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13001 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

13001 TRANSISTOR

Abstract: transistor 13001 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package , 13001 A B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 , 1.5 µs D 25-30 E 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F 8 , G 331 Flat Side of Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions
Continental Device India
Original
13001 TRANSISTOR transistor 13001 transistor x 13001 13001 transistor 400v 13001 npn c s x 13001 H 06 C-120 CD13001R 080102E

13001 TRANSISTOR

Abstract: transistor x 13001 SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta , =50mA, IB1= -1B2=5mA VCC=45V A 10-15 CD 13001 A TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 10 5 , 1.5 D 25-30 E 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F Page 1 of 3 , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack P2 DISTANCE BETWEEN OUTER LEADS COMPONENT
Continental Device India
Original
transistor c s x 13001 13001 TO-92 transistor TO-92 13001 transistors 13001 13001 power transistor all transistor 13001

13001 TRANSISTOR

Abstract: transistor x 13001 PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta =25ºC , =10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V A 10-15 CD 13001 A B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 MAX UNIT V V V 100 , 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F 8 Page 1 of 3 CD13001 TO , Flat Side of Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless
Continental Device India
Original
transistor s 13001 c s 13001 TRANSISTOR 13001 A 13001 TO 92 transistor 13001 TO 92 transistor 13001 B ISO/TS16949

13001 TRANSISTOR

Abstract: transistor 13001 SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta , IC=50mA, IB=10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V A 10-15 CD 13001 A B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 MAX , µs D 25-30 E 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F 8 Page 1 , G 331 Flat Side of Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions
Continental Device India
Original
NPN transistor 13001 13001 13001 transistor TO-92

13001 TRANSISTOR

Abstract: 13001 npn ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage VCBO 500 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V , company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 29/08/2008 ST 13001
Semtech Electronics
Original
ST 13001 13001 TRANSISTOR equivalent st 13001 TRANSISTOR npn 13001 13001 npn transistor High Voltage 13001

si 13001 transistor

Abstract: transistor x 13002 7. ( C f t jg T 't 'o The BA13001, BA13001F, BA13002 and BA13002F are large current transistor arrays with 6 Darlington transistor circuits built-in. The necessary surge absor bing diodes and base , ) i ' 7 > 7 ,ÿ ' ï i - K®1OE K it- ;* (T a = 2 5 °C ) Pd B A 13001 1100 X 2 B A 13002 mW S , ,0mW S -¡1*1*« 0 306 ROHm BA13001/B A 13001 F/ BA13002/ BA13002F · f t Ü K f í ^# , /BA13001F/BA13002/BA13002F · iiJ J É x - * B A 13001 DUTY CYCLE ( % ) DUTY CYCLE ( % ) Fig
-
OCR Scan
13002F si 13001 transistor transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF BA13001/F BA13002/F BA13001/BA13001F/BA13002/BA13002F BA13001/BA13001F

13001 TRANSISTOR equivalent

Abstract: 13001 TRANSISTOR SRA2210S Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , Dimensions unit : mm · Equivalent Circuit 2.4±0.1 1.30±0.1 C(OUT) 3 2.9±0.1 1.90 Typ , Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical
AUK
Original
KSR-2030-000 transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit IC 2030 PIN CONNECTIONS

13001 TRANSISTOR equivalent

Abstract: KSR-3032-000 SRA2211UF Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , 0.70-0.15 R1 R1 = 10K 0~0.1 0.11±0.05 2.0±0.1 1.30 BSC 1.30±0.1 2 mm E(COMMON , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
KSR-3032-000 SRA2211U KSR-3032

13001 TRANSISTOR equivalent

Abstract: 13001 TRANSISTOR SRC1211S Semiconductor NPN Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , Dimensions unit : mm · Equivalent Circuit 2.4±0.1 1.30±0.1 C(OUT) 3 2.9±0.1 1.90 Typ , Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical
AUK
Original
KSR-2023-001

