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150OC

Catalog Datasheet MFG & Type PDF Document Tags

L1N08LE

Abstract: RLP1N08LE : 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified , , like most Power MOSFET devices today, is limited to 150oC. The maximum voltage allowable can , · 1A, 80V · ILIMIT at 150oC = 1.5A Maximum · Built-in Current Limiting · ESD Protected · Controlled Switching Limits EMI and RFI · Specified for 150oC Operation · Related Literature - TB334 , ) Limiting Current VDS = 65V, VGS = 0V VGS = 5V, TC = 150oC rDS(ON) IDS(Lim) Turn-On Time t
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RLP1N08LE L1N08LE TA09842 ISO9000

MCT thyristor

Abstract: MCT harris 3A65P100F2, M Thyristor (MCT) T See MC Features · 35A, -600V · VTM = -1.35V (Max) at I = 35A and +150oC · , Turn-Off Capability at +150oC · Anti-Parallel Diode A A K GR G Description The MCT is an , +150oC with active switching. This device features a discrete anti-parallel diode that shunts current , Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION , = IK115 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V TC = +150oC TC = +25oC TC = +150oC TC =
Harris Semiconductor
Original
MCT thyristor MCT harris THYRISTOR 35A 300V IK25 diode ik 60 MCTV35P60F1D CT3D65 M35P60F1D

SD5000

Abstract: to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC
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SD5000 SD5001 SD5002 SD5400 SD5401 SD5402

MOS Controlled Thyristor

Abstract: MCTV75P60E1 · VTM = -1.3V(Maximum) at I = 75A and +150oC · 2000A Surge Current Capability ANODE CATHODE , Capability at +150oC Description JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled , junction temperatures up to +150oC with active switching. Symbol G A PACKAGING AVAILABILITY PART , (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users , = -600V, VTM mA TC = +25oC - - 100 µA TC = +150oC - - 4 mA TC
Harris Semiconductor
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MCTV75P60E1 MCTA75P60E1 MOS Controlled Thyristor MV75P60E1 MA75P60E1

MOS Controlled Thyristor

Abstract: MCT thyristor -1.3V(Maximum) at I = 75A and +150oC · 2000A Surge Current Capability · 2000A/µs di/dt Capability · MOS Insulated Gate Control · 120A Gate Turn-Off Capability at +150oC Description The MCT is an MOS , common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching , and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge , +25oC VGA = +18V L = 200µH, IK = IK90 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V TC = +150oC TC =
Harris Semiconductor
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3D65P1 100F2

"MOS Controlled Thyristors"

Abstract: MCT thyristor ) Features Package JEDEC STYLE TO-247 · 65A, -1000V · VTM -1.4V at I = 65A and +150oC ANODE , /µs di/dt Capability · MOS Insulated Gate Control · 100A Gate Turn-Off Capability at +150oC , +150oC with active switching. CATHODE (FLANGE) Symbol G PART NUMBER INFORMATION PART NUMBER , ) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to , 3 mA - - 100 µA TC = +150oC - - 4 mA TC = +25oC - - 100
Harris Semiconductor
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MCTV65P100F1 MCTA65P100F1 M65P100F1 MOS-Controlled Thyristor 1000V MCT MCT thyristor 1000v

sumitomo crm epoxy

Abstract: EME G600 +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC · · · · · · · · ·
Calogic
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40X32 sumitomo crm epoxy EME G600 CRM 1076NS SUMITOMO EME G600 sumitomo epoxy 1076 epoxy CRM1076NS SD5000N SD5001N SD5002N XSD5000 XSD5001 XSD5002

SD5000N

Abstract: Calogic Carriers Sorted Chips in Carriers Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC SOIC PIN CONFIGURATION DUAL IN LINE
Calogic
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Calogic SD5000 quad SD5400CY SD5401CY SD5402CY XSD5400 XSD5401 XSD5402

MCT thyristor

Abstract: MCTV75P60E1 +150oC · 2000A Surge Current Capability ANODE CATHODE GATE RETURN GATE · 2000A/µs di/dt Capability · MOS Insulated Gate Control · 120A Gate Turn-Off Capability at +150oC Description JEDEC , +150oC with active switching. Symbol G A PART NUMBER INFORMATION PART NUMBER PACKAGE , Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION , - 100 µA TC = +150oC - - 4 mA TC = +25oC - - 100 µA TC =
Harris Semiconductor
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mct thyristor datasheet MCTV75P6

SD5002

Abstract: SD5400CY in Carriers -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC -55oC to +150oC SO PIN CONFIGURATION DUAL IN LINE PACKAGE S2 1 14 S1 BODY 2 13
Calogic
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calogic sd5000 SD5000/SD5400 SD5001/SD5401 SD5002/SD5402

