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CD74ACT164ME4 Texas Instruments ACT SERIES, 8-BIT RIGHT SERIAL IN PARALLEL OUT SHIFT REGISTER, TRUE OUTPUT, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14 visit Texas Instruments
CD74HC164M96E4 Texas Instruments HC/UH SERIES, 8-BIT RIGHT SERIAL IN PARALLEL OUT SHIFT REGISTER, TRUE OUTPUT, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14 visit Texas Instruments
CD74HCT164M96G4 Texas Instruments High Speed CMOS Logic 8-Bit Serial-In/Parallel-Out Shift Register 14-SOIC -55 to 125 visit Texas Instruments
CD74AC164M Texas Instruments 8-Bit Serial-In/Parallel-Out Shift Register 14-SOIC -55 to 125 visit Texas Instruments
CD74ACT164MG4 Texas Instruments 8-Bit Serial-In/Parallel-Out Shift Register 14-SOIC -55 to 125 visit Texas Instruments

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164M

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: periods (greater than 16.4ms) of RAS inactivity before proper device operation is achieved. 7 : Measured , ) RAS only refresh cycles within 16.4m s. 1 .1.2 N ote : R AS only distributed refresh â , cycle Table 2 R e a d /W rite CBR burst refresh tNSB S 16.4m s RAS only burst refresh , tSNB S 16 .4m s S 16.4m s Definition o f burst refresh 1R.4ma read/write cycles refresh , continuous CBR cycles w ithin 1024 16.4m s. D efinition o f RAS only burst refresh All combinations -
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M5M4V4400J 4194304-BIT 1048576-WORD
Abstract: (104m) 140m(112m) 190m(152m) 205m(164m) 272m(218m) 327m(262m) 356m(285m) 470m(377m) 560m(446m) 700m(558m , (771m) 640m(512m) 424m(339m) 205m(164m) 275m(220m) 302m(241m) 150m(120m) 107.5m(86m) 1.35 1.10 900m Sumida
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CDRH3D16/HP CDRH3D23/HP CDRH3D28 CDRH3D28/LD CDRH3D16/LD CDRH3D18

471k

Abstract: RCH1216BNP-331K 156m(124m) 2.55 2.35 1.90 -0015 16 RCH1216BNP-181K 181K 180H ±10 206m(164m , 180H ±10 206m(164m) 2.20 2.05 1.65 -0016 17 RCH1216BNP-221K 221K 220H±10
Sumida
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RCH1216BNP-331K 471k cd 471k 10H47H RCH1216BNP-1 RCH1216BNP-12 RCH1216BNP-15 RCH1216BNP-18 RCH1216BNP-22
Abstract: /W r ite -* Self Refresh R e a d /W rite CBR burst refresh tNSB S 16.4m s RAS only burst refresh (B ) Self R efresh-» R ea d /W rite ts N B tNSB + tSNB S 16.4m s S 16.4m s Definition o f burst refresh Definition o f CBR burst refresh The CBR burst refresh performs more than continuous CBR cycles w ithin 1024 16.4m s. Definition o f RAS only burst , cycles w ithin 1.2.1 1024 continuous RAS only 16.4m s. CBR burst refresh 1.2.2 -
OCR Scan
M52734SP 52734SP 130MH D02530
Abstract: 150H 180H 220H 270H 330H 390H 470H 560H 680H 820H 1.0 mH 19.5m(15.0m) 21.3m(16.4m) 26.4m , 4785-0107 17.7m(13.6m) 7.40 4785-0108 19.5m(15.0m) 21.3m(16.4m) 26.4m(20.3m) 28.0m(21.5m Sumida
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S-074-1510 CDRH127/LD 4H56H 68H150H 180H1 CDRH127/LDNP-1R
Abstract: TTL compatible and low capacitance â'¢ 1024 refresh cycles every 16.4ms (Ao~A9) * : Applicable to , R A S /C A S cycles a re required after prolonged periods (greater than 16.4m s) of RAS inactivity , cycles (1K) must be made within tNS / tsN before / after self refresh, on the condition of tNS^ 16.4ms and tsN^16.4m s. tNS tSN T T T F ÏÏT D IS T R IB U T E D R E F R E S H < 1K / 16.4m s > D IS T R IB U T E D R E FR E S H < 1K / 16.4m s > (2) In case of burst refresh The last -
OCR Scan
16777216-BIT 16-BIT M5M4V18160CTP-5 M5M4V18160CTP-7 M5M4V18160CTP-6 DQ9-DQ16

