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1334+diode

Catalog Datasheet MFG & Type PDF Document Tags

ADP1047-300-EVALZ

Abstract: Analog Devices switch (Q1) and diode (D2). The gate signal for the boost switch comes from the ADP1047 through the , GBU DIODE HYPERFAST 600V 8A DIODE STD REC 800V 8A SMD IC RECT BRIDGE 0.5A 600V MBS-1 DNI RECT , SUPPER RED CLEAR 75mA 1.7V SMD RECT PASSIVATD 1A 1000V SMD DIODE SWITCH 100V 150MA DIODE ULTRA FAST SW 200V 1A DIODE ULTRA FAST SW 200V 1A DNI DIODE SWITCH 100V 150MA DNI DNI HOLDER PC FUSE 5mm LOW , C15 DNI C16 DNI D1 DIODE SWITCH 100V 150MA Micro Commercial 1N4148WTPMSCT
Analog Devices
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ADP1047-300-EVALZ Analog Devices DIODE 1334 smd diode 1334 DIODE+1334+smd 1334 diode 2000/XP/V EVAL-ADP1047

DIODE 1334

Abstract: 1334 diode will also introduce HiPerFET versions in which the trr of the body diode is reduced to make them
IXYS
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200N10P-88 100N25P 96N20 36N30P equivalent 88N30 36N30 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S
Abstract: BIPOLAR AMPLIFIERS OPTIONS FOR BIPOLAR AMPLIFIERS INPUT BIAS TEE Add Suffix â'-Fâ' Used to inject bias signal to photo diode or other type of device. To order, add -F after model number. The bias connector is normally type SMA female. Check for availability on your model before ordering. Available on most units operating above 1 MHz. RF OUTPUT RF INPUT BIAS INPUT +V POWER SUPPLY BIAS THROUGH THE OUTPUT CONNECTOR Add Suffix â'-1306/Eâ' or â'-1306/Dâ' Used to supply operating Miteq
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AU-2A0150-1306/E AU-2A0150-N
Abstract: BIPOLAR AMPLIFIERS OPTIONS FOR BIPOLAR AMPLIFIERS INPUT BIAS TEE Add Suffix â'-Fâ' Used to inject bias signal to photo diode or other type of device. To order, add -F after model number. The bias connector is normally type SMA female. Check for availability on your model before ordering. Available on most units operating above 1 MHz. RF OUTPUT RF INPUT BIAS INPUT +V POWER SUPPLY BIAS THROUGH THE OUTPUT CONNECTOR Add Suffix â'-1306/Eâ' or â'-1306/Dâ' Used to supply operating Miteq
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AU-2A-0150-BNC AU-2A-0150-1179

ISL9208

Abstract: SMV-R005 R35 CFET 1M ~2.5mA D7 LED J16 BAT1 R32 R33 0 0 R36 100 R43 0 D4 DIODE , DIODE HEADER 5 D5 4.7V R47 4.7K 1 J32 DFET C 3 2 1 R40 511 J35 1 1 2 , GND DIODE WKUP invert GND 1 C WKUP Non-invert GND .01uF/50V CB7 20 18 16 14 12 10 8 6 4 2 R23 68.1k 1 C7 J11 CB7 CB6 CB5 CB4 CB3 CB2 CB1 DIODE D8 , , J42, J8, J43 JP_3 34 4 DIODE D1, D2, D3, D4 SOD-123 Digikey: B0540WDICT-ND 35
Intersil
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ISL9208 AN1334 SMV-R005 J26-J27 MC9S08Q ISOTEK smv-r005-1.0 ISL9208EVAL1

HAT0

Abstract: mc1658 _ 3.1 4.5 - _ - 1 G erm anium diode (0.4 drop) forw ard biased from 11 to 14 ( 1 1 - w - 14). 2 Germ anium diode (0.4 drop) forw ard biased from 14 to 11 ( 1 1 - H - 1 4 ) . O utput
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HAT0 mc1658 MC1658 16-LE
Abstract: Compensation for Output Diode n Output Short-Circuit Protection n Thermally Enhanced 8-Lead SO Package , the output diode temperature coefficient. 8302f For more information www.linear.com/LT8302 7 , two external resistors. An optional TC resistor provides easy output diode temperature compensation , current through the output diode falls to zero, the SW pin voltage collapses and rings around VIN. A , : VFLBK = (VOUT + VF + ISEC â'¢ ESR) â'¢ NPS VF = Output diode forward voltage ISEC = Transformer Linear Technology
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LT8302 42VIN 100VIN TSOT23 LT8309 LT3573/LT3574

