AS4SC1M16E5-100TC 1M16E5

M16E5

Abstract: 16E5TG-7 S KEY TIMING PARAMETERS SPEED -6 -7 >RC 110ns 130ns 'RAC 60ns 70ns 'PC 25ns 30ns 'AA 30ns 35ns 'CAC 15ns 20ns 'CAS 10ns 12ns GENERAL DESCRIPTION TheM T4LC lM 16E5(S) is a randomly accessed , . The M T4LC1M 16E5(S) CAS function and timing are determined by the first CAS (CASL or CASH) to , . Returning RAS HIGH terminates the PAGE MODE of operation. EDO PAGE MODE The M T4LC1M 16E5(S) provides , REFRESH m ode is also available on the MT4LC1M 16E5 S. The "S " version allows the user the choice of a
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OCR Scan
M16E5 MT4LC1M16E5

marking m062

Abstract: FDB2552-F085 =1.5e-6) .MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6) .MODEL RvthresMOD RES (TC1=-4.3e-3 TC2=-1.6e-5) .MODEL , = 4.6e-3, tc1=4.0e-3,tc2=1.0e-6 res.rvthres n22 n8 = 1, tc1=-4.3e-3,tc2=-1.6e-5 res.rvtemp n18 n19 =
Fairchild Semiconductor
Original
marking m062 FDB2552-F085 FDB2552

75344G

Abstract: 75344P -1.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL , res.rvtemp n18 n19 = 1, tc1 = -2.4e-3, tc2 = 7e-7 res.rvthres n22 n8 = 1, tc1 = -3.7e-3, tc2 = -1.6e-5
Fairchild Semiconductor
Original
HUFA75344G3 HUFA75344P3 HUFA75344S3S TB334 75344G 75344P 75344 HUFA75344 TA75344

tc144e

Abstract: FDS2582 =-3.9e-3 TC2=-1.6e-5) .MODEL RvtempMOD RES (TC1=-3.5e-3 TC2=1.5e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF , =-3.9e-3,tc2=-1.6e-5 res.rvtemp n18 n19 = 1, tc1=-3.5e-3,tc2=1.5e-6 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
Fairchild Semiconductor
Original
FDS2582 tc144e 82855

75344G

Abstract: fairchild to-220ab 75344P -3.7e-3 TC2 = -1.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 , res.rvtemp n18 n19 = 1, tc1 = -2.4e-3, tc2 = 7e-7 res.rvthres n22 n8 = 1, tc1 = -3.7e-3, tc2 = -1.6e-5
Fairchild Semiconductor
Original
HUFA75344S3 fairchild to-220ab 75344P HUFA75344S3ST MOSFET VDS 20V TO-220 75344S

fairchild to-220ab 75344P

Abstract: 75344G RVTHRESMOD RES (TC1 = -3.7e-3 TC2 = -1.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7) .MODEL S1AMOD , -3.7e-3, tc2 = -1.6e-5 MWEAK MMED CIN 71 11 16 6 RLGATE RDBODY DBREAK 50
Fairchild Semiconductor
Original
HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST 75344P FAIRCHILD

25E5 tube

Abstract: FDB2552 =1.0e-6) .MODEL RvthresMOD RES (TC1=-4.3e-3 TC2=-1.6e-5) .MODEL RvtempMOD RES (TC1=-4.1e-3 TC2=1.5e-6) .MODEL , n7 = 4.6e-3, tc1=4.0e-3,tc2=1.0e-6 res.rvthres n22 n8 = 1, tc1=-4.3e-3,tc2=-1.6e-5 res.rvtemp n18
Fairchild Semiconductor
Original
FDP2552 25E5 tube TC2-25
Abstract: RES (TC1 = 2.05e-2 TC2 = 1.6e-5) .MODEL RSLCMOD RES (TC1 = 6.0e-3 TC2 = -2.8e-6) .MODEL RSOURCEMOD , 1.0e-7 res.rdrain n50 n16 = 1.95e-3, tc1 = 2.05e-2, tc2 = 1.6e-5 res.rgate n9 n20 = 0.34 res.rldrain Fairchild Semiconductor
Original
HUF75339G3 HUF75339P3 HUF75339S3S TA75339 75339P 75339G

75339P

Abstract: TA75339 RBREAKMOD RES (TC1 = 1.08e-3 TC2 = -2.5e-7) .MODEL RDRAINMOD RES (TC1 = 2.05e-2 TC2 = 1.6e-5) .MODEL , 1.0e-7 res.rdrain n50 n16 = 1.95e-3, tc1 = 2.05e-2, tc2 = 1.6e-5 res.rgate n9 n20 = 0.34 res.rldrain
Intersil
Original
HUF75339S3ST 75339S HUF75339 ISO9000

