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Part : HMTSW-130-09-L-Q-225 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $3.6835 Price Each : $6.2602
Part : HMTSW-130-09-L-S-240 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $1.7848 Price Each : $2.6016
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Part : HTSW-130-09-L-D Supplier : Samtec Manufacturer : Newark element14 Stock : 100 Best Price : $3.22 Price Each : $6.89
Part : HTSW-130-09-L-T Supplier : Samtec Manufacturer : Newark element14 Stock : 100 Best Price : $5.02 Price Each : $9.04
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Part : KSE13009LTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,418 Best Price : $0.32 Price Each : $0.40
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Part : 69913-009LF Supplier : Amphenol Manufacturer : Chip1Stop Stock : 6 Best Price : $6.40 Price Each : $6.40
Part : HTSW-130-09-L-D Supplier : Samtec Manufacturer : Farnell element14 Stock : - Best Price : £2.65 Price Each : £4.97
Part : HTSW-130-09-L-T Supplier : Samtec Manufacturer : Farnell element14 Stock : - Best Price : £4.66 Price Each : £8.70
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Part : TSW-130-09-L-S Supplier : Samtec Manufacturer : Farnell element14 Stock : - Best Price : £1.23 Price Each : £2.12
Part : TSW-130-09-L-T Supplier : Samtec Manufacturer : Farnell element14 Stock : - Best Price : £4.29 Price Each : £9.08
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13009 L

Catalog Datasheet MFG & Type PDF Document Tags

transistor E 13009

Abstract: 13009 H (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , A 15 VCE = 5 V 31 26 Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 , L = 200 uH 110 ns see Figure 9 IC = 5 A Inductive load ts IB1 = - IB2 = 1.6 A Storage time tf VCC = 125 V Fall time L = 200 uH see Figure 9 tc = 125 °C 2.3 us
STMicroelectronics
Original
transistor E 13009 13009 H p 13009 transistor d 13009 13009 L all transistor 13009

transistor E 13009 l

Abstract: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , 60 L = 200 ÂuH Fall time V V VCE = 5 V IC = 5 A Inductive load V V V V 1.2 1.6 IB = 1.6 A Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 1.25 2.5 IB = , A Storage time tf VCC = 125 V Fall time L = 200 ÂuH tc = 125 °C 2.3 Âus
STMicroelectronics
Original
transistor E 13009 l

transistor E 13009

Abstract: 13009 H (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , Group L Group H IC = 8 A _ _ IC = 5 A Inductive load uA uA 400 IC = 5 A Base-emitter , -2 A 1.6 2.5 us 60 L = 200 uH 110 ns see Figure 9 Inductive load ts Storage time tf Fall time IC = 5 A VCC = 125 V IB1 = - IB2 = 1.6 A L = 200 uH tc = 125
STMicroelectronics
Original
e 13009 f ST-13009 E 13009 L 13009L transistor 13009 13009 TRANSISTOR equivalent

E 13009 2

Abstract: EB 13009 D 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V , , motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 , AflER PHILIPS/D IS CRETE MJE 13008 MJE 13009 V SSE D bbS3T31 001^133 3 â  T-33-13 RATINGS , . 13009 600 300 700 V 400 V max. 9.0 â'¢V ICsat >C !CM max. max. 8.0 12 24
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OCR Scan
E 13009 2 EB 13009 D D 13009 K EB 13009 transistor mje 13009 S3T31

transistor E 13009

Abstract: transistor d 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C CURRENT Q A IN fc(A}, C O L L E C T O R C U R R E N T lc(A), C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME Cos(pF), CAPACITAN CE V r-'iW C O L L E C T O R B A S E V
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OCR Scan
13009 TRANSISTOR e13009 E 13009 13009 NPN Transistor power switching transistor 13009 E 13009 TRANSISTOR KSE13008/13009 KSE13009

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , '¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800 , cut-off current I I-Z Ul S a. O _J ui > Ul a 5SE D â  bbS3T31 001^13^ 5 â  MJE 13008 MJE 13009
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OCR Scan
J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR J 13009 transistor j 13009 53T31 T0-220