potter and brumfield khs

Abstract: KHS-17D13-24 ) .660 (16.76) + = Polarity for LED indicator or diode suppression if ordered special. Siemens
Potter & Brumfield
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potter and brumfield khs KHS-17D13-24 KHS-17D12-24 KHS-17D11-24 khs 313 siemens relay 12vdc 4pdt E22575 LR15734 120VDC 240VAC 27E166 27E894
Abstract: 53ö33c m 000D75fc, 83 0 â  BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A V 7 4 - A5 Pin , at Ir = 1 mA Vr Vrrm I frm Ti max. max. max. max. vF trr RATINGS (per diode) (at , RESISTANCE From junction to ambient* CHARACTERISTICS (per diode) = 25 °C unless otherwise specified , ; measured at I r = 1 mA Diode capacitance V r = 0; f = 1 MHz max. 500 K/W T am b VF 1 V  -
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000D75

diode 1334

Abstract: 1334 diode Passivated Die Electrical Characteristics Maximum DC output current Maximum Surge Current per diode Max l2t for fusing Max peak forward voltage per diode Max peak reverse current per diode Minimum isolation
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KBPC3067 KBPC3027 VK227 KBPC3047 VK247 VK267 Diode 1754 PC3027

diode 1334

Abstract: G 1754 diode Maximum Surge Current per diode Max l2t for fusing Max peak forward voltage per diode Max peak reverse current per diode Minimum isolation voltage I o 30 Amps I FSM 250 Amps I FSM 260 A2S VFM 1.2V @ 30 Amps I
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G 1754 diode 00VDC

schematic diagram induction heater

Abstract: TRANSISTOR 1FU INPUT BIAS TEE Add Suffix "-F" Used to inject bias signal to photo diode or other type of device. Check
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schematic diagram induction heater TRANSISTOR 1FU klixon 63-4 3 hp 1500 rpm a.c. induction motor winding data transformer dash 2 b-5 3 TERMINAL 1838 ir sensor

schematic diagram 415VAC to 24VDC POWER SUPPLY

Abstract: wiring diagram, variable speed drives DUAL POWER SCHOTTKY RECTIFIERS 30 Amp Pk per diode, 45V SD241 FEATURES â'¢ Very Low Forward Voltage â'¢ Low Recovered Charge â'¢ Rugged Packaged Design (TO-3) â'¢ High Efficiency for Low Voltage Supplies â'¢ Dual Schottky Rectifiers in a Single Package DESCRIPTION The SD241 has two Schottky barrier juntions arranged in a common cathode configuration and is ideally suited for output rectifiers and catch diodes in low voltage supplies. ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Per Diode Working Peak Reverse
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schematic diagram 415VAC to 24VDC POWER SUPPLY wiring diagram, variable speed drives 3 phase transformer 415vac 1838 ir remote sensor ac induction motor direct torque control using fu 3 phase inverter schematic diagram for 10Hp motor T3-10 800T-3TW60 800T-4TW64

DIODE 206 1334

Abstract: Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 , current DC collector current Drain current Forward current of diode Maximum average forward current at , resistance junction to case Slope resistance of a thyristor or diode (for power loss calculations) Case , junction temperature Reverse recovery time of a diode Collector-emitter saturation voltage Maximum , voltage Forward voltage of diode Reverse voltage Maximum peak reverse voltage of thyristor or diode
Miteq
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DIODE 206 1334 AM-1645

1334 diode

Abstract: diode 1334 Suffix "-F" Used to inject bias signal to photo diode or other type of device. Check for availability on
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861-654U

IXTD08N100P-1A

Abstract: IXTQ22N60P interference â'¢ Isolation voltage rating of 1500Vrms for 1min. â'¢ Embedded bootstrap diode in the package , 5V, ID = 1A - 1.9 2.4 W VSD Drain-Source Diode Forward Voltage V CC = VBS = 15V , mA - - 2 mA Bootstrap Diode Part Symbol VRRM Parameter Conditions IF , °C - 80 - ns Built in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A , 12 13 14 15 VF [V] Note: Built in bootstrap diode includes around 15 resistance
IXYS
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IXTD08N100P-1A IXTQ22N60P DWS20-200A IXFH20N80P IXFK180N15P IXFH24N80P

AU-1310

Abstract: 322 135 Diode Amplifier interference · Isolation voltage rating of 1500Vrms for 1min. · Embedded bootstrap diode in the package , = 5V, ID = 1A - 1.9 2.4 W VSD Drain-Source Diode Forward Voltage V CC = VBS = , IN and COM Applied between IN and COM Bootstrap Diode Part Symbol VRRM Parameter , Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns Built in Bootstrap Diode VF-IF , diode includes around 15 resistance characteristic. Figure 2. Built in Bootstrap Diode
Miteq
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AU-1310 322 135 Diode Amplifier AU-1534
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