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Part Manufacturer Description Datasheet BUY
PT6914C Texas Instruments 1-OUTPUT 12W DC-DC REG PWR SUPPLY MODULE, SMD-23 visit Texas Instruments
PT6913C Texas Instruments 1-OUTPUT 12W DC-DC REG PWR SUPPLY MODULE, SMD-23 visit Texas Instruments
PT6911C Texas Instruments 1-OUTPUT 12W DC-DC REG PWR SUPPLY MODULE, SMD-23 visit Texas Instruments
PT6915C Texas Instruments 1-OUTPUT 12W DC-DC REG PWR SUPPLY MODULE, SMD-23 visit Texas Instruments
PT6912C Texas Instruments 1-OUTPUT 12W DC-DC REG PWR SUPPLY MODULE, SMD-23 visit Texas Instruments
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

12W smd transistor

Catalog Datasheet MFG & Type PDF Document Tags

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage MOSFET , Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , -! 3! 3! 3! 3! RZ! RZ! a! F! Typical performance at 1025MHz with an input power of 12W , -01-DS18A 07/15/2010 2 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor , TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10
Advanced Semiconductor
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AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 1025MH 1150MH HVV1012-550-EK FXT000116 3-252510RS3411 P242393

transistor SMD 12W MOSFET

Abstract: transistor JE 1090 an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from , Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , ! Typical performance at 1030 MHz at an input power of 12W. ! 8(F! , Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with
Advanced Semiconductor
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transistor JE 1090 HVV1011-600 1030MH 1090MH HVV1011-600-EK V1011-600 SCAS-0440-08C

transistor SMD 12W MOSFET

Abstract: SMD Code 12W SOT23 power is up to 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV-BIAS demonstration board , to 800VDC a transistor with 1200V to 1500V breakdown capability is necessary. This makes the design , used together with a further 600V or 800V CoolMOSTM transistor. The user of this module is able to , transistor is achieved. Technical specification: Input Voltage Range: 1201) VDC . 800VDC Total
Infineon Technologies
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ICE2B265 SMD Code 12W SOT23 ICE2B265 Application Note HV cascode smps SPA02N60-C3 ICE2B265 equivalent SPA02N80

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV -BIAS demonstration board shows a , transistor with 1200V to 1500V breakdown capability is necessary. This makes the design expensive and , together with a further 600V or 800V CoolMOSTM transistor. The user of this module is able to supply , CoolMOSTM transistor is achieved. Technical specification: 1) Input Voltage Range: 120 VDC .
Infineon Technologies
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ICE1B265 AN-EvalMF2-ICE2A0565Z-1 smd transistor 12w mosfet 12w smd UEI18 smd transistor 12W 52

smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET Primary Inductance Compensation The ACT365 is optimized for compact size 6W to 12W adapter , and CEC Average Efficiency Standards â'¢ Dedicate Adapter Application from 6W to 12W , ACT365SH-T (SOP-8) -1- 85-265VAC TYPICAL APPLICATION 5V/2.1A Po MAX 12W www.active-semi.com , . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor. Connect this , . Ground. Base Drive. Base driver for the external NPN transistor. Power Supply. This pin provides bias
Active-Semi
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smd transistor 12W 13 smd transistor 12W 3 pins D13005 E D13005 D13005 transistor smd transistor 12W 55

EE16 transformer 5v 2.1a

Abstract: t1/epc17 TRANSFORMER , Electrolytic, 10uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 , Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE 0.20Π, , 1000pF/50V, 0805,SMD POE Start Finish Turn s 2 3 34 2UEW SH1 KSC C8 , ,1000V/1.0A, RMA PANJIT D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes D5 Diode, 1N4148 SMD PANJIT L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 0.55*5T, 5
Active-Semi
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EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER EE16 12V SMD TRANSISTOR B7 ACT41X ACT410 ACT413 EPC17 ACT411 12V1A
Abstract: , Electrolytic, 10uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 , Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE 0.20Π, , 1000pF/50V, 0805,SMD POE Start Finish Turn s 2 3 34 2UEW SH1 KSC C8 , ,1000V/1.0A, RMA PANJIT D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes D5 Diode, 1N4148 SMD PANJIT L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 0.55*5T, 5 Active-Semi
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ACT412 120KH

230V AC primary to 12V, 1A secondary transformer

Abstract: 230V ac to 5V dc usb charger circuit Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V,1206,SMD POE , , SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 8 D8 Diode, schottky, 40V/5A, SL540, DO-214AB,SMD L1 Axial Inductor, 1.5mH, 0410,Dip Vishay SH2 Amode Tech Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB, L*W*T , , 6.8uF/400V, 10x12mm Capacitor, Ceramic, 1000pF/500V,1206,SMD C4 Capacitor, Electrolytic,4.7uF/35V
Active-Semi
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230V AC primary to 12V, 1A secondary transformer 230V ac to 5V dc usb charger circuit 13003 charger 230v dc 5a rectifier diode ACT334 ACT512 ACT410/411 ACT330 F/400V SC053