MHF215-03A

Abstract: 105M yMHF215 SERIESz For 25"` Color TV `@Ð@i@¼ MHF215-03A MHF215-08A MHF215-12A MHF215-13A MHF215-14A è@E@@@³ GI 14.5 KVD.C 164M¶}20% 13.5 KVD.C 200M¶}20% 13.5 KVD.C 120M¶}20% 12.0 KVD.C 105M¶}20% 13.5 KVD.C 120M¶}20% G2 60.3 M¶ 35.6 M¶ 15.1 M¶ 2.5 M¶ 0.0 M¶ G3 46.4 M¶ 60.4 M¶ 35.5 M¶ 39.4 M¶ 42.7 M¶ G4 37.5 M¶ 78.3 M¶ 57.0 M¶ 46.0 M¶ 55.3 M¶ G5 18.6 M¶ 20.5 M¶ 11.7 M¶ 15.2 M¶ 17.5 M¶ G6 1.2 M
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105M 120M MHF215

Digital Echo delay 16 Pin ICs

Abstract: MITSUBISHI Digital Echo number of memory bits=20480 ) When fck=1 MHz ( fs=125kHz), Td can be set at 164ms. « Reference » The , 01-200 Clock Frequency (Hz) 11.0M~5.5M 5 .3M -1.64M 1.62M~800K K value 0.8 X 10 1 1.0 X 1 0 1 1 , pass frequency( Hz ) band ( Hz ) 11.0M ~ 5.5M 5.3M ~ 1.64M 1.62M ~ 800k LPF R1 f ß ) R2 ( a , C APPLICATION EXAMPLE · ECHO Delay time 164ms (Signal pass band 3kHz) < M65850P > < M65850F P
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Digital Echo delay 16 Pin ICs MITSUBISHI Digital Echo 16 Pin Echo delay digital ICs MITSUBISHI Digital Echo delay 16 Pin ICs delay echo circuit diagram MITSUBISHI Digital Echo delay 8 ICs M65850P/FP M65850P/M65850FP 16P2N 65850P

TNY266P

Abstract: EE16 5V ELYTONE ELECTRONIC CO.,LTD. Testing Item Specification General Electrical Specifications at Operating Temperature Primary Voltage Range Secondary Voltage Range Output Power Range Core Type Inductance @100KHz , 0.1Vrms 25 -20~ 80 90VAC~265VAC 5VDC 24VDC 2.5W 4.8W EE16 1.57mH ­0/+20% (1-4 at other windings open) 2.8 max (1-4) 164m max (8-5) 17.5m max (5-6) 60H max (1-4 with 5,6,7,8 Shorted) 600KHz min (1-4 other windings open) 200VAC 60Hz 1sec form pins 1~4 to pins 5~8
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TNY266P EE16 5V ee16 5 2 pin 164m TNY266 EE16 100KH 600KH ETDER110 YTB-17687
Abstract: control oscillation circuit for generating clocks â'¢D e la y time = 164msec (Min.15ms to max. 200 ms , at 164m s. « R e f e r e n c e » T h e M 6 5 8 5 5 F P adopts A D M (adaptive Delta Modulation , signal pass band, please refer to the table below. ( Delay tim e 164m sec (W hen M aster clock 1M H z -
OCR Scan
M65855FP

229m

Abstract: -5R6N I 5.6H±25 164m(131m) 1.05 0.80 1.10 CDRH3ØD18SNP-6R8N J 6.8H±25 196m(157m
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229m CDRH30D18/S D18SNP-1R2N D18SNP-1R5N D18SNP-1R8N D18SNP-2R2N D18SNP-2R7N

RCH1216B

Abstract: inductor 2mH ±10 156m(124m) 2.55 2.35 1.90 RCH1216BNP-181K 181K 180H ±10 206m(164m) 2.20
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RCH1216B inductor 2mH RCH1216BNP-151K RCH1216BNP-271K RCH1216BNP-391K RCH1216BNP-471K RCH1216BNP-561K

