NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PIN-OUT DIAGRAM FEATURES: · Configurations Available: 8 Megabit: 1 Meg x 8 16 Megabit: 2 Meg x 8 , PRELIMINARY ORDERING INFORMATION MECHANICAL DRAWING 8 Megabit (1 Meg x 8) 16 Megabit (2 Meg x 8 , 8 Megabit 3.3 Volt CMOS SRAM 16 Megabit 3.3 Volt CMOS SRAM PRELIMINARY DESCRIPTION: The , with 512K x 8, 3.3 Volt SRAM's. The 4 Megabit based LP-StackTM modules have been designed to fit in the same footprint as the 512K x 8 SRAM TSOP monolithic. This allows the memory board designer to ... | Original |
2 pages, |
megabit datasheet abstract |
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| Abstract: the memory board, thus saving time and money. 8 Megabit CMOS SRAM 16 Megabit CMOS SRAM PIN-OUT DIAGRAM FEATURES: · Configurations Available: 8 Megabit: 1 Meg x 8 16 Megabit: 2 Meg x 8 · Access , INFORMATION MECHANICAL DRAWING 8 Megabit (1 Meg x 8) 16 Megabit (2 Meg x 8) Dense-Pac Microsystems , space saving TSOP technology. The modules are constructed with 512K x 8, 5 Volt SRAM's. The 4 Megabit based LP-StackTM modules have been designed to fit in the same footprint as the 512K x 8 SRAM TSOP ... | Original |
2 pages, |
cmos sram 16 512k x 8 chip block diagram datasheet abstract |
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| Abstract: without notice 8 ©2003 Maxwell Technologies. All rights reserved. 16 Megabit (512K x 32-Bit)Low , 89LV1632 89LV1632 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM , Technologies. All rights reserved. 89LV1632 89LV1632 16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM TABLE 1. , Maxwell Technologies. All rights reserved. 89LV1632 89LV1632 16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM , rights reserved. 16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM 89LV1632 89LV1632 TABLE 9. 89LV1632 89LV1632 ... | Original |
12 pages, |
all data sheet 89LV1632 89LV1632 abstract |
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| Abstract: PRELIMINARY SPACE ELECTRONICS INC. 16 MEGABIT (512K X 32-BIT 32-BIT) MCM SRAM SPACE PRODUCTS 89C1632RP 89C1632RP 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE SEi 89C1632RP 89C1632RP Power 4Mb , reserved. 16 MEGABIT (512K X 32-BIT 32-BIT) MCM SRAM TABLE 1. PIN DESCRIPTION PIN DESCRIPTION A0-A18 A0-A18 , Space Electronics Inc. All rights reserved. PRELIMINARY 89C1632RP 89C1632RP 16 MEGABIT (512K X 32-BIT 32-BIT , 89C1632RP 89C1632RP 16 MEGABIT (512K X 32-BIT 32-BIT) MCM SRAM TABLE 5. 89C1632RP 89C1632RP DC ELECTRICAL CHARACTERISTICS ... | Original |
10 pages, |
32-BIT 32-BIT abstract |
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| Abstract: PRELIMINARY SPACE ELECTRONICS INC. 16 MEGABIT (512K X 32-BIT 32-BIT) MCM SRAM SPACE PRODUCTS 89C1632RP 89C1632RP 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE SEi 89C1632RP 89C1632RP Power 4Mb , reserved. 16 MEGABIT (512K X 32-BIT 32-BIT) MCM SRAM TABLE 1. PIN DESCRIPTION PIN DESCRIPTION A0-A18 A0-A18 , ©1999 Space Electronics Inc. All rights reserved. PRELIMINARY 89C1632RP 89C1632RP 16 MEGABIT (512K X , reserved. PRELIMINARY 89C1632RP 89C1632RP 16 MEGABIT (512K X 32-BIT 32-BIT) MCM SRAM TABLE 5. 89C1632RP 89C1632RP DC ... | Original |
9 pages, |
89C1632RP-25 32-BIT 32-BIT abstract |
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| Abstract: 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 8. 89C1632 89C1632 FUNCTIONAL DESCRIPTION CS WE OE MODE , 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 , All rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 1. PINOUT DESCRIPTION , 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 4. 89C1632 89C1632 CAPACITANCE (f = 1.0 MHZ, dV = 3.0V, TA = 25 , without notice 3 ©2001 Maxwell Technologies. All rights reserved. 89C1632 89C1632 16 Megabit (512K x ... | Original |
13 pages, |
89C1632 89C1632 abstract |
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| Abstract: 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 , rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 1. PINOUT DESCRIPTION PIN , ©2003 Maxwell Technologies. All rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM , All rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 6. 89C1632 89C1632 AC , 4 ©2003 Maxwell Technologies. All rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM ... | Original |
13 pages, |
89C1632 512K x 8 bit sram 32 pin 89C1632 abstract |