D13005

Abstract: transistor BD 222 SMD Output Cord Resistance Compensation The ACT337 is optimized for compact size 7W to 12W charger , '¢ Adjustable Power from 7W to 12W â'¢ Minimum External Components â'¢ SOP-8 Package APPLICATIONS â'¢ RCC , DESCRIPTION 1 SW Switch Drive. Switch node for the external NPN transistor. Connect this pin to the , transistor. -2- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT337 Rev 2, 14 , internal compensation network, modulates the external NPN transistor peak current at CS pin with current
Active-Semi
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transistor BD 222 SMD transformer winding formula 220v Ac to 12v Dc

transistor SMD 12W

Abstract: smd transistor code 12w DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz 10:1 , 3224W 10K Zener Diode 5.1V 500mW SOD80 RF LDMOS Transistor 12V 15W TEFLON-GLASS Er = 2.55, THK = 0.762mm , -915-12W Obsolete Product Page/ Datasheet Description 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY Transistors|Transistors, Radio Frequency|LDMOS 28/32 V 900 MHz Applications - SMD Plastic Search time
STMicroelectronics
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smd 501 transistor VJ1206Y104KXAT 12W smd transistor transistor smd hq smd transistor 12W 74 SMD Code 12W

13003 charger

Abstract: 121k 1kv capacitor Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V,1206,SMD POE , , SMD POE D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Diode,Ultra Fast, FR107,1000V/1.0A, DO-41 8 D8 Diode, schottky, 40V/5A, SL540, DO-214AB,SMD L1 Axial Inductor, 1.5mH, 0410,Dip Vishay SH2 Amode Tech Transistor, HFE 20-25, NPN,13003,TO-126 Huawei PCB, L*W*T , , 6.8uF/400V, 10x12mm Capacitor, Ceramic, 1000pF/500V,1206,SMD C4 Capacitor, Electrolytic,4.7uF/35V
Active-Semi
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121k 1kv capacitor 230v to 5v circuit using 13003 transistor PC817C TL431A 18AWG ACT513 12V2A

transistor SMD 12W

Abstract: transistor SMD 12W MOSFET , 10V, Y5Y, SMD Semiconductors 4 Diode, BAV99L 2 Transistor, bipolar, 2N3904, SMD Integrated , supply voltage with regulated lamp current. Rated 12W power output at 12V input Open lamp regulation , Resistors 1 4.3K, ±5%, SMD, 0805 2 1M, ±5%, SMD, 0805 1 140, ±1%, SMD, 0805 1 1K, ±5%, SMD, 0805 1 2M, ±5%, SMD, 0805 1 280K, ±5%, SMD, 0805 Capacitors 2 10nF, 50V, Y5V, SMD 8 2 1 1 1 1 , C_vref Cul 10nF, 16V, X7R, SMD 9 10 11 12 13 14 Vendor / Part # 1µF 6.3V X7R 6.8nF 16V
Monolithic Power Systems
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MP1011EMA darfon darfon inverter darfon LCD Inverter Design pure sine wave inverter using transformer 12W SMD MOSFET darfon inverter board MP1011A TSSOP20 EV0014

07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w SPD07N60C2 SPU07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , , leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G=12W , load, T j=125°C t = f (RG ), inductive load, Tj=125°C par.: V DS=380V, V GS=0/+13V, RG=12W par , load, Tj =125°C par.: V DS=380V, V GS=0/+13V, RG=12W par.: VDS =380V, VGS =0/+13V,ID=7.3A 0.40
Infineon Technologies
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P-TO252 Q67040-S4311 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W smd transistor 12W 98 07N60C2 equivalent P-TO251 Q67040-S4312 07N60C2

TRANSISTOR SMD MARKING CODE 12w

Abstract: smd transistor marking 12W SPP07N60C2 SPB07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G=12W , load, T j=125°C t = f (RG ), inductive load, Tj=125°C par.: V DS=380V, V GS=0/+13V, RG=12W par , load, Tj =125°C par.: V DS=380V, V GS=0/+13V, RG=12W par.: VDS =380V, VGS =0/+13V,ID=7.3A 0.40
Infineon Technologies
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Q67040-S4310 12W SMD MARKING CODE SMD 12w transistor SMD MARKING CODE 12w diode smd marking -7 SDP06S60 P-TO263-3-2 P-TO220-3-1 Q67040-S4309

