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LDC1314QRGHRQ1 Texas Instruments 4-channel, AEC-Q100 qualified, 12-bit Inductance-to-Digital Converter with I<sup>2</sup>C for Inductive Sensing 16-WQFN -40 to 125 visit Texas Instruments Buy
LDC1314RGHT Texas Instruments 4-channel, 12-bit Inductance-to-Digital Converter with I<sup>2</sup>C for Inductive Sensing 16-WQFN -40 to 125 visit Texas Instruments Buy
LDC1314RGHR Texas Instruments 4-channel, 12-bit Inductance-to-Digital Converter with I<sup>2</sup>C for Inductive Sensing 16-WQFN -40 to 125 visit Texas Instruments Buy
LDC1314QRGHTQ1 Texas Instruments 4-channel, AEC-Q100 qualified, 12-bit Inductance-to-Digital Converter with I<sup>2</sup>C for Inductive Sensing 16-WQFN -40 to 125 visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil

1314 MARKING DIODE

Catalog Datasheet MFG & Type PDF Document Tags

Y33-Y34

Abstract: moteur a courant continu signalétique. La présence de la tension d'alimentation est signalée par la diode luminescente A1/A2 dans le , .2 3 Y34 Y33/4 Repérage des bornes / Terminal marking / Klemmenanzeiger A1 13 21 Z1 , sont activés et ferment la sortie libre de potentiel entre les bornes 13-14. Parallèlement, la sortie , plus de la diode luminescente du signal cumulé «Zero speed Ch.1+Ch.2", la sortie statique entre le , mis en marche, les relais internes K1 et K2 retombent immédiatement, ouvrent la sortie 13-14 et
Telemecanique
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Y33-Y34 Y43-Y44 moteur a courant continu dahlander-schaltung 300v dc 230v DC motor speed controllers XPS-vn star delta connection LOGIC wiring circuit diagram 1800VA/180VA

1314 MARKING DIODE

Abstract: shutdown the ESD protection system of the SCL and SDA pins does not use a diode connected to VDD , C28 C27 C26 C25 C24 C23 C22 C21 C20 C19 x 252 48 -156 -360 -564 -786 -1032 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1314 -1032 -786 -564 -360 -156 48 252 498 702 906 1110 1314 1314 1314 1314 1314 y VSO56 2142 2142 2142 2142 2142 2142 2142 2142 1920 1716 1512 708 504 , C8 C7 C6 C5 C4 C3 C2 C1 C0 n.c. x 1314 1314 1314 1314 1314 1314 1314 1314 1314 1314 1314 1314 1314
Philips Semiconductors
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1314 MARKING DIODE PCF8579 PCF8579T PCF8579HBD PCF8579TD PCF8579TD-T PCF8579U/10

microswitch crouzet 83181

Abstract: crouzet 83181 Fast diode V R > 5 x V nominal I nominal > 10 x I winding C B - RC circuit across inductance C
Crouzet
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microswitch crouzet 83181 crouzet 83181 microswitch crouzet crouzet 83186 CF 02 94Vo relay crouzet 88 861

xps-cep

Abstract: detecteur infrarouge Ou sed 23-24 clo 13-14 / Outputs en 23-24 op Y33 Repérage des bornes Terminal marking , lumineuses situées dans le couvercle du dispositif, la diode électroluminescente (DEL) verte ,A1/A2 Fuse" et la DEL rouge ,Outputs 13-14/23-24 open" s'allument dans la mesure où il n'y a pas de , sorties de sécurité libres de potentiel sont mises sous tension et la DEL verte ,Outputs 13-14/23-24 , Outputs 13-14 / 23-24 closed Outputs 13-14 / 23-24 open Une interruption du champ de protection
Telemecanique
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S18PP340 S18NP340 xps-cep detecteur infrarouge IEC 60947-5-1 schneider IEC 292-1 TEST1116

smd marking m11

Abstract: A77 smd Avalanche Energy © 4.3 mJ dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns Tj, Tstg Junction and Storage , Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current (Body Diode) - - 5.6 MOSFET symbol showing the A ¡77 integral reverse GAJ p-n junction diode. D h ISM Pulsed Source Current (Body Diode) © - - 18 / s vsd Diode Forward Voltage â'" â'" 2.5 V Tj=25°C, ls=5.6A, VGs=0V © trr ,
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OCR Scan
IRL510S SMD-220 smd marking m11 A77 smd
Abstract: Energy @ Avalanche Current © Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® Junction , Characteristics Is Ism VsD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) © Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge , '" ; k ) integral reverse G pH\ S p-n junction diode. Tj=25°C, ls=5.6A, VQ =0V © S Tj=25°C, lF , =5.6A (See Figure 12) © Pulse width < 300 ps; duty cycle -
OCR Scan

