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165mW

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Abstract: ): 3Amp Power Dissipation: 165mw Derate: 1.65mw/°C Operating Junction Temp. 125°C CLED155 CLED155 ANODE ... OCR Scan
datasheet

3 pages,
55.01 Kb

T046 CLED155F CLED155 155C 155B 2t6 551 21427T 21427T abstract
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Abstract: LMH0302 LMH0302 3.3V SD 125mW HD 165mW LMH0302 LMH0302 16 LLP : - 40 85 2.97Gbps 75 3.3V (): SD 125mW HD 165mW 16 LLP LMH0002SQ LMH0002SQ Gennum GS2978 GS2978 ... Original
datasheet

6 pages,
190.61 Kb

SD302 LMH0302SQ LMH0002SQ 424M LMH0302 GS2978 SMPTE 424M Gennum GS2978 LMH0302 abstract
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Abstract: S4E39850 S4E39850 CF-Type GPS Card OEM Ultra Low-Power consumption (165mW) Compact and Thin design Built-in GPS antenna OVERVIEW GPS (Global Positioning System) having been used Car Navigation Systems, is now going to be used in mobile equipments as well. S4E39850 S4E39850 is a compact and highly accurate GPS card capable of receiving signals from GPS satellite and taking information such as the current position , 165mW at 3.3V operation -10+55 -20+65 NMEA (standard) or EPSON format 9600bps Built-in antenna x1 ... Original
datasheet

2 pages,
17.35 Kb

WGS84 S4E39850 S4E39850 abstract
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Abstract: CURRENT REVERSE DC VOLTAGE POWER DISSIPATION 100mA 5 Volts 165mW (ii) OUTPUT TRANSISTOR COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT POWER DISSIPATION 35 Volts 15 mA 165mW (iii) OPERATING TEMP ... Original
datasheet

2 pages,
31.79 Kb

OPTO ISOLATOR opto coupler OPI30000MC OPI110 infrared emitter ATEX 064 30KV OPI3000P OPI2000MK 3000P 30000P 3000P abstract
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Abstract: ): 3Amp Power Dissipation: 165mw Derate: 1.65mw/°C Operating Junction Temp. 125°C CLED155 CLED155 electrical ... OCR Scan
datasheet

2 pages,
59.81 Kb

T046 CLED155F CLED155 155C 155B datasheet abstract
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Abstract: News Release www.linear.com 1.5Msps, 14-Bit ADC Simultaneously Samples 6 Differential Inputs MILPITAS, CA ­ February 20, 2007 ­ Linear Technology Corporation introduces the LTC2351-14 LTC2351-14, a 1.5Msps low-power analog-to-digital converter (ADC) with six simultaneous sampling differential inputs. Operating from a single 3.3V supply, power dissipation is typically 16.5mW. The LTC2351-14 LTC2351-14 features six , Inputs · 250ksps Throughput Per Channel · Low Power Dissipation: - Active Mode (16.5mW) - Nap ... Original
datasheet

2 pages,
143.05 Kb

LTC2351-14 LTC2351-12 LTC2351-14 abstract
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Abstract: IMS1420L IMS1400-45 standby power 165mW IMS 1421 • High Speed Chip Select function • 30nsec and 40nsec Chip Select access , active power 165mW Maximum standby power Single 5V ± 10% supply E Power down function TTL compatible ... OCR Scan
datasheet

1 pages,
82.6 Kb

16Kx1 1420L A12C 1420P-55 Mil-Std-883B 40-nsec 1421W 1400S-55 1420P 1400L 1400L abstract
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Abstract: opi1000lc noted) INPUT DIODE FORWARD DC CURRENT REVERSE DC VOLTAGE POWER DISSIPATION 100mA 5 Volts 165mW , 15 mA 165mW (iii) OPERATING TEMP -25OC -25OC TO +100OC 100OC STORAGE TEMP -25OC -25OC TO +100OC 100OC ... Original
datasheet

4 pages,
164.98 Kb

opi 1000 1000L OPI1000LE 1000L abstract
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Abstract: V ,-5 .2 V 20, -95mA max mm m t ) æ » a - K 200nWC typ) BIN TTL 165mW BIN TTL l.O V p -p , ·i'é'B W ÍJ : 165mW(,> ·1 6 t° > S 0 P · r"-f CND GND ... OCR Scan
datasheet

3 pages,
57.24 Kb

TL5501 TDC1046B8C MN65531S datasheet abstract
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Abstract: KM6164000AL/AL-L KM6164000AL/AL-L ADVANCED CMOS SRAM 256Kx16 Bit CMOS Static RAM FEATURES • Fast Access Time : 55, 70, 85ns(Max.) • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,MW(Typ.) LL-Version Operating : 165mW(max.) • Single 5±10%V power supply • TTL Compatible inputs and outputs • Fully Static Operation - No clock or refresh required • Three State Output • Data Byte Control : LB : I/O-i-I/Ob : UB : I/09-I/016 I/09-I/016 • Low Data Retention Voltage: 2V(Min) • Standard Pin Configuration ... OCR Scan
datasheet

1 pages,
36.95 Kb

SRAM_256KX16 6164000AL/AL-L 6164000AL/AL-L abstract
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Abstract: S ONY CORP/COMPONENT PRODS TD DeJ 0355303 Q 0 D Q 4 ci 7 5 | 512K-bit Mask Programmable ROM Description The CXK38512 CXK38512 is a CMOS silicon gate mask programmable read-only memory organized as 6 5 ,5 3 6 words by 8 bits. The chip enable input deselects the outputs and puts the chip in a pow er dow n mode. The active level of the output enable is defined by the customer. Features · Access time: 2 0 0 ns Max. · A utom atic pow er down. · Fully static operation . . . No clo ... OCR Scan
datasheet

