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150AYC10B (6609067-6) TE Connectivity (6609067-6) 150AYC10B=F7809 visit TE Connectivity
TPS61150ADRCRG4 Texas Instruments Dual Output Boost WLED Driver Using Single Inductor 10-VSON -40 to 85 visit Texas Instruments
TVP5150APBSR Texas Instruments Ultralow Power NTSC/PAL/SECAM Video Decoder w/Robust Sync Detector 32-TQFP 0 to 70 visit Texas Instruments
TVP5150AM1MPBSREP Texas Instruments Enhanced Product Ultralow Power NTSC/PAL/SECAM Video Decoder 32-TQFP -55 to 125 visit Texas Instruments Buy
TNETX3150AGGP Texas Instruments DATACOM, NETWORK INTERFACE SUPPORT CIRCUIT, PBGA352, PLASTIC, BGA-352 visit Texas Instruments

150a gto

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150a gto

Abstract: R60S2515ES Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 -â'" * POIilEREX INC for GTO Thyristors , rectifiers have a rated repetitive peak reverse voltage of 2500V and a rated average current of 150A (TC = , . Voilage Current Recovery Type Vrrm Code lj(aV) Code trr Code R60F 1600V 16 150A 15 2|j.S ES R60S 2000V , Le Mans, France (43) 41.14.14 R60S/R60F2515ES Fast Recovery Diode for GTO Thyristors 150 Amperes , Recovery Diode for GTO Thyristors 150 Amperes/2500 Volts Qra PERFORMANCE CURVES (TYPICAL) 1000 UJ
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R60S2515ES R60F2515ES 150a gto 150a gto 2000v gto 1600v 150A GTO 2000 V 16UNF2A

USD1120

Abstract: L5a 12v 30a 25A - ` t im USD1120 .45 @ 1A 50A USD1130 .475 @ 1A 50A (2 LEAD) USD620 .48 < § >6A 150A USD720 .48 @ 8A 200A " w tttrn -' USD620C .60 @ 12A 150A · *ss«ki:; 35V VrM TW ltV ': Vf , 80A USD635 .48 @ 6A 150 A USD640 .48 @ 6A 150A USD645 .48 @ 6A 150 A USD735 .48 @ 8A 200A USD740 , 12A 150A USD835 .51 @ 12A 200A USD840 .45 @ 12A 200A USD845 .45 @ 12A 200A 40V 45V Vi *FS , LEXIN GTO N , MA 02173 T E L . (617) 861-6540 TWX 1710) 326-6509 · T E L E X 95-1064 4-3 P R IN T
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USD1140 UBS430 UT347 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE T0447 150A 100V gto DO-41 USD820 1N5817 1N5818 1N5819
Abstract: Parameter Max. (reverse) leakage current Symbol Conditions I RRM V RRM , Tj = 150°C min typ , Limiting load integral 7180 t p = 10 ms, T j = 150°C, VR = 0 V It Max. peak non-repetitive , t p = 8.3 ms, T j = 150°C, VR = 0 V 2 A 2 26.7×106 A s Characteristic values Parameter On-state voltage Symbol Conditions VF I F = 5000 A, T j = 150°C Threshold voltage V F0 Slope resistance rF min typ Unit V 0.8 V 0.107 T j = 150°C I T = ABB Switzerland
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50N5500 5SYA1169-00 CH-5600

RETS741X

Abstract: MV 3581 Temperature Range ~55°GtO +125°C 0'Cto +70SC â'"55°GtO + 125°C 0'Cto +70°C Storage Temperature Range â'"65°Cto +150°C â'"65°Cto +150°C â'"65°Cto +150°C -65'Cto +150tC Junction Temperature 150°C 100°C 150Â
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LM741 LM201 MC1439 LM741AH LM741AJ LM741CJ RETS741X MV 3581 RETS741AX LM741A LM741 application note T-79- LM741/LM741A/LM741C/LM741E LM709

TL494 full bridge inverter

Abstract: dc motor speed control tl494 voltage rating of power MOSFET. T, = 150°C -A/W < HIGH VOLTAGE BIPOLAR LOW VOLTAGE HEXFET Figur , (ON) = 2 2V MAX" (Tj = 150° C) Ã" Vc-S = 6-8V MAX Figure 4. Maximum conduction voltage of BIMOS , Devices BIMOS SWITCH HIGH VOLTAGE HEXFET GTO Maximum voltage capability 1000V tooov 1800V Switching , 850-1500V 10A GTO Basic Device Cost 2N6547 S2.90 $7.00* $4.00* IRFZ24* Ï0.60 Other circuit components , thyristor (GTO). Each of the three alternatives has its own particular features, and each will find use in
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AN-946B TL494 full bridge inverter dc motor speed control tl494 switching power supply TL494 WELDING IR2N6547 TL494 full bridge Speed control of dc motor using TL494