Schmersal AZM 160

Abstract: Schmersal IEC 947-5-1 voltage. The increased voltage is conducted through the zener diode, i.e. the electrical circuit in the , . To separate the electric circuits, a zener diode or galvanic isolators are used. The EN 60079-11 , prescribes no uniform procedure and only points out that for the marking preferably a light blue colour , colour. In order to avoid confusion, another marking should be used for the intrinsically safe electric , speeds higher than 1 m/s, electrostatic problem for belt transmissions. Marking ·Basic requirement
Elan Schaltelemente
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Schmersal AZM 160 Schmersal IEC 947-5-1 16b2 zener diode IEC 60947-5-1 limit switch ex d THERMAL Fuse m20 tf 115 c Schmersal AZM 160 22 D-42279 D-42232 D-35435 D-35429

xps-CM

Abstract: telemecanique D range contactors diode électroluminescente (DEL) verte ,A1/A2 Fuse" et la DEL rouge ,Outputs 13-14/23-24 open , requir /A2-Fu 1 ­ A1 command -24 closed rt 2 ­ Sta ts 13-14/23-24 open tpu 3 ­ Ou ts 13-14/23 tpu , Y3 fault se ed lt requir /A2-Fu 1 ­ A1 command -24 closed Muting fau rt 2 ­ Sta ts 13-14/23-24 open tpu 3 ­ Ou ts 13-14/23 B 14 tpu 4 ­ Ou MA M Z2 Y64 4 Y54 Y34 Y4 U+ U­ A2 UV T2 , connexions T3-Z2 du produit XPS-CM. Si le champ de protection est libre, la diode lumineuse jaune ,Start
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xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique contactors telemecanique limit switch Telemecanique VO
Abstract: Capacitance Crss Reverse Transfer Capacitance ns - 1314 - - 120 - - , Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward , 1.40 B G 5.50 D UNIT:mm 1.27 LAND PATTERN RECOMMENDATION MARKING MILLIMETERS TXC
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MA4204S10000000 MA4204S D061009
Abstract: Transfer Capacitance ns - 1314 - - 120 - - VDS=15V , VGS=0V , f , =25V , L=0.1mH , IAS=20A Diode Characteristics Symbol IS Parameter Conditions 1,6 Continuous Source Current 2,6 ISM Pulsed Source Current VSD Diode Forward Voltage2 VG=VD=0V , Force , 1.40 B G 5.50 D UNIT:mm 1.27 LAND PATTERN RECOMMENDATION MARKING MILLIMETERS TXC
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MA4004S10000000 MA4004S
Abstract: .13-14 Triple Level , .43 Indicator/Marking Tags & Warning Marking , for interconnection to distribute potentials within terminal block assemblies. Marking Tags make DIN , marking system includes standard or custom imprinted snap-on tags in a variety of sizes for circuit Altech
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MOSFET smd marking kl

Abstract: 1ER2 Current © 5.6 A Ear Repetitive Avalanche Energy © 4.3 mJ dv/dt Peak Diode Recovery dv/dt © 5.5 V , Diode} s â'" â'" 5.6 A MOSFET symbol showing the / J§ 0 Ism Pulsed Source Current (Body Diode) © â'" â'" 18 integral reverse GÃ' p-n junction diode. y s Vsd Diode Forward Voltage â'" â'" 2.5 v tj , , Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage a c (B ZJ O c o 103 5 2 10s 10 , Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit -
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OCR Scan
IRL510 MOSFET smd marking kl 1ER2 5210s arej AN-994

AME1084DCC

Abstract: K 1603 to-220 Dropout Positive Voltage Regulator AME1084 n Ordering Information Part Number Marking Output , n Ordering Information (contd.) Part Number Marking Output Voltage Package Operating , VIN V IN AME1084 V OUT GND 10µF 10µF 1K 10µF Note: * Zener diode or voltage reference * VO = VREF + VZ (V Z: breakdown voltage of Zener diode) * Optional for improved ripple rejection Regulator with Reverse Diode Protection * VIN VIN AME1084 VOUT VO GND
Analog Microelectronics
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AME1084DCC K 1603 to-220 AME1084ACBT AME1084CCCS 9346 diode AME1084DCBT 1012-DS1084-E

