NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TTL. Semiconductor Group 1 5.96 HYB514171BJ/BJL-50/-60/-70 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Ordering , No Connection Semiconductor Group 2 HYB514171BJ/BJL-50/-60/-70 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Pin Configuration (top view) P-SOJ-40-1 P-SOJ-40-1 Semiconductor Group 3 HYB514171BJ/BJL-50/-60/-70 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Block Diagram Semiconductor Group 4 HYB514171BJ/BJL-50/-60/-70 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Absolute , HYB514171BJ/BJL-50/-60/-70 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM DC Characteristics (cont'd) Parameter Symbol Limit Values ... | Original |
24 pages, |
Q67100-Q727 16-DRAM 514171BJ-50/-60/-70 514171BJL-50/-60/-70 514171BJ-50/-60/-70 abstract |
|
|||
| Abstract: TTL. Semiconductor Group 1 5.96 HYB 514175BJ/BJL-50/-55/-60 514175BJ/BJL-50/-55/-60 256K x 16-DRAM Ordering , 514175BJ/BJL-50/-55/-60 514175BJ/BJL-50/-55/-60 256K x 16-DRAM Pin Configuration (top view) P-SOJ-40-1 P-SOJ-40-1 Semiconductor Group 3 HYB 514175BJ/BJL-50/-55/-60 514175BJ/BJL-50/-55/-60 256K x 16-DRAM Block Diagram Semiconductor Group 4 HYB 514175BJ/BJL-50/-55/-60 514175BJ/BJL-50/-55/-60 256K x 16-DRAM Absolute Maximum Ratings Operating temperature range , 514175BJ/BJL-50/-55/-60 514175BJ/BJL-50/-55/-60 256K x 16-DRAM DC Characteristics (cont'd) Parameter Symbol Limit Values ... | Original |
24 pages, |
514175BJ 514175BJL-50/-55/-60 514175BJ abstract |
|
|||
| Abstract: families. Semiconductor Group 1 7.96 HYB 314171BJ/BJL-50/-60/-70 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM , 314171BJ/BJL-50/-60/-70 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Pin Configuration (top view) P-SOJ-40-1 P-SOJ-40-1 Semiconductor Group 3 HYB 314171BJ/BJL-50/-60/-70 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Block Diagram Semiconductor Group 4 HYB 314171BJ/BJL-50/-60/-70 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Absolute Maximum Ratings Operating , ICC3 5 2, 4 125 105 85 mA HYB 314171BJ/BJL-50/-60/-70 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM DC ... | Original |
24 pages, |
314171BJ-50/-60/-70 314171BJL-50/-60/-70 314171BJ-50/-60/-70 abstract |
|
|||
| Abstract: Its Respective Manufacturer 11.93 SIEMENS HYB 514171BJ/BJ 514171BJ/BJ L-60/-70/-80 L-60/-70/-80 256 K x 16-DRAM Ordering , SIEMENS HYB 514171BJ/BJ 514171BJ/BJ L-60/-70/-80 L-60/-70/-80 256 K x 16-DRAM Pin Configuration P-SOJ-40-1 P-SOJ-40-1 "cc [ O 40 , SIEMENS HYB 514171BJ/BJ 514171BJ/BJ L-60/-70/-80 L-60/-70/-80 256 K x 16-DRAM WRITE -CÄS- AO-A1- A2-A3-A4-A5-A6-A7-A8- RAS- , Copyrighted By Its Respective Manufacturer SIEMENS HYB 514171BJ/BJ 514171BJ/BJ L-60/-70/-80 L-60/-70/-80 256 K x 16-DRAM Absolute , By Its Respective Manufacturer SIEMENS HYB 514171BJ/BJ 514171BJ/BJ L-60/-70/-80 L-60/-70/-80 256 K x 16-DRAM DC ... | OCR Scan |
24 pages, |
Q67100-Q727 Q729 16-DRAM 514171BJ-60/-70/-80 514171BJL-60/-70/-80 514171BJ-60/-70/-80 abstract |
|
|||
| Abstract: Semiconductor Group 5 HYB 3164(5)160T-50/-60 160T-50/-60 4M x 16-DRAM This device is a 64 MBit dynamic RAM , Semiconductor Group 6 HYB 3164(5)160T-50/-60 160T-50/-60 4M x 16-DRAM P-SOJ-54-1 P-SOJ-54-1 (500 mil) P-TSOPII-54-1 P-TSOPII-54-1 (500 , Group 7 HYB 3164(5)160T-50/-60 160T-50/-60 4M x 16-DRAM TRUTH TABLE RAS LCAS UCA S WRIT E OE , X ROW COL Data In Semiconductor Group 8 HYB 3164(5)160T-50/-60 160T-50/-60 4M x 16-DRAM Block Diagram for HYB 3164160T 3164160T Semiconductor Group 9 HYB 3164(5)160T-50/-60 160T-50/-60 4M x 16-DRAM ... | Original |
26 pages, |
HYB3165160T-60 HYB3165160T-50 HYB3164160T-60 HYB3164160T-50 3164160T 3165160T 3164160T abstract |
|
|||
