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MTA18ASF2G72PZ-2G6B1 Micron Technology Inc DDR DRAM Module, 2GX72, CMOS, HALOGEN FREE, RDIMM-288
MT49H16M36SJ-25:B Micron Technology Inc DDR DRAM
MT9JSF25672AZ-1G9K1 Micron Technology Inc DDR DRAM Module
PF48F4000P0ZBQEF Micron Technology Inc Flash, 16MX16, 100ns, PBGA88
MT44K32M18RB-093E IT:A TR Micron Technology Inc 32MX18 RLDRAM 3 PLASTIC IND TEMP PBF FBGA 1.35V
MT48LC4M32B2P-6A:L TR Micron Technology Inc 4MX32 SDRAM PLASTIC COMMERCIAL PBF TSOP 3.3V

13-micron

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: user. The HM63941 is fabricated using the Hitachi CMOS 1.3micron technology. The device is available in DIR FEATURES · First-In, First-Out Dual Port Memory · 4k x 9 Organization · Low-Power CMOS 1.3micron -
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63941P-45 63941P-25 63941p
Abstract: checking at the option of the user. The HM63941 is fabricated using the Hitachi CMOS 1.3micron technology , x 9 Organization Low-Power CMOS 1.3micron Technology Asynchronous and Simultaneous Read and Write -
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HM63941-25/35/45
Abstract: checking at the option of the user. The HM63941 is fabricated using the Hitachi CMOS 1.3micron technology , 2k x 9 Organization Low-Power CMOS 1.3micron Technology Asynchronous and Simultaneous Read and -
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HM63921 DP-28NA
Abstract: user. The HM63941 is fabricated using the Hitachi CMOS 1.3micron technology. The device is available in , CMOS 1.3micron Technology Asynchronous and Simultaneous Read and Write Fully Expandable in Depth and/or -
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63921P-20
Abstract: checking at the option of the user. The HM63941 is fabricated using the Hitachi C M O S 1.3micron , Organization · Low-Power C M O S 1.3micron Technology · Asynchronous and Simultaneous Read and Write · Fully -
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db opera 415 HM63921-2
Abstract: '¢ First-In, First-Out Dual Port Memory 4k x 9 Organization Low-Power CMOS 1.3micron Technology -
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Abstract: capacity. It uses .13-micron technology and embedded 3.2-Gbps SerDes to deliver 40 Gbps (one device) or Applied Micro Circuits
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C192X 405EP AMCC powerpc C192 Q-64G
Abstract: switch, shared-memory device, which provides 80 Gbps of switching capacity. It uses .13-micron Applied Micro Circuits
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899-ball Q-80G Q-80G- OC-48 OC-192
Abstract: microarchitectural enhancements, the Hammer processor will be initially produced using a .13micron SOI (Silicon on Advanced Micro Devices
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x86 processor architecture chipkill intel x86-64 amd x86 processor architecture Northbridge AMD 2m flash memory
Abstract: AC1010 · ACT1010 54AC/74AC1010 · 54ACT/74ACT1010 16 x 16 Parallel Multiplier/Accumulator Description The 'AC/'ACT1010 is a high-speed, low-power 16 x 16 bit parallel m ultiplier with a 35-bit accumulator that is ideally suited for real-time digital signal processing applications. Fabricated using 1.3-micron FACT technology, the 'AC/'ACT1010 offers a very low power alternative (10% o f the power of bipolar and NMOS counterparts) and exceptional speed (55 ns maximum m ultiply accumulate) performance. The 'AC -
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Scans-059 TDC1010 54ACT 74ACT
Abstract: AC1010 â'¢ ACT1010 54AC/74AC1010 â'¢ 54ACT/74ACT1010 16 x 16 Parallel Multiplier/Accumulator Description The 'AC/'ACT1010 is a high-speed, low-power 16 x 16 bit parallel multiplier with a 35-bit accumulator that is Ideally suited for real-time digital signal processing applications. Fabricated using 1.3-micron FACT technology, the 'AC/'ACT1010 offers a very low power alternative (10% of the power of bipolar and NMOS counterparts) and exceptional speed (55 ns maximum multiply accumulate) performance. The 'AC -
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TDC1010J 1421S pir 325 sm2223 tsl-3
Abstract: AC1010 â'¢ ACT1010 5AC/7AC11 â'¢ 5ACT/7ACT11 4 4 0 0 4 4 00 16 x 16 Parallel Multiplier/Accumulator Description Connection Diagrams The â'™AC/â'™ACT1010 is a high-speed, low-power 16 x 16 bit parallel m ultiplier with a 35-bit accumulator that is Ideally suited fo r real-time digital signal processing applications. Fabricated using 1.3-micron FACT technology, the â'™AC/â'™ACT1010 offers a very low power alternative (10% of the power of bipolar and NMOS counterparts) and exceptional -
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P10-Y10I
Abstract: AC1010 · ACT1010 54AC/74 AC 1010 · 54ACT/74ACT1010 16 x 16 Parallel Multiplier/Accumulator Description The 'AC/'ACT1010 is a high-speed, low-power 16 x 16 bit parallel m ultiplier with a 35-bit accumulator that is ideally suited for real-time digital signal processing applications. Fabricated using 1.3-micron FACT technology, the 'AC/'ACT1010 offers a very low power alternative (10% of the power of bipolar and NMOS counterparts) and exceptional speed (55 ns maximum m ultiply accumulate) performance. The 'AC -
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Abstract: Revised January 2000 FACT Descriptions and Family Characteristics Fairchild Semiconductor Advanced CMOS Technology -FACT-Logic Fairchild Semiconductor introduced FACT (Fairchild Advanced CMOS Technology) logic, a family of high speed advanced CMOS circuits, in 1985. FACT logic offers a unique combination of high speed, low power dissipation, high noise immunity, wide fanout capability, extended power supply range and high reliability. The 1.3-micron silicon gate CMOS process utilized in this family has Fairchild Semiconductor
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74ACXX 74xx74 74xx163 74xx138 ACTQ244 74xx74 data sheet MIL-STD-883
Abstract: L V Q Descriptions an d Family Characteristics mm Semiconductor 29 National LVQ Descriptions and Family Characteristics In 1985, a family of high speed advanced CMOS circuits was introduced. FACTTM (Fairchild Advanced CMOS Tech nology) Logic offered a combination of high speed, low pow er dissipation, high noise immunity, wide fanout capability, extended power supply range and high reliability. The 1.3-micron silicon gate CMOS process utilized in this family was proven in the field of high -
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18LV 74xx00 TL/F/10976-19 54AC245
Abstract: 's FAST bipolar technology family) to offer a complete family of 1.3-micron SSI, MSI, and LSI devices Fairchild Semiconductor
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Difference between LS, HC, HCT devices AC240 ACT240 ACT244 F100324 F100325
Abstract: _3.fm - Rev. 3, Pub. 8/2002 13Micron Technology, Inc. Reserves the right to change products or -
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EIA-RS-455 fiber optical photo detector audio Transmitter receiver optic cable Arrayed Waveguide Grating optical fiber free book injection laser diode
Abstract: user. The HM63941 is fabricated using the Hitachi CMOS 1.3micron technology. The device is available in DIR FEATURES · First-In, First-Out Dual Port Memory · 4k x 9 Organization · Low-Power CMOS 1.3micron Micron Technology
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MT28F008B5 MT28F800B5 ESS Technology 16KB/8K- 8/512K