20N120C3D

Abstract: HGTG20N120C3D moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating , . . . . . . . . . . . . 300ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss Symbol , at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC , µA TC = 150oC Collector to Emitter Breakdown Voltage TEST CONDITIONS - - 2.0 mA TC = 25oC - 2.4 3.0 V TC = 150oC - 2.2 2.9 V 5.0 7.0 7.5 V
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HGTG20N120C3D 20N120C3D LD26 12V 200A Relay TA49155 TA49264

g7n60b3d

Abstract: igbt g7n60b3d much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The , Typical Fall Time. . . . . . . . . . . . . . . . .120ns at TJ = 150oC · Short Circuit Rating · Low , 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6 56 ±20 ±30 35A at 600V A , ICES VCE(SAT) VGE(TH) 600 - - V TC = 25oC - - 100 µA TC = 150oC , 150oC - 1.8 2.1 V - 2.1 2.4 V 3.0 5.1 6.0 V - - ±100 nA
Fairchild Semiconductor
Original
HGTP7N60B3D HGT1S7N60B3DS RHRD660 g7n60b3d igbt g7n60b3d 2MH22 G7N60B3 HGT1S7N60B3DS9A TA49190 TA49057 TA49191

g20n60c3d

Abstract: g20n60c3d equivalent only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in , . . . . . . . . . . . .108ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss · , . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . , CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110 VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V
Fairchild Semiconductor
Original
HGTG20N60C3D RHRP3060 TA49063 g20n60c3d g20n60c3d equivalent HGTG20N60C3 TA49179 G20N60C3D

HGTG40N60B3 equivalent

Abstract: G40N60 moderately between 25oC and 150oC. File Number · 70A, 600V, TC = 25oC · 600V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . .100ns at TJ = 150oC · Short Circuit Rating · , 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V Collector to , IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC - - 6.0 mA - 1.4 , SSOA TJ = 150oC RG = 3 VGE = 15V L = 100µH Gate to Emitter Plateau Voltage On-State Gate
Fairchild Semiconductor
Original
HGTG40N60B3 TA49052 HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 G40N60B3

1N120BND

Abstract: HGT1S1N120BNDS SOA Capability · Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC · Short , Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation , µA - - 1.0 mA TC = 25oC - 2.5 2.9 V TC = 150oC - 3.8 4.3 V , Switching SOA SSOA TJ = 150oC, RG = 82, VGE = 15V, L = 2mH, VCE(PK) = 1200V 6 - - A VGEP Gate to Emitter Plateau Voltage VGE(TH) VCE = BVCES TC = 25oC TC = 150oC ICES
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HGTP1N120BND HGT1S1N120BNDS RHRD4120 1N120BND HGT1S1N120BNDS9A TA49316 TA49056 TA49314

MCT thyristor

Abstract: MOS Controlled Thyristor (Max) at I = 35A and +150oC · 800A Surge Current Capability A · 800A/µs di/dt Capability A K · MOS Insulated Gate Control GR G · 50A Gate Turn-Off Capability at +150oC · , thyristors, and operate at junction temperatures up to +150oC with active switching. This device features a , TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge , CONDITIONS MIN TYP MAX UNITS On-State Voltage VTM TC = +150oC - - 5 mA TC
Harris Semiconductor
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mct 600v TA9789 TA49054

g7n60

Abstract: G7N60B3 much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The , SOA Capability â'¢ Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC â'¢ Short , ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . , mA TC = 25oC - 1.8 2.1 V TC = 150oC Collector to Emitter Saturation Voltage ICES 600 TC = 25oC TC = 150oC Collector to Emitter Leakage Current IC = 250µA, VGE = 0V
Fairchild Semiconductor
Original
g7n60

G30N60B3

Abstract: HGTG30N60B3 moderately between 25oC and 150oC. File Number · 60A, 600V, TC = 25oC · 600V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC · Short Circuit Rating · , . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . , BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 3
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HGTG30N60B3 TA49170 G30N60B3

g12n60

Abstract: HGT1S12N60B3S on-state voltage drop varies only moderately between 25oC and 150oC. File Number · 27A, 600V, TC = , . . . . . . . . . . . . . . 112ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss · , Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA , 250 µA TC = 150oC TC = 25oC TC = 150oC - - 2.0 mA - 1.6 2.1 V , ±20V 4.5 - ±250 nA 96 - - A Switching SOA SSOA TJ = 150oC, RG = 25
Fairchild Semiconductor
Original
HGTP12N60B3 HGT1S12N60B3S G12N60B3 HGT1S12N60B3S9A g12n60 HGTP12N60B3D TA49171