RD16MWB

Abstract: RD10MW Zener Diode RD2.0MWRD39MW 200 mW - mm RD2.4MW RD9.1MW 200 mW - 2.8 ± 0.2 0.65 ­0.15 2 3 1 E24 2 +0.1 +0.1 1.5 0.4 ­0.05 EIAJSC-59 2.9 ± 0.2 0.95 3 0.95 +0.1 0.4 ­0.05 IC +0.1 1.1 1.4 0.16 ­0.06 0.3 Marking 0 0.1 1. : K1 2. : K2 3. : A SC-59 (EIAJ) K2 2 K1 1 T A = , 0.70 5 RD12MW B 12.09 13.47 5 0.70 5 RD13MW B 13.14 14.83 5
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RD39MW RD20MW RD15MW RD10MW RD16MWB RD11MW RD16MW RD18MW D10247JJ5V0DS00 RD24MW

RD6.8MW

Abstract: zener rd9.1esb2 Zener Diode RD2.0MWRD39MW 200 mW - mm RD2.4MW RD9.1MW 200 mW - 2.8 ± 0.2 0.65 ­0.15 , Marking 0 0.1 1. : K1 2. : K2 3. : A SC-59 (EIAJ) K2 2 K1 1 T A = , 0.70 5 RD12MW B 12.09 13.47 5 0.70 5 RD13MW B 13.14 14.83 5
NEC
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RD6.8MW zener rd9.1esb2 RD68MW 1N 407 Diode iza marking

1314 MARKING DIODE

Abstract: conclusion of zener diode voltage report Sheet 8-12 Marking & Packing Standard 13-14 Reliability Report 15-16 Soldering , positive or negative ESD current 5 4 to either the positive or negative rail. A zener diode is , ESD current is SC-70-6 steered to the ground through an ESD diode and Zener diode and the , ; ORDERING INFORMATION Part No. LRC099-04BT1G Package SC-70-6 Marking C96 Material Shipping , .11112461 RELIABILITY REPORT Device: Type: Polarity: Device Marking: Sample Size: Package: Assy Site: ESD
Leshan Radio Company
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conclusion of zener diode voltage report 1000T J-STD-020B
Abstract: Freewheeling and ORâ'ing Diodes Reverse Battery Protection Instrumentation 2 3 MARKING DIAGRAM , Rectified Forward Current (Rated VR, TC = 116°C) (Rated VR, TC = 136°C) Per device Per diode Peak , = 133°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load , 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 ON Semiconductor
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NTSV30H100ECT 220AB TSV30H10EG NTSV30H100ECT/D

TXC Corporation

Abstract: Fall Time - 2.2 - Ciss Input Capacitance - 1314 - Coss Output , Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode , RECOMMENDATION 2.55 1.30 MARKING MILLIMETERS SYMBOLS INCHES MIN XX X X X X X XX XX X
TXC
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TXC Corporation MA4004D10000000 FMT-DOC024 D020210
Abstract: -3 AME1085DCDT-3Z AME1085ACDT AME1085ACDTZ AME1085DCDT AME1085DCDTZ 4 Marking* AME1085 ACBT , AME1085AMCT* AME1085AMCTZ* AME1085MCT* AME1085MCTZ* Marking* AME1085 AMCT yyww AME1085 , : * * VO = VREF + VZ (V Z: breakdown voltage of Zener diode) * Optional for improved ripple rejection Regulator with Reverse Diode Protection * V IN IN AME1085 VOUT OUT VO GND 10µF , 157.7 0.000 4.381 8.761 13.14 17.52 21.90 26.28 30.67 35.05 39.43 43.81 48.19 52.57 Analog Microelectronics
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1013-DS1085-J
Abstract: AME1085DCDT AME1085DCDTZ AME1085ACGTZ Marking* AME1085 ACBT yyww AME1085 ACBT yyww AME1085 DCBT , * AME1085MCT* AME1085MCTZ* Marking* AME1085 AMCT yyww AME1085 AMCT yyww AME1085 MCT yyww , : * VO = VREF + VZ (VZ: breakdown voltage of Zener diode) * Optional for improved ripple rejection Regulator with Reverse Diode Protection * V IN IN AME1085 VOUT OUT VO GND 10µF , 144.9 149.2 153.4 157.7 0.000 4.381 8.761 13.14 17.52 21.90 26.28 30.67 35.05 39.43 Analog Microelectronics
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1013-DS1085-N
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