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Part Manufacturer Description Datasheet BUY
IXTQ14N60P IXYS Corporation Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN visit Digikey Buy
IXTP14N60PM IXYS Corporation Power Field-Effect Transistor, 7A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN visit Digikey Buy
IXFH14N60P IXYS Corporation Power Field-Effect Transistor, 14A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN visit Digikey Buy
IXFA14N60P3 IXYS Corporation Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN visit Digikey Buy
IXFP14N60P3 IXYS Corporation Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 visit Digikey Buy
IXFH14N60P3 IXYS Corporation Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN visit Digikey Buy

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Part : IXFA14N60P Supplier : IXYS Manufacturer : Future Electronics Stock : - Best Price : $2.01 Price Each : $2.65
Part : IXTA14N60P Supplier : IXYS Manufacturer : Future Electronics Stock : - Best Price : $1.88 Price Each : $2.27
Part : IXTP14N60P Supplier : IXYS Manufacturer : Future Electronics Stock : - Best Price : $1.75 Price Each : $2.12
Part : IXFA14N60P Supplier : IXYS Manufacturer : Bristol Electronics Stock : 144 Best Price : - Price Each : -
Part : IXFH14N60P Supplier : IXYS Manufacturer : RS Components Stock : 52 Best Price : £1.55 Price Each : £1.95
Part : IXFH14N60P3 Supplier : IXYS Manufacturer : RS Components Stock : 82 Best Price : £1.7250 Price Each : £2.33
Part : IXFP14N60P3 Supplier : IXYS Manufacturer : RS Components Stock : 155 Best Price : £1.3960 Price Each : £1.6920
Part : IXFP14N60P Supplier : IXYS Manufacturer : Farnell element14 Stock : 67 Best Price : £1.35 Price Each : £2.74
Part : IXTP14N60P Supplier : IXYS Manufacturer : New Advantage Stock : 500 Best Price : $2.34 Price Each : $2.49
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14N60P

Catalog Datasheet MFG & Type PDF Document Tags

14n60p

Abstract: PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 14N60P IXTP 14N60P IXTQ 14N60P VDSS ID25 RDS(on) = 600 V = 14 A 550 m Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS , Space savings High power density © 2006 IXYS All rights reserved DS99329E(03/06) IXTA 14N60P IXTP 14N60P IXTQ 14N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise , ,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTA 14N60P
IXYS
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14n60P

Abstract: 14n60 ADVANCE TECHNICAL INFORMATION IXFA 14N60P IXFP 14N60P IXFH 14N60P PolarHVTM HiPerFET , ) rated Low package inductance - easy to drive and to protect m DS99329(02/05) IXFA 14N60P IXFP 14N60P IXFH 14N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless , Drain IXFA 14N60P IXFP 14N60P IXFH 14N60P Fig. 1. Output Characteristics Fig. 2. Extended , 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFA 14N60P IXFP 14N60P
IXYS
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14n60
Abstract: ADVANCE TECHNICAL INFORMATION IXTA 14N60P IXTP 14N60P IXTQ 14N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 14 A 550 m RDS(on) N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25 , drive and to protect m DS99329(02/05) IXTA 14N60P Symbol gfs Test Conditions , S 2200 IXTP 14N60P IXTQ 14N60P ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr IXYS
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14n60P

Abstract: 14n60 PolarHVTM HiPerFET Power MOSFET IXFA 14N60P IXFH 14N60P IXFP 14N60P VDSS = 600 V ID25 = , (02/06) IXFA 14N60P IXFH 14N60P IXFP 14N60P Symbol Test Conditions Characteristic Values , 6,759,692 6,771,478 B2 2 - Drain IXFA 14N60P IXFP 14N60P IXFH 14N60P Fig. 1. Output , IXFA 14N60P IXFH 14N60P IXFP 14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 , 1000 IXFA 14N60P IXFP 14N60P IXFH 14N60P Fig. 13. Maximum Transient Thermal Resistance R (th
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14n60

Abstract: 14N60P 200 ns IXFC 14N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast , (low EMI) l m DS99409E(02/06) IXFC 14N60P Symbol Test Conditions Characteristic , ,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 14N60P Fig. 1. Output , 150 IXFC 14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 45 24 40 , IXFC 14N60P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 10.00 1.00
IXYS
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IXYS DS ISOPLUS220TM E153432 02-27-06-C

14n60

Abstract: ADVANCE TECHNICAL INFORMATION IXFC 14N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 , µA 620 Easy to mount Space savings High power density m DS99409(06/05) IXFC 14N60P , ,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFC 14N60P Fig. 1 , 125 150 IXFC 14N60P Fig. 8. Transconductance Fig. 7. Input Adm ittance 40 30 35 , conditions, and dimensions. 10 100 V D S - Volts 1000 IXFC 14N60P Fig. 13. Maximum Transient
IXYS
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14n60