1 pages,
83.37 Kb

datasheet abstract
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Abstract: SONY CORP/COMPONENT PRODS TO Ï>ËJ Û3"E303 D O O D ^ A 4 I "T"- y & - / 3 -/5~ 1 M-Bit Mask Programmable ROM Description The CXK381000 CXK381000 is a CMOS silicon gate mask programmable read-only memory organized as 131,072 words by 8 bits. The chip enable input deselects the outputs and puts the chip in a power dow n mode. Features · Access time: 2 00 ns Max. · Autom atic pow er down . Fully static operation . . . No clock or tim ing strobe required · Directly TTL compatible: All inputs and outp ... OCR Scan
datasheet

1 pages,
96.14 Kb

IC pin configuration datasheet abstract
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Abstract: SONY CO RP /C OMPO NE NT PRODS TO 1 > e | 5365363 O O O O ^ b D |~7^-/3-'S"' 3 2 K X 8 bit Mask Programmable ROM D escription The C X K 38256 is a CMOS mask-programmable ROM organized as 3 2 ,7 6 8 words by 8 bits. The Chip Enable input deselects the outputs and puts the chip in a power down mode. The active level of the Output Enable is defined by the customer. Package Outline Unit: mm Features · Fast access time: 2 5 0 ns Max . Automatic power down · Fully static operation . . . ... OCR Scan
datasheet

1 pages,
82.84 Kb

datasheet abstract
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Abstract: HM62W8512BI HM62W8512BI Series 4 M SRAM (512-kword - 8-bit) ADE-203-1086A ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI HM62W8512BI is a 4-Mbit static RAM organized 512-kword - 8-bit. HM62W8512BI HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II. Features · Singl ... Original
datasheet

1 pages,
9.04 Kb

Hitachi DSAUTAZ006 HM62W8512BI ADE-203-1086A HM62W8512BI abstract
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Abstract: HM62W8512B HM62W8512B Series 4 M SRAM (512-kword - 8-bit) ADE-203-904F ADE-203-904F (Z) Rev. 5.0 Mar. 15, 2000 Description The Hitachi HM62W8512B HM62W8512B is a 4-Mbit static RAM organized 512-kword - 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62W8512B HM62W8512B is suitable for battery backup system. Features · Sin ... Original
datasheet

1 pages,
8.2 Kb

Hitachi DSAUTAZ006 HM62W8512B ADE-203-904F HM62W8512B abstract
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Abstract: OPA8847 OPA8847 Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min VF(1) Typ Max Unit Condition V IF=10uA V IF=100mA V IR=10uA 1.1 VF(2) 1.6 Reverse Voltage VR Power PO 1.65 mW IF=50mA ... Original
datasheet

1 pages,
90.44 Kb

OPA8847 GaAlAs LED CHIP OPA8847 abstract
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injection (10pC max), low power consumption (1.65mW), and an ESD tolerance of 2000V minimum per Method Consumption (1.65mW max) Rail-to-Rail Signal Handling TTL/CMOS-Logic Compatible
www.datasheetarchive.com/files/maxim/0001/quick068.htm
Maxim 04/04/2001 6.7 Kb HTM quick068.htm
Power dissipation at 25°C: 165mW Photocurrent, collector to
www.datasheetarchive.com/files/maplin/products/02/2/60prodd.htm
Maplin 28/02/2002 7.44 Kb HTM 60prodd.htm
(1.65mW), and an ESD tolerance of 2000V minimum per Method 3015.7. The new design offers lower off-leakage +10V to +30V Bipolar-Supply Operation ±4.5V to ±20V Low Power Consumption (1.65mW max) Rail-to-Rail
www.datasheetarchive.com/files/maxim/0015/quick181.htm
Maxim 02/05/2002 12.54 Kb HTM quick181.htm
package. Features Single +3.3V Supply 622Mbps Serial to 77Mbps Parallel Conversion 165mW
www.datasheetarchive.com/files/maxim/0010/quick002.htm
Maxim 04/04/2001 5.77 Kb HTM quick002.htm
+5V Supply 165mW Power Dissipation (at 3.3V) 1.8GHz Analog Input Bandwidth Programmable
www.datasheetarchive.com/files/maxim/0010/quick030.htm
Maxim 04/04/2001 6.13 Kb HTM quick030.htm
Capacity (VR = 0V):189 Power dissipation at 258C: 165mW
www.datasheetarchive.com/files/maplin/products/02/2/59prodd.htm
Maplin 28/02/2002 10.24 Kb HTM 59prodd.htm
72dB SINAD Low Power Dissipation: 16.5mW 3V Single Supply Operation 2.5V Internal
www.datasheetarchive.com/files/linear/c1155/c1001/c1158/p37412/p37412.html
Linear 09/02/2007 7.96 Kb HTML p37412.html
75dB SINAD Low Power Dissipation: 16.5mW 3V Single Supply Operation 2.5V Internal
www.datasheetarchive.com/files/linear/c1155/c1001/c1158/p36633/p36633.html
Linear 09/02/2007 7.96 Kb HTML p36633.html
down to reduce power consumption by 165mW. The fully differential architecture ensures low crosstalk
www.datasheetarchive.com/files/maxim/0006/quick048.htm
Maxim 04/04/2001 6.32 Kb HTM quick048.htm
drivers will be powered down to reduce power consumption by 165mW, a unique power-saving feature. Power
www.datasheetarchive.com/files/maxim/0005/view_004.htm
Maxim 04/04/2001 7.74 Kb HTM view_004.htm