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| Abstract: reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 8. 89C1632 89C1632 FUNCTIONAL DESCRIPTION CS , 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 , Technologies. All rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit) MCM SRAM TABLE 1. PINOUT , without notice 2 ©2005 Maxwell Technologies. All rights reserved. 89C1632 89C1632 16 Megabit (512K x , notice 3 ©2005 Maxwell Technologies. All rights reserved. 89C1632 89C1632 16 Megabit (512K x 32-Bit ... | Original |
13 pages, |
89C1632 89C1632 abstract |
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| Abstract: notice 8 ©2007 Maxwell Technologies. All rights reserved. 16 Megabit (512K x 32-Bit)Low , 89LV1632 89LV1632 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS , rights reserved. 89LV1632 89LV1632 16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM TABLE 1. PINOUT , notice 2 ©2007 Maxwell Technologies. All rights reserved. 16 Megabit (512K x 32-Bit)Low , ©2007 Maxwell Technologies. All rights reserved. 89LV1632 89LV1632 16 Megabit (512K x 32-Bit)Low Voltage ... | Original |
12 pages, |
89LV1632 89LV1632 abstract |
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| Abstract: 89LV1632 89LV1632 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM , rights reserved. 89LV1632 89LV1632 16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM TABLE 1. PINOUT , notice 2 ©2005 Maxwell Technologies. All rights reserved. 16 Megabit (512K x 32-Bit)Low , rights reserved. 89LV1632 89LV1632 16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM TABLE 6. 89LV1632 89LV1632 AC , change without notice 4 ©2005 Maxwell Technologies. All rights reserved. 16 Megabit (512K x ... | Original |
12 pages, |
89LV1632 89LV1632 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| reduces setup and hold times. Time-out delays become a thing of the past. The 16-megabit (Mbit) SDRAM Two banks for on-chip interleaving Burst of 1, 2, 4 or 8 transfers per column address Read latency is programmable (and full page for x16 organization) Technical Brief: Meeting system DRAM Family to Support PC Applications TMS626162 TMS626162 TMS626162 TMS626162 16-Megabit Synchronous DRAM Fact Sheet PC Core , or gated, to a single system clock. With all operations being synchronous to the system clock www.datasheetarchive.com/files/texas-instruments/sc/docs/memory/sdram.htm |
Texas Instruments | 12/11/1996 | 5.46 Kb | HTM | sdram.htm |
| .0 Intel DA28F016XS-15 DA28F016XS-15 DA28F016XS-15 DA28F016XS-15 28F016XS 28F016XS 28F016XS 28F016XS 16Megabit (1meg X 16 or 2meg X 8 User Configurable ) Synchronous Flash .0 Intel DA28F016XS-20 DA28F016XS-20 DA28F016XS-20 DA28F016XS-20 28F016XS 28F016XS 28F016XS 28F016XS 16Megabit (1meg X 16 or 2meg X 8 User Configurable ) Synchronous Flash .0 Intel DA28F016XS-15 DA28F016XS-15 DA28F016XS-15 DA28F016XS-15 28F016XS 28F016XS 28F016XS 28F016XS 16Megabit (1meg X 16 or 2meg X 8 User Configurable ) Synchronous Flash .0 Intel DA28F016XS-20 DA28F016XS-20 DA28F016XS-20 DA28F016XS-20 28F016XS 28F016XS 28F016XS 28F016XS 16Megabit (1meg X 16 or 2meg X 8 User Configurable ) Synchronous Flash 28F016XS-20 28F016XS-20 28F016XS-20 28F016XS-20 0.0 Intel DA28F016XS-20 DA28F016XS-20 DA28F016XS-20 DA28F016XS-20 28F016XS 28F016XS 28F016XS 28F016XS 16Megabit (1meg X 16 or 2meg X 8 User Configurable www.datasheetarchive.com/download/0000000-710130ZC/eeprom-parallel-sync.xls |
Memory | 21/03/1997 | 35.5 Kb | XLS | eeprom-parallel-sync.xls |
| VRAMs are currently in production in x4 and x8 configurations. Military Memory Products reduces setup and hold times. Time-out delays become a thing of the past. The 16-megabit (Mbit) SDRAM -chip interleaving One transfer per column address Burst of 1, 2, 4 or 8 transfers per column address (and full page for x16 organization) Read latency is nonprogrammable Read latency is programmable Instruments Expands Synchronous DRAM Family to Support PC Applications TMS626162 TMS626162 TMS626162 TMS626162 16-Megabit Synchronous www.datasheetarchive.com/files/texas-instruments/sc/docs/memory/simms.htm |
Texas Instruments | 12/11/1996 | 9.14 Kb | HTM | simms.htm |
