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12A8 Datasheet

Part Manufacturer Description PDF Type
12A-8 Inmet A ATTENUATOR Scan
12A8 N/A Discontinued Transistor Data Book 1975 Scan
12A8 N/A GE Transistor Specifications Scan
12A800 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
12A800 N/A Shortform Semicon, Diode, and SCR Datasheets Scan
12A-8F Inmet A ATTENUATOR Scan
12A8F Semicon Components High Speed (Switching Types), Stud Base Rectifiers - Rating to 30.0 Amps Scan
12A-8M Inmet A ATTENUATOR Scan

12A8

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 4-20 mA 4-20 mA 12±8 mA 12±8 mA 12±8 mA 12±8 mA 4-20 mA 4-20 mA 4-20 mA 4-20 mA 12±8 mA 12±8 mA 12±8 mA 12±8 mA 115 Vac 115 Vac 230 Vac 230 Vac 115 Vac 115 Vac 230 Vac , mA 12±8 mA 12±8 mA 12±8 mA 12±8 mA 4-20 mA 4-20 mA 4-20 mA 4-20 mA 12±8 mA 12±8 mA 12±8 mA 12±8 mA 115 Vac 115 Vac 230 Vac 230 Vac 115 Vac 115 Vac 230 Vac 230 Vac Omega Engineering
Original
Abstract: compliance; 4-20 mA dc, 12±8 mA dc into 750 ohm Max 15 Vdc compliance Zero Adjust: ± 5% minimum Span , 240 Vac/5A 0±1 mA Self powered 0±1 mA Self powered 12±8 mA 120 Vac 12±8 mA 120 Vac 12±8 mA 240 Vac 12±8 mA 240 Vac $475 475 605 605 605 605 ac Watt/Var (2 Elements) For , Self powered 12±8 mA 120 Vac 12±8 mA 120 Vac 12±8 mA 240 Vac 12±8 mA 240 Vac $560 560 , Self powered 12±8 mA 120 Vac 12±8 mA 120 Vac 12±8 mA 240 Vac 12±8 mA 240 Vac $710 710 Omega Engineering
Original
OM11-41540AFB0- OM11-41580AFB0- OM11-41540AHD1- OM11-41580AHD1- OM11-41540AHD2- OM11-41580AHD2-
Abstract: ¸' Product Marking Ordering Part Name Marking on Product Standard MWI75-12A8 MWI75-12A8 , right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved MWI75-12A8 , reserved 0.0001 0.0001 MWI75-12A8 0.001 0.01 0.1 1 10 t [s] Fig.à IXYS
Original
75-12A8 MWI75-12A8
Abstract: 5.0±0.3 T16×12×8 16±0.5 12±0.4 8±0.3 T18×10×10 18±0.5 10±0.4 10±0.3 , —7×5 16.8 30.5 T16×12×8 16 T18×10×10 Fs5(±25%) Fs7(±25%) Fs10(±25%) 2.6 Yuxiang Magnetic Materials
Original

MJ1016

Abstract: robot circuit diagram free Part Name Marking on Product Standard MWI75-12A8 MWI75-12A8 IXYS reserves the right to , . © 2009 IXYS All rights reserved MWI75-12A8 200 400 600 800 0 1000 -di/dt[A/µs , =125°C 5 VCE= 600 V VGE =±15V IC=75A TVJ=125°C Eon Eoff 0.0001 0.0001 MWI75-12A8
IXYS
Original
MJ1016 robot circuit diagram free FREE ENERGY DIAGRAM mwi7512a8
Abstract: 3 15 A 3 12â'"8 SCN T7115 Channel Number. 3 7â'"0 CMD Command Code , Description 4 15 A 4 12â'"8 SCN T7115 Channel Number. 4 7â'"0 INTR Interrupt , Bit(s) Field 15 A 12â'"8 SCN T7115 Channel Number. 7â'"0 INTR Interrupt -
OCR Scan
T7130 APX86 MC68000 T7130-FC 132-P 52AL330240

AIC15

Abstract: 100 5 80 IRM 0 0 100 200 300 QG nC 0 400 0 MWI75-12A8 200 400 600 -di/dt , 1000 1200 1400 V VCE 0.0001 0.0001 MWI75-12A8 0.001 0.01 0.1 t 1 s 10 Fig. 11
IXYS
Original
AIC15
Abstract: trr TVJ = 125°C VR = 600 V IF = 100 A 120 60 t rr 40 5 20 60 IRM MWI00-12A8 , 0.0001 0.0001 single pulse MWI100-12A8 0.001 0.01 0.1 1 s 10 t Fig. 12 Typ IXYS
Original
E72873 MWI100-12A8
Abstract: —7×5 14.0±0.5 7.0±0.4 5.0±0.3 T16×12×8 16.0±0.5 12.0±0.4 8.0±0.3 T16à , 4200 4800min T14×7×5 1.85 16.8 30.5 512.7 2.6 3330 4660 5360min T16×12×8 Yuxiang Magnetic Materials
Original
Abstract: 12A8 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type (NPN/PNP) V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Emitter-Base Diode (Y/N) Semiconductor MaterialSilicon American Microsemiconductor
Original
Abstract: 0 MWI75-12A8 200 400 600 800 A/μs 0 1000 -di/dt Fig. 6 Typ. turn off , dimensions. © 2007 IXYS All rights reserved 0.0001 0.0001 single pulse MWI75-12A8 0.001 IXYS
Original