Abstract: ixfa14n60 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_14N60P(5J , Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08
IXYS
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ixfa14n60 12-22-08-G

14n60

Abstract: 50 75 100 125 150 TJ - Degrees Centigrade IXYS REF: F_14N60P(5J)12-22-08 , CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08-G IXYS
IXYS
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IXTP14N60PM
Abstract: 150 TJ - Degrees Centigrade IXYS REF: T_14N60P(5J)12-22-08-G IXFC14N60P Fig. 8 , reserved IXYS REF: T_14N60P(5J)12-22-08-G IXYS IXYS
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220TM

IXFC14N60P

Abstract: 14n60 Centigrade IXYS REF: T_14N60P(5J)12-22-08-G IXFC14N60P Fig. 8. Transconductance Fig. 7. Input , - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_14N60P(5J)12-22-08
IXYS
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T14n

14n60

Abstract: 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET Degrees Centigrade IXYS REF: F_14N60P(5J)12-22-08-G IXTA14N60P IXTP14N60P IXTQ14N60P Fig. 8 , 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P
IXYS
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600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

IXFP14N60P

Abstract: IXFA14N60P 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_14N60P(5J , Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08
IXYS
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122208

IXTP14N60PM

Abstract: 14n60 150 TJ - Degrees Centigrade IXYS REF: F_14N60P(5J)12-22-08-G IXTP14N60PM Fig. 8 , 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P
IXYS
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7A 27
Abstract: 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_14N60P(5J , Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08-G IXYS IXYS
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STW20N60

Abstract: 2n60p )5N60P IXT(1)7N60P IXT(1)10N60P IXTP10N60PM IXT(1)14N60P IXT(1)18N60P(2) IXT(1)22N60P(2) IXT(1 , IXFN100N50P IXF(1)10N60P IXF(1)14N60P IXFC14N60P IXF(1)18N60P(2) IXFC22N60P IXF(1)22N60P(2) IXF(1 , )5N60P IXT(1)7N60P IXT(1)10N60P IXTP10N60PM IXT(1)14N60P IXT(1)18N60P(2) IXT(1)22N60P(2) IXT(1 , IXFN100N50P IXF(1)10N60P IXF(1)14N60P IXFC14N60P IXF(1)18N60P(2) IXFC22N60P IXF(1)22N60P(2) IXF(1 , )5N60P IXT(1)7N60P IXT(1)10N60P IXTP10N60PM IXT(1)14N60P IXT(1)18N60P(2) IXT(1)22N60P(2) IXT(1
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110N055P STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 IXTQ150N06P IXTQ200N06P 75N10P 110N10P 140N10P

2n60p

Abstract: gsm based speed control of single phase induction motor 8 1.8 Y, P, A IXF(1)14N60P 600 14 0.55 40 0.42 P, A, H IXT(1)4N60P , (2) 600 26 0.27 72 0.27 V,H, T IXT(1)14N60P 600 14 0.55 40 0.42
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30N60P gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system MWI15 MWI60 1200V MUBW10 MUBW35 MUBW15
Abstract: IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_14N60P (5J IXYS
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DS99738E 8-21-06E

7N60B equivalent

Abstract: 18N50 equivalent 12N50P IXTP 12N50PM IXTP 14N60P Ø IXTP 14N60PM IXTP 16N50P Ø IXTP 16N50PM Ø IXTP 18N60PM Ø IXTP , 7N100P IXFA 7N80P IXFA 10N60P IXFA 10N80P IXFA 12N50P IXFA 14N60P IXFA 16N50P Ø IXFB 30N120P , IXFB 82N60P IXFB 100N50P IXFC 10N80P IXFC 12N80P IXFC 14N60P IXFC 14N80P IXFC 16N50P IXFC 16N80P , 12N90Q IXFH 14N100Q2 IXFH 14N60P IXFH 14N80P Ø IXFH 15N100P IXFH 15N100Q IXFH 15N80Q Ø IXFH , 12N50PM IXFP 14N60P IXFP 16N50P IXFQ 10N80P IXFQ 12N80P IXFQ 14N80P IXFR 4N100Q Ø IXFR 12N100P
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7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor MO-153 MS-013 MS-012 5M-1994 MO-229

14N60P3

Abstract: IXFH14N60P3 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N60P3(K4
IXYS
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IXFA14N60P3
Abstract: 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_14N60P3 IXYS
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