75344g

Abstract: 75344P -1.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL , , tc2 = 7e-7 res.rvthres n22 n8 = 1, tc1 = -3.7e-3, tc2 = -1.6e-5 MWEAK MMED CIN l.ldrain n2
Intersil
Original
HUF75344

75344G

Abstract: 75344p ) .MODEL RVTHRESMOD RES (TC1 = -3.7e-3 TC2 = -1.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7 , n22 n8 = 1, tc1 = -3.7e-3, tc2 = -1.6e-5 MWEAK MMED CIN 71 11 16 6 RLGATE
Fairchild Semiconductor
Original
Abstract: - 3TC2 = -2.5e-7) .MODEL RDRAINMOD RES (TC1 = 2.05e-2 TC2 = 1.6e-5) .MODEL RSLCMOD RES (TC1 = 6.0e-3 , 1.0e-7 res.rdrain n50 n16 = 1.95e-3, tc1 = 2.05e-2, tc2 = 1.6e-5 res.rgate n9 n20 = 0.34 res.rldrain Fairchild Semiconductor
Original

75344G

Abstract: 75344p 2.11e-6) .MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -3.7e-3 TC2 = -1.6e-5 , , tc2 = 7e-7 res.rvthres n22 n8 = 1, tc1 = -3.7e-3, tc2 = -1.6e-5 MWEAK MMED CIN 71 11
Fairchild Semiconductor
Original

21341

Abstract: 9610E 'CAC 15ns 20ns 'CAS 10ns 12ns GENERAL DESCRIPTION TheM T4LC lM 16E5(S) is a randomly accessed , . The M T4LC1M 16E5(S) CAS function and timing are determined by the first CAS (CASL or CASH) to , . Returning RAS HIGH terminates the PAGE MODE of operation. EDO PAGE MODE The M T4LC1M 16E5(S) provides , REFRESH m ode is also available on the MT4LC1M 16E5 S. The "S " version allows the user the choice of a , /95 1-127 Micron Technology, Inc., reserves if PRELIMINARY [U IIC R O N MT4LC1 M 16E5
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Original
21341 9610E 21.340.5453.0 VB16 21.330.5653.0 21.330.5553.0

29.401.0653

Abstract: KL-16 Advance information â â  AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1 DRAM (EDO) '' Features â'¢ Organization: 1,048,576 words x 16 bits â'¢ High speed â'¢ 1 0 2 4 refresh , ? Copyright © 1998 A llia n ce Semiconductor. A ll rights reserved. AS4SC1M 16E5 Advance information , : AS4SC1M 16E5 Advance information I Write cycle -100 Symbol Parameter Min Mas twcs , / 9 9 ALLIANCE SEMICONDUCTOR 325 Advance information AS4SC1M 16E5 1 Hidden refresh
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OCR Scan
29.401.0653 KL-16 s8797
Abstract: =1.5e-6) .MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6) .MODEL RvthresMOD RES (TC1=-4.3e-3 TC2=-1.6e-5) .MODEL , = 4.6e-3, tc1=4.0e-3,tc2=1.0e-6 res.rvthres n22 n8 = 1, tc1=-4.3e-3,tc2=-1.6e-5 res.rvtemp n18 n19 = -
OCR Scan
6E5-60 AS4VC1M16E5 16E5-45JC 16E5-45TC AS4C1M16E5-50JC AS4C1M16E5-50TC

BAR10

Abstract: 0747013800 -1.6e-5) .MODEL RVTEMPMOD RES (TC1 = -2.4e-3 TC2 = 7e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL , res.rvtemp n18 n19 = 1, tc1 = -2.4e-3, tc2 = 7e-7 res.rvthres n22 n8 = 1, tc1 = -3.7e-3, tc2 = -1.6e-5
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Original
BAR10 0747013800 EN60335-1/DIN

21.312.0753.0

Abstract: 21.305.0853.0 * .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3E-8 + RS = 43E-4 RD = 0 NSUB = 4.9E17 + KP = 1.6E-5 UO = 650 , NSUB = 4.9E17 + KP = 1.6E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 1E-3 + ETA = 1E-4 TPG = 1 +
Wieland Electric
Original
21.312.0753.0 21.305.0853.0 ds 300 M25 E-4
Abstract: RBREAKMOD RES (TC1 = 1.08e- 3TC2 = -2.5e-7) .MODEL RDRAINMOD RES (TC1 = 2.05e-2 TC2 = 1.6e-5) .MODEL RSLCMOD , = 1.95e-3, tc1 = 2.05e-2, tc2 = 1.6e-5 res.rgate n9 n20 = 0.34 res.rldrain n2 n5 = 10 res.rlgate n1 -
OCR Scan
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