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128MB Datasheet

Part Manufacturer Description PDF Type
128MbRDRAMs Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original

128MB

Catalog Datasheet MFG & Type PDF Document Tags

PF38F4060M0Y3DF

Abstract: PF38F3040 X16D - 105ball 9x11 mm 1Gb + 128P MUX PF38F6060M0Y3DE 1Gb 128Mb M PSRAM Uniform , PF38F5060M0Y0CF 512Mb 128Mb M PSRAM Uniform 1.8 1.8 Paralell x16 x16 X16C - 107ball 8x11 mm 512Mb + 128PS MUX PF38F5060M0Y3CF 512Mb 128Mb M PSRAM Uniform , 512Mb 128Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D - 105ball 9x11 mm 512Mb + 128DDR MUX PF38F5060M0Y1EE 512Mb 128Mb M DDR Uniform 1.8 1.8
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Original
PF38F4060M0Y3DF PF38F3040 m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE 1024M PF58F0062M0Y1BF PF58F0033M0Y0BF PF58F0033M0Y1BF JZ58F0112M0Q0GE PF38F6066M0Y3DF

TS128MDOM40V

Abstract: HD10 Transcend 40-Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB , products 40-Pin IDE Flash Modules are ideal for use in the · Storage Capacity: 128MB ~ 8GB , 0.008 1 Ver 1.7 Transcend 40-Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB Input Power Pin Assignments Pin No. Pin Name Pin Pin Pin No. Name No , -Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB Block Diagram With 1
Transcend Information
Original
TS128MDOM40V HD10 HD11 HD15 TS256MDOM40V Transcend 32M-512M

MT48LC4M32B2P

Abstract: 6A 1176 18 20 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 5 Micron Technology, Inc
Micron Technology
Original
MT48LC4M32B2P 6A 1176 marking 6a2 smd MT48LC4M32B2 PC100- 4M32B2

MT48LC4M32B2P

Abstract: x32SDR / decoder. PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 1 Products and specifications , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 2 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 3 Micron Technology, Inc , . 80 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 4 Micron Technology, Inc , . 41 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 5 Micron Technology, Inc
Micron Technology
Original
x32SDR x32s

SAMSUNG NAND Flash Qualification Report

Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die , whole without Samsung`s written approval. 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory , , Reliability test methods. This report has been revised the reliability and qualification data for the 128Mb , Information · Reliability Test Results · 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 , Bits 63TBGA 1.7V ~ 1.95V 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory Quality
Samsung Electronics
Original
K9F2808U0C-VCB0 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification 48TSOP1 48WSOP1 16MX8 K9F2808U0C-VI

MT48LC16M8A2BB

Abstract: 2-2-2 15 15 15 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 1 , Decoder: www.micron.com/decoder PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 , . 85 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 3 Micron , . 76 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 4 Micron , . PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 5 78 80 81 82
Micron Technology
Original
MT48LC16M8A2BB MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC133- AEC-Q100 PC133

MT48LC4M32B2P

Abstract: 143 3-3-3 20 20 21 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 1 , MT48LC4M32B2F51 4 Meg x 32 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef80872800 128mb_x32_sdram.pdf , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 5 Micron Technology, Inc
Micron Technology
Original

MT48LC4M32B2P

Abstract: TP 472 15 18 18 15 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 5 Micron Technology, Inc
Micron Technology
Original
TP 472