| Abstract: /-60 4M x 16-DRAM This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device , (L)-40/-50/-60 4M x 16-DRAM Pin Configuration P-TSOPII-50 P-TSOPII-50 (400 mil) O VCC I/O1 I/O2 I/O3 , Ground Semiconductor Group 3 HYB3164 HYB3164(5/6)160AT 160AT(L)-40/-50/-60 4M x 16-DRAM TRUTH TABLE , )160AT 160AT(L)-40/-50/-60 4M x 16-DRAM I/O1 I/O2 I/O16 I/O16 WE UCAS LCAS & . . Data in , 16-DRAM I/O1 I/O2 I/O16 I/O16 WE UCAS LCAS & . . Data in Buffer No. 2 Clock Generator ... | Original |
26 pages, |
TSOP 50 Package HYB3164160AT 16-DRAM 3164160AT 3165160AT 3166160AT 3164160AT abstract |
|
|||
| Abstract: Group P-TSOPII-50 P-TSOPII-50 400 mil 1 3.96 HYB3164 HYB3164(5/6)160AT 160AT(L)-40/-50/-60 4M x 16-DRAM This , (L)-40/-50/-60 4M x 16-DRAM Pin Configuration P-TSOPII-50 P-TSOPII-50 (400 mil) O VCC I/O1 I/O2 I/O3 , Ground Semiconductor Group 3 HYB3164 HYB3164(5/6)160AT 160AT(L)-40/-50/-60 4M x 16-DRAM TRUTH TABLE , )160AT 160AT(L)-40/-50/-60 4M x 16-DRAM I/O1 I/O2 I/O16 I/O16 WE UCAS LCAS & . . Data in , 16-DRAM I/O1 I/O2 I/O16 I/O16 WE UCAS LCAS & . . Data in Buffer No. 2 Clock Generator ... | Original |
26 pages, |
HYB3164160AT fast page mode dram controller 3164160AT 3165160AT 3166160AT 3164160AT abstract |
|
|||
| Abstract: families. Semiconductor Group 1 3.98 HYB314171BJ/BJL-50/-60/-70 HYB314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM , Semiconductor Group 2 HYB314171BJ/BJL-50/-60/-70 HYB314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Pin Configuration P-SOJ-40-1 P-SOJ-40-1 , HYB314171BJ/BJL-50/-60/-70 HYB314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Block Diagram I/O16 I/O16 I/O1 I/O2 WE UCAS LCAS & , 3.3V 256 K x 16-DRAM Absolute Maximum Ratings Operating temperature range , /-60/-70 3.3V 256 K x 16-DRAM DC Characteristics (cont' d) Parameter Symbol Limit Values ... | Original |
25 pages, |
marking wl3 314171BJ-50/-60/-70 314171BJL-50/-60/-70 314171BJ-50/-60/-70 abstract |
|
|||
| Abstract: 3116(8)160BSJ/BST 160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM The HYB 3116(8)160BSJ/BST 160BSJ/BST is a 16 MBit dynamic , (8)160BSJ/BST 160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM Pin Configuration (top view) P-SOJ-42 P-SOJ-42 (400 mil , NOP Semiconductor Group 3 HYB 3116(8)160BSJ/BST 160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM Block , 16-DRAM Block Diagram for HYB 3118160BSJ 3118160BSJ Semiconductor Group 5 HYB 3116(8)160BSJ/BST 160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM Absolute Maximum Ratings Operating temperature range ... | Original |
25 pages, |
Q67100-Q1164 3116160BSJ/BST 3118160BSJ/BST 3116160BSJ/BST abstract |
|
|||
| Abstract: Electronic-Library Service CopyRight 2003 SIEMENS H YB514171B YB514171B J/B J L-50/-60/-70 L-50/-60/-70 256K x 16-DRAM Ordering Information , 256K x 16-DRAM Pin Configuration (top view) P-SOJ-40-1 P-SOJ-40-1 ^ccC ' O 40 i/oic 2 39 ] 1/016 1/02 C 3 38 , Service CopyRight 2003 SIEMENS H YB514171B YB514171B J/B J L-50/-60/-70 L-50/-60/-70 256K x 16-DRAM WE UCAS LCAS AO AI A2 A3 A4 , SIEMENS H YB514171B YB514171B J/B J L-50/-60/-70 L-50/-60/-70 256K x 16-DRAM Absolute Maximum Ratings Operating temperature , L-50/-60/-70 L-50/-60/-70 256K x 16-DRAM DC Characteristics (cont'd) Parameter Symbol Limit Values Unit Notes ... | OCR Scan |
24 pages, |
datasheet abstract |
|
|||
| Abstract: Am186TMCC/CH/CU Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module TIP Connector Development Module Control Bus Address Bus AD Bus HDLC AD UART Clocks Communication Interface HP Hdrs RS422 RS422 XCVR RS530 RS530 DB25 RS422 RS422 XCVR RS530 RS530 DB25 RS422 RS422 XCVR ... | Original |
1 pages, |
RS232 DB9 AM186CC RS530 5V RS422 USB DB9 rs232 5v rs232 UART interface db9 rs232 socket Am186TMCC/CH/CU Am186TMCC/CH/CU abstract |
|
|||
