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LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

13009 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

transistor E 13009

Abstract: transistor d 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C , KSE13008/13009 POWER DERATING NPN SILICON TRANSISTOR 0 25 50 75 100 125 150 175 , Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC
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transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L KSE13008/13009 KSE13009

transistor E 13009

Abstract: all transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 Emitter Base , KSE13008/13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , /13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or
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all transistor 13009 e 13009 f transistor EN 13009 D 13009 13009 2 transistor EN 13009

all transistor 13009

Abstract: transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 , , Duty cycle2% Rev. B ©1999 Fairchild Semiconductor Corporation µs µs µs KSE13008/13009 NPN SILICON TRANSISTOR KSE13008/13009 NPN SILICON TRANSISTOR TRADEMARKS The following are
Fairchild Semiconductor
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13009 13009 TRANSISTOR equivalent transistor switch 13009 npn 13009 13009 H 13009 NPN Transistor

transistor E 13009

Abstract: D 13009 K ), TURN OFF TIME 594 ELECTRONICS KSE13008/13009 POW ER DERATING NPN SILICON TRANSISTOR , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic , Vcc= 125V, le = 8A s~ C D 4 b > > PI II 593 ELECTRONICS KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAQE CO LLECTO R EMITTER SATURATION
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E13009 transistor b 595 J 13009 - 2 E 13009 2 transistor j 13009 p 13009

e13009

Abstract: transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic , « , % ^^^^^^^^^^^^^ Rev. B FAIRCHILD SEMICONDUCTOR â"¢ ©1999 Fairchild Semiconductor Corporation KSE13008/13009 NPN SILICON TRANSISTOR OC CURRENT GAIN BASE EMITTER SATURATION VOLTAGE COLLECTOR EMITTER SATURATION
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power switching transistor 13009 13009* transistor 13009 power transistor NPN Transistor 13009 E13009 F Fairchild e13009

e 13009 d

Abstract: transistor E 13009 NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 â'¢ High Speed Switching â'¢ Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM , 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN SILICON TRANSISTOR POWER DERATING 160 140 d is s ip a t io n 120 100 P d
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e 13009 d transistor E 13009 l

*E13009F

Abstract: all transistor 13009 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , . A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Package Demensions TO , Rev. H2 Product Folder - Fairchild P/N KSE13009F - NPN Silicon Transistor Fairchild
Fairchild Semiconductor
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KSE13009FTU tr 13009 cross reference 13009 13009 applications kse13009 h2 PW300

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , transistor in a T0-220 envelope, intended for use in switching regulators, inverters, motor controls , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , '¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800
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transistor MJE 13009 13008 TRANSISTOR E 13009 J 13009 13009 K 13009 l 53T31

E 13009 2

Abstract: e 13009 l specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V , passivated npn power transistor in a TO-220 envelope, intended fo r use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 , AflER PHILIPS/D IS CRETE MJE 13008 MJE 13009 V SSE D bbS3T31 001^133 3 â  T-33-13 RATINGS , . 13009 600 300 700 V 400 V max. 9.0 â'¢V ICsat >C !CM max. max. 8.0 12 24
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EB 13009 D EB 13009 transistor mje 13009 to-3p E 13005 L S3T31

SR 13009

Abstract: E 13009 TE13008 · TE13009 Tem ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features · · · · · HIGH SPEED technology High reverse voltage Power dissipation Pu,| = 100 W , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5
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SR 13009 transistor sr 13009 13009T BR 13009 D 13008 K

transistor 13009

Abstract: kse13009 h2 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , . A1, January 2001 KSE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/13009 Package Demensions TO , Home >> Find products >> KSE13008 NPN Silicon Transistor Contents Features | Applications | Product
Fairchild Semiconductor
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KSE13009H2 KSE13009H2TU KSE13009TU

mj 13003

Abstract: transistor MJ 13009  lajor Source for G\9Piy High Voltage Power Transistors in TO-3 and T0-220 Case Outline Semiconductor Technology, Inc., in an effort to enhance the most complete High Voltage Transistor product line in the industry, is complimenting the High Voltage Transistor product line with High Voltage Power Transistors in the TO-3 & T0-220 case outline, that are direct replacements for the MJ and MJE13000 series , TO-220 MJE13009 STI-13009 700* 6 8.0 TO-220 875 Dm MAX L .250 ,I35_ MAX - SEATING PLANE â
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mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 mj 13007 MJ410 STI-410 MJ411 STI-411 MJ413 STI-413