20N60C3R

Abstract: 20n60c3 VCE(ON). This value of EON was obtained with a RURP1560 diode at TJ = 150oC. A different diode or , value at 150oC. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power , Capability · Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns · Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs · Low Conduction Loss Ordering Information PART NUMBER , . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Fig. 12 . . . . . . . . . . . . . .
Intersil
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HGTG20N60C3R HGTP20N60C3R HGT1S20N60C3R HGT1S20N60C3RS 20N60C3R 20n60c3 20n60c n-channel, 75v, 80a hg*20n60 HGT1S20N60C3RS9A TA49047

g20n60c3d

Abstract: g20n60 only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in , 108ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss · Hyperfast Anti-Parallel Diode , 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V Power Dissipation , IC = IC110 VGE = 15V IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 10, VGE = 15V, L = , Corporation TC = 25oC TC = 150oC TC = 25oC TC = 150oC IGBT and Diode at TJ = 25oC ICE = IC110 VCE =
Fairchild Semiconductor
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g20n60 N-CHANNEL 45A TO-247 POWER MOSFET

g30n60b3

Abstract: G30N60 bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC , . . . . . 90ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss The IGBT is ideal for , Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA , 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, RG = 3, VGE = 15V, L = 100µH VGEP QG(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode
Fairchild Semiconductor
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G30N60 IC2560 HGTG30N60B3D DIODE B2

G40N60

Abstract: g40n60b3 igbt voltage drop varies only moderately between 25oC and 150oC. · 600V Switching SOA Capability · Typical Fall Time . . . . . . . . . . . . . . 100ns at TJ = 150oC · Short Circuit Rating · Low Conduction , V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . , µA VCE = BVCES Collector to Emitter Leakage Current TC = 150oC - - 6.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.4 2.0 V TC = 150oC - 1.5 2.3 V
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g40n60b3 igbt g40n60b

G40N60

Abstract: g40n60b3 igbt voltage drop varies only moderately between 25oC and 150oC. · 600V Switching SOA Capability · Typical Fall Time . . . . . . . . . . . . . . 100ns at TJ = 150oC · Short Circuit Rating · Low Conduction , V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . , µA VCE = BVCES Collector to Emitter Leakage Current TC = 150oC - - 6.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.4 2.0 V TC = 150oC - 1.5 2.3 V
Harris Semiconductor
Original
1-800-4-HARRIS
Abstract: bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC , . . . . . . . . 90ns at TJ = 150oC â'¢ Short Circuit Rating â'¢ Low Conduction Loss The IGBT is , . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . , , VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, RG = 3â"¦, VGE = 15V, L = 100µH VGEP QG(ON) td(ON)I trI td(OFF)I tfI Fairchild Semiconductor
Original

G30N60

Abstract: TA49053 on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development , Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC · Short Circuit Rating · Low , TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V Collector , TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 3 , oC/W - - 1.3 oC/W IGBT and Diode at TJ = 150oC, ICE = IC110 , VCE = 0.8 BVCES , VGE
Fairchild Semiconductor
Original
TA49053 TA49172 G30N60B3D HGTG30N60b 200pulse

G7N60B3

Abstract: G7N60 varies only moderately between 25oC and 150oC. File Number Packaging · 600V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . .120ns at TJ = 150oC · Short Circuit Rating , . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . , 3mA, VGE = 0V 15 28 - V TC = 25oC - - 100 µA TC = 150oC TC = 25oC TC = 150oC - - 2.0 mA - 1.8 2.1 V Collector to Emitter Leakage Current ICES
Fairchild Semiconductor
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HGTD7N60B3S HGT1S7N60B3S HGTP7N60B3 G7N60B HGTD7N60B3S9A

1n120cnd

Abstract: 1N120CN Typical EOFF . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC · Short Circuit Rating · Low , . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . , - 20 - µA TC = 150oC ICES TC = 25oC TC = 125oC Collector to Emitter Leakage , 150oC - 2.75 3.2 V 6.0 7.1 - V VGE = ±20V - - ±250 nA SSOA TJ = 150oC, RG = 82 , VGE = 15V, L = 2mH, VCE(PK) = 1200V 6 - - A VGEP IC = 1.0A
Fairchild Semiconductor
Original
HGTP1N120CND HGT1S1N120CNDS 1n120cnd 1N120CN HGT1S1N120CNDS9A TA49317 TA49315 1N120CND

18n120bnd

Abstract: . . . 140ns at T = 150oC J â'¢ Short Circuit Rating â'¢ Low Conduction Loss Packaging , TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V 390 W , 150oC - - 250 μA - 300 - μA - - 4 mA TC = 25oC TC = 150oC - , - A IC = 150μA, VCE = VGE IGES VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = , 55 ns IGBT and Diode at TJ = 150oC ICE = 18A VCE = 960V VGE = 15V RG = 3â"¦ EOFF
Fairchild Semiconductor
Original
18n120bnd HGTG18N120BND TA49304 18N120BND

G3N60B3

Abstract: HGT1S3N60B3S much lower on-state voltage drop varies only moderately between 25oC and 150oC. · 7A, 600V, TC = , . . . . . . . . . . . . . . 115ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss , Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA , 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC VCE = 600V RG = 82 VGE = 15V L = 500µH Gate to Emitter Plateau Voltage On-State Gate
Fairchild Semiconductor
Original
HGTD3N60B3S HGT1S3N60B3S HGTP3N60B3 G3N60B3 HGTD3N60B3S9A RHRD460 TA49192 G3N60B
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