12-0-12 transformer used 24v dc supply

Abstract: smd transistor 6p , SMD, TFP, 150V, 57A,ROHS FUJI ELECTRIC MJD31CG 1 ea Q3 TRANSISTOR, NPN, 3P , power supply. It can be used in various single transistor topologies including forward and flyback , drain source of the transistor. As the main switch is turned off, a resonance is developed between the , the drain of the transistor is clamped to VIN. VIN*NS/NP V DS V RES VOUT = VIN*D*NS/NP TX , the drain source of the transistor Coss, the winding capacitance of the transformer Ct, and the
Intersil
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ISL6721EVAL3Z 12-0-12 transformer used 24v dc supply smd transistor 6p TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W sot-23 16ME1800WG ISL6740 ISL67401 ISL6742 ISL6743 ISL6745

smd transistor 12W 3 pins

Abstract: TDA8920BJ 21 6.0 (±12V, 8) 8.0 (±12V, 8) N 0.15% 40 30 60 TDA2616 2 x 12W HIFI SE 7.5 - 21 12.0 (±16V, 8) 15.0 (±16V, 8) N 0.15% 40 30 TDA2616Q 2 x 12W HIFI , (4,22V) TDA1517(P) 2 x 6W SE 8.5 - 18 TDA1517ATW mini SMD 2x3W SE/BTL 6.0 - , transistor used in our amplifiers (class-AB) Missing current limiter (is activated when the current in the + , ), UV ( Y SO20L Eff=90%, Rail to rail Speaker Flat (LCD) Micro 12W (4, 22V
Philips Semiconductors
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PNX0101 PNX0105 TDA8920BJ TEA5767, TEA5761 pnx0102 tda8947j tea5767 TFBGA180 PNX0102 ARM7926EJ-S LFBGA228

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct 107-842 CAP ELECTRO 470 UF 400V 108-390 SMD CAP 22UF 6.3V 105DEG 108-407 SMD CAP 33UF 6.3V 105DEG 108-413 SMD CAP 47UF 6.3V 105DEG 108-429 SMD CAP 100UF 6.3V 105DEG 108-441 SMD CAP 10UF 16V 105DEG 108-457 SMD CAP 22UF 16V 105DEG 108-463 SMD CAP 47UF 16V 105DEG 108-479 SMD CAP 4.7UF 25V 105DEG 108-485 SMD CAP 6.8UF 25V 105DEG 108-508 SMD CAP 22UF 25V 105DEG 108-558 SMD CAP 0.1UF 50V 105DEG 108-586 SMD CAP 0.68UF 50V 105DEG 108-592 SMD CAP 1.0UF 50V 105DEG 108-609 SMD CAP 2.2UF 50V 105DEG 108-615 SMD CAP 4.7UF 50V
RS Components
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SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a 1500UF 3300UF 15000U 10000UF 15000UF 4700UF

M39016/6

Abstract: m83536 - 110 / 700mW / - 5 - 110 V / 800mW / - 5 - 110 V / 1.2W / - 5 - 110 V / 1.2W / 800 mW , 0.9W / 1.2VA 12 - 125 / 24 - 240 1.2W / 2VA 6 - 220 / 6 - 230 1.2W / 2.3VA 6 - 220 / 6 - 230 1.2W / 2.3VA 1240 Vac 1500 Vac -45 to +70 Hermetic Plug-in 29.36 x 23.11 x 32.54 UL, CSA , 1.6W / 2.8 VA 6 - 220 / 6 - 400 1.2W / 2.8 VA 6 - 220 / 6 - 400 1.2W / 2.8 VA 6 - 48 / 24 - , . Valid for contracts with AgNi0.15 contact-material Relay Type Micro K (V23086-C1/C2) Micro K SMD
Tyco Electronics
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M39016/6 m83536 V23084 m39016 M39016/7 M83536/9 V23092

LENZE smd diagram

Abstract: LENZE smd flyback converter has the following performance and maximum ratings: Output power 12W Output , , Electrolytic Capacitor, Ceramic (SMD) Capacitor, Electrolytic Capacitor, Ceramic Capacitor, Electrolytic Capacitor, Ceramic (SMD) Rectifier bridge, 380VAC,0.8A (SMD) Diode (SMD) Ultrafast Diode, 1A, 600V (SMD) Schottky diode (SMD) Connector MOSFET 1A, 600V (SMD) Resistor(SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Resistor (SMD) Transformer (see text
Motorola
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AN1594 MC33364 LENZE smd diagram LENZE smd dc dc flyback converter with top 221 transformer 12v/1amp Lenze CRITICAL CONDUCTION MODE flyback AN1594/D

dinverter 768r

Abstract: G7D-412S CAPS ELECTRO 220UF 63V CAPS ELECTRO 470UF 63V CAPS ELECTRO 47UF 450V CAP ELECTRO 470 UF 400V SMD CAP 22UF 6.3V 105DEG SMD CAP 33UF 6.3V 105DEG SMD CAP 47UF 6.3V 105DEG SMD CAP 100UF 6.3V 105DEG SMD CAP 10UF 16V 105DEG SMD CAP 22UF 16V 105DEG SMD CAP 47UF 16V 105DEG SMD CAP 4.7UF 25V 105DEG SMD CAP 6.8UF 25V 105DEG SMD CAP 22UF 25V 105DEG SMD CAP 0.1UF 50V 105DEG SMD CAP 0.68UF 50V 105DEG SMD CAP 1.0UF , 112-440 112-490 112-715 112-721 112-743 112-765 112-771 112-793 SMD CAP 2.2UF 50V 105DEG SMD CAP 4.7UF
RS Components
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dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual HUF76107P3 IEEE1394 8210I 8210E 3110I 74VHC04B
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