4A4 ferrite material

Abstract: —6×5 T10×5×5 T12×6×4 T12.7×7.8×5 T13×7×5 T14×7×5 T16×12×8 T16×9×8 T16×9.5×8 T17à , —7×5 T16×12×8 T16×9×8 T16×9.5×8 T17×10×8 T18×10×10 T22×14×12 T22×10×10 T22
Yuxiang Magnetic Materials
Original
4A4 ferrite material

20B5

Abstract: G46739-001 < 10D3< 10B6< 12C3< 11B6< 10C3< 10B6< 12A8 11B6< 10B6< 12A8 11B6< 10B6< 12A8 V1P5_S0 11B6< 6A6> 6A6> R2A8 1 2 7.5K 1% 0402LF CH 15 14 13 12 11 , AR27 AP28 2 1 0 D 12A8 11B6< 10B6< 12B8 11B6< 10B6< 12A8 11B6< 10A6< 12D7 11C3 , < 5D7 12D7 12A8 12A8 B 12D3< 12C3< 11B6< 11B6< 12A8 IN 11B6< IN , 240 1% 0402LF CH ZQ_1 F7 CK G7 CS_N G3 CAS_N 12A8 11B6< 5D7> IN
Intel
Original
20B5 G46739-001 A36096 20B5 voltage H47895-001 G83568-001 X1000 H48142-207 H48125-800 1500X500 1375X250 H38681
Abstract: /dt MWI00-12A8 800 A/µs 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off , 0.001 single pulse 400 600 800 1000 1200 1400 V VCE 0.0001 0.0001 MWI100-12A8 IXYS
Original

MWI100-12A8

Abstract: E72873 MWI00-12A8 0 0 0 100 200 300 400 nC 500 QG Fig. 5 Typ. turn on gate charge , single pulse MWI100-12A8 0.001 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal
IXYS
Original

l518a

Abstract: tel 5-1210 '"12â'"1 E L518â'"12â'"2 EL518â'"12â'"3 EL518â'"12â'"4 EL518â'"12â'"5 EL518â'"12â'"6 EL518â'"12â'"8 EL518â
-
OCR Scan
l518a tel 5-1210 L518-12-2 L518 atronic EL51B L518-8-0 L518-8-10 EL518-12-0
Abstract: Single-Phase Multi-Rate Watt-Hour Meter IC Electrical Characteristics ♦ Operating temperature: -40â"ƒï½ž+85â"ƒ ♦ Operating voltage:4.5V~5.5V ♦ Operating current: Typical high-speed mode: 4.5 mA Typical low-speed mode: 0.5 mA Clock maintaining: less than 0.5 uA Package QFP64(14 mm×14 mm) LQFP64(10 mm×10 mm) T X D 1 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 4×24 LCD display driver / 12×8 LED scan display Embedded PLL circuit, generates MCU clock Embedded Fudan Microelectronics
Original
PIC16C6X SEG17 SEG16 FM2306A

EL519-12-1

Abstract: EL519-12-3 EL519â'"12â'"6 12±1 6±1,5 1542±30 EL519â'"12â'"7 12±1 7±1.5 1797±35 EL519â'"12â'"8 12±1 8±2.0
-
OCR Scan
EL519-12-0 EL519-12-1 EL519-12-3 EL519-12-5 EL519-12-4 EL519-12-10 EL519-12-6 L519-15-0
Abstract: 44 45 46 47 48 49 50 51 52 53 54 55 56 T16×10×5 core T16×12×8 core T17 Yuxiang Magnetic Materials
Original

2B2 bridge rectifier ic

Abstract: 1B4 SMD < 10D3< 10B6< 12C3< 11B6< 10C3< 10B6< 12A8 11B6< 10B6< 12A8 11B6< 10B6< 12A8 V1P5_S0 11B6< 6A6> 6A6> R2A8 1 2 7.5K 1% 0402LF CH 15 14 13 12 11 , AR27 AP28 2 1 0 D 12A8 11B6< 10B6< 12B8 11B6< 10B6< 12A8 11B6< 10A6< 12D7 11C3 , < 5D7 12D7 12A8 12A8 B 12D3< 12C3< 11B6< 11B6< 12A8 IN 11B6< IN , 240 1% 0402LF CH ZQ_1 F7 CK G7 CS_N G3 CAS_N 12A8 11B6< 5D7> IN
Maxim Integrated Products
Original
2B2 bridge rectifier ic 1B4 SMD 6A8 SMD 4B1 bridge rectifier HFJ11-1G02E Resistor Network Rpack 10K DS33M30 DS33M30DK RPB06 1000PF HFJ11 1G02E

transistor number D 2498

Abstract: TL431 An ¸' Product Marking Ordering Part Name Marking on Product Standard MWI75-12A8 MWI75-12A8 , right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved MWI75-12A8 , reserved 0.0001 0.0001 MWI75-12A8 0.001 0.01 0.1 1 10 t [s] Fig.à
Microsemi
Original
LX1431 LX6431CLP LX6431 TL431 transistor number D 2498 TL431 An Transistor D 2494 LX1431EB LX8585/8585A

LM385-2.5V

Abstract: 385B12 5.0±0.3 T16×12×8 16±0.5 12±0.4 8±0.3 T18×10×10 18±0.5 10±0.4 10±0.3 , —7×5 16.8 30.5 T16×12×8 16 T18×10×10 Fs5(±25%) Fs7(±25%) Fs10(±25%) 2.6
Microsemi
Original
LM385 LM385-1 LM385-2 LM385-2.5V 385B12 LM385-1.2V 385B LM385/385B LM385B-1 LM385B-2
Showing first 20 results.