ST-13002

Abstract: mje 340 transistor TO-220 ST-13008 MJE-13008 100 600 300 600 1.0 6.0 8.0 1.5 1.6 8.0 180 4.0 TO-220 ST-13009 MJE-13009 , 2.5 10 350 10 TO-218 'DARLINGTON TRANSISTOR "PNP 26 'SPEED UP DIODE_ SEMICONDUCTOR TECHNOLOGY QBE
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ST-13002 MJE-13002 ST-13009 mje 340 transistor transistor mje 13003 transistor d 13007 ST13003 STH11 GDDD533 ST44TE5 D44TE5 ST-12007 MJE-12007

PC 13003 TRANSISTOR

Abstract: 13009 PNP Transistor Package Series MOSFETs TIP42C Plastic-Encapsulate Bipolar Transistor Transistors/IC Plastic-Encapsulate Bipolar Transistor TIP42C China made-high quality and stock in warehouse! SCR Rectifiers Transistor(pair) BVcbo Part Number BVceo Icb ã'' HFE Vec(sat) Pc (mW) Ic (mA) (V , -220 Ib(Ma) Throught Hole Type Bipolar Transistor TIP31C 3000 100 100 NPN BCE 10 , 400 NPN BCE 8 40 - - 1 - - 4 TO-220 13009 3000 12 700
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PC 13003 TRANSISTOR 13009 PNP Transistor 13007 TRANSISTOR 13007* transistor transistor std 13007 NPN Transistor Pair TIP32C TIP41C TIP120 TIP121 TIP122 TIP127

PC 13003 TRANSISTOR

Abstract: TO126 13003 TRANSISTOR Package Series MOSFETs TIP42C Plastic-Encapsulate Bipolar Transistor Transistors/IC Plastic-Encapsulate Bipolar Transistor TIP42C China made-high quality and stock in warehouse! SCR Rectifiers Transistor(pair) BVcbo Part Number BVceo Icb ã'' HFE Vec(sat) Pc (mW) Ic (mA) (V , -220 Ib(Ma) Throught Hole Type Bipolar Transistor TIP31C 3000 100 100 NPN BCE 10 , 400 NPN BCE 8 40 - - 1 - - 4 TO-220 13009 3000 12 700
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TO126 13003 TRANSISTOR BU406A

transistor 13009

Abstract: transistor E 13009 NPN SILICON TRANSISTOR 13009 4 100mm D423AG-00 240±20µm 4230×4230µm 2 1200×420µm 2 1140×540µm 2 B E KSE13009HE13009 Ta=25 TO-220 Tstg -. -65~150 Tj-. 150 PC -T c=25. 100W VCBO-. 700V VCEO-. 400V IC-DC
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transistor E 13009 2 d423a T 13009 HE13009 MA1040 12AIB 10VIC 125VIC

13009 silicon

Abstract: 13009 TRANSISTOR rZ Z S G S -T H O M S O N * 7# » © i» !© TM « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. TO-220 INTERNAL SCHEMATIC DIAGRAM CO (2) 5C C 69 , Saturation Voltage 1.2 1.6 1.5 8 6 i DC Current Gain Transistor Frequency Output Capacitance 40
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13009 silicon MJE-13009 transistor MJE13009

transistor E 13009

Abstract: transistor d 13009 TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 £ | T~ * 1 - Z 3 «Transistors Small Signal Transistor T ype No. TO-92 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 2N4402 2N4403 2N5400 2N540I 2N5550 2NSS51 M PS2222 M PS2222A M PS2907 MPS2907A M PSA13 M , 150 -1 5 0 -1 5 0 100 100 30 30 -3 0 -3 0 Medium Power Transistor T ype No. NPN M JE I3 0 0 4 M JE I3 0 0 5 M JE I3 0 0 6 M JE 13007 M JE 13008 M J E 13009 T IP 2 9 /A /B /C T IP 3 1 /A /B /C T I P 4
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13007 2 transistor 13007 m jE 13007 transistor E 13007 power transistor npn to-220 E 13009 TRANSISTOR PSA14 PSA42 PSA43 PSA92 PSA93 YTS2222

transistor E 13009

Abstract: 13009 H ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is
STMicroelectronics
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13009L

transistor E 13009 l

Abstract: ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic parameters I High voltage capability I Minimum lot-to-lot spread for reliable operation I Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is
STMicroelectronics
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