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Part : MW-1403GD136174PTR Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $4.3798 Price Each : $6.3089
Part : 1361747 Supplier : CommScope Manufacturer : Newark element14 Stock : - Best Price : $403.00 Price Each : $495.1100
Part : LPA136174-6NF Supplier : PCTEL Broadband Technology Manufacturer : Richardson RFPD Stock : - Best Price : $595.00 Price Each : $595.00
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136-174MH

Catalog Datasheet MFG & Type PDF Document Tags

Fuji-SVEA

Abstract: transistor RF 2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. BEC WINTransceiver Features: High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: 4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC =
Fuji-SVEA
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Fuji-SVEA transistor RF 136-174MH 175MH

RA60H1317M1

Abstract: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A BLOCK DIAGRAM 2 3 RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate , , T>45% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 136-174MHz · Low-Power Control , Storage Temperature Range CONDITIONS VGG
Mitsubishi
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RA60H1317M1 174-MH RA60H1317M1A-201
Abstract: RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp , '¢ Broadband Frequency Range: 136-174MHz â'¢ Low-Power Control Current GG=1mA (typ) at VGG=5V I â'¢ Module , Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO , V Pin Input Power 100 mW 80 W -30 to +100 ° C -40 to +110 ° C f=136-174MHz , Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25°C, Z G=ZL Mitsubishi
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B818

Abstract: MACP-010121-B8180X E-Series RF 20dB Coupler 136-174MHz Rev. V2 Schematic Features Typical 19dB Coupling Surface Mount Tape and reel packaging available 260° Reflow Compatible C , -010121-B8180X E-Series RF 20dB Coupler 136-174MHz Rev. V2 Electrical Specifications: TA = 25° Z0 = 50 C , -010121-B8180X E-Series RF 20dB Coupler 136-174MHz Rev. V2 Typical Performance Curves at +25° C Directivity , -010121-B8180X E-Series RF 20dB Coupler 136-174MHz Rev. V2 Tape & Reel Information Item Dimension Ao
M/A-COM
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B818 SM-55B

49mhz transmitter and receiver

Abstract: reactance modulator 136-174MHz range or citizen band of 27/49MHz. Applications of this system are in large farm-house, hospital
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OCR Scan
ANHK02 49mhz transmitter and receiver reactance modulator 49MHz FM transmitter 49mhz remote control receiver circuit motorola application notes mc3361 POWER LINE FM INTERCOM AN-JHK-02/H MC2831A AN-HK-02/H

RA60H1317M1

Abstract: FET 4900 >60W @136-174MHz, Vdd=12.5V)] Test Conditions are; C=100pF, R=1.5K, 3 times for one Voltage, E
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RA03M8087M RA13H1317M RA35H1516M RA30H4452M FET 4900 mitsubishi rf 175mhz 12.5v 40w RA30H1317M AN-GEN-026-E RA30H4452M/ RA13H8891MB RA13H1317M/ RA30H1317M/ RA35H1516M/

RA60H1317M1

Abstract: C100pF Mitsubishi RF Power Module RA* series AN-GEN-026-G [Type number: RA60H1317M1 (Po>60W @136-174MHz, Vdd
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RA07H4452M C100pF RA13H3340M 4500 MOS mitsubishi rf power module RA07H3340M RA03M8087M/ RA13H3340M/ RA13H4047M/ RA13H4452M/ RA07H3340M/ RA07H4047M/

E5052A

Abstract: Z-Communications 's datasheet (for example, if the frequency range stated on the datasheet is 136-174MHz, type in 155) and
Z-Communications
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AN-109 E5052A Z-Communications 3 phase soft start fixture IS-136

MRF660

Abstract: MRF485 136-174MHz 136-174MHz 2SC1678 2SC1728 2SC1729 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1957 2SC1966 , 220MHz 175 MHz 175 MHz 174MHz 174 MHz 136-174MHz 174MHz 2007-11-01 19:50 ButtFuzz' BiPolar , 136-174MHz 136-174MHz 136-174MHz 136-174MHz 440MHz 30-200MHz 100-500 MHz 30-200MHz 30-200MHz
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2N5026 MRF477 MRF479 MRF485 MRF496 MRF531 MRF660 KTC1969 MRF150MP 2SC2029B 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733