270uH

Abstract: CDC5D23 4R7 ) / 0.96 391 390µH 150 15µH 166m (128m) / 0.88 471 470µH 180 18µH 213m (164m
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CDC5D23 270uH CDC5D23 4R7
Abstract: ) 13.8m(10.6m) 16.2m(12.4m) 17.7m(13.6m) 19.5m(15.0m) 21.3m(16.4m) 26.4m(20.3m) 28.0m(21.5m) 36.4m Sumida
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CDRH127 CDRH127/LD-1R0NC CDRH127/LD-2R4NC CDRH127/LD-3R5NC CDRH127/LD-4R6NC CDRH127/LD-5R8NC
Abstract: /-30% +/-30% +/-30% 100 16.4m 5.0 3R3N-H 3.3 100 20m +/-30% 4.1 4R7N-H 4.7 +/-30% 100 27m TDK
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CLF7045-H 100M-H 150M-H 220M-H 330M-H 470M-H
Abstract: capacitance â'¢ 1024 refresh cycles every 16.4ms (Ao~Ag) w 0? R Ã" S Qb NC 39 13 DQ9 Â , or R A S /C A S cycles are required after prolonged periods (greater than 16.4m s) of RAS Inactivity , / tsN before / after self refresh, on the condition of tNsS16.4m s and tSN^ 16.4ms. tNS DIS TR IB U TE D R E FR E S H < 1K / 16.4m s > (2) tSN 1024 cycles , 1024 cycles D IS T , lf re fre s h , o n th e c o n d itio n o f tNS +tSN^16.4m s. tNS 1 B U R S T R E FR E S H -
OCR Scan
M5M4V18165BTP-6 16777216-B MSM4V181S5BTP-7 M5M4V18165B M5M4V18165B-8S M5M4V18165B-7S

CDR7D28MN

Abstract: ) * IV 1R2 1R5 1.2µ 1.5µ 20.5m(16.4m) 5.61 4.42 2.0µ 23.8m( 19m) 4.30 3.45
Sumida
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CDR7D28MN

337M

Abstract: CDC5D23B ) 880m 180 18µ 213m(164m) 770m 220 22µ 248m(191m) 730m 270 27µ 328m(252m
Sumida
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CDC4D20 CDC5D23B 337M 47mh smd 772m 151 SMD code
Abstract: (B) Read/ W rite-» Self Refresh Self Refresh-» Read/Write tNSB S 16.4ms tsNB ë 16.4ms tNSB + tSNB S 16.4ms Definition of burst refresh 16.4m s RAS refresh cycles 1 024 , every 16.4m s(A o~ A 9) â'¢ 1024 refresh cycles every 12 8 m s(A o ~ A 9 )* * Applicable to self , /Write 16.4ms tSND á 16 MS (B ) Definition of distributed refresh tREF tR E F /1 0 2 4 , only refresh cycles within 16.4ms. 20 " v T \r read / w rite cycles â'¢ Switching from -
OCR Scan
MMV4400J M5M4V4400TP 5M4V4400TP M5M4V4400RT V4400J 26P0J

m5m4v4400tp6

Abstract: every 16.4m s (A o ~ A 9 ) · 1024 refresh cycles every 1 2 8 m s (A o ~ A 9 )' * Applicable to self , required a fte r prolonged periods (greater than 16.4m s) o f RAS in activity before proper device , rite â 16.4ms tSN D S 16 us S 16 us (B ) Definition o f distributed refresh tREF t R E F , selected during 1024 constant pe riod(1 6 u s m a x ) RAS only refresh cycles w ithin 16.4ms. Note : Hidden , rite CBR burst refresh ftA S only burst refresh R e a d /W rite -* Self Refresh tNSB £ 16.4ms Self R
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m5m4v4400tp6 M5M4V4400TP-6 M5M4V4400TP-7 M5M4V44

28F640J5a

Abstract: 28F160B3 ) RAS only refresh cycles within 16.4m s. 1 .1.2 N ote : R AS only distributed refresh â , cycle Table 2 R e a d /W rite CBR burst refresh tNSB S 16.4m s RAS only burst refresh , tSNB S 16 .4m s S 16.4m s Definition o f burst refresh 1R.4ma read/write cycles refresh , continuous CBR cycles w ithin 1024 16.4m s. D efinition o f RAS only burst refresh All combinations , only refresh cycles within 16.4m s. 1.2.1 1 .2 .2 CBR burst refresh RAS only burst refresh
Intel
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28F320B3 28F160F3 28F160B3 28F016B3 28F800C3 28F800F3 28F640J5a iMC016FLSG iMC008FLSC 9021b flash memory 5v 16m 28F320C3 28F032C3 28F160C3 28F016C3

lh28f032sutd-70

Abstract: 56TSOP /W r ite -* Self Refresh R e a d /W rite CBR burst refresh tNSB S 16.4m s RAS only burst refresh (B ) Self R efresh-» R ea d /W rite ts N B tNSB + tSNB S 16.4m s S 16.4m s Definition o f burst refresh Definition o f CBR burst refresh The CBR burst refresh performs more than continuous CBR cycles w ithin 1024 16.4m s. Definition o f RAS only burst , cycles w ithin 1.2.1 1024 continuous RAS only 16.4m s. CBR burst refresh 1.2.2
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LH28F032SUTD LH28F016SU 56TSOP lh28f032sutd-70 LH28F008SA LH28F800SU TSOPQ56-P-1420 LH28F032SU TSOP056-P-1420
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