K4S641632k uc60

Abstract: K4S561632J-UC60 Refresh 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K , K4S281632I 128Mb K-die Power (V) LVTTL K4S280432I 4Banks Refresh 8M x 8 K4S641632N 128Mb I-die Interface UC75 UL75 32M x 16 Note 1 : U : TSOP(II) (Lead-free) L : TSOP(II , compatibility with PC100. - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR , ) 1Q'08 128Mb I-die 4Banks K4S281632I UI60/I75 UP60/P75 8M x 16 LVTTL 4K/64ms
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K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 4K/64 8K/64 133MH 166MH 256MB 512MB

siemens a55

Abstract: siemens a57 . The 128 MB Direct Rambus RIMM module consists of eight 128Mb/ 144Mb Direct Rambus DRAM (Direct RDRAMTM , 256banks on each 128MB module Gold plated edge connector pad contacts Serial Presence Detect (SPD) support , x18 128MB/144MB: 64Mb x16 64Mb x16 64Mb x16 64Mb x16 64Mb x18 64Mb x18 64Mb x18 64Mb x18 256MB/288MB: 128Mb x16 128Mb x16 128Mb x16 128Mb x16 128Mb x18 128Mb x18 128Mb x18 128Mb x18 256MB 256MB 256MB 256MB , -845 HYR1612830G-840 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1812820G-840 16 16 16 16 16 16 16 16 128Mb
Infineon Technologies
Original
siemens a55 siemens a57 siemens A70 siemens b38 marking b28 HYR16 30/HYR18 600MH 800MH 30G/HYR18

PC133 registered reference design

Abstract: MT4LSDT1664AIY-133 accessed, and mode register bit M3 is ignored. i = 7 for 32MB; i = 8 for 64MB and 128MB. 11 Micron , 32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM Features SDRAM Unbuffered DIMM (UDIMM) MT4LSDT464A ­ 32MB MT4LSDT864A(I) ­ 64MB MT4LSDT1664A(I) ­ 128MB For component data sheets, refer to Micron , Meg x 64), 128MB (16 Meg x 64) Single +3.3V power supply Fully synchronous; all signals registered , refresh mode: 64ms, 4,096-cycle refresh for 32MB and 64MB; 64ms, 8,192-cycle refresh for 128MB
Micron Technology
Original
MO-161 PC133 registered reference design MT4LSDT1664AIY-133 168-P 16X64AG

MT48LC4M32B2P

Abstract: 18 20 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 5 Micron Technology, Inc
Micron Technology
Original
Abstract: PRELIMINARY 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES · x8/x16 organization · One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb , Asynchronous Page Mode Reads: 150ns/25ns read access time (128Mb) 120ns/25ns read access time (64Mb) 100ns/25ns , · Timing 150ns (128Mb) 120ns (64Mb) 100ns (32Mb) · Operating Temperature Range Extended Temperature , only exists on the 64Mb and 128Mb devices. On the 32Mb, this pin/ball is a no connect (NC). 2. A23 only Micron Technology
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MT28F128J3 MT28F640J3 MT28F320J3
Abstract: 32MB, 64MB, 128MB (x64, SR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE Features · · · · · · · , (4 Meg x 64), 64MB (8 Meg x 64), 128MB (16 Meg x 64) Single +3.3V power supply Fully synchronous; all , Self Refresh Mode: 64ms, 4,096-cycle refresh for 32MB and 64MB; 64ms, 8,192-cycle refresh for 128MB , ) ­ 64MB MT4LSDT1664A(I) ­ 128MB Figure 1: 168-Pin DIMM (MO-161) Standard 1.00in. (25.40mm , , BA1) 128Mb (8 Meg x 16) 4K (A0-A11) 512 (A0-A8) 1 (S0#, S2#) 128MB 8K 4 (BA0, BA1) 256Mb (16 Meg x 16 Micron Technology
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tsop-56 samsung