RA60H1317M1

Abstract: RA60H1317M1A MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to , =12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 136-174MHz · Low-Power Control Current IGG=1mA (typ , Pout Output Power f=136-174MHz, ZG=ZL=50 100 80 W Operation Case Temperature Range
Mitsubishi
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RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE 136-174MHz mosfet marking code gg DD1002 RD 15 mitsubishi
Abstract: RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp , : 136-174MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 67 x 19.4 x 9.9 mm RoHS , :Apr.2011 1 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V , PARAMETER VDD VGG Pin Pout Drain Voltage Gate Voltage Input Power f=136-174MHz, Output Power ZG=ZL=50 80 -30 , .2011 2 < Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Mitsubishi
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Abstract: AND VSWR CHARTS Azimuth Plot at 154MHz Elevation Plot at 154MHz VSWR Plot at 136-174MHz Laird Technologies
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B1360W BB1360W B1360WS BB1360WS ANT-DS-B1360W

TB246

Abstract: April 1, 2015 A 5 TB246 T Frequenc cy=136-174MHz Pout=100W Ga ain=14dB Vds s=12.5Vdc c Id dq=0.8A Effic ciency=63% % SR726 PH:(8 805)484-4210 FAX:(805)484-3393 8 1110 Avenida Acas Camarillo C 93012 so, CA ww ww.polyfet.com m April 1, 2015 TB246 Pout/Gain vs Pin: Freq = 136MHz, Vds = 12.5Vdc, Idq = 0.8A 90.0 16.0 60.0 15.0 30.0 14.0 0.0 Pout (W) 17.0 13.0 0 1 2 3 Pin (W) PH:(805)484-4210 FAX:(805)484-3393 1110
Polyfet RF Devices
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136MH 150MH 174MH 1111N 1111X 18AWG

136-174MHz

Abstract: ra60h1317m1a-101 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in , =12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 136-174MHz · Low-Power Control Current IGG=1mA (typ , =0mW 5.5 V Pin Input Power mW Pout Output Power f=136-174MHz, ZG=ZL=50 100 80
Mitsubishi
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ra60h1317m1a-101 174MHZ

tic 136

Abstract: 10NF =400ma TB 178 136-174Mhz 7W RF out Polyfet RF Devices
Polyfet RF Devices
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470PF L8821P tic 136 10NF 47UF 200PF 136-174M

RA60H1317M1

Abstract: RA60H1317M1A-201 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to , =12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 136-174MHz · Low-Power Control Current IGG=1mA (typ , 80 f=136-174MHz, ZG=ZL=50 W -30 to +100 °C -40 to +110 °C MIN TYP MAX
Mitsubishi
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RA60H1317M1A201 RA60H13 mitsubishi electric 174-MHz

RA60H1317M1A

Abstract: RA60H1317M1 MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to , Range: 136-174MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 67 x 18 x 9.9 mm , V Pin Input Power mW Pout Output Power f=136-174MHz, ZG=ZL=50 100 80 W
Mitsubishi
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RF MODULE RA60H1317M1A rf transistor mar 8 MAR 601 transistor marking code transistor ND MITSUBISHI marking example F1361

LK141

Abstract: ) 136-174MHz (Commercial ground comms) 160-230MHz (TV VHF III) 30-512MHz (Military: Jammer, Ground/Air comms
Polyfet RF Devices
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LK141 ISO9000 GP041 GP141 GX141 GX241 GX341

RA80H1415M1

Abstract: < Silicon RF Power Modules > RA80H1415M1 RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V , =0V) â'¢ Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW â'¢ Broadband Frequency Range: 136-174MHz â'¢ Low-Power Control Current IGG=1mA (typ) at VGG=5V â , , 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25°C, unless otherwise , -30 to +100 °C -40 to +110 °C Pout f=136-174MHz, Output Power ZG=ZL
Mitsubishi
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144-148MH 148-MH RA80H1415M1-201

RA60H1317M1

Abstract: RA30H1317M Module RA-series AN-GEN-026-H [Type number: RA60H1317M1 (Po>60W @136-174MHz, Vdd=12.5V)] Test
Mitsubishi
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RA03 RA07H4047M RA13H4047M RA13H4452M ericsson+RBS+6000+series+INSTALLATION+MANUAL RA35H1516 135-175MH 154-162MH 440-520MH