GK2E

Abstract: GK2BN NIHON INTER ELECTRONICS SIE D â  bblS123 0D0D03T b â  ~T-4/-8f .SPECIFICATIONS Ei GATE DRIVER MODULES FOR GTO THYRISTOR absolute maximum ratings \Type SymboN, GK2AN , \ 603PGA100Ã-120E 1 GK20 1 Ì20)PQA!OOA~I20A \ For GTO V 120IPGA1Û0E-120E / *GK2D |FOJ 803PÃA200-250 OToj , ±0.8 5.0 ±0.5 5.0 ±0.5 5.0 ±0.5 8.0 ±0.5 V input voltage (off drive) Vr 15.0±1.0 15.0± 1.0 15.0± 1.0 15,0± 1.0 18.0± 1.0 V input signal voltage (to turn on) ' Vi 12.0±2.0 12.0 Â
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GK2E GK2BN GK2D GK2C GTO thyristor 603PGA 358RQAIO0-120 359BQAIO0-I2O 353POA100E-I20E 03POA100A-120A IPCA2C0-260

ALLEN-BRADLEY RESISTOR

Abstract: ALLEN-BRADLEY RESISTOR temperature control card (3500-BRC), GTO, diode and thermal switch. The control card monitors the DC bus voltage and provides the logic signals to control the GTO. A voltage selection jumper SI is provided on the card to , is charged. The card receives its power through a resistor from the DC bus. GTO VI controls the power , : 49" H x29" Wx 16" D R total 5.00 ohm I rated 75A I max 150A @ 20% Duty Cycle P max 112,500W @ 20sec
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ALLEN-BRADLEY RESISTOR ALLEN-BRADLEY RESISTOR temperature dc chopper circuit for overload protection dashpot fluid Allen-Bradley resistors diode v2
Abstract: 150PFT2300 Thyristors Gate Turn Off Thyristor (GTO) V(DRM) Max. (V)2.3k V(RRM) Max. (V) I(T) Rated Maximum (A)150± @Temp. (øC) (Test Condition)81# I(TSM) Max. (A) @ t(w) (s) (Test Condition) I(GT) Max. (A) V(GT) Max.(V) I(H) Max. (A) Holding Current I(D) Max. (A) Leakage Current @Temp. (øC) (Test Condition) V(T) Max. (V) @I(T) (A) (Test Condition) t(gt) Typ. (s) dv/dt Min. (V/us) t(q) Typ. (s) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Package StyleTO American Microsemiconductor
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McMurray

Abstract: press-pack igbt 150°C. In practice, when such a diode type is used as a freewheeling diode in IGBT switch leg, its , the press-pack IGBT (or GTO thyristors) and the freewheeling diodes needs to be much higher than the , and Dn are main freewheeling diodes, each of which is across a GTO thyristor. A discharge resistor is , or low GTO thyristor to a value of Ed/Ls. In particular, this di/dt limit applies to the discharge of , the dv/dt at GTO thyristor turning-off, thus allowing a reduction in the capacitor size by a factor up
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McMurray press-pack igbt IGBT 5kV IGBT heater control circuit SCHEMATIC POWER SUPPLY WITH IGBTS GTO thyristor driver

150a gto

Abstract: 600 801 1000A, vR = 1500 V (-diF/dt)com 1000 A/µs Höchstzulässige Kommutierungsspannung als GTO Snubberdiode maximum permissible link voltage as GTO snubber-diode iF 150A VR(cr) 3200 V L
Eupec
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600 801

S3901S

Abstract: 1N538 1TR Product Matrix For Horizontal-Deflection Circuits GTO Product Matrix RCA ITR's * F VERSAW T0 220AB ATT Commutating (Retrace) Trace Commutating (Retrace) 't(rms) 8a 8A 8A 'TSM (60 Hz) 100A 100A 100A VnROMlVI 300 400 450 S3902DF 500 S3900E 550 600 S3901M 650 S3903MF , RCA GTO's "â'¢J to-3 M It(dc) 8.5a 8.5a 8.5a ltsm (60 Hz) 50a 50a 50a VdrxmIV) 100 g5001a , '" 70 150*« S 750 -30 to 150 1.4 4 0.5 3.14 25 D2103S 3 - 70 150«* S 700 -30 to 150 1.4 4 0.5 3.14 25
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S3900MF S3901MF S3900S S3901S S3900SF 1N539 1N538 D1201P DO-26
Abstract: on-state current at turn-off Höchstzulässige Kommutierungsspannung als GTO Snubberdiode maximum permissible link voltage as GTO snubber-diode iF 150A L0 250nH snubberless VR(cR) iFM = 1000A, vR = 1500 V (-diF Eupec
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TGS 2600

