NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 150CVP | Mullard | Quick Reference Guide 1977/78 |
1 pages, |
Scan |  |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: page 1 2 3 4 150CVP sheet 1 2 3 FP date 1960.09.09 1960.09.09 1960.09.09 1999.08.31 ... | Original |
4 pages, |
150CVP 150CVP abstract |
|
|||
| Abstract: but with quartz window for UV applications 32 Caesium antimony 700 1.8 70 10 3.5 150CVP Tube with S1 ... | OCR Scan |
1 pages, |
XP1117 56TVP 150AV XP1016 XP1017 XP1110 XP1116 150CVP 150UVP 56TUVP photomultiplier 56DUVP Photocathode 56AVP caesium XP1110 abstract |
|
|||
| Abstract: PHILIPS 10-STAGE 10-STAGE PHOTOMULTIPLIER'for detection of radiation in the red to infra-red region PHOTOMULTIPLICATEUR À 10 ¿TAGES pour la detection de rayonnement rouge et infra-rouge 10-STUFIGER 10-STUFIGER PHOTO-ELEKTRONENVERVIELFACHER zur Detektion roter und infraroter Strahlung Photocathode: Caesium on oxidized silver; semi-transparent, head-on, with optically flat and parallel surfaces. Cathode photoélectrique:. Cesium sur argent oxydé; semitransparente, du côté supérieur du tute, avec surfaces optiques ... | OCR Scan |
4 pages, |
Semitrans NJC-20 dynode 10-STAGE 150CV 10-STUFIGER 10-STAGE abstract |
|
|||
| Abstract: P-CHANNEL JUNCTION FET CHIP NUMBER .013" (0.330mm) 016" (0.406mm) Die Size: 13 x 16 (müs) 0.330 x 0.406(tnm) 4x6 (mils) Päd Sue- 0.102 x 0 152(mm) GATE-SUBSTRATE CONTACT METALUZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold Silicon preiorm 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS parameter min. typ ma ... | OCR Scan |
2 pages, |
2N3695 2N2606 2N369 2N3378 datasheet abstract |
|
|||
| Abstract: JFbtitran P-CHANNEL JUNCTION FET CHIP NUMBER Devices, Inc. .016" (0.406mra) Die Siza: 13 x 16 (mila) 0.330 x 0.406(mm) 4x6 (mils) Fad Size: 0.102 x 0.152(mm) GATE-SUBSTRATE CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERIS ... | OCR Scan |
2 pages, |
2N3698 2N3695 2N3376 2N2608 2N3378 2N2606 datasheet abstract |
|
|||
| Abstract: Offllüm 2N5114-2N5116 2N5114-2N5116 JAN, JTX P-Channel JFET FEATURES • ON Resistance < 75 ohms (2N5114 2N5114) • 'D(off) ... | OCR Scan |
1 pages, |
T018 2N5116 2N5115 2N5114 2N5114-2N5116 2N5114-2N5116 abstract |
|
|||
| Abstract: DME^DL ITE4091-ITE4093 ITE4091-ITE4093 2N4091-2N4093 2N4091-2N4093, JANTX* N-Channel JFIET FEATURES • rds(on) < 30ohms(2N4091 2N4091) • !D (OFF) < 100 PA (JAN TX Types) • Fast Switching ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperatures - 55 °C to + 200 °C Operating Junction Temperature -5!) to + 175"C Lead Temperature (Soldering, 10 sec) +300°C Maximum Power Dissipation Device Dissipation @ Free Air Temperature 360 mW Linear Derating TO 18 10mW/°C TO 92 16 mW/°C Maximum ... | OCR Scan |
1 pages, |
2N4092 2n4091 2N4093 ITE4091-ITE4093 2N4091-2N4093 2N4091 ITE4091-ITE4093 abstract |
|
|||
| Abstract: SbE » â- M3D2271 M3D2271 0042312 S02 HARRIS SEMICOND SECTOR May 1991 IHAS Features • Ultrafast with Soft Recovery Characteristic (trr < 55ns) • +175°C Rated Junction Temperature â- Reverse Voltage Up to 600V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose Description RUR3040 RUR3040, RUR3050 RUR3050, RUR3060 RUR3060 are ultrafast diodes (trr < 55ns) with soft recovery characteristics (ta/tjj » 1). They have a low forward voltage drop and are of planar, silico ... | OCR Scan |
3 pages, |
RUR3050 RUR3040 power supply 12v 1a RUR3060 M3D2271 M3D2271 abstract |
|
|||
| Abstract: JANTX2N5116 Offllüm 2N5114-2N5116 2N5114-2N5116 JAN, JTX P-Channel JFET FEATURES • ON Resistance < 75 ohms (2N5114 2N5114) • 'D(off) ... | OCR Scan |
2 pages, |
T018 2N5115 2N5114-16 2N5116 2N5114 2N5114-2N5116 2N5114-2N5116 abstract |
|
|||
| Abstract: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features â•- Low VCE (on) Non Punch Through IGBT Technology. â•- 10â•¡s Short Circuit Capability. â•- Square RBSOA. â•- Positive VCE (on) Temperature Coefficient. â•- Lead-Free. IC = 7.0A, TC=100â-'C G tsc > 10â•¡s, TJ=150â-'C E n-channel Benefits VCE(on) typ. = 1.8V â•- Benchmark Efficiency for Motor Control. â•- Rugged Transient Performance. â•- Low EMI. â•- Excellent Current ... | Original |
3 pages, |
IRGSL6B60K IRGS6B60K IRGB6B60K C-150 400v 50A Transistor datasheet abstract |
|
|||