Abstract: TC58DVM72A1FTI0 Density Process Pkg-Pins 128Mb 128Mb 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 1Gb 1Gb 1Gb 2Gb 2Gb 4Gb , THNCF1G02DG THNCF1G02DGI 128MB 128MB 128MB 256MB 256MB 256MB 512MB 512MB 512MB 1GB 1GB 1GB , SD-M6404 SD-M1284 SD-F1284 SD-M2564 SD-F2564 SD-M5124 SD-F5125 SD-M01GS *1 Capacity 64MB 128MB 128MB 256MB 256MB 512MB 512MB 1GB MP MP MP MP MP MP MP MP Standard (blue) Standard , 128Mbit 0.175µm 8Mx16 2.7 BGA(9x12) MP TC51YNM716AXBN 128Mbit 0.175µm 8Mx16 1.8 BGA(9x12) CS *1
Toshiba
Original
TC58DVM72A1FTI0 tsop-56 samsung tc58fvm5t2atg TSOP1-48 THNCF128MMG TC58NVG0S3AFTI5 TC58DVM72A1FT00 TC58DVM82A1FT00 TC58DVM82A1FTI0 TC58DVM92A1FT00 TC58DVM92A1FTI0

fw209

Abstract: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES · x8/x16 organization · One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks , /25ns read access time (128Mb) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) · , 64-Ball FBGA OPTIONS · Timing 150ns (128Mb) 120ns (64Mb) 110ns (32Mb) · Operating Temperature Range Commercial Temperature (0ºC to +85ºC) Extended Temperature (-40ºC to +85ºC) 128Mb, 64Mb, 32Mb
Micron Technology
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fw209

100-PIN

Abstract: MT48LC8M16A2P 16MB (x32, SR); 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U ­ 16MB MT4LSDT832UD ­ 32MB MT4LSDT1632UD ­ 64MB MT4LSDT3232UD ­ 128MB For the latest data , · 16MB (4 Meg x 32) , 32MB (8 Meg x 32), 64MB (16 Meg x 32), and 128MB (32 Meg x 32) · Utilizes , ,096-cycle refresh (15.625µs refresh interval); 128MB modules; 64ms, 8,192-cycle refresh (7.81µs , _4C4_8_16_32x32UDG.fm - Rev. A 12/04 EN 16MB 32MB 64MB 128MB 4K 4K 4K 8K 4 (BA0­BA1) 4
Micron Technology
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MT48LC8M16A2P 3CK10 100-P 32UDG
Abstract: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC100-, and PC133-compliant · Fully , Marking Table. *CL = CAS (READ) latency 128Mb: x4, x8, x16 SDRAM 128MSDRAM_E.p65 ­ Rev. E; Pub. 5/01 , MICRON WITHOUT NOTICE. 128Mb: x4, x8, x16 SDRAM FBGA PIN ASSIGNMENT (Top View) 32 Meg x 4 8 x 16mm , Depopulated Balls 128Mb: x4, x8, x16 SDRAM 128MSDRAM_E.p65 ­ Rev. E; Pub. 5/01 2 Micron Technology , , Inc. 128Mb: x4, x8, x16 SDRAM 128Mb SDRAM PART NUMBERS PART NUMBER MT48LC32M4A2TG MT48LC32M4A2FC Micron Technology
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MT48LC32M4A2FC-75 MT48LC32M4A2FC-7E MT48LC32M4A2FB-75 MT48LC32M4A2FB-7E MT48LC16M8A2FC-75 MT48LC16M8A2FC-7E
Abstract: 128Mb: x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM Features: â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â , FC2 Timing Types: PC100 (3-3-3) PC133 (3-3-3) -8A -75A Part number example: The 128Mb , .) PDF: 09005aef807827f6 / Source: 09005aef807825bd 128Mb SDRAM Rev: 11/29/2004 1 www.spectek.com , SpecTek 128Mb: x4, x8, x16 SDRAM 3.3V coincident with the READ or WRITE commands are used to select , is initiated at the end of the burst sequence. The 128Mb SDRAM uses an internal pipelined SpecTek
Original
PC-100 S40032LK8 S80016LK7 S16008LK9 S80016LK7TW-8A

