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BAT15099RE6327HTSA1 Infineon Technologies AG Mixer Diode, visit Digikey Buy

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Part : BAT 15-099R E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.1946 Price Each : $0.2280
Part : BAT15099RE6327HTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.2609 Price Each : $0.2959
Part : BAT15-099R Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 14,761 Best Price : $0.20 Price Each : $0.20
Part : M83421/01-5099R Supplier : CRC Industries Europe Manufacturer : Bristol Electronics Stock : 65 Best Price : $31.8456 Price Each : $36.00
Part : BAT15099RE6327HTSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 1,787 Best Price : $0.4524 Price Each : $0.4524
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15-099R

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 15-099R â'¢ Low barrier diode for double bale need mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) |x| SOT-143 Values Unit / Q62702-A0043 t Package1 ) Symbol BAT 15-099R S6 Pin Configuration , â  SIEMENS BAT 15-099R Electrical Characteristics per Diode at 7a = 25 'C, unless -
OCR Scan
01203M3

A4 marking diode

Abstract: sot-143 s6s BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 · Low barrier diode for double , 15-099R S6s Pin Configuration Package 1=A1/C4 2=C2/A3 3=C1/A2 4=C3/A4 SOT-143 Maximum , on alumina 15mm x 16.7mm x 0.7mm 1 Oct-07-1999 BAT 15-099R Electrical Characteristics at , *; TS) TA = Parameter * Package mounted on alumina 10 2 F BAT 15-099R EHD07077 140 EHD07078 F mA mA 10 1 100 TA = -40 °C 25 °C 85 °C 125 °C 10 BAT 15-099R 80
Infineon Technologies
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VPS05178 A4 marking diode sot-143 s6s 4C3 diode diode marking a4 EHA07012

S6 diode

Abstract: diode S6 Silicon Crossover Ring Quad Schottky Diode q BAT 15-099R Low barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BAT 15-099R S6 Pin Configuration Q62702-A0043 Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values , . Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 15-099R
Siemens
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S6 diode diode S6 SCHOTTKY DIODE SOT-143
Abstract: SIEMENS Silicon Crossover Ring Quad Schottky Diode · Low barrier diode for double balanced mixers, phase detectors and modulators BAT 15-099R ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Q62702-A0043 Pin Configuration BAT 15-099R S6 íxí t 2 EHA07012 Package1) SOT-143 Maximum Ratings per Diode Parameter , Characteristics per Diode at 7a = 25 'C, unless otherwise specified. BAT 15-099R Parameter Symbol min -
OCR Scan

4C3 diode

Abstract: Schottky Diode Marking C3 IF F BAT 15-099R 70 10 0 60 50 40 10 -1 30 20 10 10 -2 0.0
Infineon Technologies
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Schottky Diode Marking C3 diode MARKING A3

VPS05178

Abstract: A4 marking diode BAT 15-099R 70 10 0 60 50 40 10 -1 30 20 10 10 -2 0.0 0.5 0 0 V
Infineon Technologies
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780 AC A2 diode diode a3 esd diode a2 marking c2 diode C4 marking diode

Bat 16-046

Abstract: 15-099R (Quad) at 1-° 1.0
-
OCR Scan
Bat 16-046 14-099R BAL99

bat15

Abstract: 4 VR Forward current IF = (VF) TA = Parameter 10 2 BAT 15-099R EHD07077 Forward current
Infineon Technologies
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bat15 BAT15 BAT15-02LRH BAT15-02V BAT15-03W BAT15-04W BAT15-05W

BAT15

Abstract: 4 VR Forward current IF = (VF) TA = Parameter 10 2 BAT 15-099R EHD07077 Forward current
Infineon Technologies
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BAT15-099 BAT15-099LRH BAT15-07LRH BAT-098LRH BAT15-098LRH

bat15-04w

Abstract: Parameter 10 2 BAT 15-099R EHD07077 Forward current IF = (T S) BAT15-02LRH, BAT15-07LRH BAT15
Infineon Technologies
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S11-P EHD07083

bat15

Abstract: BAT15-02V 4 VR Forward current IF = (VF) TA = Parameter 10 2 BAT 15-099R EHD07077 Forward current
Infineon Technologies
Original

BAT15-04W

Abstract: BAT15 10 1 90 TA = -40 °C 25 °C 85 °C 125 °C 10 80 IF F BAT 15-099R Forward
Infineon Technologies
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BAT15-02L SC79 BAT15-02L/V

Diode mark 1445

Abstract: Parameter 10 2 BAT 15-099R EHD07077 Forward current IF = (T S) BAT15-02LRH, BAT15-07LRH BAT15
Infineon Technologies
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Diode mark 1445

BAT15

Abstract: BAT15-02LRH 85 °C 125 °C 10 80 IF F BAT 15-099R 0 70 60 50 40 10 -1 30 20 10 10
Infineon Technologies
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Abstract: Parameter 10 2 BAT 15-099R EHD07077 Forward current IF = (T S) BAT15-02LRH, BAT15-07LRH BAT15 Infineon Technologies
Original

BAT15-02LRH

Abstract: BAT15-04W mA 100 10 1 90 TA = -40 °C 25 °C 85 °C 125 °C 10 80 IF F BAT 15-099R 70
Infineon Technologies
Original

PMB2251

Abstract: smd schottky diode s6 97 solutions (e.g. BAT 15-099R), the CMY 91 and CMY 210 integrated GaAs MMICs can be implemented easily for
Siemens
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PMB2251 smd schottky diode s6 97 startac CF739 dect pmb CLY 2
Abstract: 80 IF ΙF BAT 15-099R 70 0 60 50 40 10 -1 30 20 10 10 -2 0.0 Infineon Technologies
Original

BAT15

Abstract: BAT15-03W mA 100 10 1 90 TA = -40 °C 25 °C 85 °C 125 °C 10 80 IF F BAT 15-099R 0
Infineon Technologies
Original
RF schottky diode

c639

Abstract: c33840 14-099R BAT 15-03W BAT 15-099 BAT 15-099R BAT 17 BAT 17-04 SOT-23 SOT-323 SOT-23 SOT-323 SOT , 15-099 BBY 52 BAT 15-099R BAT 114-099 BBY 53 BAT 14-099R BAT 14-099 BB 804 BB 814 BB 914 BB 545
Siemens
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c639 c33840 transistor C639 c33725 c877 C63716 OD-323
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