| -Standard Synchronous DRAM Devices for High-Performance Memory Systems TI 16-megabit SDRAM Debuts in Siemens introduced two low-voltage, 16-megabit (Mbit) synchronous dynamic random access memory (SDRAM) devices into volume production. These JEDEC-standard devices are organized x4 and x8 and operate at 66 and 83 versions, with 100 MHz versions expected later this year. The x4 and x8 devices, the TMS626402 TMS626402 TMS626402 TMS626402 and TMS resale pricing of the devices is $90 each in quantities of more than 100. The x4 and x8 versions are www.datasheetarchive.com/files/texas-instruments/data/sc/docs/news/1995/95049a.htm |
Texas Instruments | 08/02/1999 | 5.33 Kb | HTM | 95049a.htm |
| -Standard Synchronous DRAM Devices for High-Performance Memory Systems TI 16-megabit SDRAM Debuts in Siemens introduced two low-voltage, 16-megabit (Mbit) synchronous dynamic random access memory (SDRAM) devices into volume production. These JEDEC-standard devices are organized x4 and x8 and operate at 66 and 83 versions, with 100 MHz versions expected later this year. The x4 and x8 devices, the TMS626402 TMS626402 TMS626402 TMS626402 and TMS resale pricing of the devices is $90 each in quantities of more than 100. The x4 and x8 versions are www.datasheetarchive.com/files/texas-instruments/sc/docs/news/1995/95049a.htm |
Texas Instruments | 27/07/1995 | 5.09 Kb | HTM | 95049a.htm |
| performance. This new 512K word by 16 bits wide by two bank SDRAM broadens the TI SDRAM portfolio which also consists of the x4 and x8 parts. In addition, the x16 devices feature a pipeline overall performance of their systems with new 16 Megabit synchronous dynamic random access memory (SDRAM improve performance of PCs and other systems or to maintain similar performance while reducing cost through the elimination of the discrete memory second level cache or of the separate graphic memory www.datasheetarchive.com/files/texas-instruments/data/sc/docs/news/1996/96004a.htm |
Texas Instruments | 08/02/1999 | 4.96 Kb | HTM | 96004a.htm |
| performance. This new 512K word by 16 bits wide by two bank SDRAM broadens the TI SDRAM portfolio which also consists of the x4 and x8 parts. In addition, the x16 devices feature a pipeline overall performance of their systems with new 16 Megabit synchronous dynamic random access memory (SDRAM improve performance of PCs and other systems or to maintain similar performance while reducing cost through the elimination of the discrete memory second level cache or of the separate graphic memory www.datasheetarchive.com/files/texas-instruments/sc/docs/news/1996/96004a.htm |
Texas Instruments | 05/03/1996 | 4.62 Kb | HTM | 96004a.htm |
| Related Documentation Related Semiconductor Documents 1. 16-MEGABIT SYNCHRONOUS DRAM spnz093.pdf (16 KBytes) 8. DSP SOLUTIONS FOR TELEPHONY AND DATA/FAX MODEMS spra073.pdf (506 KBytes) 9. ERRATA FOR TMS370CX7X 8-BIT MICROCONTROLLER DATA SHEET spns052.pdf (27 KBytes) 10 003a.pdf (19 KBytes) 13. ERRATA TO THE TMS370CX8X 8-BIT MICROCONTROLLER DATA SHEET spnz104.pdf .pdf (364 KBytes) 67. TMS320C8X (DSP) FUNDAMENTAL GRAPHIC ALGORITHMS spra069.pdf (437 KBytes) 68 www.datasheetarchive.com/files/texas-instruments/sc/docs/psheets/related.htm |
Texas Instruments | 12/02/1997 | 18.35 Kb | HTM | related.htm |
| -Line Memory Module (SIMM) for Use With Socket TM124BBJ32F TM124BBJ32F TM124BBJ32F TM124BBJ32F - Utilizes Two 16-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages TM248CBJ32F TM248CBJ32F TM248CBJ32F TM248CBJ32F - Utilizes Four 16-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages Long Refresh Period 16 ms (1024 Cycles) All Inputs, Outputs, Clocks Fully TTL Detect Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR t RAC t AA t CAC (DRAM) organized as four times 1048576 Ã- 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ TMS418160DZ TMS418160DZ TMS418160DZ www.datasheetarchive.com/files/texas-instruments/sc/psheets/abstract/datasht/smms661.htm |
Texas Instruments | 01/06/1998 | 7.31 Kb | HTM | smms661.htm |
| Single-In-Line Memory Module (SIMM) for Use With Socket TM124BBK32F TM124BBK32F TM124BBK32F TM124BBK32F - Utilizes Two 16-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages TM248CBK32F TM248CBK32F TM248CBK32F TM248CBK32F - Utilizes Four 16-Megabit DRAMs in Plastic Small-Outline J-Lead (SOJ) Packages Long Refresh Period 16 ms (1024 Cycles) All Inputs, Outputs, Clocks Fully Refresh Presence Detect Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR t RAC random-access memory (DRAM) organized as four times 1048576 Ã- 8 in a 72-pin SIMM. The SIMM is composed of www.datasheetarchive.com/files/texas-instruments/sc/psheets/abstract/datasht/smms649a.htm |
Texas Instruments | 01/06/1998 | 7.45 Kb | HTM | smms649a.htm |