MT46V32M16

Abstract: MT4VDDT1664HY-335 64MB, 128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT4VDDT864H ­ 64MB1 MT4VDDT1664H ­ 128MB MT4VDDT3264H ­ 256MB For component data sheets, refer to Micron's Web site , rates: PC2100, PC2700, or PC3200 · 64MB (8 Meg x 64), 128MB (16 Meg x 64), or 256MB (32 Meg x 64) · VDD , ); 7.8125µs (128MB, 256MB) maximum average periodic refresh interval · Serial presence-detect (SPD) with , discussed herein are subject to change by Micron without notice. 64MB, 128MB, 256MB (x64, SR) 200
Micron Technology
Original
MT46V32M16 MT4VDDT1664HY-335 MT46V16M16 200-P MO-224
Abstract: ADVANCE 128Mb: x16, x32 BAT-RAM SDRAM SYNCHRONOUS DRAM FEATURES · Temperature Compensated , CAS (READ) latency 128Mb: x16, x32, SDRAM BatRamY95W_3V_A.p65 ­ Pub. 9/01 1 Micron Technology , MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS. ADVANCE 128Mb: x16, x32 BAT-RAM SDRAM 90 , DQ11 VDDQ VSSQ VDDQ VSSQ DQ4 R DQ13 DQ15 VSS VDD DQ0 DQ2 Ball and Array 128Mb: x16, x32 , products or specifications without notice. ©2001, Micron Technology, Inc. ADVANCE 128Mb: x16, x32 Micron Technology
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MT48LC8M16LFFC MT48V8M16LFFC MT48LC8M16LFFF MT48V8M16LFFF MT48LC4M32LFFC MT48V4M32LFFC
Abstract: ADVANCEâ'¡ 128Mb: x16, x32 MOBILE SDRAM SYNCHRONOUS DRAM MT48LC8M16LFFF, MT48V8M16LFFF â , '" 20ns 20ns -10 40 MHz 22ns â'" â'" 20ns 20ns *CL = CAS (READ) latency 128Mb , 'S PRODUCTION AND DATA SHEET SPECIFICATIONS. ADVANCE 128Mb: x16, x32 MOBILE SDRAM 90-Ball FBGA PIN , A B C D E F G H J K L M N P R Ball and Array 128Mb: x16, x32 Mobile SDRAM , products or specifications without notice. ©2002, Micron Technology, Inc. ADVANCE 128Mb: x16, x32 Micron Technology
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NC/A12 MT48V4M32LFFC-8 MT48LC4M32LFFC-10 MT48V8M16LFFF-10 MT48LC8M16LFFF-8

MT48LC8M16A2B4

Abstract: MT48LC16M8A2BB Preliminary 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 ­ , tRCD (ns) tRP (ns) CL (ns) 18 20 15 18 20 15 18 20 15 PDF: 09005aef84baf515 128mb , reserved. Preliminary 128Mb: x4, x8, x16 Automotive SDRAM Features Table 2: Address Table , :0] 1K A[9:0] 8 Meg x 16 2 Meg x 16 x 4 banks 4K 4K A[11:0] 4 BA[1:0] 512 A[8:0] Table 3: 128Mb , x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef84baf515 128mb
Micron Technology
Original
MT48LC8M16A2B4
Abstract: DDR 128Mb SDRAM Nanya Technology Corp. Preliminary Not finalized. NT5DS8M16IS NT5DS8M16IS Commercial and Industrial Consumer DDR 128Mb SDRAM Features  Data Integrity with Power , RoHS compliance and Halogen-free 5 128Mb Length x Width (Org. / Package) (mm) Item Organization (mm) 128Mb 8M x 16 Pin pitch Number of banks 8M x 16 22.22 x 10.16 BA0,BA1 , Technology Corporation © All Rights Reserved DDR 128Mb SDRAM NT5DS8M16IS Preliminary Not finalized Nanya Technology
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DDR-333 DDR-400