SR 13009

Abstract: E 13009 ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , 1Junction case Test Conditions j i Symbol R th J C Value 1.25 Unit K/W 164 Rev. D l , VCb = 10 V; IE = 0; f = 1 MHz V cE sat VBEsal h pE hFE f? C cbo MHz pF I Rev. D l
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OCR Scan
SR 13009 transistor sr 13009 13009 K 13009T BR 13009 D 13008 K TE13008 TE13009

transistor E 13009

Abstract: D 13009 K KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for , Vcc= 125V, le = 8A s~ C D 4 b > > PI II 593 ELECTRONICS KSE13008/13009 DC , VOLTAGE h FE, D C CURRENT G A IN lr.(A>, C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME C 0 B(p P )t CA P A C ITA N C E V .« (V X C O L L E C T O R B A S E V O L T A G E lc
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OCR Scan
transistor b 595 13009 power transistor transistor switch 13009 transistor f 3009 E13008

e 13009 d

Abstract: transistor E 13009 NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 â , 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , CURRENT GAIN 0.1 0.2 0.5 1 2 5 10 20 50 100 lc(A), C O L L E C T O R C U , 1 2 5 10 20 50 100 200 500 1000 Vrn iV), C O L L E C T O R B A SE V O L T A G E lc(A), C O L L E C T O R C U R R E N T SAFE OPERATING AREA ts, tfOiS), TURN OFF
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OCR Scan
e 13009 d

831-1360

Abstract: PM20-24S05 Output Dimensions EACH Stock Mfr.'s Input Dimensions Stock Mfr.'s Input No. Type Volts (DC) L ¥ W ¥ H (In.) No. Type Volts (DC) L W ¥ V A W 1-4 5-24 V A W ¥ H (In.) 1-4 5-24 831-1200 PM10-12S03 9 to 18 , Input Output Dimensions Stock Mfr.'s Input Output Dimensions No. Type Volts (DC) L ¥ W ¥ H (In.) No. V A W 1-4 5-24 Type Volts (DC) L ¥ W V A W ¥ H (In.) 1-4 5-24 831-8851 PAH50S48-3.3/V 48 3.3 , 130.09 126.42 831-8856 PAH50S48-5/V 48 5.0 10.0 50.00 2.4 ¥ 2.28 ¥ 0.5 92.29 89.69 831-9366 PAH100S48-5/V
Allied Electronics Catalog
Original
831-1360 PM20-24S05 PM20-24S15 PM20-12S03 PM30-24S15 PM30-12S03 PM10-24 PAH50S48-15/V

D 13009 K

Abstract: p 13009 -1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 A 4.0 5.0 6.5 7.0 8.0 , B J±0.1 (0.2) K±0.1 (A) BFPC L±0.05 R0 0.3±0.05 E 3.3MIN( ) 2 , -1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 , 17.9 21.9 L 02.5 03.5 05.0 05.5 06.5 07.5 10.0 10.5 13.5 14.5 15.5 16.5 20.5 103 , -1302-4- CL580-1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26
Hirose Electric
Original
DC100V 5mm-12mm OZ63-201C-50-9 FH3305 40S05SH 201C FH330 AC50V AC150V 1055H UL94V-0

e 13009 f

Abstract: E 13009 L 0.084 2.03 2.13 H 0.372 0.378 9.45 9.60 n bl u n L M M H SOT-227 Microsemi Catalog Repetive , FAX: (480) 947-1503 www.microsemi. com 1-30-09 Rev. 3 SSPB100060 SSPB1001 20 Figure 1 Typical , - Amperes 1-30-09 Rev. 3
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OCR Scan
SSPB100120 2500VDC

mj 13003

Abstract: transistor MJ 13009 TO-220 MJE13009 STI-13009 700* 6 8.0 TO-220 875 Dm MAX L .250 ,I35_ MAX - SEATING PLANE â ?'2 .225. .205 I,I" L DIA12 LEADS) DIA (2 HOLES aar. MAX TO-220 OUTLINE NOTE: *BVCEV ai B
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OCR Scan
MJE13000 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 MJ410 STI-410 MJ411 STI-411 MJ413