Abstract: TGS 2600 series , DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which , energy VD = 3000V - 2500 mJ td Delay time IT = 400A, dIT/dt = 150A/µs - 3 , 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Snubber capacitance, CS - (µF) 5.0 4.5 4.0 IT = 150A 3.5 3.0 , 100°C, 750 Vc = 3500V R IT = 300A 3200 3000 2800 2600 IT = 150A 2200 Peak reverse , charge, QS - (µC) IT = 300A 5.5 0.5 0 700 IT = 300A 650 600 IT = 150A 550 500
Dynex
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DGT409BCA DGT409BCA6565 TGS 2600 TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V gto Gate Drive

150a gto

Abstract: fast 1000V 1000A 1000A, vR = 1500 V (-diF/dt)com 1000 A/µs Höchstzulässige Kommutierungsspannung als GTO Snubberdiode maximum permissible link voltage as GTO snubber-diode iF 150A VR(cr) 3200 V L
Eupec
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fast 1000V 1000A

150a gto

Abstract: repetitive decay rate of on-state current at turn-off Höchstzulässige Kommutierungsspannung iF 150A als GTO Snubberdiode L0 250nH maximum permissible link voltage snubberless as GTO
Eupec
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150a gto

Abstract: Höchstzulässige Kommutierungsspannung als GTO Snubberdiode maximum permissible link voltage as GTO snubber-diode iF 150A VR(cr) 2500 V L 250nH snubberless Charakteristische Werte
Eupec
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00365 r

Abstract: eupec T 271 N repetitive decay rate of on-state current at turn-off Höchstzulässige Kommutierungsspannung iF 150A als GTO Snubberdiode L0 250nH maximum permissible link voltage snubberless as GTO
Eupec
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00365 r eupec T 271 N

PIN DIAGRAM OF 80186

Abstract: 8087 coprocessor configuration the requesting device is the 8087, HLDA will be translated into the grant pulse of the RQ/GTO line. If , /GTO of the 8087 Numeric Coprocessor. When initiated by the 8087, RQ/STO will be translated to , connected to the RQ/5T1 line of the 8087. 8086 MODE-In 8086 Mode, RQ/GTl is connected to either RQ/GTO or R5 , n/a n/a 80186 82188 8087 HOLD HLDA HOLD RQ/GTO HLDA SYSHLDA RQ/QT1 SYSHOLD RQ/GTO RQ/6T1 , PR OC HOLD HOLD HLDA HLDA RQ/GTO RQ/GTO
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PIN DIAGRAM OF 80186 8087 coprocessor configuration 80186 82188 timing diagram of 8086 maximum mode 8086 minimum mode and maximum mode
Abstract: +150°C .+300°C 1.5 Thermal Characteristics. Thermal Resistance 0JC = 4 , MIL-STD-750C in still air freely suspended under natural convection conditions. REV. A AN ALO G-TO , ; Vcc = +12 V; VDD â'" +5 V +4.5 V < V DD< +5.5 V; = +12 V; V e e = -12 V REV. A AN ALO G-TO -D , G-TO -D IGITAL C O N V ER T ER S 6-45 AD678 r i SHA -< h w TRACK TRACK | S (- -
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AD678S AD678T ADI-M-1000 MRB20 R1-R26

timing diagram of 8086 maximum mode

Abstract: 80186 , HLDA will be translated into the grant pulse of the RQ/GTO line. If the requesting device is the , strapped to Vcc- RC5/STO 8 I/O Request/Grant O RQ/STO is connected to RQ/GTO of the 8087 Numeric , . 8086 MODE-In 8086 Mode, RQ/GTl is connected to either RQ/GTO or R5/GT1 of the 8086. R5/GT1 will start ,   RC5/ST1 3rd Proc n/a n/a n/a 80186 82188 8087 HOLD HLDA HOLD RQ/GTO HLDA SYSHLDA RQ/QT1 SYSHOLD RQ/GTO RQ/6T1 3h0 PROC HLDA HOLD 231051-3 Figure
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intel 80188 timing diagram of 8086 minimum mode intel 82188 minimum mode configuration of 8086 80188 8087 intel 80186 external memory
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