BFM MARKING

Abstract: MT4LSDT1664AG-133B1 32MB / 64MB / 128MB (x64) 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE Features · PC100- and , (8 Meg x 64), 128MB (16 Meg x 64) · Single +3.3V ±0.3V power supply · Fully synchronous; all signals , Self Refresh Mode · 32,/64MB: 64ms, 4,096-cycle refresh; 128MB: 64ms, 8,192-cycle refresh · , MT4LSDT1664A(I) - 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com , , BA1) 8 Meg x 16 4K (A0-A11) 512 (A0-A8) 1 (S0, S2) 128MB MODULE 8K 4 (BA0, BA1) 16 Meg x 16 8K (A0-A12
Micron Technology
Original
BFM MARKING MT4LSDT1664AG-133B1 MT48LC4M16A2TG-75
Abstract: 64MB, 128MB (x64) 200-PIN DDR SDRAM SODIMM SMALL-OUTLINE DDR SDRAM DIMM Features · JEDEC , ) and 128MB (16 Meg x 64) · VDD= VDDQ= +2.5V · VDDSPD = +2.3V to +3.6V · 2.5V I/O (SSTL_2 compatible) · , (64MB); 7.8125µs (128MB) maximum average periodic refresh interval · Serial Presence Detect (SPD) with , MT4VDDT1664H ­ 128MB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds , lead-free products. 2. CL = Device CAS (READ) Latency. Table 1: Address Table 64MB 128MB 8K 8K Micron Technology
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PC1600

TN-48-09

Abstract: SMD marking B44 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 ­ 8 Meg x 4 x 4 Banks MT48LC16M8A2 ­ 4 , : 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 1 Products and specifications discussed herein are subject to , specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 128Mb: x4, x8, x16 SDRAM Features Table 3: 128Mb SDR Part Numbering Part Numbers MT48LC32M4A2TG MT48LC32M4A2P MT48LC16M8A2TG , Meg x 8 16 Meg x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef8091e66d 128Mb
Micron Technology
Original
TN-48-09 SMD marking B44

micron marking MT48LC8M16A2B4

Abstract: MT48LC16M8A2BB 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 ­ 8 Meg x 4 x 4 Banks MT48LC16M8A2 ­ 4 , ) CL (ns) 18 20 15 18 20 15 18 20 15 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 1 , Technology, Inc. All rights reserved. 128Mb: x4, x8, x16 SDRAM Features Table 2: Address Table , :0] 1K A[9:0] 8 Meg x 16 2 Meg x 16 x 4 banks 4K 4K A[11:0] 4 BA[1:0] 512 A[8:0] Table 3: 128Mb , x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1
Micron Technology
Original
micron marking MT48LC8M16A2B4

MT48LC16M8A2BB

Abstract: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 â'" 8 Meg x 4 x 4 Banks MT48LC16M8A2 , 15 15 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 1 Micron , by Micron without notice. 128Mb: x4, x8, x16 SDRAM Features Table 2: Address Table Parameter , A[8:0] Column addressing Table 3: 128Mb SDR Part Numbering Part Numbers Architecture , Note: 1. FBGA Device Decoder: www.micron.com/decoder PDF: 09005aef8091e66d 128mb
Micron Technology
Original

8M16

Abstract: MT48H4M32 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF ­ 2 , 3 5ns 5.4ns 1. CL = CAS (READ) latency PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev , notice. © 2008 Micron Technology, Inc. All rights reserved. 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Figure 1: 128Mb Mobile LPSDR Part Numbering MT Micron Technology Product Family 48 = , available at www.micron.com/decoder. PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Micron Technology
Original
8M16 MT48H4M32 MT48H4M32LF

MT48H4M32

Abstract: MT48H4M32LF 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF ­ 2 , 5ns -75 104 133 8ns 5.4ns Note: PDF: 09005aef832ff1ea 128mb , . 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Figure 1: 128Mb Mobile LPSDR Part Numbering MT , /decoder. PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 2 Micron Technology , , Inc. All rights reserved. 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Contents General
Micron Technology
Original
4M32 Compound
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