DC power jack SWC

Abstract: SWC DC power jack M J U b! L F 1-30-09 ECN 51752 TOLERANCE UNLESS OTHERWISE SPECIFIED DECIMALS .XX - .XXX mm MATL
-
OCR Scan
DC power jack SWC SWC DC power jack mil-std-1344 MIL-C-28901 MIL-STD-1344
Abstract: ERIN G INFORM ATION XX-0517-90C N o . o f p in s (1 -2 5 ) A ll o i m l n s i o n s : i n < urs |m il l i m c t t r s l J I1 : C o lle t c o n t a c t s S e r ie s D i s p l a y a n g le NORTH AMERICA E L E C T R O N I C S . IN C. http://www.arieselec.com â , 65 FAX: +31 78 615 43 11 Papendrecht, Holland 13009 REV.A -
OCR Scan
94-HB QQ-B-626 MIL-G45204 QQ-N-290 QQ-C-533 MIL-G-45204

13009 silicon

Abstract: 13009 TRANSISTOR rZ Z S G S -T H O M S O N * 7# » © i» !© TM « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls , 400 1 1.5 3 V cE (sa l)* le = 5 A le = 8 A le = 12 A le = 8 A Tcase - 100°C le = 5 A le = 8 A , V V V V V 2 Ib = 1 A Ib = 1.6 A Ib = 1.6 A I I | i ^ l i VBE(sat)* Base-Emitter
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OCR Scan
13009 silicon MJE-13009 transistor MJE13009 T 13009

442uH

Abstract: 800uH ADSL LINE TRANSFORMER l SCHEMATICS DAEP13006 DAEP13007 DAEP13008/13009 DAEP13010/13011 , DAEP SERIES ADSL LINE TRANSFORMERS MECHANICALS l FEATURE EXCELLENT THD PERFORMANCE IN A SMALL FOOTPRINT. l APPLICATIONS FOR USE WITH ADSL CHIPSET CONSTRUCTION THD ADSL l , ADSL EP13 001 3 PART NUMBER l SPECIFICATIONS PART NO DAEP13001 DAEP13002 DAEP13003 , :// www.productwell.com DAEP SERIES ADSL LINE TRANSFORMER l SPECIFICATIONS PART NO DAEP13005 DAEP13006
Productwell Precision Elect.
Original
442uH 800uH 407uH 20323MH transformer turn ratio 15 DAEP13004 100KH DAEP13008 DAEP13015 DAEP13016 300KH
Abstract: L ENTI RE DO NOT L I N E S I N D I C A T I N G E V E R Y LI VE C A V I T I E S E X C E P T EN D CAVI TI ES, S T A R T I N G EROM . 4 9 5 MAX [1 2 . 5 7 ] & APVD B E R Y L L I U M C O P P E R ( b E c U ) OR C O P P E R -N IC K E L -S IL IC O N (CuNiSi). C ON T AC T EI NI SH: . 0 0 0 0 5 0 GOLD IN T I N - L E A D ON S O L D E R TAILS, OVER D D N W 21SEP09 REV , 240 I 240 1-447208-0 M55302/130-09 240 I 240 447208-9 M55302/130-08 1 60 -
OCR Scan
M55302/130-10 M55302/130-09 M55302/130-07 M55302/130-06 M55302/130-05 M55302/130-04

D 13009 K

Abstract: 13006D 13004 ý 3006 ý 13006 ý 13006D ý 3006D ý 13009 Stack Hgt. "X" & "Y" (max.) .750 (19.05) .750 (19.05 , non-turn mounting is required. (Special order). * Add suffix "L" to part number if locking type is required
Switchcraft
Original
P10531 T10711 3036D 13036D 3033T 13033T
Abstract: FREQ. RANGE (MHz) Outline Drawing ISOLATION (dB) L Typ. Min. fL-fU 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 PHASE UNBALANCE (Degrees) L Typ. Max. M Typ. Max. 0.6 1.0 0.9 1.5 L M U Max. Max. Max. U Typ. Max. AMPLITUDE UNBALANCE (dB) L M U Max. Max , 11235-0003 (718) 934-4500 sales@minicircuits.com REV. A M127604 ZBSC-8-82+ ED-13009/2 HY/TD/AM 100615 Mini-Circuits
Original
UU1268 ZBSC-8-82-S ED-13009/2
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