13001 TRANSISTOR equivalent

Abstract: 13001 TRANSISTOR SRC1210U Semiconductor NPN Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , ) 0.30±0.1 2 R1 R1 = 4.7K E(COMMON) 0~0.1 1.30±0.1 0.90±0.1 2.0±0.2 1 0.1 Min , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
k 2101 equivalent 3025 13001 NPN equivalent KSR-3025-000

sot 23 marking code rad

Abstract: 13001 TRANSISTOR SRA2211S Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , Dimensions unit : mm Equivalent Circuit 2.4±0.1 1.30±0.1 C(OUT) 3 2.9±0.1 1.90 Typ , fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical
AUK
Original
sot 23 marking code rad marking RAD KSR-2031-000

13001 TRANSISTOR

Abstract: 13001 TRANSISTOR equivalent SRA2211U Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , ) 0.30±0.1 2 R1 R1 = 10K E(COMMON) 0~0.1 1.30±0.1 0.90±0.1 2.0±0.2 1 0.1 Min , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
ND SOT-323 KSR-3031-000

13001 TRANSISTOR equivalent

Abstract: 13001 switching circuit SRA2212U Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , ) 0.30±0.1 2 R1 R1 = 100K E(COMMON) 0~0.1 1.30±0.1 0.90±0.1 2.0±0.2 1 0.1 Min , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
diode 3039 KSR-3039-000

13001 TRANSISTOR equivalent

Abstract: 13001 TRANSISTOR SRC1212S Semiconductor NPN Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , Dimensions unit : mm · Equivalent Circuit 2.4±0.1 1.30±0.1 C(OUT) 3 2.9±0.1 1.90 Typ , Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical
AUK
Original
SOT23 MARKING RCB KSR-2040-000

13001 TRANSISTOR equivalent

Abstract: 13001 TRANSISTOR SRC1212UF Semiconductor NPN Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , 0.70-0.15 2 R1 = 100K 0~0.1 0.11±0.05 2.0±0.1 1.30 BSC 1.30±0.1 E(COMMON) PIN , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
KSR-3038-000 transistor npn 13001 SRC1212U 13001 switching

13001 TRANSISTOR

Abstract: sot-23 MARKING CODE rab SRA2212S Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , Dimensions unit : mm · Equivalent Circuit 2.4±0.1 1.30±0.1 C(OUT) 3 2.9±0.1 1.90 Typ , Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical
AUK
Original
sot-23 MARKING CODE rab marking code RAB KSR-2039-000

13001 TRANSISTOR

Abstract: 13001 TRANSISTOR equivalent SRA2212UF Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , 0.70-0.15 2 R1 = 100K 0~0.1 0.11±0.05 2.0±0.1 1.30 BSC 1.30±0.1 E(COMMON) PIN , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
KSR-3040-000

KSR-2022-001

Abstract: 13001 TRANSISTOR SRC1210S Semiconductor NPN Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , Dimensions unit : mm · Equivalent Circuit 2.4±0.1 1.30±0.1 C(OUT) 3 2.9±0.1 1.90 Typ , Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical
AUK
Original
KSR-2022-001 rca transistor

13001 TRANSISTOR

Abstract: SRC1211U SRC1211U Semiconductor NPN Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , ) 0.30±0.1 2 R1 R1 = 10K E(COMMON) 0~0.1 1.30±0.1 0.90±0.1 2.0±0.2 1 0.1 Min , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
KSR-3029-000

SRA2210UF

Abstract: 13001 TRANSISTOR equivalent SRA2210UF Semiconductor PNP Silicon Transistor Descriptions · Switching application · Interface circuit and driver circuit application Features · · · · With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density , 0.70-0.15 2 R1 = 4.7K 0~0.1 0.11±0.05 2.0±0.1 1.30 BSC 1.30±0.1 E(COMMON) PIN , * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
AUK
Original
KSR-3028-000
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