| Abstract: 16-DRAM Ordering Information Type Ordering Code Package Description HYB 514171BJ-50 514171BJ-50 , /BJL-50/-60/-70 /BJL-50/-60/-70 256 K x 16-DRAM Pin Configuration P-SOJ-40-1 P-SOJ-40-1 Vcc I/O1 I/O2 I/O3 I/O4 Vcc I , 16-DRAM Block Diagram I/O16 I/O16 I/O1 I/O2 WE UCAS LCAS & . . Data in Buffer No. 2 , Group OE 4 VCC VSS 16 HYB514171BJ/BJL-50/-60/-70 HYB514171BJ/BJL-50/-60/-70 256 K x 16-DRAM Absolute Maximum , K x 16-DRAM DC Characteristics (cont'd) Parameter Symbol Limit Values min. Average VCC ... | Original |
24 pages, |
514171BJ-50/-60/-70 514171BJL-50/-60/-70 514171BJ-50/-60/-70 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| Flexible Memory Configurations 1MB: Two 256Kx16 DRAM 1MB: Two 128kx32 DRAM 1MB: Four 128kx16 DRAM 2MB: Four 256Kx16 DRAM 2MB: One 512kx32 DRAM 4MB: Eight 256Kx16 DRAM www.datasheetarchive.com/files/intel/products two & tools/design/graphics/mobile~1/products/65554/65554f.htm |
Intel | 02/05/1999 | 25.04 Kb | HTM | 65554f.htm |
| Flexible Memory Configurations 1MB: Two 256Kx16 DRAM 1MB: Two 128kx32 DRAM 1MB: Four 128kx16 DRAM 2MB: Four 256Kx16 DRAM 2MB: One 512kx32 DRAM 4MB: Eight 256Kx16 DRAM www.datasheetarchive.com/files/intel/design/graphics/mobile~1/products/65554/65554f.htm |
Intel | 01/11/1998 | 23.6 Kb | HTM | 65554f.htm |
| Flexible Memory Configurations 1MB: Two 256Kx16 DRAM 1MB: Two 128kx32 DRAM 1MB: Four 128kx16 DRAM 2MB: Four 256Kx16 DRAM 2MB: One 512kx32 DRAM 4MB: Eight 256Kx16 DRAM www.datasheetarchive.com/files/intel/design/graphics/mobile~1/products/65554/65554f-v1.htm |
Intel | 02/02/1999 | 23.59 Kb | HTM | 65554f-v1.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Intel's 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit Flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD 28F016XD 28F016XD 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533-v5.htm |
Intel | 31/10/1997 | 2.63 Kb | HTM | 290533-v5.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Intels 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit Flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD 28F016XD 28F016XD 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533-v4.htm |
Intel | 31/01/1997 | 2.01 Kb | HTM | 290533-v4.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Intel's 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD 28F016XD 28F016XD 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533-v1.htm |
Intel | 16/02/1998 | 2.62 Kb | HTM | 290533-v1.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Custom News For You Product Selector Price, Quote, & Ordering 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Product Discontinuance Notification Mar 30 1998 Jun 30 1998 www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533.htm |
Intel | 10/02/1999 | 9.63 Kb | HTM | 290533.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Intel's 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit Flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD 28F016XD 28F016XD 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533-v2.htm |
Intel | 03/08/1997 | 1.84 Kb | HTM | 290533-v2.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Custom News For You Product Selector Price, Quote, & Ordering 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Product Discontinuance Notification Mar 30 1998 Jun 30 1998 www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533-v6.htm |
Intel | 15/11/1998 | 9.5 Kb | HTM | 290533-v6.htm |
| 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit (1 Mbit x 16) DRAM-Interface Flash Memory Intel's 28F016XD 28F016XD 28F016XD 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD 28F016XD 28F016XD 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow www.datasheetarchive.com/files/intel/design/flcomp/datashts/290533-v3.htm |
Intel | 01/08/1998 | 2.58 Kb | HTM | 290533-v3.htm |